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    44DBM Price and Stock

    Bimba Manufacturing Company LT-044-DBM

    Cylinder, O.L., With Magnet ; 3/4In Bore; Stroke: 4In; Dbl Act/FN Mt, Bump | Bimba LT-044-DBM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS LT-044-DBM Bulk 5 Weeks 1
    • 1 $68.4
    • 10 $68.4
    • 100 $68.4
    • 1000 $68.4
    • 10000 $68.4
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    Bimba Manufacturing Company LT-044-DBMQ

    Thruster, Linear Thruster Cylinder ; 3/4in Bore ; Stroke: 4 in; Double Acting ; | Bimba LT-044-DBMQ
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS LT-044-DBMQ Bulk 5 Weeks 1
    • 1 $68.4
    • 10 $68.4
    • 100 $68.4
    • 1000 $68.4
    • 10000 $68.4
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    Bimba Manufacturing Company LT-1744-DBM

    Thruster, Linear Thruster Cylinder ; 1-1/2in Bore ; Stroke: 44 in; Double Actin | Bimba LT-1744-DBM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS LT-1744-DBM Bulk 5 Weeks 1
    • 1 $304.6
    • 10 $304.6
    • 100 $304.6
    • 1000 $304.6
    • 10000 $304.6
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    Bimba Manufacturing Company LT-044-DBMT1

    Thruster, Linear Thruster Cylinder ; 3/4in Bore ; Stroke: 4 in; Double Acting ; | Bimba LT-044-DBMT1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS LT-044-DBMT1 Bulk 5 Weeks 1
    • 1 $73.56
    • 10 $73.56
    • 100 $73.56
    • 1000 $73.56
    • 10000 $73.56
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    Bimba Manufacturing Company LT-314.4-DBM

    Thruster, Linear Thruster Cylinder ; 2in Bore ; Stroke: 4.4 in; Double Acting ; | Bimba LT-314.4-DBM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS LT-314.4-DBM Bulk 5 Weeks 1
    • 1 $160.66
    • 10 $160.66
    • 100 $160.66
    • 1000 $160.66
    • 10000 $160.66
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    Find more 44DBM price and stock on Findchips.com

    44DBM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: RFPA1012 RFPA1012 GaAs HBT 400MHz to 2700MHz Power Amplifier GaAs HBT 400MHz TO 2700MHz POWER AMPLIFIER Package Style: DFN, 8-Pin, 2mm x 2mm Features High Linearity: OIP3 = 44dBm at 900MHz  Low Noise: NF = 3.5dB at 900MHz  Low DC Power: 5V, 90mA 


    Original     		PDF RFPA1012 400MHz 2700MHz 44dBm 900MHz

    lmh6881

    Abstract: ADC12D1800rf mixer ADC12D1800RF L6881
    Text: LMH6881 DC to 2.4GHz, High Linearity, Programmable Differential Amplifier General Description The LMH6881 is a high-speed, high-performance, programmable differential amplifier. With a bandwidth of 2.4GHz and high linearity of 44dBm OIP3, the LMH6881 is suitable for


    Original     		PDF LMH6881 LMH6881 44dBm 24-Pin SQA24A ADC12D1800rf mixer ADC12D1800RF L6881

    FLM0910-25F

    Abstract: 103-61 s-parameter s11 s12 s21 10000 ED-4701 9.5-10.5GHz
    Text: FLM0910-25F X-Band Internally Matched FET FEATURES ・High Output Power: P1dB=44dBm Typ. ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=30%(Typ.) ・Broad Band: 9.5～10.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION


    Original     		PDF FLM0910-25F 44dBm FLM0910-25F 103-61 s-parameter s11 s12 s21 10000 ED-4701 9.5-10.5GHz

    L6881SQ

    Abstract: No abstract text available
    Text: LMH6881 www.ti.com SNOSC72D – JUNE 2012 – REVISED NOVEMBER 2012 LMH6881 DC to 2.4GHz, High Linearity, Programmable Differential Amplifier Check for Samples: LMH6881 FEATURES 1 • • • • • • • • • 23 Small Signal Bandwidth: 2400MHz OIP3 @ 100 MHz: 44dBm


    Original     		PDF LMH6881 SNOSC72D LMH6881 2400MHz 44dBm -100dBc L6881SQ

    Untitled

    Abstract: No abstract text available
    Text: LMH6881 DC to 2.4GHz, High Linearity, Programmable Differential Amplifier General Description The LMH6881 is a high-speed, high-performance, programmable differential amplifier. With a bandwidth of 2.4GHz and high linearity of 44dBm OIP3, the LMH6881 is suitable for


