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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: LH5116 FEATURES • 2,048 x 8 bit organization • Access time: 100 ns MAX. • Power consumption: Operating: 220 mW (MAX.) Standby: 5.5 nW (MAX.) CMOS 16K (2K x 8) Static RAM DESCRIPTION The LH5116 is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process	OCR Scan	PDF	LH5116 LH5116H: 24-pin, 600-mil 300-mil 450-mil, LH5116 24-PIN
10DC IR 3 PINS Abstract: No abstract text available Text: AT27C080 Features • • • • • • • • • Fast Read Access Time -100 ns Low Power CMOS Operation 100 ^A max. Standby 40 mA max. Active at 5 MHz JEDEC Standard Packages 32-Lead 600-mll PDIP and Cerdip 32-Lead 450-mll SOIC SOP 32-Lead TSOP 5V± 10% Supply	OCR Scan	PDF	AT27C080 32-Lead 600-mll 450-mll AT27C080 requiT27C080-12TI AT27C080-15DC 10DC IR 3 PINS
24512 Abstract: w24512 W24512S-65LL 24512A Text: W24512 finbond M 64K X 8 CMOS STATIC RAM GENERAL DESCRIPTION The W24512 is a slow speed, low power CMOS Static RAM organized as 65536*a bits that oparatês on a singlo 3 -volt power supply. Tffli device is manufactured using Winbòrtd’s high performance CMOS	OCR Scan	PDF	W24512 200mW 32-pin 450mll W24512 24512 W24512S-65LL 24512A
CXK58257bp Abstract: cxk58257bym CXK58257b Text: SONY CXK58257BTM/BYM/BP/BM - 5 5 L L /7 0 L L /1 0 L L 32768-word x 8-bit High Speed CMOS Static RAM Description The CXK58257BTM/BYM/BP/BM is 262,144 bits high speed CMOS static RAM organized as 32768words by 8 bits. A poiysilicon TFT cell technology realized extermely	OCR Scan	PDF	CXK58257BTM/BYM/BP/BM-55UU70LU10LL 32768-word CXK58257BTM/BYM/BP/BM 32768-words CXK58257BTM/BYM/BP/BM -55LL -70LL -10LL 100ns CXK58257bp cxk58257bym CXK58257b
Untitled Abstract: No abstract text available Text: MITSUBISHI LSIs M 5 M 5 1 0 0 8 A P ,F P ,V P ,R V -5 5 L ,-5 5 L L 1048576-BIT 131072-WORD BY 8-BIT CM0S STATIC RAM DESCRIPTION The M5M51008AP,FP.VP.RV are a 1048576- b it CMOS static RAM organized as 131072 word by 8 -b it which are fabricated using high-performance triple polysilicon CMOS	OCR Scan	PDF	1048576-BIT 131072-WORD M5M51008AP M5M51008AVP. M5M51008AVP RV-55L -55LL 131Q72-WORD
Untitled Abstract: No abstract text available Text: ADE-203-492 Z HM6264BI Series 8,192-word x 8-bit High Speed CMOS Static RAM HITACHI T h e H itach i H M 6 2 6 4 B I is 6 4 k -b it sta tic R A M o rg a n iz e d 8 -k w o rd x 8 -b it. It re a liz e s h ig h er perform ance and low pow er consum ption by 1.5	OCR Scan	PDF	ADE-203-492 HM6264BI 192-word HM6264BLPI-10 HM6264BLPI-12 HM6264BLFPI-10T HM6264BLFPI-12T 600-mil 28-pin DP-28)