CompactCellTM Static RAM
Abstract: No abstract text available
Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS
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Am45DL6408G
16-Bit)
8-Bit/512
73-Ball
limitation02
CompactCellTM Static RAM
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GL032A
Abstract: S71GL032A S71GL032
Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this
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S71GL032A
16-bit)
1M/512K/256K
GL032A
S71GL032
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A29L800
Abstract: A29L800V
Text: A29L800 Series 1M X 8 Bit / 512K X 16 Bit CMOS 3.0 Volt-only, Preliminary Boot Sector Flash Memory Features n Single power supply operation - Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications n Access times: - 70/90 max.
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A29L800
KbyteX15
KwordX15
48TFBGA)
A29L800V
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am29LV8000
Abstract: L800DB90VC S29AL008D L800DT S29al008
Text: Am29LV800D Data Sheet RETIRED PRODUCT This product has been retired and is not recommended for designs. For new and current designs, S29AL008D supersedes Am29LV800D and is the factory-recommended migration path for this device. Please refer to the S29AL008D data sheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only.
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Am29LV800D
S29AL008D
am29LV8000
L800DB90VC
L800DT
S29al008
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M420000000
Abstract: FSB073 3FE00
Text: PRELIMINARY Am42DL640AG Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features • Minimum 1 million write cycles guaranteed per sector
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Am42DL640AG
16-Bit)
73-Ball
5M-1994.
M420000000
FSB073
3FE00
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20888-2E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29LV800TE70/90/MBM29LV800BE70/90 • DESCRIPTION The MBM29LV800TE/BE are 8 M-bit, 3.0 V-only Flash memories organized as 1 M bytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29LV800TE/BE are offered in a 48-pin CSOP package. These devices are
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DS05-20888-2E
MBM29LV800TE70/90/MBM29LV800BE70/90
MBM29LV800TE/BE
48-pin
MBM29LV800TE/BE
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FPT-48P-M19
Abstract: FPT-48P-M20 mbm28f800 MBM28F800TA 77ff
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20841-4E FLASH MEMORY CMOS 8M 1M x 8/512K × 16 BIT MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands
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DS05-20841-4E
8/512K
9F800TA-55/-70/-90/MBM29F800BA-55/-70/-90
48-pin
44-pin
FPT-48P-M19
FPT-48P-M20
mbm28f800
MBM28F800TA
77ff
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FPT-48P-M19
Abstract: FPT-48P-M20
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-5E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball
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DS05-20871-5E
MBM29SL800TD/BD-10/12
MBM29SL800TD/BD
48-pin
48-ball
48-ball
MBM29SL800TD/MBM29SL800BD
F0210
FPT-48P-M19
FPT-48P-M20
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BGA-48P-M13
Abstract: FPT-48P-M19 FPT-48P-M20 MBM29LV160B-12PBT
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20846-6E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160T-80/-90/-12/MBM29LV160B-80/-90/-12 • GENERAL DESCRIPTION The MBM29LV160T/B is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words
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DS05-20846-6E
9LV160T-80/-90/-12/MBM29LV160B-80/-90/-12
MBM29LV160T/B
16M-bit,
48-pin
48-ball
F0306
BGA-48P-M13
FPT-48P-M19
FPT-48P-M20
MBM29LV160B-12PBT
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20888-2E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29LV800TE70/90/MBM29LV800BE70/90 • DESCRIPTION The MBM29LV800TE/BE are 8 M-bit, 3.0 V-only Flash memories organized as 1 M bytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29LV800TE/BE are offered in a 48-pin CSOP package. These devices are
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DS05-20888-2E
MBM29LV800TE70/90/MBM29LV800BE70/90
MBM29LV800TE/BE
48-pin
MBM29LV800TE/BE
F0201
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DL161
Abstract: DL162 DL163
Text: Am29DL16xD 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations — Data can be continuously read from one bank while
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Am29DL16xD
16-Bit)
Am29DL164D
Am29DL162D
DL161
DL162
DL163
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TRS-150
Abstract: No abstract text available
Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N02C1630E1AM Advance Information N02C1630E1AM Low Voltage, Extended Temperature FLASH AND SRAM COMBO MEMORY FEATURES BALL ASSIGNMENT 66-Ball FBGA Top View
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N02C1630E1AM
66-Ball
32K-word
128K-words
23134-C
TRS-150
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FTA073
Abstract: No abstract text available
Text: Am50DL128BH Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am50DL128BH
FTA073--73-Ball
FTA073
