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    Cornell Dubilier Electronics Inc 476KXM063M

    CAP ALUM 47UF 20% 63V RADIAL TH
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    DigiKey 476KXM063M Bulk 16,000 1
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    Mouser Electronics 476KXM063M 19
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    RS 476KXM063M Bulk 2,500 34 Weeks 1
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    Illinois Capacitor Inc 476KXM063M

    Aluminum Electrolytic Capacitor 47Uf, 63V, 20%, Radial; Capacitance:47Μf; Voltage(Dc):63V; Capacitance Tolerance:± 20%; Capacitor Terminals:Pc Pin; Lifetime @ Temperature:3000 Hours @ 105°C; Polarity:Polar; Lead Spacing:3.5Mm Rohs Compliant: Yes |Illinois Capacitor 476KXM063M
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    Onlinecomponents.com 476KXM063M
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    476KXM063M Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    476KXM063M Illinois Capacitor Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 47UF 20% 63V THRU HOLE Original PDF

    476KXM063M Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2150N Rev. 0, 2/2007 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2150NR1 MRF6V2150NBR1 Designed primarily for CW large - signal output and driver applications with


    Original     		MRF6V2150N MRF6V2150NR1 MRF6V2150NBR1 MRF6V2150NR1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MD7P19130H Rev. 2, 8/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be


    Original     		MD7P19130H MD7P19130HR3 MD7P19130HSR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev. 1.1, 7/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P9300HR6 MRF8P9300HSR6 Designed for CDMA and multicarrier GSM base station applications with


    Original     		MRF8P9300H MRF8P9300HR6 MRF8P9300HSR6 MRF8P9300HR6 PDF

    81c1000

    Abstract: ATC100B241JT200XT
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP41KH Rev. 3, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial,


    Original     		MRF6VP41KH MRF6VP41KHR6 MRF6VP41KHSR6 81c1000 ATC100B241JT200XT PDF

    ATC100B390JT500XT

    Abstract: ATC100B200JT500XT ATC100B200 ATC100B4R7CT500X ATC100B100JT500X
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev. 1, 5/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P9300HR6 MRF8P9300HSR6 Designed for CDMA and multicarrier GSM base station applications with


    Original     		MRF8P9300H MRF8P9300HR6 MRF8P9300HSR6 92ficers, MRF8P9300H ATC100B390JT500XT ATC100B200JT500XT ATC100B200 ATC100B4R7CT500X ATC100B100JT500X PDF

    Untitled

    Abstract: No abstract text available
    Text: FEATURES Standardized case sizes - High ripple current – Multiple case sizes APPLICATIONS Bypass – Coupling – Filtering – De-coupling Operating Temperature Range Capacitance Tolerance WVDC Surge Voltage SVDC WVDC Dissipation Tan δ Factor Leakage Current


    Original     		1000uF 1000uF 18x35 128KXM016M 10x25 109KXM6R3M 16x31 128KXM025M 109KXM010M PDF

    Untitled

    Abstract: No abstract text available
    Text: FEATURES Standardized case sizes - High ripple current – Multiple case sizes APPLICATIONS Operating Temperature Range Capacitance Tolerance WVDC Surge Voltage SVDC WVDC Dissipation Tan δ Factor Bypass – Coupling – Filtering – De-coupling -55°C to +105°C


    Original     		1000uF 1000uF 18x35 128KXM016M 10x25 109KXM6R3M 16x30 128KXM025M 109KXM010M PDF

    2225x7r225kt3ab

    Abstract: MRF6VP41KH A114 A115 C101 JESD22 MRF6VP41KHR6 MRF6VP41KHSR6 ATC100B9R1CT500XT
    Text: Freescale Semiconductor ‘Technical Data Document Number: MRF6VP41KH Rev. 0, 1/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial,


    Original     		MRF6VP41KH MRF6VP41KHR6 MRF6VP41KHSR6 2225x7r225kt3ab MRF6VP41KH A114 A115 C101 JESD22 MRF6VP41KHSR6 ATC100B9R1CT500XT PDF

    109KXM6R3M

    Abstract: 228KXM6R3M
    Text: +105°C Low Impedance Radial Lead Aluminum Electrolytic Capacitors KXM For switching regulators and extended life applications FEATURES • High Ripple Current ■ High Frequency ■ Extended Life ■ Voltage Range: 6.3 WVDC to 100 WVDC ■ Capacitance Range: .47 µF to 15000 µF


    Original     		120Hz, 18x35 478KXM010MQV 16x25 18x40 159KXM010M 16x31 109KXM6R3M 228KXM6R3M PDF

    capacitor mttf

    Abstract: T491C105K0 AN1955 MD7P19130H MD7P19130HR3 MD7P19130HSR3 GRM55DR61H106KA88B
    Text: Freescale Semiconductor Technical Data Document Number: MD7P19130H Rev. 2, 8/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be


    Original     		MD7P19130H MD7P19130HR3 MD7P19130HSR3 capacitor mttf T491C105K0 AN1955 MD7P19130H MD7P19130HSR3 GRM55DR61H106KA88B PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1006H Rev. 0, 12/2013 RF Power Field Effect Transistors MMRF1006HR5 MMRF1006HSR5 N-Channel Enhancement-Mode Lateral MOSFETs Designed for pulse and CW wideband applications with frequencies up to


