WQFN10
Abstract: 488AQ
Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WQFN10, 1.4x1.8, 0.4P CASE 488AQ-01 ISSUE C DATE 19 JUN 2007 1 SCALE 5:1 D ÉÉ ÉÉ ÉÉ PIN 1 REFERENCE 2X 2X 0.15 C M1 E DETAIL A Bottom View Optional 0.15 C B EXPOSED Cu A 0.10 C 0.08 C A1 A1 A3 3 9X NOTES:
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WQFN10,
488AQ-01
488AQ
WQFN10
488AQ
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NLAS4717EPMTR2G
Abstract: NLAS4717EP MAX4717 NLAS4717EPFCT1G
Text: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.
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NLAS4717EP
NLAS4717EP
WQFN-10:
WQFN-10
488AQ
NLAS4717EP/D
NLAS4717EPMTR2G
MAX4717
NLAS4717EPFCT1G
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NLAS5223
Abstract: NLAS5223L NLAS5223LMNR2G NLAS5223MNR2G WQFN10
Text: NLAS5223, NLAS5223L Ultra-Low 0.5 W Dual SPDT Analog Switch The NLAS5223 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.5 W, at VCC = 3.0 $ 0.3 V.
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NLAS5223,
NLAS5223L
NLAS5223
NLAS5223L
NLAS5223/D
NLAS5223LMNR2G
NLAS5223MNR2G
WQFN10
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NLAS5223B
Abstract: NLAS5223BL NLAS5223BLMNR2G NLAS5223BMNR2G WQFN10 WQFN-10
Text: NLAS5223B, NLAS5223BL Ultra−Low 0.5 W Dual SPDT Analog Switch The NLAS5223B is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.5 W, at VCC = 3.0 V.
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NLAS5223B,
NLAS5223BL
NLAS5223B
NLAS5223BL
NLAS5223B/D
NLAS5223BLMNR2G
NLAS5223BMNR2G
WQFN10
WQFN-10
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Untitled
Abstract: No abstract text available
Text: NLAS7222A High-Speed USB 2.0 480 Mbps DPDT Switch ON Semiconductor’s NLAS7222A series of analog switch circuits are produced using the company’s advanced sub−micron CMOS technology, achieving industry−leading performance. The NLAS7222A is a 2− to 1−port analog switch. Its wide
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NLAS7222A
NLAS7222A/D
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UQFN-10
Abstract: No abstract text available
Text: NLAS5223B, NLAS5223BL Ultra-Low 0.35 W Dual SPDT Analog Switch The NLAS5223B is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.35 W, at VCC = 4.3 V.
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NLAS5223B,
NLAS5223BL
NLAS5223B
WQFN10
488AQ
UQFN10
488AT
NLAS5228B/D
UQFN-10
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Untitled
Abstract: No abstract text available
Text: NS5A4684S Ultra-Low Resistance Dual SPDT Analog Switch The NS5A4684S is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.6 W.
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NS5A4684S
NS5A4684S
NS5A4684S/D
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Untitled
Abstract: No abstract text available
Text: NS5A4684S Ultra-Low Resistance Dual SPDT Analog Switch The NS5A4684S is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.6 W.
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NS5A4684S
WQFN10
488AQ
NS5A4684S/D
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405C
Abstract: NLAS7222A NLAS7222AMTR2G WQFN10
Text: NLAS7222A 3.3 V, Wide Bandwidth, 2− to −1−Port DPDT Switch with Enable ON Semiconductor’s NLAS7222A series of analog switch circuits are produced using the company’s advanced sub−micron CMOS technology, achieving industry−leading performance.
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NLAS7222A
NLAS7222A
NLAS7222A/D
405C
NLAS7222AMTR2G
WQFN10
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NLAS5223
Abstract: NLAS5223L NLAS5223LMNR2G NLAS5223MNR2G WQFN10
Text: NLAS5223, NLAS5223L Ultra−Low 0.5 W Dual SPDT Analog Switch The NLAS5223 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.5 W, at VCC = 3.0 $ 0.3 V.
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NLAS5223,
NLAS5223L
NLAS5223
NLAS5223L
NLAS5223/D
NLAS5223LMNR2G
NLAS5223MNR2G
WQFN10
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UQFN-10
Abstract: UQFN-10 A3 UQFN-10 1.4 x 1.8 mm
Text: NLAS5223B, NLAS5223BL Ultra−Low 0.5 W Dual SPDT Analog Switch The NLAS5223B is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.5 W, at VCC = 3.0 V.
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NLAS5223B,
NLAS5223BL
NLAS5223B
WQFN-10
488AQ
UQFN-10
488AT
NLAS5223B/D
UQFN-10 A3
UQFN-10 1.4 x 1.8 mm
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Untitled
Abstract: No abstract text available
Text: NLAS7222A High-Speed USB 2.0 480 Mbps DPDT Switch ON Semiconductor’s NLAS7222A series of analog switch circuits are produced using the company’s advanced sub−micron CMOS technology, achieving industry−leading performance. The NLAS7222A is a 2− to 1−port analog switch. Its wide
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NLAS7222A
NLAS7222A
NLAS7222A/D
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MAX4717
Abstract: NLAS4717EP NLAS4717EPFCT1G NLAS4717EPMTR2G 4717EP
Text: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.
