zener diode si 18
Abstract: 1N763 1N764 1N765 1N762 1N767 1N768 1n76 1N761 1N766
Text: 4496205 H 1 IACHÌ / <OPTOtCÈCtRONìCS 37C 0 2 2 2 3 37 4 0 0 m U U 1 N 7 6 1 Z e n e r th r u d T -//« n ? — — D eT | 44TbEDS 0002523 D i o co / ee s •> r 1 N 7 6 9 G€N€AAl D6SCRIPTION The Hitachi 400mW ZENER DIODE series 1N761 THRU 1N769 are especially designed for stabilized power
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T40620S
400mUU
1N761
1N769
400mW
1N769
DO-35
1N762
zener diode si 18
1N763
1N764
1N765
1N767
1N768
1n76
1N766
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Untitled
Abstract: No abstract text available
Text: HITACHI/ OPTOELECTRONICS 54E D • 44^205 0 0 1 2 03 7 3,20 ■ H I T M HL7836G/MG GaAIAs LD Description T The HL7836G/MG are 0.78 (Jm band GaAIAs laser diodes with a double heterojunction structure. They are designed to be used with a unitary positive voltage power supply, and are appropriate as the light
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HL7836G/MG
HL7836G/MG
HL7836MG)
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HL7836MG
Abstract: HE8807SG HL7836G HL8312E Hitachi Scans-001
Text: HI TA CH I/ O P T O E L E C T R O NI CS 54E ]> • 44^205 0012037 120 « H I T 4 HL7836G/MG GaAIAs LD Description The HL7836G/MG are 0.78 (Jm band GaAIAs laser diodes with a double heterojunction structure. They are designed to be used with a unitary positive voltage power supply, and are appropriate as the light
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HL7836G/MG
HL7836G/MG
HE8815VG
HE8813VG
HE8815VG
TjSPo100Â
HE8811,
HE8812SG,
HE8404SG,
HE7601SG
HL7836MG
HE8807SG
HL7836G
HL8312E
Hitachi Scans-001
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