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    4800 N-CHANNEL MOSFET Search Results

    4800 N-CHANNEL MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    4800 N-CHANNEL MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NTTFS4800N

    Abstract: NTTFS4800NTAG NTTFS4800NTWG
    Text: NTTFS4800N Power MOSFET 30 V, 32 A, Single N−Channel, m8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original     		PDF NTTFS4800N NTTFS4800N/D NTTFS4800N NTTFS4800NTAG NTTFS4800NTWG

    Untitled

    Abstract: No abstract text available
    Text: NTTFS4800N Power MOSFET 30 V, 32 A, Single N−Channel, m8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original     		PDF NTTFS4800N NTTFS4800N/D

    NTTFS4800N

    Abstract: NTTFS4800NTAG NTTFS4800NTWG
    Text: NTTFS4800N Power MOSFET 30 V, 32 A, Single N−Channel, m8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original     		PDF NTTFS4800N NTTFS4800N/D NTTFS4800N NTTFS4800NTAG NTTFS4800NTWG

    Untitled

    Abstract: No abstract text available
    Text: DIGITAL AUDIO MOSFET IRF6641TRPbF Key Parameters Features • Latest MOSFET silicon technology • Key parameters optimized for Class-D audio amplifier applications • Low RDS on for improved efficiency • Low Qg for better THD and improved efficiency • Low Qrr for better THD and lower EMI


    Original     		PDF IRF6641TRPbF

    SJ 76 A DIODE EMI

    Abstract: No abstract text available
    Text: DIGITAL AUDIO MOSFET IRF6643TRPbF Key Parameters Features • Latest MOSFET silicon technology • Key parameters optimized for Class-D audio amplifier applications • Low RDS on for improved efficiency • Low Qg for better THD and improved efficiency • Low Qrr for better THD and lower EMI


    Original     		PDF IRF6643TRPbF SJ 76 A DIODE EMI

    Untitled

    Abstract: No abstract text available
    Text: S D ARF1500 S D ARF1500 BeO RF POWER MOSFET 135-05 G S S G S N - CHANNEL ENHANCEMENT MODE 125V 900W 40MHz The ARF1500 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.


    Original     		PDF ARF1500 40MHz ARF1500

    Untitled

    Abstract: No abstract text available
    Text: DIGITAL AUDIO MOSFET IRF6641TRPbF Key Parameters Features • Latest MOSFET silicon technology  Key parameters optimized for Class-D audio amplifier applications  Low RDS on for improved efficiency  Low Qg for better THD and improved efficiency


    Original     		PDF IRF6641TRPbF

    AMPLIFIER 1500w

    Abstract: No abstract text available
    Text: S D ARF1500 S D ARF1500 BeO RF POWER MOSFET 135-05 G S S N - CHANNEL ENHANCEMENT MODE G S 125V 900W 40MHz The ARF1500 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.


    Original     		PDF ARF1500 40MHz ARF1500 AMPLIFIER 1500w

    840S2

    Abstract: P-DSO-20-12
    Text: Preliminary Data PROFET BTS 840S2 Smart High-Side Power Switch Two Channels: 2 x 30mΩ Current Sense Product Summary Vbb on Active channels: On-state Resistance RON Load Current (ISO) IL(ISO) Current Limitation IL(SCr) Package Operating Voltage one 30mΩ


    Original     		PDF 840S2 P-DSO-20-12 840S2 P-DSO-20-12

    CMOS Process Family

    Abstract: 0.6 um cmos process
    Text: 3 Micron CMOS Process Family Features Process parameters 3µm • LOVMOS Process [3Volts 2.7~3.6 Low Voltage Option] Units • Double Poly / Double Metal 10 & 5 & 3volts • 6 µm Poly Pitch; 7 µm Metal Pitch Metal I pitch (line/space) 3/4 µm • 7 Volts Maximum Operating Voltage


    Original     		PDF

    P-MOSFET

    Abstract: mosfet 4800 micron resistor 0.6 um cmos process 3-Micron-CMOS-Process 4800 mosfet MOSFET dynamic parameters 1.2 Micron CMOS Process Family
    Text: 3 Micron CMOS Process Family  June 1995 Process Parameters Features • Double Poly / Double Metal • 6 µm Poly Pitch; 7 µm Metal Pitch • 7 Volts Maximum Operating Voltage • 2.7~3.6 Volts Low Voltage Option • 10 Volts High Voltage Option • Low TCR Resistor Module


    Original     		PDF

    siemens functional description profet

    Abstract: P-DSO-20-12
    Text: PROFET BTS 840 S2 Smart High-Side Power Switch Two Channels: 2 x 30mΩ Current Sense Product Summary Vbb on Active channels: On-state Resistance RON Load Current (ISO) IL(ISO) Current Limitation IL(SCr) Package Operating Voltage one 30mΩ 12A 24A 5.0.34V


    Original     		PDF P-DSO-20-12 systems23) 1999-Nov-18 siemens functional description profet P-DSO-20-12

    0.6 um cmos process

    Abstract: CMOS Process Family micron resistor TCR 1.2 Micron CMOS Process Family
    Text: 3 Micron CMOS Process Family  February 1996 Features • • • • • • Process Parameters LOVMOS Process 2.7~3.6 Volts Low Voltage Option Double Poly / Double Metal 6 µm Poly Pitch; 7 µm Metal Pitch 7 Volts Maximum Operating Voltage 10 Volts High Voltage Option