    Original     		PDF LMH6881 LMH6881 44dBm

    9.5-10.5GHz

    Abstract: No abstract text available
    Text: FLM0910-25F X, Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=44dBm Typ. ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd =30%(Typ.) ・Broad Band: 9.5～10.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION


    Original     		PDF FLM0910-25F 44dBm FLM0910-25F FCSI0202M200 9.5-10.5GHz

    ED-4701

    Abstract: FLM0910-25F
    Text: FLM0910-25F X-Band Internally Matched FET FEATURES ・High Output Power: P1dB=44dBm Typ. ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=30%(Typ.) ・Broad Band: 9.5～10.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION


    Original     		PDF FLM0910-25F 44dBm FLM0910-25F ED-4701

    16 pin 4x4 amplifier gsm

    Abstract: mch185C102kk MCH185A100DK ECJ-1VF1A105Z
    Text: PRELIMINARY DATA SHEET ECP052 0.5 WATT POWER AMPLIFIER Features Applications 0.8GHz to 1GHz 28.0dBm P1dB High Linearity: 44dBm OIP3 High Efficiency: PAE > 50% 17dB Linear Gain High Reliability Class A or AB operation Basestations and Repeaters CDMA/GSM/TDMA/EDGE


    Original     		PDF ECP052 44dBm QFN-16 ECP052 ECP052G ECP052G-500 ECP052G-1000 ECP052D ECP052D-500 ECP052D-1000 16 pin 4x4 amplifier gsm mch185C102kk MCH185A100DK ECJ-1VF1A105Z

    9.5-10.5GHz

    Abstract: No abstract text available
    Text: FLM0910-25F X-Band Internally Matched FET FEATURES ・High Output Power: P1dB=44dBm Typ. ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=30%(Typ.) ・Broad Band: 9.5～10.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION


    Original     		PDF FLM0910-25F 44dBm FLM0910-25F 9.5-10.5GHz

    EGN28B400M1B-R

    Abstract: JESD22-A114 Sumitomo 1076
    Text: EGN28B400M1B-R High Voltage - High Power GaN-HEMT for Radar FEATURES •High Voltage Operation : VDS=50V •High Power : 400W min. @ Pin=25W (44dBm) •High Efficiency: 50%(typ.) @ Pin=25W (44dBm) DESCRIPTION Sumitomo GaN-HEMT EGN28B400M1B-R offers high power, high


    Original     		PDF EGN28B400M1B-R 44dBm) EGN28B400M1B-R JESD22-A114 Sumitomo 1076

    TOSHIBA HEMT

    Abstract: TGI7785-120L
    Text: MICROWAVE POWER GaN HEMT TGI7785-120L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER Pout=51.0dBm at Pin=44.0dBm „ HIGH GAIN GL=11.0dB at Pin=20.0dBm „ BROAD BAND INTERNALLY MATCHED HEMT HERMETICALLY SEALED PACKAGE „ LOW INTERMODULATION DISTORTION


    Original     		PDF TGI7785-120L -25dBc 44dBm 20dBm 7-AA06A) TOSHIBA HEMT TGI7785-120L

    Untitled

    Abstract: No abstract text available
    Text: OPA 693 OPA6 93 OPA693 SBOS285 – OCTOBER 2003 Ultra-Wideband, Fixed Gain Video BUFFER AMPLIFIER with Disable FEATURES DESCRIPTION ● VERY HIGH BANDWIDTH G = +2 : 700MHz ● FLEXIBLE SUPPLY RANGE: +5V to +12V Single Supply ±2.5V to ±6V Dual Supplies ● INTERNALLY FIXED GAIN: +2 or ±1


    Original     		PDF OPA693 SBOS285 700MHz 120mA OT23-6 OPA693 2500Vstruments

    47DBM

    Abstract: No abstract text available
    Text: News Release ⎜ www.linear.com 50Ohm IF Gain Block Provides 47dBm OIP3, 15.5dB Gain Consumes only 450mW MILPITAS, CA – September 18, 2012 – Linear Technology announces the LTC6431-15, a 15.5dB gain block that achieves high dynamic range in a 50Ohm environment from 20MHz to


    Original     		PDF 50Ohm 47dBm 450mW LTC6431-15, 20MHz 240MHz, 44dBm. 450mW.

