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    Part ECAD Model Manufacturer Description Download Buy
    RJK0243DNS-00#J5 Renesas Electronics Corporation P Channel Power MOSFET Visit Renesas Electronics Corporation

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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0243DNS 25V, 25A, 9.6mΩmax. N Channel Power MOS FET High Speed Power Switching R07DS1074EJ0110 Rev1.10 Mar 28, 2013 Features • • • • • • • Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original     		PDF RJK0243DNS R07DS1074EJ0110 PWSN0008JB-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0243DNS 25V, 25A, 9.6mΩmax. N Channel Power MOS FET High Speed Power Switching R07DS1074EJ0110 Rev1.10 Mar 28, 2013 Features • • • • • • • Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original     		PDF RJK0243DNS R07DS1074EJ0110 PWSN0008JB-A

    RJK03P7DPA

    Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1
    Text: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position


    Original     		PDF 0000-A PAE-AA-12-0177-1 PAE-AA-12-0049-1 RJK03P7DPA NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1