TSOP40 Flash
Abstract: m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A
Text: MEMORY PRODUCTS SELECTOR GUIDE A C) NMOS UV EPROM, 5V Operation Size 16 Kb 32 Kb 64 Kb 128 Kb 256 Kb 512 Kb Ref M2716 M2732A M2764A M27128A M27256 M27512 Description 16 Kb x8), 350 - 450ns, NMOS 32 Kb (x8), 200 - 450ns, NMOS 64 Kb (x8), 180 - 450ns, NMOS
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M2716
M2732A
M2764A
M27128A
M27256
M27512
450ns,
TSOP40 Flash
m48z32y
M27V512
FDIP24W
M27128A
M2716
M27256
M2732A
M27512
M2764A
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FDIP24W
Abstract: M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040
Text: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV & OTP EPROM, 5V Operation Size References Description Package 16 Kb M2716 16 Kb x8 , 350 - 450ns, NMOS FDIP24W 32 Kb M2732A 32 Kb (x8), 200 - 450ns, NMOS FDIP24W M2764A 64 Kb (x8), 180 - 450ns, NMOS
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M2716
450ns,
FDIP24W
M2732A
M2764A
FDIP28W
M27C64A
FDIP24W
M27128A
M2716
M27256
M2732A
M27512
M2764A
M27C256B
M27C64A
M29F040
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B2716
Abstract: m2716 FDIP24W M271616
Text: M2716 16 Kbit 2Kb x 8 NMOS UV EPROM DATA BRIEFING 2048 x 8 ORGANIZATION 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ACCESS TIME: – M2716-1 is 350ns – M2716 is 450ns SINGLE 5V SUPPLY VOLTAGE STATIC-NO CLOCKS REQUIRED INPUTS and OUTPUTS TTL COMPATIBLE
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M2716
525mW
132mW
M2716-1
350ns
M2716
450ns
AI00784B
B2716
FDIP24W
M271616
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NTE2708
Abstract: 1702 eprom 1702 eprom programmer 74LS
Text: NTE2708 Integrated Circuit NMOS, 8K UV EPROM, 450ns Description: The NTE2708 is an ultra–violet light–erasable, electrically programmable read only memory. It has 8, 192 bits organized as 1024 words of 8–bit length. This device is fabricated using N–channel silicon–
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NTE2708
450ns
NTE2708
1702 eprom
1702 eprom programmer
74LS
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1N914
Abstract: FDIP24W M2716
Text: M2716 NMOS 16K 2K x 8 UV EPROM 2048 x 8 ORGANIZATION 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ACCESS TIME: – M2716-1 is 350ns – M2716 is 450ns SINGLE 5V SUPPLY VOLTAGE STATIC-NO CLOCKS REQUIRED INPUTS and OUTPUTS TTL COMPATIBLE DURING BOTH READ and PROGRAM
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M2716
525mW
132mW
M2716-1
350ns
M2716
450ns
FDIP24W
1N914
FDIP24W
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B2716
Abstract: FDIP24W M2716 m2716 dip M2716* eprom
Text: M2716 NMOS 16K 2K x 8 UV EPROM DATA BRIEFING 2048 x 8 ORGANIZATION 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ACCESS TIME: – M2716-1 is 350ns – M2716 is 450ns SINGLE 5V SUPPLY VOLTAGE STATIC-NO CLOCKS REQUIRED INPUTS and OUTPUTS TTL COMPATIBLE DURING BOTH READ and PROGRAM
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M2716
525mW
132mW
M2716-1
350ns
M2716
450ns
B2716
FDIP24W
m2716 dip
M2716* eprom
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AM2716
Abstract: circuit diagram of m2716 m2716 1N914 FDIP24W
Text: M2716 NMOS 16 Kbit 2Kb x 8 UV EPROM NOT FOR NEW DESIGN • 2048 x 8 ORGANIZATION ■ 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ■ ACCESS TIME: – M2716-1 is 350ns – M2716 is 450ns ■ SINGLE 5V SUPPLY VOLTAGE ■ STATIC-NO CLOCKS REQUIRED ■ INPUTS and OUTPUTS TTL COMPATIBLE
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M2716
525mW
132mW
M2716-1
350ns
M2716
450ns
FDIP24W
AM2716
circuit diagram of m2716
1N914
FDIP24W
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M111M
Abstract: 55115 256X8 515S5 Intel 2708 2308 rom intel 8308
Text: 2607-F,l,N FEATURES • • • • • • • • • • • • • PIN DESIGNATION Static operation—no clocks Access time: 450ns max Single 5V power supply T TL compatible inputs and outputs Power dissipation: 525mW Tri-state outputs Mask programmable chip select for easy
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450ns
525mW
24-pin
1024X4
M111M
55115
256X8
515S5
Intel 2708
2308 rom
intel 8308
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nec 2716 eprom
