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    46A TRANSISTOR SMD Search Results

    46A TRANSISTOR SMD Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    46A TRANSISTOR SMD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TO-247 65c7045

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPW65R045C7 DataSheet Rev.2.1 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPW65R045C7 1Description TO-247


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    PDF IPW65R045C7 O-247 TO-247 65c7045

    65c7045

    Abstract: IPZ65R045C7 SMD qf
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPZ65R045C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPZ65R045C7 1Description PG-TO247-4


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    PDF 650VCoolMOSTMC7PowerTransistor IPZ65R045C7 IPZ65R045C7 PG-TO247-4 65c7045 SMD qf

    TO-247 65c7045

    Abstract: IPW65R045C7 65C7045
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPW65R045C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPW65R045C7 1Description TO-247


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    PDF 650VCoolMOSTMC7PowerTransistor IPW65R045C7 IPW65R045C7 O-247 TO-247 65c7045 65C7045

    65C7045

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPP65R045C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPP65R045C7 1Description TO-220 tab


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    PDF 650VCoolMOSTMC7PowerTransistor IPP65R045C7 IPP65R045C7 O-220 65C7045

    65C7045

    Abstract: TO-247 65c7045
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPP65R045C7 DataSheet Rev.2.1 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPP65R045C7 1Description TO-220 tab


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    PDF IPP65R045C7 O-220 65C7045 TO-247 65c7045

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPB65R045C7 DataSheet Rev.2.1 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPB65R045C7 1Description D²PAK


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    PDF IPB65R045C7

    65C7045

    Abstract: DT80A
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPB65R045C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPB65R045C7 1Description D²PAK


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    PDF 650VCoolMOSTMC7PowerTransistor IPB65R045C7 IPB65R045C7 65C7045 DT80A

    smd diode 46A

    Abstract: 1E14 2E12 FSYC260D FSYC260D1 FSYC260D3 FSYC260R FSYC260R1 FSYC260R3 46a transistor smd
    Text: FSYC260D, FSYC260R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs July 1998 Features Description • 46A, 200V, rDS ON = 0.050Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


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    PDF FSYC260D, FSYC260R smd diode 46A 1E14 2E12 FSYC260D FSYC260D1 FSYC260D3 FSYC260R FSYC260R1 FSYC260R3 46a transistor smd

    Untitled

    Abstract: No abstract text available
    Text: FSYC260D, FSYC260R TM Data Sheet February 2001 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs • 46A, 200V, rDS ON = 0.050Ω The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings.


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    PDF FSYC260D, FSYC260R

    1E14

    Abstract: 2E12 FSYC260D FSYC260D1 FSYC260D3 FSYC260R FSYC260R1 FSYC260R3 Rad Hard in Fairchild for MOSFET
    Text: FSYC260D, FSYC260R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


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    PDF FSYC260D, FSYC260R 1E14 2E12 FSYC260D FSYC260D1 FSYC260D3 FSYC260R FSYC260R1 FSYC260R3 Rad Hard in Fairchild for MOSFET

    1E14

    Abstract: 2E12 FSYC260D FSYC260D1 FSYC260D3 FSYC260R FSYC260R1 FSYC260R3 Rad Hard in Fairchild for MOSFET
    Text: FSYC260D, FSYC260R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs December 2000 • 46A, 200V, rDS ON = 0.050Ω • Total Dose - Meets Pre-rad Specifications to 100 krad (Si) • Single Event - Safe Operating Area Curve for Single Event Effects


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    PDF FSYC260D, FSYC260R 36MeV/mg/cm2 MIL-PRF-19500, MIL-PRF-19500. 1E14 2E12 FSYC260D FSYC260D1 FSYC260D3 FSYC260R FSYC260R1 FSYC260R3 Rad Hard in Fairchild for MOSFET

    Untitled

    Abstract: No abstract text available
    Text: FSYC260D, FSYC260R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs [ /Title The Discrete Products Operation of Intersil has developed a FSYC series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


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    PDF FSYC260D, FSYC260R

    smd transistor 46B

    Abstract: smd transistor marking 47B SMD TRANSISTOR MARKING 46B 46B smd SMD TRANSISTOR MARKING 1B NPN marking 47b smd transistor marking 1E smd marking 47B SMD TRANSISTOR MARKING 1F TRANSISTOR SMD catalog
    Text: Home | Profile | Designer Kits | Products | Applications | Catalog | Contact Us | Event Calendar | Terms & Conditions Product Catalog > Transistors > Small Signal Bipolar Transistors > Part Number BC847A product family SOT-23 Plastic-Encapsulate Biploar Transistors


