KESTX01
Abstract: KESTX02
Text: KESTX01/KESTX02 At 900MHz Application Note AN4807 The KESTX01 and KESTX02 are designed for use in the 290-470MHz region, with a push-pull output stage designed to reduce second harmonic emissions when a suitable balanced output circuit is used. There is a
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KESTX01/KESTX02
900MHz
AN4807
KESTX01
KESTX02
290-470MHz
900MHz
KESTX01
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MAX2664
Abstract: MAX2665
Text: 19-5476; Rev 0; 8/10 TION KIT EVALUA BLE IL AVA A VHF/UHF Low-Noise Amplifiers Features The MAX2664 and MAX2665 are ultra-compact LNAs for VHF/UHF applications. These devices incorporate a broadband LNA with an integrated bypass switch. The MAX2664 covers the UHF frequency range from 470MHz
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MAX2664
MAX2665
470MHz
860MHz,
75MHz
230MHz.
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RA60H4047M1
Abstract: RA60H4047M1-101
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H4047M1 RoHS Compliance, 400-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H4047M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to
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RA60H4047M1
400-470MHz
RA60H4047M1
60-watt
470-MHz
RA60H4047M1-101
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RA30H4047M
Abstract: RA30H4047M-101
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4047M RoHS Compliance , 400-470MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4047M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to
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RA30H4047M
400-470MHz
RA30H4047M
30-watt
470-MHz
RA30H4047M-101
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gzl50
Abstract: RA07N4047M RA07N4047M-101
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07N4047 RA07N4047M 07N4047M RoHS Compliance , 400-470MHz 7.5W 9.6V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07N4047M is a 7.5-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 400- to
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RA07N4047M
07N4047
400-470MHz
RA07N4047M
470-MHz
gzl50
RA07N4047M-101
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MICRF102
Abstract: nu-horizons loop antenna ask 800 transmitter ic 747 pcb antenna transmitter ic transmitters
Text: 300-470MHz Transmitter IC Automatically Tunes Antenna Key Specifications ◆ ◆ ◆ ◆ 300MHz—470MHz –2dBm transmit power 5.75mA mean operating current 1µA standby current The Good Stuff ◆ Easy to manufacture — Automatic antenna tuning — Low component count
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300-470MHz
300MHz--470MHz
MICRF102
nu-horizons
loop antenna
ask 800 transmitter
ic 747
pcb antenna
transmitter ic
transmitters
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BS3550
Abstract: SAW resonator 433MHz 433MHz saw Based Transmitter Schematic 433 .92MHz RF PCB Receiver murata saw filter philips 433mhz receiver SIEMENS saw filter 2103d kesrx
Text: KESRX05 260 to 470MHz ASK Receiver with Power Down Preliminary Information DS5023 Issue 1.9 August 1999 Features Ordering Information ● ● ● ● ● ● ● In-band Interference Rejection 20dB max. 2103dBm Sensitivity IF BW = 470kHz AGC around LNA and Mixer
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KESRX05
470MHz
DS5023
2103dBm
470kHz)
15MHz
120dBm
BS3550
SAW resonator 433MHz
433MHz saw Based Transmitter Schematic
433 .92MHz RF PCB Receiver
murata saw filter
philips 433mhz receiver
SIEMENS saw filter
2103d
kesrx
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RA30H4047M
Abstract: RA30H gp 532 RA30H4047M-101
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4047M RoHS Compliance , 400-470MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4047M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to
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RA30H4047M
400-470MHz
RA30H4047M
30-watt
470-MHz
RA30H
gp 532
RA30H4047M-101
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Untitled
Abstract: No abstract text available
Text: RF6514 RF65143.3V to 4.0V, 470MHz to 510MHz Transmit/Receive Module 3.3V TO 4.0V, 470MHz to 510MHz TRANSMIT/RECEIVE MODULE VReg VCC 2 GND GND GND 1 GND GND GND Package: LGA, 28-Pin, 5.5mm x 5.0mm 28 27 26 25 24 23 22 GND 21 GND 20 GND 19 GND Features Rx Insertion Loss: 1dB
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RF6514
RF65143
470MHz
510MHz
510MHz
28-Pin,
30dBm
490MHz
DS120611
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SmartRF04
Abstract: MSP430FG4618 Features
Text: Contact Us | TI Worldwide: United States | my.TI Login GO Search by Part Number Search by Keyword GO All Searches TI Home > Semiconductors > RF/IF and ZigBee Solutions > Low Power RF ICs > Sub 1-GHz > CC1100E Evaluation Module 470MHz Status: ACTIVE Alert me about changes
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CC1100E
470MHz
CC1100E-EMK470
CC1100E-EMK470
SmartRF04
MSP430FG4618 Features
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RA07H4047M-101
Abstract: ra07h4047m
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H4047M RoHS Compliance ,400-470MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07H4047M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt portable radios that operate in the 400- to 470-MHz
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RA07H4047M
400-470MHz
RA07H4047M
470-MHz
RA07H4047M-101
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RA13H4047M
Abstract: rf power amplifier circuit by 400-470mhz RF MODULE 435Mhz RF MOSFET MODULE RA13H4047M-101
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H4047M RoHS Compliance , 400-470MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H4047M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to
