48 56NG Search Results

48 56NG Result Highlights (4)

Part	ECAD Model	Manufacturer	Description	Download	Buy
1812SMS-56NGLC		Coilcraft Inc	General Purpose Inductor, 0.056uH, 2%, 1 Element, Air-Core, SMD, 1925, ROHS COMPLIANT
1812SMS-56NGLB		Coilcraft Inc	General Purpose Inductor, 0.056uH, 2%, 1 Element, Air-Core, SMD, 1925, ROHS COMPLIANT
1812SMS-56NGL		Coilcraft Inc	RF inductor, air core, 2% tol, SMT, RoHS
UC3856NG4		Texas Instruments	Improved Current Mode PWM Controller 16-PDIP 0 to 70

48 56NG Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
56NG mosfet Abstract: 48 56NG 56NG 4856N 4856ng 369D Text: NTD4856N Power MOSFET 25 V, 89 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices	Original	PDF	NTD4856N NTD4856N/D 56NG mosfet 48 56NG 56NG 4856N 4856ng 369D
LMC 84 Abstract: 1n5j 20NG 095 K3639 1n0j 100 042 LMC 40R12 3N9G 10NG 20NG Text: CERAMIC CHIP INDUCTORS •FEATURES ABCO chip inductor is wire wound type ceramic Inductor. And our product provide high Q value. So ABCO chip inductor can be SRF self resonant frequency industry. This can often eliminate the need for variable components in tunner circuits	Original	PDF	Agilent4287A) 6197A HP8753D) HP4287A) LMC 84 1n5j 20NG 095 K3639 1n0j 100 042 LMC 40R12 3N9G 10NG 20NG
56NG mosfet Abstract: 4856ng NTD4856N-1G 369D 4856N NTD4856NT4G Text: NTD4856N Power MOSFET 25 V, 89 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com	Original	PDF	NTD4856N NTD4856N/D 56NG mosfet 4856ng NTD4856N-1G 369D 4856N NTD4856NT4G
4856ng Abstract: NTD4856NT4G Text: NTD4856N, NVD4856N Power MOSFET 25 V, 89 A, Single N−Channel, DPAK/IPAK Features • • • • • • Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses	Original	PDF	NTD4856N, NVD4856N AEC-Q101 NTD4856N/D 4856ng NTD4856NT4G
56NG mosfet Abstract: No abstract text available Text: NTD4856N, NVD4856N Power MOSFET 25 V, 89 A, Single N−Channel, DPAK/IPAK Features • • • • • • Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses	Original	PDF	NTD4856N, NVD4856N NTD4856N/D 56NG mosfet
Untitled Abstract: No abstract text available Text: NTD4856N, NVD4856N Power MOSFET 25 V, 89 A, Single N−Channel, DPAK/IPAK Features • • • • • • Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses	Original	PDF	NTD4856N, NVD4856N NTD4856N/D
HK212539NJ Abstract: No abstract text available Text: 高周波積層チップインダクタ MULTILAYER CHIP INDUCTOR FOR HIGH FREQUENCY HK SERIES 0603D｜55V125C 1005D｜55V125C＊ OPERATING TEMP. ｜55V85C＊ 1608D｜40V85C ＊保証定格により変わります。＊Operating temperature depends on rated current.	Original	PDF	0603D55V125C 1005D55V125C 55V85C 1608D40V85C 2125D40V85C 100MHz. 0603f0201g 1005f0402g 1608e HK212539NJ
Untitled Abstract: No abstract text available Text: 高周波積層チップインダクタ MULTILAYER CHIP INDUCTOR FOR HIGH FREQUENCY HK SERIES 0603D｜55V125C 1005D｜55V125C＊ OPERATING TEMP. ｜55V85C＊ 1608D｜40V85C ＊保証定格により変わります。＊Operating temperature depends on rated current.	Original	PDF	0603Dï 55V125C 1005Dï 55V125Cï 55V85Cï 1608Dï 40V85C 2125Dï BK2125f0805g
18M5L Abstract: 3N3S 30E K03 Text: 高周波積層チップインダクタ MULTILAYER CHIP INDUCTOR FOR HIGH FREQUENCY HK SERIES 0603D｜55V125C 1005D｜55V125C＊ OPERATING TEMP. ｜55V85C＊ 1608D｜40V85C ＊保証定格により変わります。＊Operating temperature depends on rated current.	Original	PDF	0603D55V125C 1005D55V125C 55V85C 1608D40V85C 2125D40V85C 100MHz. 0603f0201g 1005f0402g 1608e 18M5L 3N3S 30E K03