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    46M IC Search Results

    46M IC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
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    46M IC Price and Stock

    Microchip Technology Inc MIC5321-46MYD6-TR

    LDO Voltage Regulators Dual 150mA LDO Enable and Bypass
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    Infineon Technologies AG TLE5046MTICPW250HALA1

    Board Mount Hall Effect / Magnetic Sensors
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    Infineon Technologies AG TLE5046MTICAKLRHALA1

    Speed Sensors
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    Infineon Technologies AG TLE5046MTICPW2100HALA1

    Speed Sensors
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    Infineon Technologies AG TLE5046MTICAKERRHALA1

    Speed Sensors
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    Find more 46M IC price and stock on Findchips.com

    46M IC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DMC3032LSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • N EW PRODU CT • • • • • • • • Low On-Resistance N-Channel: 32m @ 10V 46m @ 4.5V P-Channel: 39m @ 10V 53m @ 4.5V Low Input Capacitance Fast Switching Speed


    Original     		PDF DMC3032LSD AEC-Q101 J-STD-020 DS32153

    mosfet 30V 18A TO 252

    Abstract: 2SJ601 smd 18A equivalent smd mosfet IC 46M S-108
    Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SJ601 TO-252 +0.1 0.80-0.1 Built-in gate protection diode 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 0.127 max 3.80 MAX. VGS = -4.0 V, ID =-18 A Low Ciss: Ciss = 3300 pF TYP. +0.8 0.50-0.7 +0.15 5.55-0.15 RDS(on)2 = 46m


    Original     		PDF 2SJ601 O-252 --18A mosfet 30V 18A TO 252 2SJ601 smd 18A equivalent smd mosfet IC 46M S-108

    C3032LD

    Abstract: No abstract text available
    Text: DMC3032LSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device V BR DSS Features RDS(on) max ID Max • Low On-Resistance TA = +25C  N-Channel: 32mΩ @ 10V 46mΩ @ 4.5V (Notes 5 & 7) NEW PRODUCT Q1 Q2  P-Channel: 39mΩ @ 10V 6.1A


    Original     		PDF DMC3032LSD DS32153 C3032LD

    DMC3032

    Abstract: DMC3032LSD dmc30 C3032LD C30-32 DS32153
    Text: DMC3032LSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • NEW PRODUCT • • • • • • • • Low On-Resistance N-Channel: 32mΩ @ 10V 46mΩ @ 4.5V P-Channel: 39mΩ @ 10V 53mΩ @ 4.5V Low Input Capacitance Fast Switching Speed


    Original     		PDF DMC3032LSD AEC-Q101 J-STD-020 DS32153 DMC3032 DMC3032LSD dmc30 C3032LD C30-32

    ELM14803AB

    Abstract: No abstract text available
    Text: 双 P 沟道 MOSFET ELM14803AB-N •概要 ■特点 ELM14803AB-N 是 P 沟道低输入电容低工作电压、 •Vds=-30V 低导通电阻的大电流 MOSFET，内藏有两个 MOSFET。 ·Id=-5A Vgs=-10V ·Rds(on) < 46mΩ (Vgs=-10V) ·Rds(on) < 74mΩ (Vgs=-4.5V)


    Original     		PDF ELM14803AB-N ELM14803AB

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification KDD3680 +0.15 6.50-0.15 +0.2 5.30-0.2 Features Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Fast switching speed High performance trench technology for extremely low RDS ON 2.3 +0.1 0.60-0.1 0.127 max +0.28 1.50-0.1 +0.1


    Original     		PDF KDD3680 O-252

    1b.1 smd transistor

    Abstract: smd transistor nc 61 1B 4 SMD 1b smd transistor smd diode JC 7 SMD Transistor nc KDD3680
    Text: Transistors IC SMD Type 100V N-Channel Power Trench MOSFET KDD3680 +0.15 6.50-0.15 +0.2 5.30-0.2 Features Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Fast switching speed High performance trench technology for extremely low RDS ON 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15


    Original     		PDF KDD3680 O-252 1b.1 smd transistor smd transistor nc 61 1B 4 SMD 1b smd transistor smd diode JC 7 SMD Transistor nc KDD3680

    TN6Q04

    Abstract: 2SJ585 TN6Q03 2sk4100 2SK4096LS 2SK4100ls 2SJ655 2SK3748 2SK4087LS datasheet 2SK4101LS
    Text: Large Signal Packages Selector Guide CONTENTS ŝQuick Selection Guide P-channel New 2 •TO-3JML Package 14 ŝQuick Selection Guide N-channel New 3~5 ■TO-3PBL Package 14 6,7 ■TO-3PB Package 14 8.9 ■TO-3PML Package 14 15 ŝSwitching Power Supply ŝMotor Drive Use


    Original     		PDF O-220 O-220ML O-220FI O-220FI5H O-220FI O-220FI5H-HB O-220FI5H-HA TN6Q04 2SJ585 TN6Q03 2sk4100 2SK4096LS 2SK4100ls 2SJ655 2SK3748 2SK4087LS datasheet 2SK4101LS

