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    C54E5

    Abstract: No abstract text available
    Text: 123 456789ABCDEF58 123456278 29ABCDEFD  4C457457DC7  234C25DC4E4E    F569 ! 69 !  "5##52$  17E %4C3F5& '3 A48  7CD45*4DCCBC54B4F565  A7* 7#+C24 4 x × DC9F2F .6"!  ,+42C354#+4245234F5-"


    Original     		PDF 456789ABCDEF58 29ABCDEFD C54E5A6B C54E5

    667 ecb

    Abstract: verilog code for implementation of des verilog code for des tsmc sram
    Text: FIPS 46-3 Standard Compliant Encryption/Decryption performed in 48 cycles ECB mode DES3 Up to 168 bits of security Triple Data Encryption Standard Core Verilog IP Core The DES3 core implements the Triple Data Encryption Standard (DES3) documented in the U.S. Government publication FIPS 46-3.


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: W94AD6KB / W94AD2KB 1Gb Mobile LPDDR Table of Contents1. 2. 3. 4. 5. 6. 7. 8. GENERAL DESCRIPTION . 4 FEATURES . 4


    Original     		PDF W94AD6KB W94AD2KB A01-004

    A1833

    Abstract: No abstract text available
    Text: Advance‡ 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF – 32 Meg x 16 x 4 banks MT46H256M16L2 – 32 Meg x 16 x 4 banks x 2 MT46H64M32LF – 16 Meg x 32 x 4 banks MT46H128M32L2 – 16 Meg x 32 x 4 banks x 2 MT46H256M32L4 – 16 Meg x 32 x 4 banks x 4


    Original     		PDF MT46H128M16LF MT46H256M16L2 MT46H64M32LF MT46H128M32L2 MT46H256M32L4 09005aef83a73286 A1833

    Untitled

    Abstract: No abstract text available
    Text: July 2007 HYB18M256320CFX–7.5 HYE18M256320CFX–7.5 DRAMs for Mobile Applications 256-Mbit Mobile-RAM Data S heet Rev.1.03 Data Sheet HY[B/E]18M256320CFX–7.5 256-Mbit DDR Mobile-RAM HYB18M256320CFX–7.5, HYE18M256320CFX–7.5 Revision History: Rev.1.03, 2007-07


    Original     		PDF HYB18M256320CFX HYE18M256320CFX 256-Mbit 18M256320CFX

    MT46H64M16

    Abstract: 6S55 MT46H64M16LF
    Text: 1Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H64M16LF – 16 Meg x 16 x 4 Banks MT46H32M32LF – 8 Meg x 32 x 4 Banks Features Options • Vdd/Vddq – 1.8V/1.8V • Configuration – 64 Meg x 16 16 Meg x 16 x 4 banks – 32 Meg x 32 (8 Meg x 32 x 4 banks)


    Original     		PDF MT46H64M16LF MT46H32M32LF 09005aef82ce3074 MT46H64M16 6S55 MT46H64M16LF

    s11 stopping compound

    Abstract: DEF01
    Text: 128Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)


    Original     		PDF 128Mb: MT46H8M16LF MT46H4M32LF 138ns. 09005aef8331b3e9/Source: 09005aef8331b3ce s11 stopping compound DEF01

    Untitled

    Abstract: No abstract text available
    Text: Advance‡ 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H32M16LF– 8 Meg x 16 x 4 banks MT48H16M32LF – 4 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: http://www.micron.com/mobile Table 1: Features


    Original     		PDF 512Mb: MT48H32M16LF­ MT48H16M32LF 09005aef81ca5de4/Source: 09005aef81ca5e03 MT48H32M16LF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS05-11464-1E MEMORY Consumer FCRAMTM CMOS 512M Bit 4 bank x 2M word x 64 bit Consumer Applications Specific Memory for SiP MB81EDS516445 • DESCRIPTION The Fujitsu MB81EDS516445 is a CMOS Fast Cycle Random Access Memory (FCRAM*) with Low Power Double


    Original     		PDF DS05-11464-1E MB81EDS516445 MB81EDS516445 64-bit

    MT46H128M16

    Abstract: MT46H128M16LF MT46H64M32LF MT46H128 MT46H128M32L2 MT46H256M32 MT46H64M32 MT46H128M MT46H128M16L 240-ball
    Text: 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF – 32 Meg x 16 x 4 Banks MT46H64M32LF – 16 Meg x 32 x 4 Banks MT46H128M32L2 – 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 – 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4 - 32 Meg x 16 x 4 Banks x 4


    Original     		PDF MT46H128M16LF MT46H64M32LF MT46H128M32L2 MT46H256M32L4 MT46H256M32R4 09005aef8457b3eb MT46H128M16 MT46H128M16LF MT46H64M32LF MT46H128 MT46H128M32L2 MT46H256M32 MT46H64M32 MT46H128M MT46H128M16L 240-ball

    circuit diagram of ddr ram

    Abstract: HYB18M1G320BF
    Text: March 2007 HYB18M 1G 320 B F– 7 . 5 HYE18M 1G 320 B F– 7 . 5 DRAMs for Mobile Applications 1-Gbit x32 DDR Mobile-RAM RoHS compliant Data S heet Rev.1.00 Data Sheet HY[B/E]18M1G320BF 1-Gbit DDR Mobile-RAM HYB18M1G320BF–7.5, HYE18M1G320BF–7.5, Revision History: 2007-03, Rev.1.00


