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    44N80P Search Results

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    44N80P Price and Stock

    Littelfuse Inc IXFK44N80P

    MOSFET N-CH 800V 44A TO264AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFK44N80P Tube 516 1
    • 1 $19.82
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    RS IXFK44N80P Bulk 8 Weeks 25
    • 1 -
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    • 100 $20.12
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    Littelfuse Inc IXFX44N80P

    MOSFET N-CH 800V 44A PLUS247-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFX44N80P Tube 300 1
    • 1 $22.29
    • 10 $22.29
    • 100 $14.139
    • 1000 $22.29
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    Newark IXFX44N80P Bulk 300
    • 1 -
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    • 1000 $13.6
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    Littelfuse Inc IXFN44N80P

    MOSFET N-CH 800V 39A SOT-227B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFN44N80P Tube 244 1
    • 1 $21.53
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    RS IXFN44N80P Bulk 8 Weeks 10
    • 1 -
    • 10 $33.31
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    Littelfuse Inc IXFR44N80P

    MOSFET N-CH 800V 25A ISOPLUS247
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    DigiKey IXFR44N80P Tube 240 1
    • 1 $20.95
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    • 100 $13.97333
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    Newark IXFR44N80P Bulk 300
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    RS IXFR44N80P Bulk 8 Weeks 30
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    • 100 $21.56
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    IXYS Corporation IXFX44N80P

    MOSFETs 44 Amps 800V
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    Mouser Electronics IXFX44N80P 682
    • 1 $19.71
    • 10 $16.19
    • 100 $15.22
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    Bristol Electronics IXFX44N80P 30
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    TTI IXFX44N80P Tube 300
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    TME IXFX44N80P 1
    • 1 $21.93
    • 10 $17.36
    • 100 $15.59
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    44N80P Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IXFX 44N80P

    Abstract: 44N80P ixfk44n80p IXFX44N80P 44N80 PLUS247 44n8
    Text: PolarHVTM HiPerFET Power MOSFET IXFK 44N80P IXFX 44N80P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V


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    44N80P IXFX 44N80P 44N80P ixfk44n80p IXFX44N80P 44N80 PLUS247 44n8 PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET IXFN 44N80P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V V VGS VGSM Continuous


    Original
    44N80P PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET IXFK 44N80P IXFX 44N80P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V


    Original
    44N80P PDF

    44N80

    Abstract: 44N80P "SOT-227 B" dimensions
    Text: PolarHVTM HiPerFET Power MOSFET IXFN 44N80P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V V VGS VGSM Continuous


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    44N80P 44N80 44N80P "SOT-227 B" dimensions PDF

    IXFX 44N80P

    Abstract: 44n8 max2743 IXFK44N80P
    Text: PolarHVTM HiPerFET Power MOSFET IXFK 44N80P IXFX 44N80P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 800 800


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    44N80P 44N80P O-264 PLUS247 IXFX 44N80P 44n8 max2743 IXFK44N80P PDF

    44N80P

    Abstract: ISOPLUS247
    Text: PolarHVTM HiPerFET Power MOSFET IXFR 44N80P VDSS ID25 RDS on Electrically Isolated Tab trr = 800 V = 25 A Ω ≤ 200 mΩ ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original
    44N80P 44N80P ISOPLUS247 PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET IXFK 44N80P IXFX 44N80P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V


    Original
    44N80P PDF

    44N80

    Abstract: HiperFET 44N80P ISOPLUS247
    Text: PolarHVTM HiPerFET Power MOSFET IXFR 44N80P VDSS ID25 RDS on Electrically Isolated Tab trr = 800 V = 25 A Ω ≤ 190 mΩ ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original
    44N80P 44N80 HiperFET 44N80P ISOPLUS247 PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET IXFR 44N80P VDSS ID25 RDS on Electrically Isolated Tab trr = 800 V = 25 A Ω ≤ 200 mΩ ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original
    44N80P PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


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    MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF