490UMX Search Results
490UMX Datasheets Context Search
Catalog Datasheet |
Type |
Document Tags |
PDF |
---|---|---|---|
9013bContextual Info: 9012B 9012B Silicon PNP Epitaxial Transistor Description :The 9012B is designed for audio frequency general amplifier applications Features: ●Excellent hFE Linearity ●Complementary to 9013B Chip Appearance Chip Size 490umx490um Chip Thickness 210±20um |
Original |
9012B 9012B 9013B 490um 490um 110um 110um 9013b | |
Contextual Info: ED-220IR AlGaAs/AlGaAs IrED Chips 880 nm Features : Typical Applications : • N side up • Industrial Infrared Equipment Outline Dimensions : Unit: um 490 475 n-Electrode n-AlGaAs epi layer 490 n-Electrode 120 255 p-AlGaAs epi layer Emission area p-Electrode |
Original |
ED-220IR 120um 475um 255um 490umx 490um | |
9013BContextual Info: 9013B 9013B Silicon NPN Epitaxial Transistor Description :The 9013B is designed for audio frequency general amplifier applications Features: ●Excellent hFE Linearity ●Complementary to 9012B Chip Appearance Chip Size 490umx490um Chip Thickness 210±20um |
Original |
9013B 9013B 9012B 490um 490um 110um 110um | |
BC807B
Abstract: BC817B
|
Original |
BC807B BC807B BC817B 490um 490um 110um 110um BC817B | |
BC817B
Abstract: BC807B
|
Original |
BC817B BC817B BC807B 490um 490um 110um 110um BC807B |