    Original     		PDF fam10-04 0.6 um cmos process CMOS Process Family micron resistor TCR 1.2 Micron CMOS Process Family

    4800 BB

    Abstract: P-DSO-20-12 BTS840S2 Q67060S701 hl24l
    Text: PROFET BTS 840 S2 Smart High-Side Power Switch Two Channels: 2 x 30mΩ Current Sense Product Summary Vbb on Active channels: On-state Resistance RON Load Current (ISO) IL(ISO) Current Limitation IL(SCr) Package Operating Voltage one 30mΩ 12A 24A 5.0.34V


    Original     		PDF P-DSO-20-12 2003-Oct-01 4800 BB P-DSO-20-12 BTS840S2 Q67060S701 hl24l

    BTS 740 s2

    Abstract: BTS 740 S5 BTS 740 profet Q67060-S7012 Q67060-S7012-A2
    Text: PROFET BTS 740 S2 Smart High-Side Power Switch Two Channels: 2 x 30mΩ Current Sense Product Summary Vbb on Active channels On-state Resistance RON Nominal load current IL(NOM) Current limitation IL(SCr) Package Operating Voltage one 30mΩ 5.5A 24A 5.0.34V


    Original     		PDF P-DSO-20-9 2003-Oct-01 BTS 740 s2 BTS 740 S5 BTS 740 profet Q67060-S7012 Q67060-S7012-A2

    740S2

    Abstract: BTS 740 L2
    Text: PROFET BTS 740S2 Smart High-Side Power Switch Two Channels: 2 x 30mΩ Current Sense Product Summary Vbb on Active channels On-state Resistance RON Nominal load current IL(NOM) Current limitation IL(SCr) Package Operating Voltage one 30mΩ 5.5A 24A 5.0.34V


    Original     		PDF 740S2 P-DSO-20-9 740S2 BTS 740 L2

    IRF7665S2

    Abstract: IRF7665S2TR1PBF AN1035 IRF7665S2TR
    Text: DIGITAL AUDIO MOSFET PD - 96239 IRF7665S2TRPbF IRF7665S2TR1PbF Key Parameters 100 Features • Key parameters optimized for Class-D audio amplifier applications • Low RDS on for improved efficiency • Low Qg for better THD and improved efficiency • Low Qrr for better THD and lower EMI


    Original     		PDF IRF7665S2TRPbF IRF7665S2TR1PbF AN1035 IRF7665S2 IRF7665S2TR1PBF IRF7665S2TR

    Untitled

    Abstract: No abstract text available
    Text: PD - 96239 DIGITAL AUDIO MOSFET IRF7665S2TRPbF IRF7665S2TR1PbF Key Parameters 100 Features • Key parameters optimized for Class-D audio amplifier applications • Low RDS on for improved efficiency • Low Qg for better THD and improved efficiency • Low Qrr for better THD and lower EMI


    Original     		PDF IRF7665S2TRPbF IRF7665S2TR1PbF AN1035

    ARF1500

    Abstract: AMPLIFIER 1500w MAX3920 "27 mhz" amp 700B
    Text: S D S S D S ARF1500 D ARF1500 BeO RF POWER MOSFET 1525-xx G S N - CHANNEL ENHANCEMENT MODE S G S S G S 125V 750W 40MHz The ARF1500 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.


    Original     		PDF ARF1500 1525-xx 40MHz ARF1500 50-450pF AMPLIFIER 1500w MAX3920 "27 mhz" amp 700B

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MODULE SF150AA50 UL;E76102 M SF1 5 0 A A 5 0 is an isolated MOSFET module designed for fast switching applications of low voltage/high current. S F 1 5 0 A A 5 0 enable you to control high power with compact p a c k a g e .^ ^ 150A, VDSS= 500V Compact Package


    OCR Scan     		PDF SF150AA50 E76102 112M3 Q00B24B

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data PROFET BTS 840S2 Smart High-Side Power Switch Two Channels: 2 x 3 0 mo Current Sense Product Summary Operating Voltage Package Vbb on Active channels: one On-state Resistance Ron Load Current (ISO) Current Limitation 5.0. ,34V two parallel


    OCR Scan     		PDF 840S2 30mi2 15mi2

    Untitled

    Abstract: No abstract text available
    Text: PROFET BTS 740S2 Smart High-Side Power Switch Two Channels: 2 x 30mo Current Sense Product Summary Operating Voltage Vbb on Active channels one 30mi2 On-state Resistance R on 5.5A Nominal load current Il(NOM) Current limitation 24A IL(SCr) Package 5.0. ,34V


    OCR Scan     		PDF 740S2 30mi2 15mi2 70jim,

    2sj403

    Abstract: 2sk2532 2SJ406 2SJ28 mosfet 4800 2sk2680 2SK2161 2SK1427 2SK1428 2SK1430
    Text: Large-signal Power M0SFETs 3 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and


    OCR Scan     		PDF chan12/0 2SK2010 2SK2011 2SK2012 2SK2108 2SK2058 2SK2058 O-220 T0-220ML H707b 2sj403 2sk2532 2SJ406 2SJ28 mosfet 4800 2sk2680 2SK2161 2SK1427 2SK1428 2SK1430

    2sk1885

    Abstract: 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26
    Text: SAfiYO POWER MOS FETs 1 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and


    OCR Scan     		PDF 2SJ272 2SJ273 T0-220ML 2SJ274 2SK1904 2SK1905 60m/80m 2SK1906 2SJ275 2SJ276 2sk1885 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26