    Untitled

    Abstract: No abstract text available
    Text: R3005300L R3005300L 30dB Reverse Hybrid 5MHz to 300MHz Low Current Package: SOT-115J The R3005300L is a hybrid reverse amplifier. The part employs a silicon die. It has extremely low distortion and superior return loss performance. The part also provides


    Original     		PDF R3005300L 300MHz OT-115J R3005300L 300MHz 160mA 24VDC

    QFN24

    Abstract: WCDMA* antenna WCDMA1700 NJG1658K34
    Text: NJG1658K34 DP7T ANTENNA SWITCH GaAs MMIC Q GENERAL DESCRIPTION NJG1658K34 is a GaAs DP7T antenna switch IC designed for WCDMA/GSM multimode handsets. This switch can be operated by six bits control signal from 1.3V of logic high voltage. This switch features low insertion loss and low distortion. Also, the ESD


    Original     		PDF NJG1658K34 NJG1658K34 QFN24-34 WCDMA800 WCDMA1700/1500 WCDMA2000 GSM850/900 GSM1800/1900 QFN24 WCDMA* antenna WCDMA1700

    Untitled

    Abstract: No abstract text available
    Text: OPA 693 OPA6 93 OPA693 SBOS285 – OCTOBER 2003 Ultra-Wideband, Fixed Gain Video BUFFER AMPLIFIER with Disable FEATURES DESCRIPTION ● VERY HIGH BANDWIDTH G = +2 : 700MHz ● FLEXIBLE SUPPLY RANGE: +5V to +12V Single Supply ±2.5V to ±6V Dual Supplies ● INTERNALLY FIXED GAIN: +2 or ±1


    Original     		PDF OPA693 SBOS285 700MHz 120mA OT23-6 OPA693

    Untitled

    Abstract: No abstract text available
    Text: FLM3742-25DA F, ¿¡U-,. r UJ11jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idB = 44dBm Typ. High Gain: G ^ b = 10.5dB (Typ.) High PAE: r iadd = 36% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 3.7 ~ 4.2GHz


    OCR Scan     		PDF FLM3742-25DA UJ11jU 44dBm -45dBc 32dBm

    FLM4450-25D

    Abstract: FUJI GaAs FET 25Q 328 FLM4450-25DA
    Text: n FLM4450-25DA Internally Matched Power GaAs F E Ts . I FEATURES • • • • • • • High Output Power: P-idg = 44dBm Typ. High Gain: G-j^B = 9.5dB (Typ.) High PAE: riadd = 35% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		PDF FLM4450-25DA 44dBm -45dBc 32dBm FLM4450-25DA FLM4450-25D FUJI GaAs FET 25Q 328

    Untitled

    Abstract: No abstract text available
    Text: FLM5964-25DA r UJ11bU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 44dBm Typ. High Gain: G ^ b = 8.5dB (Typ.) High PAE: r iadd = 33% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		PDF FLM5964-25DA UJ11bU 44dBm -45dBc 32dBm 5964-25D

    FLM3742-25DA

    Abstract: No abstract text available
    Text: F|J ,. FLM3742-25DA Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 44dBm Typ. High Gain: G -j^B = 10.5dB (Typ.) High PAE: r iadd = 36% (Typ.) Low IM 3 = -45dBc@Po = 32dBm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		PDF FLM3742-25DA 44dBm -45dBc 32dBm FLM3742-25DA

    FLM4450-25DA

    Abstract: FLM4450-25D
    Text: F, . FLM4450-25DA r UJ11 j U Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 44dBm Typ. High Gain: G ^ b = 9.5dB (Typ.) High PAE: r!add = 35% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		PDF FLM4450-25DA 44dBm -45dBc 32dBm FLM4450-25DA FLM4450-25D

    FLM5964-25DA

    Abstract: CS 5800
    Text: lîrTCI FLM5964-25DA r UJI1bU Internally Matched Power GaAs F E Ts FEATURES • • • • • • • High Output Power: P-idg = 44dBm Typ. High Gain: G -j^B = 8.5dB (Typ.) High PAE: r iadd = 33% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 5.9 ~ 6.4GHz


    OCR Scan     		PDF FLM5964-25DA 44dBm -45dBc 32dBm FLM5964-25DA CS 5800

    FLM6472-25D

    Abstract: No abstract text available
    Text: F|.9J^., FLM6472-25DA Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 44dBm Typ. High Gain: G-j^B = 7.0dB (Typ.) High PAE: riadd = 32% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		PDF FLM6472-25DA 44dBm -45dBc 32dBm Te298 FLM6472-25D

    FLM6472-25DA

    Abstract: No abstract text available
    Text: F| .ÇjU-, FLM6472-25DA Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 44dBm Typ.) High Gain: G ^ b = 7.0dB (Typ.) High PAE: riadd = 32% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		PDF FLM6472-25DA 44dBm -45dBc 32dBm Vo119 FLM6472-25DA