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NLAS4717EP
NLAS4717EP
WQFN-10:
Microbump-10
489AA
65not
NLAS4717EP/D
MAX4717
NLAS4717EPFCT1G
NLAS4717EPMTR2G
4717EP
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UQFN-10
Abstract: NLAS5223B NLAS5223BL NLAS5223BLMNR2G NLAS5223BMNR2G NLAS5223BMUR2G UQFN10 WQFN10
Text: NLAS5223B, NLAS5223BL Ultra-Low 0.35 W Dual SPDT Analog Switch The NLAS5223B is an advanced CMOS analog switch fabricated in Sub-micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra-Low RON of 0.35 W, at VCC = 4.3 V.
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NLAS5223B,
NLAS5223BL
NLAS5223B
NLAS5223BL
NLAS5223B/D
UQFN-10
NLAS5223BLMNR2G
NLAS5223BMNR2G
NLAS5223BMUR2G
UQFN10
WQFN10
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405C
Abstract: NLAS7222A NLAS7222AMTR2G NLAS7222AMUR2G
Text: NLAS7222A High−Speed USB 2.0 480 Mbps DPDT Switch ON Semiconductor’s NLAS7222A series of analog switch circuits are produced using the company’s advanced sub−micron CMOS technology, achieving industry−leading performance. The NLAS7222A is a 2− to 1−port analog switch. Its wide
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NLAS7222A
NLAS7222A
NLAS7222A/D
405C
NLAS7222AMTR2G
NLAS7222AMUR2G
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NLAS7222A
Abstract: NLAS7222AMTR2G UQFN10 WQFN10 HSD17 UQFN-10
Text: NLAS7222A High-Speed USB 2.0 480 Mbps DPDT Switch ON Semiconductor's NLAS7222A series of analog switch circuits are produced using the company's advanced sub-micron CMOS technology, achieving industry-leading performance. The NLAS7222A is a 2- to 1-port analog switch. Its wide
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NLAS7222A
NLAS7222A
NLAS7222A/D
NLAS7222AMTR2G
UQFN10
WQFN10
HSD17
UQFN-10
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Untitled
Abstract: No abstract text available
Text: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.
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NLAS4717EP
NLAS4717EP
4717EP
489AA
NLAS4717EP/D
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4717EP
Abstract: No abstract text available
Text: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.
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NLAS4717EP
WQFN-10:
4717EP
Microbump-10
489AA
NLAS4717EP/D
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NLAS5223B
Abstract: NLAS5223BL NLAS5223BLMNR2G NLAS5223BMNR2G NLAS5223BMUR2G WQFN10 UQFN-10 UQFN-10 A3 UQFN-10 1.4 x 1.8 mm UQFN10
Text: NLAS5223B, NLAS5223BL Ultra−Low 0.5 W Dual SPDT Analog Switch The NLAS5223B is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.5 W, at VCC = 3.0 V.
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NLAS5223B,
NLAS5223BL
NLAS5223B
WQFN-10
488AQ
NLAS5223BMNR2G
NLAS5223BLMNR2G
NLAS5223BMUR2G
NLAS5223B/D
NLAS5223BL
NLAS5223BLMNR2G
NLAS5223BMNR2G
NLAS5223BMUR2G
WQFN10
UQFN-10
UQFN-10 A3
UQFN-10 1.4 x 1.8 mm
UQFN10
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405C
Abstract: NLAS7222A NLAS7222AMTR2G NLAS7222AMUR2G
Text: NLAS7222A High−Speed USB 2.0 480 Mbps DPDT Switch ON Semiconductor’s NLAS7222A series of analog switch circuits are produced using the company’s advanced sub−micron CMOS technology, achieving industry−leading performance. The NLAS7222A is a 2− to 1−port analog switch. Its wide
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NLAS7222A
NLAS7222A
NLAS7222A/D
405C
NLAS7222AMTR2G
NLAS7222AMUR2G
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Untitled
Abstract: No abstract text available
Text: SLAS5223 Ultra-Low 0.5 W Dual SPDT Analog Switch The SLAS5223 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.5 W, at VCC = 3.0 $ 0.3 V.
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SLAS5223
SLAS5223
SLAS5223/D
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488AT-01
Abstract: UQFN-10
Text: NLAS5223B, NLAS5223BL Ultra-Low 0.5 W Dual SPDT Analog Switch The NLAS5223B is an advanced CMOS analog switch fabricated in Sub-micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra-Low RON of 0.5 W, at VCC = 3.0 V.
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NLAS5223B,
NLAS5223BL
NLAS5223B
WQFN10
488AQ
UQFN10
488AT
NLAS5223B/D
488AT-01
UQFN-10
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UQFN-10 A3
Abstract: NLAS7222
Text: NLAS7222B, NLAS7222C High-Speed USB 2.0 480 Mbps DPDT Switches ON Semiconductor's NLAS7222B and NLAS7222C are part of a series of analog switch circuits that are produced using the company's advanced sub-micron CMOS technology, achieving industry-leading
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NLAS7222B,
NLAS7222C
NLAS7222B
NLAS7222B/D
UQFN-10 A3
NLAS7222
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Untitled
Abstract: No abstract text available
Text: NLAS5223B, NLAS5223BL Ultra-Low 0.35 W Dual SPDT Analog Switch The NLAS5223B is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.35 W, at VCC = 4.3 V.
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NLAS5223B,
NLAS5223BL
NLAS5223B
WQFN10
488AQ
NLAS5223BMNR2G
NLAS5223BLMNR2G
NLAS5223BMUR2G
NLAS5228B/D
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