MR0A16A
Abstract: 64Kx16 SRAM 64Kx16 MR0A16ACYS35 MR0A16AVYS35 MR0A16AYS35
Text: MR0A16A 64Kx16 MRAM Memory Features • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing and Pin-out Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBRAM in System
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MR0A16A
64Kx16
20-years
44-TSOP
48-BGA
MR0A16A
SRAM 64Kx16
MR0A16ACYS35
MR0A16AVYS35
MR0A16AYS35
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tsop 48 PIN type2
Abstract: 48BGA MR0A16AMA35
Text: MR0A16A FEATURES 64K x 16 MRAM Memory • + 3.3 Volt power supply • Fast 35ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Commercial, Industrial, Extended Temperatures • Data always non-volatile for >20-years at temperature
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MR0A16A
20-years
MR0A16A
576-bit
EST354
tsop 48 PIN type2
48BGA
MR0A16AMA35
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0.35mm pitch BGA
Abstract: MR4A08BCYS35R MR4A08B MR4A08BC mr4a08bcys MR4A08BCYS35
Text: MR4A08B FEATURES 2M x 8 MRAM Memory • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP2 packages
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MR4A08B
20-years
AEC-Q100
MR4A08B
216-bit
MR4A08B,
EST356
0.35mm pitch BGA
MR4A08BCYS35R
MR4A08BC
mr4a08bcys
MR4A08BCYS35
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qfn 3x3 tray dimension
Abstract: XCDAISY BFG95 XC5VLX330T-1FF1738I pcb footprint FS48, and FSG48 WS609 jedec so8 Wire bond gap XC3S400AN-4FG400I FFG676 XC4VLX25 cmos 668 fcbga
Text: Device Package User Guide [Guide Subtitle] [optional] UG112 v3.5 November 6, 2009 [optional] R R Xilinx is disclosing this user guide, manual, release note, and/or specification (the "Documentation") to you solely for use in the development of designs to operate with Xilinx hardware devices. You may not reproduce, distribute, republish, download, display, post, or transmit the
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UG112
UG072,
UG075,
XAPP427,
qfn 3x3 tray dimension
XCDAISY
BFG95
XC5VLX330T-1FF1738I
pcb footprint FS48, and FSG48
WS609
jedec so8 Wire bond gap
XC3S400AN-4FG400I
FFG676
XC4VLX25 cmos 668 fcbga
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23265
Abstract: No abstract text available
Text: NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N02L1618C1A Advance Information 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit Overview Features The N02L1618C1A is an integrated memory
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N02L1618C1A
128Kx16
N02L1618C1A
N02L163WN1A,
3265-A
23265
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PSEUDO SRAM
Abstract: CS26LV32163
Text: Low Power Pseudo SRAM 2 M Word x 16 bit CS26LV32163 Revision History Rev. No. History Issue Date 2.0 Initial issue with new naming rule Mar. 01, 2005 2.1 Revise 1. page 2 & 4: page address inputs Nov. 23, 2005 Remark 2. Add Vcc absolute max. in page 5 2.2
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CS26LV32163
48BGA-6
PSEUDO SRAM
CS26LV32163
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N04L1618C2A
Abstract: N04L1618C2AB N04L163WC1A
Text: AMI Semiconductor, Inc. N04L1618C2A ULP Memory Solutions 670 North McCarthy Blvd. Suite 220 Milpitas, CA 95035 PH: 408-935-7777, FAX: 408-935-7770 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit Overview Features The N04L1618C2A is an integrated memory
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N04L1618C2A
256Kx16
N04L1618C2A
N04L163WC1A,
N04L1618C2AB
N04L163WC1A
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DQU12
Abstract: No abstract text available
Text: MR0A16A FEATURES 64K x 16 MRAM Memory • 3.3 Volt power supply • Fast 35ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Commercial, Industrial, and Extended Temperatures
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MR0A16A
44-pinâ
48-ballâ
1-877-347-MRAMâ
EST00354
MR0A16A
080512a
DQU12
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Untitled
Abstract: No abstract text available
Text: MR256D08B Dual Supply 32K x 8 MRAM FEATURES • +3.3 Volt power supply • I/O Voltage range supports wide +1.65 to +3.6 Volt interfaces • Fast 45 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature
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MR256D08B
20-years
MR256D08B
144-bit
EST411
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TEC Driver
Abstract: No abstract text available
Text: DRV590 SLOS365A – AUGUST 2001 – REVISED AUGUST 2002 1.2-A HIGH-EFFICIENCY PWM POWER DRIVER FEATURES D 1.22-A DC 82% Duty Cycle Output Current D D D D D D DESCRIPTION The DRV590 is a high-efficiency power amplifier ideal for driving a wide variety of thermoelectric cooler
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DRV590
SLOS365A
DRV590
TEC Driver
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125OC
Abstract: BGA-48-0608 BS616LV2019 BS616LV2019TC 48-pin TSOP
Text: Very Low Power CMOS SRAM 128K X 16 bit BS616LV2019 Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC operation voltage : 2.4V ~ 3.6V Ÿ Very low power consumption : VCC = 3.0V Operation current : 16mA Max. at 70ns 2mA (Max.) at 1MHz
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BS616LV2019
x8/x16
BS616LV2019
R0201-BS616LV2019A
125OC
BGA-48-0608
BS616LV2019TC
48-pin TSOP
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MX23L6423A
