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    489AA Search Results

    489AA Result Highlights (2)

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    DC1489A-A Analog Devices LTC3619EDD Demo board - 400mA/ Visit Analog Devices Buy
    DC489A-A Analog Devices LTC5507ES6 - Low to HF Frequen Visit Analog Devices Buy
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    489AA Price and Stock

    Analog Devices Inc DC489A-A

    EVAL BOARD FOR LTC5507ES6
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    DigiKey DC489A-A Box 1 1
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    Mouser Electronics DC489A-A 2
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    Analog Devices Inc DC489A-A 85 1
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    Analog Devices Inc DC1489A-A

    DEMO BOARD FOR LTC3619EDD
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    Analog Devices Inc DC1489A-A 104 1
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    KEMET Corporation CBR05C489AAGAC

    4.80PF 250V
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    KEMET Corporation CBR08C489AAGAC

    CAP CER 4.8PF 250V C0G/NP0 0805
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    KEMET Corporation CBR06C489AAGAC

    CAP CER 4.8PF 250V C0G/NP0 0603
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    489AA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    489AA

    Abstract: No abstract text available
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS 10 PIN FLIP−CHIP CASE 489AA−01 ISSUE A DATE 04 MAY 2004 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. COPLANARITY APPLIES TO SPHERICAL CROWNS OF SOLDER BALLS.


    Original     		PDF 489AA-01 489AA 489AA

    Untitled

    Abstract: No abstract text available
    Text: NLAS4685 Pr oduct Preview Ultra−Low Resistance Dual SPDT Analog Switch The NLAS4685 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring


    Original     		PDF NLAS4685 Microbump-10 489AA NLAS4717 BAT54 NLAS4717 Micro10

    485AG

    Abstract: No abstract text available
    Text: CHAPTER 2 Case Outlines and Package Dimensions http://onsemi.com 421 CASE OUTLINES AND PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE M 1 DATE 07 JUN 2004 SCALE 2:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER.


    Original     		PDF 318G-02 004ON. 485AG

    NLAS4717EPMTR2G

    Abstract: NLAS4717EP MAX4717 NLAS4717EPFCT1G
    Text: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original     		PDF NLAS4717EP NLAS4717EP WQFN-10: WQFN-10 488AQ NLAS4717EP/D NLAS4717EPMTR2G MAX4717 NLAS4717EPFCT1G

    power tmos

    Abstract: 936G PR 751S K1 MARK 6PIN SOT-363 carrier chiller mc10116 MC10H210 mmsf5n03hd 0j sod-523 CASERM
    Text: Semiconductor Packaging and Case Outlines Reference Manual CASERM/D Rev. 1, Aug−2003  SCILLC, 2003 Previous Edition  2000 “All Rights Reserved’’ CASERM ChipFET is a trademark of Vishay Siliconix. POWERMITE is a registered trademark of and used under a license from Microsemi Corporation.


    Original     		PDF Aug-2003 power tmos 936G PR 751S K1 MARK 6PIN SOT-363 carrier chiller mc10116 MC10H210 mmsf5n03hd 0j sod-523 CASERM

    555C

    Abstract: MAX4685 NLAS4685 T-014 489AA
    Text: NLAS4685 Ultra−Low Resistance Dual SPDT Analog Switch The NLAS4685 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.8 W, for the Normally Closed (NC) switch and


    Original     		PDF NLAS4685 NLAS4685 NLAS4685/D 555C MAX4685 T-014 489AA

    Untitled

    Abstract: No abstract text available
    Text: NLAS4684 Ultra−Low Resistance Dual SPDT Analog Switch The NLAS4684 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.5 W, for the Normally Closed (NC) switch, and


    Original     		PDF NLAS4684 Microbump-10 489AA NLAS4684/D

    Untitled

    Abstract: No abstract text available
    Text: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V.


    Original     		PDF NLAS4717 Micro10: NLAS4717/D

    Untitled

    Abstract: No abstract text available
    Text: NLAS4684 Ultra−Low Resistance Dual SPDT Analog Switch The NLAS4684 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.5 W, for the Normally Closed (NC) switch, and


    Original     		PDF NLAS4684 NLAS4684/D

    555C

    Abstract: MAX4685 NLAS4685 NLAS4685FCT1 NLAS4685FCT1G
    Text: NLAS4685 Ultra−Low Resistance Dual SPDT Analog Switch The NLAS4685 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.8 W, for the Normally Closed (NC) switch and


    Original     		PDF NLAS4685 NLAS4685 NLAS4685/D 555C MAX4685 NLAS4685FCT1 NLAS4685FCT1G

    MAX4717

    Abstract: NLAS4717 NLAS4717FCT1 NLAS4717FCT1G NLAS4717MR2 NLAS4717MR2G
    Text: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub-micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V.


