Untitled
Abstract: No abstract text available
Text: EIM1011-4 10.7 – 11.7GHz Multi-Stage Power Amplifier UPDATED: 01/15/2008 FEATURES • • • • • 10.7– 11.7GHz Operating Frequency Range 35.5dBm Output Power @1dB Compression 27.0 dB Typical Power Gain @1dB gain compression -45dBc Typical OIM3 @each tone Pout 22dBm
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EIM1011-4
-45dBc
22dBm
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Untitled
Abstract: No abstract text available
Text: FLM3135-8F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.5dBm Typ. High Gain: G1dB = 11.0dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -45dBc@Po = 28.5dBm Broad Band: 3.1 ~ 3.5GHz Impedance Matched Zin/Zout = 50Ω
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FLM3135-8F
-45dBc
FLM3135-8F
25hods
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Untitled
Abstract: No abstract text available
Text: FLM7185-12F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.0dBm Typ. High Gain: G1dB = 8.0dB (Typ.) High PAE: ηadd = 30% (Typ.) Low IM3 = -45dBc@Po = 30.0dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Ω
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FLM7185-12F
-45dBc
FLM7185-12F
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Untitled
Abstract: No abstract text available
Text: FLM1011-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω
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FLM1011-6F
-45dBc
25dBm
FLM1011-6F
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Untitled
Abstract: No abstract text available
Text: FLM1314-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.0dBm Typ. High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 23% (Typ.) Low IM3 = -45dBc@Po = 29.0dBm Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω
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FLM1314-12F
-45dBc
FLM1314-12F
25hods
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Untitled
Abstract: No abstract text available
Text: FLM5972-4F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 36% (Typ.) Low IM3 = -45dBc@Po = 25.5dBm Broad Band: 5.9 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω
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FLM5972-4F
-45dBc
FLM5972-4F
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FLM3135-18F
Abstract: No abstract text available
Text: FLM3135-18F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 10.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -45dBc@Po = 32.0dBm Broad Band: 3.1 ~ 3.5GHz Impedance Matched Zin/Zout = 50Ω
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FLM3135-18F
-45dBc
FLM3135-18F
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FLM1011-6F
Abstract: No abstract text available
Text: FLM1011-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω
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FLM1011-6F
-45dBc
25dBm
FLM1011-6F
V4888
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FLM5972-4F
Abstract: No abstract text available
Text: FLM5972-4F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 36% (Typ.) Low IM3 = -45dBc@Po = 25.5dBm Broad Band: 5.9 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω
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FLM5972-4F
-45dBc
FLM5972-4F
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FLM1213-6F
Abstract: No abstract text available
Text: FLM1213-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.0dB (Typ.) High PAE: ηadd = 27% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 12.7 ~ 13.2GHz Impedance Matched Zin/Zout = 50Ω
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FLM1213-6F
-45dBc
25dBm
FLM1213-6F
V4888
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POUT315
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-16SL-081 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES • ■ LOW INTERMODULATION DISTORTION HIGH GAIN IM3=-45dBc a t Po=31.5dBm GldB=8.0dB at 5.9GHz to 6.4GHz Single C arrier Level BROAD BAND INTERNALLY MATCHED
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-45dBc
TIM5964-16SL-081
2-16G1B)
POUT315
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Untitled
Abstract: No abstract text available
Text: FLM3742-25DA F, ¿¡U-,. r UJ11jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idB = 44dBm Typ. High Gain: G ^ b = 10.5dB (Typ.) High PAE: r iadd = 36% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 3.7 ~ 4.2GHz
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FLM3742-25DA
UJ11jU
44dBm
-45dBc
32dBm
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Untitled
Abstract: No abstract text available
Text: FLM1213-6F X, Ku-Band Internally Matched FET FEATURES • High Output Power: P ^ b = 37.5dBm Typ. • High Gain: G ^ b = 7.0dB (Typ.) • High PAE: r!add = 27% (Typ.) • Low IM3 = -45dBc@Po = 25dBm • Broad Band: 12.7 ~ 13.2GHz • Impedance Matched Zin/Zout = 50Q