Abstract: 2364 eprom NEC 2732 pin diagram of ic 2764 pin diagram of ic 2732 2732 rom 2732 eprom Electronic Arrays 2732 memory chip ROM 2764
Text: NEC NMUS juPD2364 NEC Electronic U.S.A. Inc. Electronic A rrays Division READ ONLY MEMORY 8192 WORDS, 8 BITS/WORD FEATURES: GENERAL DESCRIPTION: • Three Fast Access Times -450nsec -350nsec -300nsec • All Inputs and Outputs TTL Compatible • Single +5V ± 10% Power Supply
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uPD2364
iPD2364
-450ns35PC
2364-30PC
450nsec
350nsec
300nsec
nec 2716 eprom
2364 eprom
NEC 2732
pin diagram of ic 2764
pin diagram of ic 2732
2732 rom
2732 eprom
Electronic Arrays
2732 memory chip
ROM 2764
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XL2804A-250
Abstract: XL2804A-300 XL2804A-350 XL2804A-450 XL2804A 16L06
Text: EXEL - XL2804A MICROELECTRONICS, INC. . 512 X 8 Electrically Erasable P R O M PIN CONFIGURATION FEATURES • Fast Read Access Times — 250ns, 300ns, 350ns, 450ns 24 Pin PDIP Type "P" Package J ■ 5 Volt-only Operation
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250ns,
300ns,
350ns,
450ns
100pF)
100pF
XL2804A
XL2804A-250
XL2804A-300
XL2804A-350
XL2804A-450
XL2804A
16L06
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CDP1823
Abstract: No abstract text available
Text: h a r r is Œ CDP1823 d^P1 S E M I C O N D U C T O R 128-Word X 8-Bit LSI Static RAM M arch 1 9 9 2 Features Description • Fast Access Time - Vqq = 5 V .450ns - VDO= 1 0 V .250ns
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CDP1823
128-Word
450ns
250ns
CDP1823,
CDP1823C
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m2716a
Abstract: No abstract text available
Text: £ ÿ j SGS-THOMSON D»i LI(gï[si(ô RiD(gl M2716 N M O S 16K (2K x 8) UV EPROM • 2048 x 8 ORGANIZATION ■ 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ■ ACCESS TIME: - M2716-1 is 350ns - M2716 is 450ns - SINGLE 5V SUPPLY VOLTAGE - STATIC-NO CLOCKS REQUIRED
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M2716
525mW
132mW
M2716-1
350ns
M2716
450ns
FDIP24W
m2716a
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R09128
Abstract: R09128B
Text: »I N i K A l IN S I K U M l N I R09128B/C/D PRELIMINARY INFORMATION 131,072 Bit Static Read Only Memory READ ONLY M EM O R Y I FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ 16,384 x 8 Organization Single + 5 Volt S upply 450ns Max Access Tim e: R09128B 300ns Max Access Time: R09128C
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R09128B/C/D
450ns
R09128B
300ns
R09128C
200ns
R09128D
R09128
R09128B
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2364
Abstract: A12CE SMM2364C pf051 SMM2364
Text: PF051-05 SMM2364C CMOS 64K-BIT MASK ROM •L o w Supply Current •A ccess Time 350ns/450ns #8,192 Words X 8 Bits Asynchronous • DESCRIPTION The SMM2364C is an 8,192 words X 8 bits asynchronous, static, mask programmable ROM on a monolithic CMOS chip and is characterized by fast access time and very low power dissipation. The nature "static”
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PF051-05
SMM2364C
64K-BIT
350ns/450ns
2364C
24-pin
2364
A12CE
pf051
SMM2364
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M2764F1
Abstract: sgs M2764 sgs M2764f1 EPROM 2764-25 m2764-4f1 EPROM M2764 2764-25 m2764 M2764-2F1 m2764 f1
Text: M2764 a s 64K 8 K x 8 UV ERASABLE PROM • FAST ACCESS TIME: 200ns 250ns 300ns 450ns M AX MAX MAX MAX M2764-2F1 M 2764F1/-25F1/F6 M 2764-3F1/-30F1 M 2764-4F1/-45F1/-4F6 • SINGLE + 5 V POWER SUPPLY • LOW STAND BY CUR RENT 40mA MAX • INPUTS AND O UTPU TS TTL COM PATIBLE
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M2764
200ns
M2764-2F1
250ns
M2764F1/-25F1/F6
300ns
M2764-3F1/-30F1
450ns
M2764-4F1/-45F1/-4F6
M2764HF1
M2764F1
sgs M2764
sgs M2764f1
EPROM 2764-25
m2764-4f1
EPROM M2764
2764-25
m2764
m2764 f1
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HM472114P-3
Abstract: 2114L HM-472114-3 HM472114-3 HM472114P3 HM472114-4 HM472114P-4
Text: H M 472114 -3 ,H M 4 7 2 1 14-4, H M 472114P-3,H M 472114P -4 1 0 2 4 -word X 4-bit Static Random Access Memory • Fast Access T im e . H M 4 7 2 1 14-3 300ns {max. HM 472114-3, HM 472114-4 H M 4 7 2 1 14-4 450ns m ax.)
