Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b4E T> • 7=ib4mE 001331G 3SS ■ S M G K 44C1002A CMOS DRAM 1M X4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM 44C1002A Is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random Access Memory.
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001331G
KM44C1002A
44C1002A
44C1002A-
130ns
150ns
002A-10
180ns
G013327
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Untitled
Abstract: No abstract text available
Text: 44C1002A CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 4 C 1 0 0 2 A is a high speed C M OS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM44C1002A
20-LEAD
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC bME D • 7Tb414E 00 13 3 2 8 5=13 KM44C1012A CMOS DRAM 1 M x 4 Bit CMOS Dynamic RAM with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION Perform ance range: KM44C1012A-7 KM44C1012A-8 KM44C1012A-10 tnAC tcAc I rc
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7Tb414E
KM44C1012A
KM44C1012A-10
130ns
KM44C1012A-8
KM44C1012A-7
150ns
KM44C1012A
180ns
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Untitled
Abstract: No abstract text available
Text: CMOS DRAM 44C1002C 1M x 4 Bit CMOS Dynamic RAM with Static Column Mode GENERAL DESCRIPTION FEATURES The S am sung K M 4 4C 1 0 02 C is a C M O S high sp ee d 1, 0 4 8 , 5 7 6 x 4 D y n a m ic R a n d o m A c c e s s M e m o ry . Its • Performance range:
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KM44C1002C
110ns
130ns
150ns
20-LEAD
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KM44C1002A-8
Abstract: No abstract text available
Text: 44C1002A_ CMOS DRAM 1M X 4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM 44C 1002A is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM44C1002A_
KM44C1002A
KM44C1002A
20-LEAD
KM44C1002A-8
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KM44C1002C
Abstract: No abstract text available
Text: CMOS DRAM 44C1002C 1 M x 4 Bit CMOS Dynamic RAM with Static Column Mode GENERAL DESCRIPTION FEATURES • Performance range: • • • • • • • • • • tR A C tC A C tR C 44C1002C-5 50ns 13ns 90ns 44C1002C-6 60ns 15ns 110ns 44C1002C-7 70ns
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KM44C1002C
KM44C1002C
20-LEAD
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41C1000
Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258
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41C256
41C257
41C258
41C464
41C466
41C1000
44C256
44C258
44C1002
TC51257
fujitsu 814100
TC 55464 toshiba
HN62304
hn623257
658128
816b
hn62324
M7202A
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Untitled
Abstract: No abstract text available
Text: CMOS DRAM 44C1002 1M X4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 4 C 1 0 0 2 is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random A ccess M em ory. Its design is optimized for high perform ance applications
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KM44C1002
150ns
20-LEAD
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Untitled
Abstract: No abstract text available
Text: L*S E J> SAMSUNG ELECTRONICS' INC B Timms D 0102 SD =1 BSSM6 K 44C1002 CM OS DRAM 1M X4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 44C 1002 is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random Access Memory.
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KM44C1002
150ns
100ns
180ns
001023b
20-LEAD
SA2V38URSG
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Untitled
Abstract: No abstract text available
Text: 44C1002A CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM 44C 1002A is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM44C1002A
130ns
150ns
44C1002A-
180ns
20-LEAD
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Untitled
Abstract: No abstract text available
Text: 44C1002A CMOS DRAM 1M X4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION * Perform ance range: The Samsung K M 44C 1002A is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM44C1002A
130ns
150ns
180ns
44C1002A-
20-LEAD
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41C464
Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page
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41C256
41C257
41C258
41C464
41C466
41C1000
41C1002
44C256
44C258
41C4000
TC55B8128
424170 NEC
CY70199
44C1000
IOT7164
HN62308BP
HN62404P
TC5116100
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Untitled
Abstract: No abstract text available
Text: 44C1002 CMOS DRAM 1M X4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 4 C 1 0 0 2 is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit x 4 Dynamic Random A ccess M em ory. Its design is optimized for high perform ance applications
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KM44C1002
20-LEAD
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41C464
Abstract: 41C258 41C1000 44C256C
Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. 2. 3. 4. Product G u id e.
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KM41C256
KM424C256
424C256A.
KM424C257
KM428C128
428C256.
41C464
41C258
41C1000
44C256C
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