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FLM1213-6F
-45dBc
25dBm
FLM1213-6F
FCSI0598M200
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Untitled
Abstract: No abstract text available
Text: FLM1213-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 40.5dBm Typ. High Gain: G ^ b = 5.5dB (Typ.) High PAE: r!add = 24% (Typ.) IM3 = -45dBc@Po = 28dBm Broad Band: 12.7 ~ 13.2GHz Impedance Matched Zin/Zout = 50Q
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FLM1213-12F
-45dBc
28dBm
FLM1213-12F
FCSI0598M200
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Untitled
Abstract: No abstract text available
Text: F, . FLM5964-18DA r UJ11 jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 42.5dBm Typ. High Gain: G ^ b = 8.5dB (Typ.) High PAE: r!add = 31% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 5.9 ~ 6.4GHz
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FLM5964-18DA
-45dBc
5964-18D
Drain-40
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5964-6D
Abstract: No abstract text available
Text: F, . FLM5964-6D r UJ11 jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 38.0dBm Typ. High Gain: G ^ b = 10.0ÒB (Typ.) High PAE: r!add = 36% (Typ.) Low IM3 = -45dBc@Po = 27dBm Broad Band: 5.9 ~ 6.4GHz
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FLM5964-6D
-45dBc
27dBm
5964-6D
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Untitled
Abstract: No abstract text available
Text: FLM5972-8F C-Band Internally Matched FET FEATURES • High Output Power: P ^ b = 39.0dBm Typ. • High Gain: G ^ b = 8.5dB (Typ.) • High PAE: riadd = 31% (Typ.) • Low IM3 = -45dBc@Po = 28.0dBm • Broad Band: 5.9 ~ 7.2GHz • Impedance Matched Zin/Zout = 50Q
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FLM5972-8F
-45dBc
FLM5972-8F
FCSI0599M200
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FLM5964
Abstract: No abstract text available
Text: n FLM5964-8D Internally Matched Power GaAs F E Ts . I FEATURES • High Output Power: P-idg = 39.0dBm Typ. • High Gain: G -j^B = 8.0dB (Typ.) • High PAE: r iadd = 30% (Typ.) • Low IM 3 = -45dBc@Po = 28dBm • Broad Band: 5.9 ~ 6.4GHz • Impedance Matched Zin/Zout = 50Q
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FLM5964-8D
-45dBc
28dBm
FLM5964-8D
FLM5964
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FLM5964-18DA
Abstract: 5964-18DA 5964-18D
Text: FLM5964-18DA F| if m - i • I Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 42.5dBm Typ. High Gain: G -j^B = 8.5dB (Typ.) High PAE: r iadd = 31% (Typ.) Low IM 3 = -45dBc@Po = 31.5dBm Broad Band: 5.9 ~ 6.4GHz
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FLM5964-18DA
-45dBc
5964-18D
FLM5964-18DA
5964-18DA
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Untitled
Abstract: No abstract text available
Text: F| .fjW-,. J FLM4450-4E Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 36dBm Typ. High Gain: G-j^B = 11dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q
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FLM4450-4E
36dBm
-45dBc
25dBm
4450-4E
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Untitled
Abstract: No abstract text available
Text: FLM6472-35DA F| r U J Il j U Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 45.5dBm Typ. High Gain: G-j^B = 6.0dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po = 34.5dBm Broad Band: 6.4 ~ 7.2GHz
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FLM6472-35DA
-45dBc
FLM6472-35DA
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FLM4450-25D
Abstract: FUJI GaAs FET 25Q 328 FLM4450-25DA
Text: n FLM4450-25DA Internally Matched Power GaAs F E Ts . I FEATURES • • • • • • • High Output Power: P-idg = 44dBm Typ. High Gain: G-j^B = 9.5dB (Typ.) High PAE: riadd = 35% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q
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FLM4450-25DA
44dBm
-45dBc
32dBm
FLM4450-25DA
FLM4450-25D
FUJI GaAs FET
25Q 328
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U/25/20/TN26/15/850/FLM6472-18DA
Abstract: No abstract text available
Text: FLM6472-18DA F| I Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 42.5dBm Typ. High Gain: G-j^B = 7.0dB (Typ.) High PAE: riadd = 30% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q
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FLM6472-18DA
-45dBc
FLM6472-18DA
VD-164
U/25/20/TN26/15/850/FLM6472-18DA
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FLM7177-18DA
Abstract: T-34038
Text: FLM7177-18DA Fuffrsu Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 42.5dBm Typ. High Gain: G-j^B = 7.5dB (Typ.) High PAE: r iadd = 30% (Typ.) Low IM3 = -45dBc@Po = 3 1 .5dBm Broad Band: 7.1 ~ 7.7GHz Impedance Matched Zin/Zout = 50Q
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FLM7177-18DA
-45dBc
FLM7177-18DA
Symbo474
T-34038
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