    Original     		MMRF1006H MMRF1006HR5 MMRF1006HSR5 MMRF1006HR5 PDF

    RF1000LF

    Abstract: RF600LF-16 2743019447 fair-rite 47nj capacitor transformer mttf RF600LF ATC100B241JT200XT RF1000LF-9 electrolytic capacitor series WB RF transformer turn ratio
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2150N Rev. 4, 4/2010 RF Power Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in


    Original     		MRF6V2150N MRF6V2150NR1 MRF6V2150NBR1 MRF6V2150NR1 RF1000LF RF600LF-16 2743019447 fair-rite 47nj capacitor transformer mttf RF600LF ATC100B241JT200XT RF1000LF-9 electrolytic capacitor series WB RF transformer turn ratio PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S7170N Rev. 1, 10/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7170NR3 Designed for base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station


    Original     		MRF8S7170N MRF8S7170NR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: +105°C Low Impedance Radial Lead Aluminum Electrolytic Capacitors KXM For switching regulators and extended life applications FEATURES • High Ripple Current ■ High Frequency ■ Extended Life ■ Voltage Range: 6.3 WVDC to 100 WVDC ■ Capacitance Range: .47 µF to 15000 µF


    Original     		120Hz, 109KXM6R3M 16x31 128KXM025M 109KXM010M 18x35 128KXM035M 109KXM016M 18x40 PDF

    Untitled

    Abstract: No abstract text available
    Text: FEATURES Standardized case sizes - High ripple current – Multiple case sizes APPLICATIONS Bypass – Coupling – Filtering – De-coupling Operating Temperature Range Capacitance Tolerance WVDC Surge Voltage SVDC WVDC Dissipation Tan δ Factor Leakage Current


    Original     		1000uF 1000uF 18x35 128KXM016M 10x25 109KXM6R3M 16x31 128KXM025M 109KXM010M PDF

    ATC100B9R1CT500XT

    Abstract: 2225x7r225kt3ab MRF6VP41KH mrf6vp41kh pcb 1000 watts power amp circuit diagram 22 pf capacitor datasheet A01TKLC NIPPON CAPACITORS MRF6VP41KHR6 A114
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP41KH Rev. 4, 3/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6VP41KHR6 MRF6VP41KHSR6 Designed primarily for pulsed wideband applications with frequencies up to


    Original     		MRF6VP41KH MRF6VP41KHR6 MRF6VP41KHSR6 MRF6VP41KHR6 ATC100B9R1CT500XT 2225x7r225kt3ab MRF6VP41KH mrf6vp41kh pcb 1000 watts power amp circuit diagram 22 pf capacitor datasheet A01TKLC NIPPON CAPACITORS A114 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S7170N Rev. 2, 2/2014 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7170NR3 Designed for base station applications with frequencies from 618 to 803 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		MRF8S7170N MRF8S7170NR3 2/2014Semiconductor, PDF

    MOSFET J132

    Abstract: J132 MOSFET J127 mosfet J1955 ATC100B101 MRF8S7170N 748 transistor on AN1955 JESD22-A113 JESD22-A114
    Text: Document Number: MRF8S7170N Rev. 0, 2/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7170NR3 Designed for base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station


    Original     		MRF8S7170N MRF8S7170NR3 MOSFET J132 J132 MOSFET J127 mosfet J1955 ATC100B101 MRF8S7170N 748 transistor on AN1955 JESD22-A113 JESD22-A114 PDF

    ATC100B102JT50XT

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2300N Rev. 5, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for CW large-signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in


    Original     		MRF6V2300N MRF6V2300NR1 MRF6V2300NBR1 MRF6V2300NR1 ATC100B102JT50XT PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2300N Rev. 1, 2/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for CW large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in


    Original     		MRF6V2300N MRF6V2300NR1 MRF6V2300NBR1 PDF

    atc100b6r2

    Abstract: KME63VB471M12x25LL AN1955 MRF8S9170NR3 KME63VB471M
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9170N Rev. 1, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S9170NR3 Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		MRF8S9170N MRF8S9170NR3 atc100b6r2 KME63VB471M12x25LL AN1955 MRF8S9170NR3 KME63VB471M PDF

    ATC100B

    Abstract: ATC100B1R0JP500XT KME63VB471M MRF8P9300H AN1955 MRF8P9300HR6 MRF8P9300HSR6 ATC100B200JT500XT ATC100B0R8JP500XT
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev. 1.1, 7/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P9300HR6 MRF8P9300HSR6 Designed for CDMA and multicarrier GSM base station applications with


    Original     		MRF8P9300H MRF8P9300HR6 MRF8P9300HSR6 MRF8P9300HR6 ATC100B ATC100B1R0JP500XT KME63VB471M MRF8P9300H AN1955 MRF8P9300HSR6 ATC100B200JT500XT ATC100B0R8JP500XT PDF

    atc100b270

    Abstract: No abstract text available
    Text: Freescale Semiconductor ‘Technical Data Document Number: MRF6VP41KH Rev. 1, 4/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial,


    Original     		MRF6VP41KH MRF6VP41KHR6 MRF6VP41KHSR6 atc100b270 PDF

    47nj capacitor

    Abstract: RF600 mcrc1 250GX-0300-55-22 Fair-Rite Products multicomp chip resistor ATC100B B06TJLC CDR33BX104AKYS ds2054
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2150N Rev. 3, 12/2008 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for CW large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in


    Original     		MRF6V2150N MRF6V2150NR1 MRF6V2150NBR1 MRF6V2150NR1 47nj capacitor RF600 mcrc1 250GX-0300-55-22 Fair-Rite Products multicomp chip resistor ATC100B B06TJLC CDR33BX104AKYS ds2054 PDF