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HM472114-3
HM472114-4,
HM472114P-3
HM472114P
1024-word
300ns
HM472114-4
450ns
200mW
2114L
HM-472114-3
HM472114P3
HM472114P-4
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Untitled
Abstract: No abstract text available
Text: XL2865A 8K X 8 Electrically Erasable PROM PIN CONFIGURATION FEATURES 28 Pin PDIP Type "P" Package • Fast Read Access Times — 250ns, 300ns, 350ns, 450ns , ■ 5 Volt-only Operation ■ Industrial Temperature Range Available XLE2865A ■ Fast Nonvolatile Write Cycle
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XL2865A
250ns,
300ns,
350ns,
450ns
XLE2865A)
200ns
XL2865A
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2864A
Abstract: No abstract text available
Text: eXe L MICROELECTRONICS noC A A XLZO O H A M k n l.f' 8K X 8 Electrically Erasable PROM FE A TU R ES • Fast Read A ccess Tim es — 250ns, 300ns, 350ns, 450ns ■ 5 V o lt-o nly O peratio n Including W rite ■ ■ ■ Industrial T em p e ra tu re R ange A vailab le
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250ns,
300ns,
350ns,
450ns
200ns
XL2864A
XL2864A
2864A
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SM2716
Abstract: No abstract text available
Text: Æ T S C S -T H O M S O N M2716 M W & i( O T K !]D ( g S NMOS 16K (2K x 8 UV EPROM • 2048 x 8 ORGANIZATION ■ 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ■ ACCESS TIME: - M2716-1 is 350ns - M2716 is 450ns ■ SINGLE 5V SUPPLY VOLTAGE ■ STATIC-NO CLOCKS REQUIRED
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M2716
525mW
132mW
M2716-1
350ns
M2716
450ns
SM2716
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Untitled
Abstract: No abstract text available
Text: rZ J SGS'THOMSON ^7 # E ülD »[llLll @ (M a(@ i M 2716 NMOS 16K (2Kx 8 UV EPROM • 2048x 8 ORGANIZATION ■ 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ■ ACCESS TIME: - M2716-1 is 350ns - M2716 is 450ns ■ SINGLE 5V SUPPLY VOLTAGE ■ STATIC-NO CLOCKS REQUIRED
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2048x
525mW
132mW
M2716-1
350ns
M2716
450ns
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MOSTEK MEMORY MK36000
Abstract: MK36000-4 MK36000 MOSTEK 36000 MK36000-5 8k mostek mk36 10PA2 mostek rom mk36000
Text: MOSTEK 64K-BIT READ-ONLY MEMORY M K36000 P/J/N -4/5 O M K 3 6 0 0 0 8 K x 8 O rganization— "E d g e A c tiva te d " * operation (C E) P/N M K 3 6 0 0 0 -4 M K 3 6 0 0 0 -5 Access 250n s 300ns Cycle 375ns 450ns □ Single + 5 V ± 1 0 % Power Su p p ly □
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64K-BIT
MK36000
MK36000-4
250ns
375ns
MK36000-5
300ns
450ns
MOSTEK MEMORY MK36000
MOSTEK 36000
8k mostek
mk36
10PA2
mostek rom mk36000
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2142-2
Abstract: No abstract text available
Text: in te ! 2142 1024 X 4 BIT STATIC RAM 2142-2 2142-3 2142 2142L3 2142L Max. Access Time ns 200 300 450 300 450 Max. Power Dissipation (mw) 525 525 525 370 370 High Density 20 Pin Package No Clock or Timing Strobe Required Access Time Selections From 200-450ns
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2142L3
2142L
200-450ns
4096-bit
VT/771/1
2142-2
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XCS50
Abstract: No abstract text available
Text: HARRIS SEMICOND SECTOR HARRIS SEMICONDUCTOR • M 3 Q 2 2 7 1 003101=1 1 H H A S - r - 4 g ,- 2 3 - 12. C D P C D P 1 1 8 8 2 2 3 3 C 128-Word x 8-Bit LSI Static RAM March 1992 Features Description • Fast Access Time . Vdd = 5 V . 450ns
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128-Word
P1823
P1823C
DP1823
bidirectiona600
CDP1823,
CDP1823C
XCS50
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Untitled
Abstract: No abstract text available
Text: MICROELECTRONICS XL2865A 8K X 8 Electrically Erasable PROM PIN CONFIGURATION FEATURES 28 Pin PDIP Type "P" Package • Fast Read Access Times — 250ns, 300ns, 350ns, 450ns 28 Pin CERDIP Type "C" Package ■v ^ r , ■ 5 Volt-only Operation — Including Write
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XL2865A
250ns,
300ns,
350ns,
450ns
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