    TN6Q04

    Abstract: 2sk4100 2SJ585 2SK4100ls 2SK4101LS INV250 2SK4096LS 2SJ406 2SK3745LS 2SJ584
    Text: SANYO Power Transistors Bipolar Transistor Series & Schottky Barrier Diode Series CONTENTS 2ĝ5 ŝTO-220MF Package 6 ŝTO-220FI Package ŝLow-saturation Voltage Transistors 7 ŝTO-220FI5H Package 14 ŝHorizontal Deflection Output Use 8 ŝTO-220ML Package 15


    Original     		PDF O-220MF O-220FI O-220FI5H O-220ML O-126 O-126LP O-126ML O-220FI O-220FI5H-HB O-220FI5H-HA TN6Q04 2sk4100 2SJ585 2SK4100ls 2SK4101LS INV250 2SK4096LS 2SJ406 2SK3745LS 2SJ584

    1159m

    Abstract: No abstract text available
    Text: MAX3268 I/O Model SPICE I/O Macromodels aid in understanding signal integrity issues in electronic systems. Most of Maxim’s High Frequency/Fiber Communication ICs utilize input and output I/O circuits with Current Mode Logic (CML), Positive Emitter Coupled Logic (PECL), and Low


    Original     		PDF MAX3268 326E-017 573E-020 022E-029 968E-018 H14E04 1159m

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS30KMH-03 HIGH-SPEED SWITCHING USE FS30KMH-03 4 ' 2 .5 V D R IV E ' V d s s . .3 0 V ' rDS ON (MAX). .46m i2


    OCR Scan     		PDF FS30KMH-03 46mi2 O-220FN 71Q-123

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS30VSH-03 HIGH-SPEED SWITCHING USE OUTLINE DRAWING I q J w e Q w r 2.5V DRIVE rDS ON (MAX). 46m i2 IntegratedFast Recovery Diode (TYR) 45ns 6 +i CO oi q w e r V d s s . 3 0 V


    OCR Scan     		PDF FS30VSH-03 O-220S

    FS30SM-03

    Abstract: 324f
    Text: MITSUBISHI Neh POWER MOSFET FS30SM-03 HIGH-SPEED SWITCHING USE FS30SM-03 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX f 3.2 £ kr 5.45 0.6 o i 10V DRIVE V d s s . 3 0 V rDS ON (MAX). 46m i2


    OCR Scan     		PDF FS30SM-03 46mi2 57KH23 FS30SM-03 324f

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS30SMH-03 HIGH-SPEED SWITCHING USE FS30SMH-03 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. / 3.2 b/ 5.45 0.6 f= d J bd^ O l 2.5V DRIVE V d s s .30V rDS ON (MAX). 46m i2


    OCR Scan     		PDF FS30SMH-03

    Untitled

    Abstract: No abstract text available
    Text: 7 K B B B S Crystal Oscillator VCXO-105N N E iM fP *fl» B » /v c x o • ^ Jl/ F e a t u r e •2 . 0 c c < 7 ) ' • /■ ? ) V O xJU K • “ S m a ll J ( 2 0 . 8 x I 3 . 0 8 X 7 . 46m m ) S i z e ” a s s m a ll a s 2 . 0 c c . ( 2 0 . 8 x 1 3 . 0 8 x 7 . 4 6 m m )


    OCR Scan     		PDF VCXO-105N VCXO-I05N

    NMC9346

    Abstract: nmc93c46 M14A NMC9306 NMC93C26N NMC93C46N NMC93C56 NMC93C66 NMC93C06EM
    Text: P RELIM INARY NMC93C06/C26/C46 256-Bit/512-Bit/1024-Bit Serial Electrically Erasable Programmable Memory G eneral Description C om patibility w ith O ther Devices The NMC93C06/NMC93C26/NMC93C46 are 256/512/ 1024 bits of CMOS electrically erasable memory divided


    OCR Scan     		PDF NMC93C06/C26/C46 256-Bit/512-Bit/1024-Bit NMC93C06/NMC93C26/NMC93C46 16-bit 14-pin TL/D/8790-7 TL/D/8790-8 NMC93C26. NMC93C06. NMC9346 nmc93c46 M14A NMC9306 NMC93C26N NMC93C46N NMC93C56 NMC93C66 NMC93C06EM

    NMC93C46M8

    Abstract: NMC93C06N nmc93c46 NMC9306 NMC9346 NMC93C56 NMC93C66 NMC93C06EN
    Text: NATL S EMI COND MEMORY 3IE D b S O iiat. 001,3451 b National Semiconductor O <o CO o NMC93C06/C46 256-Bit/1024-Bit Serial Electrically Erasable Programmable Memory General Description Compatibility with Other Devices The NMC93C06/NMC93C46 are 256/1024 bits of CMOS


