MCP3909 application note
Abstract: PIC18 example codes Spi slave PIC18 example C18 codes ADC TM162JCAWG1 hOW TO READ mcp3909 Explorer-16 PIC18 external interrupt example codes PIC18 example codes SPI master mini project using PIC microcontroller with sources code LCD control using dsPIC33
Text: MCP3909 ADC Evaluation Board for 16-Bit MCUs User’s Guide 2008 Microchip Technology Inc. DS51777A Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.
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MCP3909
16-Bit
DS51777A
DS51777A-page
MCP3909 application note
PIC18 example codes Spi slave
PIC18 example C18 codes ADC
TM162JCAWG1
hOW TO READ mcp3909
Explorer-16
PIC18 external interrupt example codes
PIC18 example codes SPI master
mini project using PIC microcontroller with sources code
LCD control using dsPIC33
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MR27T802F
Abstract: No abstract text available
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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MR27V802F
Abstract: No abstract text available
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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Untitled
Abstract: No abstract text available
Text: CY14B104K, CY14B104M 4-Mbit 512 K x 8/256 K × 16 nvSRAM with Real Time Clock 4-Mbit (512 K × 8/256 K × 16) nvSRAM with Real Time Clock Features • 25 ns and 45 ns access times ■ Internally organized as 512 K × 8 (CY14B104K) or 256 K × 16 (CY14B104M)
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CY14B104K,
CY14B104M
44-pin
54-pin
CY14B104K)
CY14B104M)
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16202
Abstract: HY23V16202 HY23V16202D HY23V16202S HY23V16202T 48TSOP
Text: 1MX16/2MX8 BIT CMOS MASK ROM HY23V16202 Description The HY23V16202 high performance read only memory is organized either as 2,097,152 x 8 bit byte mode or as 1,048,576 x 16 bit(word mode) followed by BHE mode select. The low power feature allows the battery
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1MX16/2MX8
HY23V16202
HY23V16202
42pin
100/120ns
44TSOP-II
16202
HY23V16202D
HY23V16202S
HY23V16202T
48TSOP
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CY62157CV25
Abstract: CY62157CV30 CY62157CV33 CY62157DV30 CY62157DV30L CY62157DV30LL
Text: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL® Static RAM Functional Description[1] Features • Temperature Ranges The CY62157DV30 is a high-performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra-low active current.
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CY62157DV30
I/O15)
45-ns
70-ns
CY62157CV25
CY62157CV30
CY62157CV33
CY62157DV30L
CY62157DV30LL
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Abstract: No abstract text available
Text: PRELIMINARY CY14B104K, CY14B104M 4 Mbit 512K x 8/256K x 16 nvSRAM with Real Time Clock Features • Watchdog timer ■ 20 ns, 25 ns, and 45 ns access times ■ Clock alarm with programmable interrupts ■ Internally organized as 512K x 8 (CY14B104K) or 256K x 16
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CY14B104K,
CY14B104M
8/256K
CY14B104K)
CY14B104M)
54-pin
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CY7C1049CV33-12VXI
Abstract: CY7C1049CV33-15ZXI CY7C1049CV33-15VXI CY7C1049CV33-12ZXC CY7C1049CV33 CY7C1049CV33-10VC CY7C1049CV33-10VI CY7C1049CV33-10ZC CY7C1049CV33-10ZI CY7C1049CV33-12VC
Text: CY7C1049CV33 4-Mbit 512K x 8 Static RAM Functional Description[1] Features • Temperature Ranges The CY7C1049CV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an
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CY7C1049CV33
CY7C1049CV33
-20-ns
CY7C1049CV33-15ZSXE
CY7C1049CV33-12VXI
CY7C1049CV33-15ZXI
CY7C1049CV33-15VXI
CY7C1049CV33-12ZXC
CY7C1049CV33-10VC
CY7C1049CV33-10VI
CY7C1049CV33-10ZC
CY7C1049CV33-10ZI
CY7C1049CV33-12VC
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CY7C1049CV33-10ZXC