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    PDF BC847A OT-23 100mA 225mW 100MHz smd transistor 46B smd transistor marking 47B SMD TRANSISTOR MARKING 46B 46B smd SMD TRANSISTOR MARKING 1B NPN marking 47b smd transistor marking 1E smd marking 47B SMD TRANSISTOR MARKING 1F TRANSISTOR SMD catalog

    smd transistor 46B

    Abstract: SMD TRANSISTOR MARKING 46B smd transistor marking 47B 46B smd smd transistor 1g SMD TRANSISTOR MARKING 1B sot23 marking 47C BC849C BC846A BC847A
    Text: Home | Profile | Designer Kits | Products | Applications | Catalog | Contact Us | Event Calendar | Terms & Conditions Product Catalog > Transistors > Small Signal Bipolar Transistors > Part Number BC847B product family SOT-23 Plastic-Encapsulate Biploar Transistors


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    PDF BC847B OT-23 100mA 225mW 100MHz smd transistor 46B SMD TRANSISTOR MARKING 46B smd transistor marking 47B 46B smd smd transistor 1g SMD TRANSISTOR MARKING 1B sot23 marking 47C BC849C BC846A BC847A

    1E14

    Abstract: 2E12 FSPYC164D1 FSPYC164R3 Rad Hard in Fairchild for MOSFET
    Text: FSPYC164R, FSPYC164F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the


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    PDF FSPYC164R, FSPYC164F FSPYC164F 1E14 2E12 FSPYC164D1 FSPYC164R3 Rad Hard in Fairchild for MOSFET

    2E12

    Abstract: FSYC160D FSYC160D1 FSYC160D3 FSYC160R FSYC160R1 FSYC160R3 FSYC160R4
    Text: FSYC160D, FSYC160R Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs July 1998 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


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    PDF FSYC160D, FSYC160R 2E12 FSYC160D FSYC160D1 FSYC160D3 FSYC160R FSYC160R1 FSYC160R3 FSYC160R4

    2E12

    Abstract: FSYC160D FSYC160D1 FSYC160D3 FSYC160R FSYC160R1 FSYC160R3 FSYC160R4
    Text: FSYC160D, FSYC160R Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs July 1998 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


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    PDF FSYC160D, FSYC160R 2E12 FSYC160D FSYC160D1 FSYC160D3 FSYC160R FSYC160R1 FSYC160R3 FSYC160R4

    1E14

    Abstract: 2E12 FSPYC164D1 FSPYC164R3 relay 12V, 70A
    Text: FSPYC164R, FSPYC164F TM Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the


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    PDF FSPYC164R, FSPYC164F 1E14 2E12 FSPYC164D1 FSPYC164R3 relay 12V, 70A

    2E12

    Abstract: FSYC160D FSYC160D1 FSYC160D3 FSYC160R FSYC160R1 FSYC160R3 FSYC160R4 Rad Hard in Fairchild for MOSFET
    Text: FSYC160D, FSYC160R Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically


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    PDF FSYC160D, FSYC160R 2E12 FSYC160D FSYC160D1 FSYC160D3 FSYC160R FSYC160R1 FSYC160R3 FSYC160R4 Rad Hard in Fairchild for MOSFET

    1E14

    Abstract: 2E12 FSPYC164D1 FSPYC164R3
    Text: FSPYC164R, FSPYC164F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the


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    PDF FSPYC164R, FSPYC164F to300K FSPYC164F 1E14 2E12 FSPYC164D1 FSPYC164R3

    Untitled

    Abstract: No abstract text available
    Text: FSPYC164R, FSPYC164F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the


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    PDF FSPYC164R, FSPYC164F

    Untitled

    Abstract: No abstract text available
    Text: FSYC260D, FSYC260R H A R R IS X S em iconductor Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs July 1998 Features Description • 46A, 200V, Tqs ^o N = 0.050£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan
    PDF FSYC260D, FSYC260R

    smd code 46n

    Abstract: SPB46N03L smd diode 46A 46n03l
    Text: SIEMENS SPP46N03L SPB46N03L Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/df rated • 175°C operating temperature Type SPP46N03L Vfes 30 V b f lDS on @ VGS 46 A SPB46N03L 0.018 Q


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    PDF SPP46N03L SPB46N03L SPB46N03L P-T0220-3-1 P-T0263-3-2 Q67040-S4147-A2 Q67040-S4743-A3 smd code 46n smd diode 46A 46n03l

    Untitled

    Abstract: No abstract text available
    Text: FSYC160D, FSYC160R Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs July 1998 Features Description . 70A, 100V, rDS 0 N = 0.022£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


    OCR Scan
    PDF FSYC160D, FSYC160R FSYC160R