    OCR Scan     		PDF NMC93C06/C46 256-Bit/1024-Bit NMC93C06/NMC93C46 16-blt NMC93C06/ NMC93C48 X015X. NMC93CÃ T-46-13-27 Tt/D/8790-10 NMC93C46M8 NMC93C06N nmc93c46 NMC9306 NMC9346 NMC93C56 NMC93C66 NMC93C06EN

    d879

    Abstract: IC 46M NMC93C56 NMC93C06MM NMC93C46
    Text: NATL SEdlCOND -CHEHORY} 3.QE D | bSDliab OOblbBE □ | " PRELIMINARY NMC93C06/C26/C46 256-Bit/512-Bit/ 1024-Bit Serial Electrically Erasable Programmable Memory General Description Compatibility with Other Devices The NMC93C06/NMC93C26/NMC93C46 are 256/512/


    OCR Scan     		PDF NMC93C06/NMC93C26/NMC93C46 T-46-13-27 NMC93C06/C26/C46 256-Bit/512-Bit/ 1024-Bit NMC93C06/NMC93C26/NMC93C46 16-bit 14-pin d879 IC 46M NMC93C56 NMC93C06MM NMC93C46

    Untitled

    Abstract: No abstract text available
    Text: 5 6 E r F REV [ G DESCRIP TTON [ H_ DATE 1 NDTEì L. MAXIMUM E L E C T R IC CURRENT; o' CO o -H CD \ü A,V/,G, AM Pr CD OJ o -h 12 35 10 50 R, MAXIMUM E L E C T R IC A L RATING* 75°C 600 V E ILT S MAX, CD ^T 00 3r IN SU LATED M M ATEREAU V I N Y L 4r INSULATIDNi CDLDR: Y E L L D V


    OCR Scan     		PDF L2-10A

    Untitled

    Abstract: No abstract text available
    Text: PHOTOSWITCH Photoelectric Sensors ClearSight 7000 Miniature Rectangular Style Specifications \u n Typical Response Curve Field of View 3° Emitter LED F Object to be Sensed V isib le red 660nm QD Cordsets and Accessories D escription C atalog N um ber


    OCR Scan     		PDF 660nm 889D-F4AC-2 42SMU-7260 42SMU-7260-QD 42SMU-7261 42SMU-7261

    2SK2437

    Abstract: CPH3304 mosfet marking kf 78m marking 2SK2442 48M marking
    Text: Medium Output Power M0SFETs 2 LD S r~ i e s (L owD rive)VDS S :1 2V — 200V(F.C.P:F 1 a t SAfÈYO Channe 1 P i-o c e s s) SANYO has realized low-threshold voltage by optimum design of impurity concentration of Si or Si surface by adopting the F.C. P. process


    OCR Scan     		PDF MT980624TR 2SK2437 CPH3304 mosfet marking kf 78m marking 2SK2442 48M marking

    AK93C46

    Abstract: ER5911 ER59256 AK93C46M NCR59306 93c46 6 93C46 93c46f 93C46 national 93C46M
    Text: A K93C46 Series 1 0 2 4 -B IT S E R IA L 5 V O N L Y C M O S E L E C T R IC A L Y E R A S A B L E PRO G RAM M A BLE MEMORY FEATURES •ADVANCED CMOS E2PROM TECHNOLOGY ■ READ/WRITE NON-VOLATILE MEMORY —Single 5V supply operation —1024 bits, 64 x 16 organization


    OCR Scan     		PDF AK93C46 1024-BIT 100a/A AK93C46M/MF) AK93C46F AKS3C46M AK93C46MF 93C46/F 93C46M/MF ER5911 ER59256 AK93C46M NCR59306 93c46 6 93C46 93c46f 93C46 national 93C46M

    MTK MT3318

    Abstract: GPS Receiver MT3318 Module sirf star III MT3318 gps Mediatek MT3318 chip AR1511 SIRF III mediatek mt3318 MC-1513 mtk gps
    Text: C h ip G P S M od ulo Input Voltage SC-1513 AC-1513 ♦ EH U A R T /U S B O perating Temp °C S torag e Temp(°C) Dim ension(m m ) 3 .0 V ~ 4 .2 V 15 x 13 x 2 .2 m m 3 .0 V - 5 .0 V 15 x 13 x 2 .2 m m pin-to-pin compatible MC-1513 U A R T /U S B UC-1513 3 .0 V ~ 4 .2 V


    OCR Scan     		PDF SC-1513 AC-1513 MC-1513 UC-1513 SC-GPD14 UC-GPD14 SC-2024 TMC-1009 RSC-2024 BGT-31) MTK MT3318 GPS Receiver MT3318 Module sirf star III MT3318 gps Mediatek MT3318 chip AR1511 SIRF III mediatek mt3318 MC-1513 mtk gps

    Untitled

    Abstract: No abstract text available
    Text: IC dependence of osc i11 at inq character ist ics uPDI7P246MIMC FCR6.0MC5 - S Room Temp. Udd [U] 3 itema~e uPDI7P246M1MC - 901 FCR6.0MC5 TcP 20 [deg] o a. U1H/U1L EU] b. U2H/U2L EU1 0 Typical *- » Uorst m c, Fosc EX] d, Trise 400 EuS] 300 200 100 60


    OCR Scan     		PDF uPDI7P246MIMC uPDI7P246M1MC i11at uPD17P246M1MC