Abstract: No abstract text available
Text: CY7C1049CV33 4-Mbit 512K X 8 Static RAM Features Functional Description • Temperature ranges ❐ Commercial: 0°C to 70°C ❐ Industrial/Automotive -A: –40°C to 85°C ❐ Automotive-E: –40°C to 125°C The CY7C1049CV33 is a high performance CMOS Static RAM
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CY7C1049CV33
CY7C1049CV33
CY7C1049CV33-10ZXC
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CY14B104KA, CY14B104MA 4 Mbit 512K x 8/256K x 16 nvSRAM with Real-Time-Clock Features • Watchdog timer ■ 20 ns, 25 ns, and 45 ns access times ■ Clock alarm with programmable interrupts ■ Internally organized as 512K x 8 (CY14B104KA) or 256K x 16
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CY14B104KA,
CY14B104MA
8/256K
54-pin
CY14B104KA)
CY14B104MA)
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CY14E104N
Abstract: No abstract text available
Text: PRELIMINARY CY14E104L/CY14E104N 4 Mbit 512K x 8/256K x 16 nvSRAM Features Functional Description • 15 ns, 25 ns, and 45 ns access times ■ Internally organized as 512K x 8 (CY14E104L) or 256K x 16 (CY14E104N) ■ Hands off automatic STORE on power down with only a small
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CY14E104L/CY14E104N
8/256K
CY14E104L/CY14E104N
CY14E104N
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SRAM 54-PIN TSOP
Abstract: No abstract text available
Text: PRELIMINARY CY14B104L/CY14B104N 4-Mbit 512K x 8/256K x 16 nvSRAM Features Functional Description • 15 ns and 25 ns access times • Internally organized as 512K x 8 or 256K x 16 • Hands-off automatic STORE on power down with only a small capacitor • STORE to QuantumTrap nonvolatile elements is initiated
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CY14B104L/CY14B104N
8/256K
CY14B104L/CY14B104N
to10ns
to15ns
SRAM 54-PIN TSOP
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usb flash drive circuit diagram sandisk
Abstract: research paper on wireless usb 3.0 vhdl code for ECC encryption SAMSUNG NAND FLASH TRANSLATION LAYER FTL SAMSUNG NAND FLASH TRANSLATION LAYER suyin camera SUYIN Connector usb USB, Card Reader Audio player circuit sandisk mmc 16MB Micron 32MB NOR FLASH
Text: SmartMedia White Paper Technology and Market Forecast January, 2000 For more information Young Ju KANG Email : JUDY@sec.samsung.com SmartMedia™ White Paper 2000 (c) Samsung Electronics Co.Ltd. I.
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15-micron
256Mb
512Mb
usb flash drive circuit diagram sandisk
research paper on wireless usb 3.0
vhdl code for ECC encryption
SAMSUNG NAND FLASH TRANSLATION LAYER FTL
SAMSUNG NAND FLASH TRANSLATION LAYER
suyin camera
SUYIN Connector usb
USB, Card Reader Audio player circuit
sandisk mmc 16MB
Micron 32MB NOR FLASH
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Untitled
Abstract: No abstract text available
Text: CY14B104K, CY14B104M 4-Mbit 512 K x 8/256 K × 16 nvSRAM with Real Time Clock 4-Mbit (512 K × 8/256 K × 16) nvSRAM with Real Time Clock Features • Watchdog timer ■ 25 ns and 45 ns access times ■ Clock alarm with programmable interrupts ■ Internally organized as 512 K × 8 (CY14B104K) or 256 K × 16
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CY14B104K,
CY14B104M
CY14B104K)
CY14B104M)
44-pin
54-pin
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MR27T802F
Abstract: No abstract text available
Text: FEDR27T802F-002-06 Issue Date: Oct. 01, 2008 MR27T802F 512k–Word x 16–Bit or 1M–Word × 8–Bit P2ROM FEATURES PIN CONFIGURATION TOP VIEW • 512k-word × 16-bit / 1M-word × 8-bit electrically switchable configuration · +2.7 V to 3.6 V power supply
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FEDR27T802F-002-06
MR27T802F
512k-word
16-bit
MR27T802F-xxxTN
48-pin
48-P-1220-0
50-1K)
MR27T802F-xxxMA
44-pin
MR27T802F