    Original     		PDF HYB18M HYE18M 18M1G320BF HYB18M1G320BF HYE18M1G320BF 02022006-J7N7-GYFP circuit diagram of ddr ram

    ELPIDA lpddr

    Abstract: 1GB-x16 samsung lpddr LPDDR2 SDRAM samsung MT46H64M16LF cross infineon power cycling
    Text: 1Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H64M16LF – 16 Meg x 16 x 4 banks MT46H32M32LF – 8 Meg x 32 x 4 banks Features Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 64 Meg x 16 16 Meg x 16 x 4 banks – 32 Meg x 32 (8 Meg x 32 x 4 banks)


    Original     		PDF MT46H64M16LF MT46H32M32LF 09005aef83d9bee4 ELPIDA lpddr 1GB-x16 samsung lpddr LPDDR2 SDRAM samsung MT46H64M16LF cross infineon power cycling

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11463-2E MEMORY Consumer FCRAMTM CMOS 512M Bit 4 bank x 2M word x 64 bit Consumer Applications Specific Memory for SiP MB81EDS516545 • DESCRIPTION The Fujitsu MB81EDS516545 is a CMOS Fast Cycle Random Access Memory (FCRAM*) with Low Power Double


    Original     		PDF DS05-11463-2E MB81EDS516545 MB81EDS516545 64-bit

    Untitled

    Abstract: No abstract text available
    Text: Preliminary‡ 128Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)


    Original     		PDF 128Mb: MT46H8M16LF MT46H4M32LF 09005aef8331b3e9 09005aef8331b3ce

    am29f date code markings

    Abstract: am29lv date code markings Am29BDD160GB64C
    Text: ADVANCED INFORMATION Am29BDD160G 16 Megabit 1 M x 16-bit/512 K x 32-Bit CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURE ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while


    Original     		PDF Am29BDD160G 16-bit/512 32-Bit) am29f date code markings am29lv date code markings Am29BDD160GB64C

    Untitled

    Abstract: No abstract text available
    Text: 512Mb: x16, x32 Automotive LPDDR SDRAM Features Automotive LPDDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF – 4 Meg x 32 x 4 banks MT46H16M32LG – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 32 Meg x 16 8 Meg x 16 x 4 banks


    Original     		PDF 512Mb: MT46H32M16LF MT46H16M32LF MT46H16M32LG 60-ball 90-ball 09005aef846e285e 512mb

    T67M

    Abstract: ELPIDA mobile dram LPDDR2
    Text: 512Mb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF – 4 Meg x 32 x 4 banks MT46H16M32LG – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 32 Meg x 16 8 Meg x 16 x 4 banks


    Original     		PDF 512Mb: MT46H32M16LF MT46H16M32LF MT46H16M32LG 09005aef83dd2b3e T67M ELPIDA mobile dram LPDDR2

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11463-2E MEMORY Consumer FCRAMTM CMOS 512M Bit 4 bank x 2M word x 64 bit Consumer Applications Specific Memory for SiP MB81EDS516545 • DESCRIPTION The Fujitsu MB81EDS516545 is a CMOS Fast Cycle Random Access Memory (FCRAM*) with Low Power Double


    Original     		PDF DS05-11463-2E MB81EDS516545 MB81EDS516545 64-bit

    verilog code for implementation of des

    Abstract: Data Encryption Standard DES
    Text: FIPS 46-3 Standard Compliant Encryption/Decryption performed in 48 cycles ECB mode DES3 Up to 168 bits of security Triple Data Encryption Standard Megafunction Verilog IP Megafunction The DES3 megafunction implements the Triple Data Encryption Standard (DES3) documented in the U.S. Government publication FIPS 46-3.


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance‡ 128Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)


    Original     		PDF 128Mb: MT46H8M16LF MT46H4M32LF 09005aef82ce3074/Source: 09005aef82ce20c9

    Untitled

    Abstract: No abstract text available
    Text: 512Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF – 4 Meg x 32 x 4 banks Features Options • • • • • VDD/VDDQ – 1.8V/1.8V – 1.8V/1.2V1 • Configuration – 32 Meg x 16 8 Meg x 16 x 4 banks


    Original     		PDF 512Mb: MT46H32M16LF MT46H16M32LF 09005aef82d5d305/Source: 09005aef82d5d2e7

    Untitled

    Abstract: No abstract text available
    Text: 512Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)


    Original     		PDF 512Mb: MT46H32M16LF MT46H16M32LF 09005aef82ce3074/Source: 09005aef82ce20c9

    MT46H32M16

    Abstract: No abstract text available
    Text: 512Mb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 Banks MT46H16M32LF – 4 Meg x 32 x 4 Banks Features • • • • • • • • • • • • • • • • • • • • Options • VDD/VDDQ


    Original     		PDF 512Mb: MT46H32M16LF MT46H16M32LF 09005aef82d5d305 MT46H32M16

    wfbga

    Abstract: 1GB-x16 152-Ball PoP MT46H64M16LF
    Text: 1Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H64M16LF – 16 Meg x 16 x 4 banks MT46H32M32LF – 8 Meg x 32 x 4 banks MT46H32M32LG – 8 Meg x 32 x 4 banks Features Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 64 Meg x 16 16 Meg x 16 x 4 banks


    Original     		PDF MT46H64M16LF MT46H32M32LF MT46H32M32LG 09005aef83d9bee4 wfbga 1GB-x16 152-Ball PoP MT46H64M16LF