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    2SK619

    Abstract: J10V diode gate
    Text: 2SK 619 blE D 44TbE0S 0013103 bib • HITH HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET it rT HIGH FREQUENCY HIGH IMPEDANCE AMPLIFIER ì h ■ FEATURES • • High Voltage (VDSS - 70 V) Effective to Suppress Signal Radiation Connected Source to Heat Sink


    OCR Scan     		PDF 2SK619 44TbE0S Q0131 441b205 DQ131GS 2SK619 J10V diode gate

    LB205

    Abstract: HD61830B LM211XB GG12S
    Text: HITACHI/ OPTOELECTRONICS LIE D • 4 4 ^ 2 0 5 GG12SÔ3 blS BiHITM 57 IT A C H I LM211XB/LM211XF ■ 480 dot (W) x 64 dot (H) graphic and aplhanumeric display ■ Controller HD61830B Power supply for LCD drive (Recommended) (V DD - V q ) Duty = 1/64 Ta = 0 C


    OCR Scan     		PDF GG12S LM211XB/LM211XF HD61830B LM21XB LM211XF lb205 1000ns. HD61830B LM211XB