AN-CoolMOS-01
Abstract: AN-CoolMOS-04 SPW17N80C2 irfp450 mosfet full bridge transistor SMD v1 MOSFET siemens semiconductor 1988 led smps* ZVT 47n60s5 to247 SPN04N60C2 SPN01N60S5
Text: Version 1.1 , June 2000 Application Note AN-CoolMOS-07 CoolMOS - Frequently Asked Questions Author: Ilia Zverev Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g CoolMOS - Frequently Asked Questions
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AN-CoolMOS-07
Room14J1
Room1101
AN-CoolMOS-01
AN-CoolMOS-04
SPW17N80C2
irfp450 mosfet full bridge
transistor SMD v1 MOSFET
siemens semiconductor 1988 led
smps* ZVT
47n60s5 to247
SPN04N60C2
SPN01N60S5
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47N60
Abstract: 47N60S5 SPW47N60S5 P-TO247
Text: 47N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 VDS 600 V RDS(on) 0.07 Ω ID 47 A • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated
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SPW47N60S5
P-TO247
Q67040-S4240
47N60S5
47N60
47N60S5
SPW47N60S5
P-TO247
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47N60S5
Abstract: SPW47N60S5
Text: 47N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 VDS 600 V RDS(on) 0.07 Ω ID 47 A • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated
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SPW47N60S5
P-TO247
Q67040-S4240
47N60S5
47N60S5
SPW47N60S5
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47N60S5
Abstract: 47n60s5 to247 SPW47N60S5 47N60 P-TO247 47n60s
Text: 47N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO 247 • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated
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SPW47N60S5
P-TO247
SPWx0N60S5
Q67040-S4240
47N60S5
47N60S5
47n60s5 to247
SPW47N60S5
47N60
P-TO247
47n60s
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47N60S5
Abstract: 47N60 F47A DT 94 SPW47N60S5 47n60s5 to247
Text: 47N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Worldwide best RDS on in TO 247 · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity
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SPW47N60S5
SPWx0N60S5
P-TO247
47N60S5
Q67040-S4240
SPW47N60S5
47N60S5
47N60
F47A
DT 94
47n60s5 to247
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47n60s5
Abstract: SPW47N60S5 47n60 SPW47N60 47n60s
Text: 47N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO 247 • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS(on) 0.07 Ω • Extreme dv/dt rated
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SPW47N60S5
P-TO247
Q67040-S4240
47N60S5
47n60s5
SPW47N60S5
47n60
SPW47N60
47n60s
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irfp460 dc welding circuit diagram
Abstract: irfp450 mosfet full bridge ZVT Full bridge transformer IGBT IGBT ZVT Full bridge lossless passive clamp flyback converter ZVT full bridge for welding irfp450 mosfet full bridge pwm 47N60S5 AN-CoolMOS-02 siemens rectifier pwm igbt
Text: Version 1.1 , June 2000 Application Note AN-CoolMOS-02 CoolMOS Selection Guide Author: Ilia Zverev, Jon Hancock Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g CoolMOS Selection Guide This selection guide shows the main application fields of CoolMOS transistors, answers
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AN-CoolMOS-02
Room14J1
Room1101
irfp460 dc welding circuit diagram
irfp450 mosfet full bridge
ZVT Full bridge transformer IGBT
IGBT ZVT Full bridge
lossless passive clamp flyback converter
ZVT full bridge for welding
irfp450 mosfet full bridge pwm
47N60S5
AN-CoolMOS-02
siemens rectifier pwm igbt
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47N60S5
Abstract: 47n60 SPW47N60S5
Text: 47N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 • Ultra low gate charge G,1 • Periodic avalanche proved 1 S,3 2 3 • Extreme dv/dt rated COOLMOS • Optimized capacitances
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SPW47N60S5
SPWx0N60S5
SPW47N60S5
P-TO247
47N60S5
Q67040-S4140
47N60S5
47n60
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BCM 4336
Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06
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B192-H6780-G9-X-7600
D-81669
VDSL5100i-E
VDSL6100i-E
BCM 4336
2A0565
C2335
2A280Z
C1740 bipolar transistor
transistor A1267
a1273 transistor
c2335 r
2B0565
2b265
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47N60S5
Abstract: 47N60 SPW47N60S5 spw47n60
Text: 47N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 VDS 600 V RDS(on) 0.07 Ω ID 47 A P-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated
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SPW47N60S5
P-TO247
Q67040-S4240
47N60S5
47N60S5
47N60
SPW47N60S5
spw47n60
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