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M410000002
Abstract: DL161 DL162 DL163 m410000009 AM29DL164DT
Text: Am41DL16x4D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am41DL16x4D
M410000002
DL161
DL162
DL163
m410000009
AM29DL164DT
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Untitled
Abstract: No abstract text available
Text: A M D il ADVANCE INFORM ATIO N M i i .i i n - i i i i n i i in.i i i « Am29DL162C/Am29DL163C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS A R C H ITEC TU R A L AD VA N TA G ES
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Am29DL162C/Am29DL163C
16-Bit)
29DL162C/Am
29DL163C
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a19t
Abstract: ba1s 000IH
Text: TOSHIBA TENTATIVE TC58FYT160/B160FT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16-MBIT 2M X 8 BITS / 1M X 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FYT160/B160 is a 16,777,216 - bit, 3.0-V read-only electrically erasable and programmable
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TC58FYT160/B
160FT-12
16-MBIT
TC58FYT160/B160
48-pin
a19t
ba1s
000IH
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Untitled
Abstract: No abstract text available
Text: FLASH MEMORY CMOS 16 M 2 M x 8 / 1 M x 16 BIT MBM29LV160T-90-12/MBM29LV16 OB-90/-12 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs
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MBM29LV160T-90-12/MBM29LV16
OB-90/-12
48-pin
46-pin
48-ball
6C-46P-M02)
46002S-4C
MBM29LV160T-90/-12/M
LV160
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TH 50VSF1420/1421AAXB TOSHIBA MULTI CHIP INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS SRA M AND FLASH M EM O R Y M IXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF1420/1421AAXB is a mixed containing a package 2,097,152-bit SRAM and a 16,777,216 bit flash memory. The SEA M is organized as 262,144 words by 8 bits and the flash memory
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50VSF1420/1421AAXB
TH50VSF1420/1421AAXB
152-bit
48-pin
P-BGA48-1014-1
TH50VSF14
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC58FVT160/B160FT-85.-10,-12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16-M BIT 2M x 8 BITS / 1M x 16 BITS CMOS FLASH M EM O R Y DESCRIPTION The TC58FVT160/B160 is a 16,777,216 - bit, 3.0-V read-only electrically erasable and programmable
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TC58FVT160/B160FT-85
TC58FVT160/B160
48-pin
-VT160/B
160FT-85
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Untitled
Abstract: No abstract text available
Text: HN29WT800/HN29WB800 Series 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory HITACHI ADE-203-537 Z Preliminary - Rev. 0.0 J u n .14,1996 Description The Hitachi HN29WT800 Series, HN29WB800 Series are 1-Mword x 8-bit/512-kword x 16-bit CMOS Flash Memory with DINOR (Divided bitlineNOR) type memory cells, thatrealize programming and erase
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HN29WT800/HN29WB800
1048576-word
524288-word
16-bit
ADE-203-537
HN29WT800
HN29WB800
8-bit/512-kword
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a19t
Abstract: TC58FVB160FT 1X16 D8000H-DFFFFH
Text: TOSHIBA TENTATIVE TC58FVT160/B160FT-85#-10#-12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16-MBIT 2M X 8 BITS / 1M X 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT160/B160 is a 16,777,216 - bit, 3.0-V read-only e lectrically erasable and program m able
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TC58FVT160/B160FT-85
16-MBIT
TC58FVT
160/B
TC58FVT160/B160
48-pin
a19t
TC58FVB160FT
1X16
D8000H-DFFFFH
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8a21
Abstract: ba1s F2480 A12F TH50VSF2480AASB TH50VSF2481AASB a19t
Text: SFP- TOSHIBA Multi Chip Package SRAM & FLASH Memory 4M BIT SRAM X 8/ X16 16M BIT FLASH ( X 8/X 16) Data Sheet TOSHIBA TH50VSF2480/2481AASB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI CHIP PACKAGE DESCRIPTION
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F2480/2481
TH50VSF2480/2481AASB
304-bits
216-bits
65-pin
P-LFBGA65-1209-0
8a21
ba1s
F2480
A12F
TH50VSF2480AASB
TH50VSF2481AASB
a19t
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TH 50VSF1420/1421AAXB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI CHIP PACKAGE DESCRIPTION The TH50VSF1420/1421AAXB is a package of mixed 2,097,152-bit SRAM and 16,777,216-bit FLASH memory. The SRAM and FLASH memory organized 262,144 words by 8 bits SRAM and 1,048,576
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50VSF1420/1421AAXB
TH50VSF1420/1421AAXB
152-bit
216-bit
48-pin
P-BGA48-1014-1
50VSF1420/1421
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TH50VSF0320/0321BCXB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH M EM O RY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH 50V SF0320/0321BCXB is a mixed containing a package 1,048,576-bit SRAM and a 8,388,608bit flash memory. The SRAM is organized as 131,072 words by 8 bits and the flash memory is
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TH50VSF0320/0321BCXB
SF0320/0321BCXB
576-bit
608bit
48-pin
P-BGA48-1012-1
TH50VSF0320/0321
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