Abstract: MX23L6423ATC-90G
Text: MX23L6423A 64M-BIT PAGE MODE MASK ROM FEATURES • Bit organization - 8M x 8 byte mode - 4M x 16 (word mode) • Fast access time - Random access:90ns (max.) - Page access:25ns (max.) • Page size - 8 words per page • Current - Operating:20mA - Standby:15uA
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MX23L6423A
64M-BIT
MX23L6423ATC-90G
MX23L6423A
MX23L6423ATC-90G
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Untitled
Abstract: No abstract text available
Text: MR4A08B FEATURES 2M x 8 MRAM Memory • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP2 packages
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MR4A08B
20-years
AEC-Q100
MR4A08B
216-bit
EST00356
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Z04B
Abstract: MR27V6441L MARK Z04D MR27V6441L-xxxMP Z04D 48TSOP2 ST03
Text: OKI Semiconductor MR27V6441L PEDR27V6441L-02-03 Issue Date: April 4, 2005 Preliminary 64M x 1–Bit Serial Production Programmed ROM P2ROM GENERAL DESCRIPTION The MR27V6441L is a 64 Mbit Production Programmed Read-Only Memory, which is configured as 67,108,864 word × 1-bit. The MR27V6441L supports a simple read operation using a single 3.3V power supply
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MR27V6441L
PEDR27V6441L-02-03
MR27V6441L
33MHz
20MHz
42SOJ
48BGA
28SOP
Z04B
MARK Z04D
MR27V6441L-xxxMP
Z04D
48TSOP2
ST03
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tray matrix bga
Abstract: N02L6181AB27I
Text: N02L6181A 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit Features Overview • Single Wide Power Supply Range 1.65 to 2.2 Volts The N02L6181A is an integrated memory device containing a 2 Mbit Static Random Access Memory organized as 131,072 words by 16 bits. The device
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N02L6181A
128Kx16
N02L6181A
N02L63W3A,
tray matrix bga
N02L6181AB27I
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MR0D08B
Abstract: No abstract text available
Text: MR0D08B Dual Supply 128K x 8 MRAM FEATURES • +3.3 Volt power supply • I/O Voltage range supports wide +1.65 to +3.6 Volt interfaces • Fast 45 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature
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MR0D08B
20-years
MR0D08B
576-bit
45nspenses,
EST00370
MR0D08B,
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Untitled
Abstract: No abstract text available
Text: MR0A16A FEATURES 64K x 16 MRAM Memory • + 3.3 Volt power supply • Fast 35ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Commercial, Industrial, Extended Temperatures • Data always non-volatile for >20-years at temperature
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MR0A16A
20-years
MR0A16A
576-bit
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BGA OUTLINE DRAWING
Abstract: mr4a16bmys351
Text: MR4A16B FEATURES 1M x 16 MRAM • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP package
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MR4A16B
20-years
AEC-Q100
MR4A16B
216-bit
MR4A16B,
EST352
BGA OUTLINE DRAWING
mr4a16bmys351
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2227V
Abstract: No abstract text available
Text: MR256D08B Dual Supply 32K x 8 MRAM FEATURES • +3.3 Volt power supply • I/O Voltage range supports wide +1.65 to +3.6 Volt interfaces • Fast 45 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature
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MR256D08B
20-years
MR256D08B
144-bit
2227V
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Z04B
Abstract: MARK Z04D
Text: FEDR27T1641L-02-H1 ＯＫＩ Semiconductor MR27T1641L This version : Feb.28, 2005 Previous version: -.- 8M x 1–Bit Serial Production Programmed ROM P2ROM GENERAL DESCRIPTION The MR27T1641L is a 16 Mbit Production Programmed Read-Only Memory, which is configured as
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FEDR27T1641L-02-H1
MR27T1641L
MR27T1641L
30MHz
20MHz
42SOJ
48BGA
28SOP
Z04B
MARK Z04D
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CY7C1061
Abstract: CY7C1061AV33-12ZI
Text: CY7C1061AV33 1M x 16 Static RAM Features WE input LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A19). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through
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CY7C1061AV33
54-pin
60-ball
I/O15)
48BGA
pF/10
48-Ball
CY7C1061
CY7C1061AV33-12ZI
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Untitled
Abstract: No abstract text available
Text: Very Low Power CMOS SRAM 128K X 16 bit BS616LV2019 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC operation voltage : 2.4V ~ 3.6V Ÿ Very low power consumption : VCC = 3.0V Operation current : 25mA Max. at 55ns
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BS616LV2019
x8/x16
BS616LV2019
R0201-BS616LV2019
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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Untitled
Abstract: No abstract text available
Text: Low Power Pseudo SRAM 2 M Word x 16 bit CS26LV32163 Revision History Rev. No. History Issue Date 2.0 Initial issue with new naming rule Mar. 01, 2005 2.1 Revise 1. page 2 & 4: page address inputs Nov. 23, 2005 Remark 2. Add Vcc absolute max. in page 5 2.2
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CS26LV32163
48BGA-6
CS26LV32163
32M-bit
2MS26LV32163
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