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RA13H4047M
400-470MHz
RA13H4047M
13-watt
470-MHz
rf power amplifier circuit by 400-470mhz
RF MODULE 435Mhz
RF MOSFET MODULE
RA13H4047M-101
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Mitsubishi transistor rf final
Abstract: RA03M4547MD 1538d RA03M4547MD-101 POUT38
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M4547MD RoHS Compliance , 450-470MHz 38dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M4547MD is a 38 dBm output RF MOSFET Amplifier Module for 7.2 volt portable radios that operate in the
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RA03M4547MD
450-470MHz
38dBm
RA03M4547MD
38dBm
19dBm
-25dBc
35dBm
Mitsubishi transistor rf final
1538d
RA03M4547MD-101
POUT38
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transistor MOSFET 924 ON
Abstract: RF MOSFET MODULE RA45H4047M RA45H4047M-101 circuit diagram power amplifier 450w mitsubishi power module
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H4047M RoHS Compliance, 400-470MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H4047M is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to
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RA45H4047M
400-470MHz
RA45H4047M
45-watt
470-MHz
transistor MOSFET 924 ON
RF MOSFET MODULE
RA45H4047M-101
circuit diagram power amplifier 450w
mitsubishi power module
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P104W
Abstract: 2SC2104
Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2104 Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES: . Output Power : P0=3W Min. (f=470MHz, VCC=12.6V, P1=0.4W) . 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VcC=15V, Pi=0.4W, f=470MHz
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2SC2104
470MHz,
470MHz
470MHz
P104W
2SC2104
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PO7C
Abstract: 2SC2380 2SC238
Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2380 Unit in m m UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P0 =12W Min. (f=470MHz, V C C=12.6V, Pi=3W) . 1 0 0 % T e s t e d f o r L o a d M i s m a t c h S t r e s s at A l l P h a s e A n g l e s w i t h 30:1 V S W R
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2SC2380
470MHz,
470MHz
10tnA,
70MHz
PO7C
2SC2380
2SC238
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2SC2379
Abstract: No abstract text available
Text: 2SC2379 SILICON NPN EPITAXIAL PLANAR TY P E Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P0=6W Min. (f=470MHz, VCC=12.6V, Pi=lW) . 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VCC=12.5V, P0-6.5W, f=470MHz
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2SC2379
470MHz,
470MHz
470MH
47QMHz
x15mm
2SC2379
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Untitled
Abstract: No abstract text available
Text: GEC P LES S EY w , O c t o b e r 1994 ADVANCE INFORMATION S E M I C O N D U C T O R S D S 4 0 0 3 - 1.4 SL6610 DIRECT CONVERSION FSK DATA RECEIVER This device is an advanced direct conversion receiver for operation up to 470MHz. The design is based on the SL6609A
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SL6610
470MHz.
SL6609A
37bfl522
0Q23172
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTOJ 9097250 T O SH IB A Sb DE I ^ O T T a S Q Q 0 Q 7 4 C14 b <D I S C R E T E / O P T O SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P0=25W Min.) (f=470MHz, V CC=12.6V, Pi=10W)
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Q0Q74C
470MHz,
470MHz
2SC2173
470MHz
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC2642 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 7 ^ f ? fi J 7 UHF BAND POWER AMPLIFIER APPLICATIONS • U nit in mm O utput Power : Po = 12W Min. (f= 470MHz, V c c = 12.6V, Pi = 3W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL
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2SC2642
470MHz,
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Untitled
Abstract: No abstract text available
Text: B U R R -B R O W N > B B I Wideband, Low Power Voltage Feedback OPERATIONAL AMPLIFIER FEATURES DESCRIPTION • STABLE IN GAINS: > 2V/V The OPA651 is a low power, wideband voltage feed back operational amplifier. It features a bandwidth of 470MHz as well as a 12-bit settling time of only 16ns.
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OPA651
470MHz
12-bit
940MHz
-78dB
5M-1982.
OPA651
4533C
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3SK232
Abstract: 3SK249 GI 242
Text: - 242 - 'M f- Ç fflM O S F E T l ^ te § r?; •*« #3 S K 2 3 0 BS ® É :V H F /C A T V í a U « ts T5 S f ê iS 3.30 Vds=6 V, Ì d=10hiA. 1MHz,* 4 7’U<0T7'' 0.03 Vds=6 V. ID=10mA, 1MHz, * - / iS R Ä L - e 19.50 22.50 Vds=6 V, 1D=10mA. 470MHz* i] y t- ii 7
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10tnA,
470MHz*
10jiA,
800MHz
10-24mA
100MHz
3SK232
3SK249
GI 242
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Untitled
Abstract: No abstract text available
Text: HA-2850 h a r r is S E M I C O N D U C T O R Ê M M • 470MHz, Low Power, High Slew Rate Operational Amplifier November 1996 Features Description • Low Supply The HA-2850 is a wideband, high slew rate, operational
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HA-2850
470MHz,
HA-2850
40V/ns
470MHz
HA-28s
1650nm
1310nm
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Untitled
Abstract: No abstract text available
Text: DIODES 25 TO K O 9' 4 * - Variable Capacitance Diodes Application For Communications Equipment Taping KV1811 vco 8 Single type C iv: 19.51-23.55 Csv: 2 .1 4 -2 .9 2 7.8 Typ. 1.8 8pF, 470MHz SOT23 • • KV1812 vco 8 Single type C iv: 14.50-17.50 Csv: 1 .6 4-2 .24
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KV1811
470MHz
KV1812
KV1814
KV1823
KV1824
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