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CY14E104K/CY14E104M 4-Mbit 512K x 8 / 256K x 16 nvSRAM with Real-Time-Clock Features • 15 ns, 25 ns, and 45 ns access times ■ Internally organized as 512K x 8 (CY14E104K) or 256K x 16 (CY14E104M) ■ Hands off automatic STORE on power down with only a small
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CY14E104K/CY14E104M
CY14E104K)
CY14E104M)
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Untitled
Abstract: No abstract text available
Text: CY14B104K, CY14B104M 4-Mbit 512 K x 8/256 K × 16 nvSRAM with Real Time Clock Features • Watchdog timer ■ 25 ns and 45 ns access times ■ Clock alarm with programmable interrupts ■ Internally organized as 512 K × 8 (CY14B104K) or 256 K × 16 (CY14B104M)
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CY14B104K,
CY14B104M
CY14B104K)
CY14B104M)
44-pin
54-pin
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Untitled
Abstract: No abstract text available
Text: CY14B104K, CY14B104M 4-Mbit 512 K x 8/256 K × 16 nvSRAM with Real Time Clock 4-Mbit (512 K × 8/256 K × 16) nvSRAM with Real Time Clock Features • 25 ns and 45 ns access times ■ Internally organized as 512 K × 8 (CY14B104K) or 256 K × 16 (CY14B104M)
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CY14B104K,
CY14B104M
44-pin
54-pin
CY14B104K)
CY14B104M)
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Untitled
Abstract: No abstract text available
Text: CY7C1049CV33 4-Mbit 512K X 8 Static RAM Features Functional Description n Temperature ranges p Commercial: 0°C to 70°C p Industrial/Automotive -A: –40°C to 85°C p Automotive-E: –40°C to 125°C The CY7C1049CV33 is a high performance CMOS Static RAM
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CY7C1049CV33
CY7C1049CV33
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TSOP II 54
Abstract: TSOP 48 thermal resistance junction to case TSOP 48 thermal resistance TSOP 54 thermal resistance
Text: PRELIMINARY CY14B104L, CY14B104N 4 Mbit 512K x 8/256K x 16 nvSRAM Features Functional Description • 15 ns, 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 512K x 8 (CY14B104L) or 256K x 16 (CY14B104N) ■ Hands off automatic STORE on power down with only a small
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CY14B104L,
CY14B104N
8/256K
CY14B104L/CY14B104N
TSOP II 54
TSOP 48 thermal resistance junction to case
TSOP 48 thermal resistance
TSOP 54 thermal resistance
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Untitled
Abstract: No abstract text available
Text: 4MX16/8MX8 BIT CMOS MASK ROM HY23V64200 Description The HY23V64200 high per formance read onl y m em or y i s or gani z ed ei th er a s 8,38 8,608 x 8bi t byte mode or as 4,194,304 x16 bit(word mode) and has an access time of 100/120ns. It needs no external
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4MX16/8MX8
HY23V64200
HY23V64200
100/120ns.
44SOP,
44TSOP-II
48TSOP-I
44TSOP-II
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Arduino Mega2560
Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM
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CY8C38
CY8C29
incl795
12T9797
12T9804
12T9803
12T9800
12T9802
12T9801
12T9805
Arduino Mega2560
13001 S 6D TRANSISTOR
arduino uno rev 3
agilent optical encoder 9988
MZ 13001 TRANSISTOR
arduino mega 2650
skiip 613 gb 123 ct
arduino sound sensor module pic
arduino nano
mc34063l
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY GM76FV16256/ GM76FU16256/ GM76FS16256 GM76FR16256 262 , 144w o r d s x 16 b it CMOS STATIC RAM LG S e m i c o n C o .,L t d . Description Features The G M 76FV 16256/ G M 76FU 16256/ G M 76FS16256/ •Power Supply V oltage G M 76FR 16256 is a 4,194,304 bits static random access
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GM76FV16256/
GM76FU16256/
GM76FS16256
GM76FR16256
76FS16256/
GM76FV16256
GM76FU16256
GM76FR162tf6
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