    Original     		PDF NLAS4717 NLAS4717 Micro10: Flip-Chip-10: NLAS4717/D MAX4717 NLAS4717FCT1 NLAS4717FCT1G NLAS4717MR2 NLAS4717MR2G

    MAX4717

    Abstract: NLAS4717EP NLAS4717EPFCT1G 489AA
    Text: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original     		PDF NLAS4717EP NLAS4717EP Micro10: NLAS4717EP/D MAX4717 NLAS4717EPFCT1G 489AA

    NLAS4684MR2G

    Abstract: 555C DFN10 MAX4684 NLAS4684 NLAS4684MR2
    Text: NLAS4684 Ultra-Low Resistance Dual SPDT Analog Switch The NLAS4684 is an advanced CMOS analog switch fabricated in Sub-micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra-Low RON of 0.5 W, for the Normally Closed (NC) switch, and


    Original     		PDF NLAS4684 NLAS4684 NLAS4684/D NLAS4684MR2G 555C DFN10 MAX4684 NLAS4684MR2

    Untitled

    Abstract: No abstract text available
    Text: NLAS4684 Ultra−Low Resistance Dual SPDT Analog Switch The NLAS4684 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.5 W, for the Normally Closed (NC) switch, and


    Original     		PDF NLAS4684 Microbump-10 489AA NLAS4684/D

    Untitled

    Abstract: No abstract text available
    Text: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V.


    Original     		PDF NLAS4717 Micro10: NLAS4717/D

    Untitled

    Abstract: No abstract text available
    Text: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original     		PDF NLAS4717EP Micro10: 4717EP 4717E Micro10 NLAS4717EP/D Microbump-10

    MAX4717

    Abstract: NLAS4717EP NLAS4717EPFCT1G NLAS4717EPMTR2G 4717EP
    Text: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original     		PDF NLAS4717EP NLAS4717EP WQFN-10: Microbump-10 489AA 65not NLAS4717EP/D MAX4717 NLAS4717EPFCT1G NLAS4717EPMTR2G 4717EP

    A1468-4

    Abstract: No abstract text available
    Text: NLAS4684 Ultra−Low Resistance Dual SPDT Analog Switch The NLAS4684 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.5 W, for the Normally Closed (NC) switch, and


    Original     		PDF NLAS4684 Microbump-10 489AA NLAS4684 NLAS4684FCT1 NLAS4684FCT1G NLAS4684MNR2 NLAS4684MNR2G A1468-4

    4717EP

    Abstract: MAX4717 NLAS4717EP NLAS4717EPFCT1G NLAS4717EPMTR2G
    Text: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub-micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original     		PDF NLAS4717EP NLAS4717EP WQFN-10: 4717EP NLAS4717EP/D 4717EP MAX4717 NLAS4717EPFCT1G NLAS4717EPMTR2G

    555C

    Abstract: MAX4684 NLAS4684 NLAS4684FCT1 NLAS4684FCT1G 4684
    Text: NLAS4684 Ultra−Low Resistance Dual SPDT Analog Switch The NLAS4684 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.5 W, for the Normally Closed (NC) switch, and


    Original     		PDF NLAS4684 NLAS4684 Microbump-10 489AA NLAS4684/D 555C MAX4684 NLAS4684FCT1 NLAS4684FCT1G 4684

    Untitled

    Abstract: No abstract text available
    Text: NLAS4684 Ultra−Low Resistance Dual SPDT Analog Switch The NLAS4684 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.5 W, for the Normally Closed (NC) switch, and


    Original     		PDF NLAS4684 Microbump-10 489AA NLAS4684/D

    Untitled

    Abstract: No abstract text available
    Text: NLAS4684 Ultra−Low Resistance Dual SPDT Analog Switch The NLAS4684 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.5 W, for the Normally Closed (NC) switch, and


    Original     		PDF NLAS4684 Microbump-10 489AA NLAS4684/D

    Untitled

    Abstract: No abstract text available
    Text: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V.


    Original     		PDF NLAS4717 Micro-10: NLAS4717/D

    Untitled

    Abstract: No abstract text available
    Text: NLAS4684 Ultra−Low Resistance Dual SPDT Analog Switch The NLAS4684 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.5 W, for the Normally Closed (NC) switch, and


    Original     		PDF NLAS4684 NLAS4684/D