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    441MM Search Results

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    441MM Price and Stock

    Microchip Technology Inc ATTINY441-MMH

    IC MCU 8BIT 4KB FLASH 20VQFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ATTINY441-MMH Tray 2,074 1
    • 1 $1.18
    • 10 $1.18
    • 100 $0.97
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    Avnet Americas ATTINY441-MMH Tray 6 Weeks 980
    • 1 $1.18
    • 10 $1.18
    • 100 $0.97
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    Mouser Electronics ATTINY441-MMH 948
    • 1 $1.18
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    • 100 $1.08
    • 1000 $0.97
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    Newark ATTINY441-MMH Bulk 1
    • 1 $1.23
    • 10 $1.18
    • 100 $1.01
    • 1000 $1.01
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    Microchip Technology Inc ATTINY441-MMH 1,162
    • 1 $1.18
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    • 100 $0.97
    • 1000 $0.9
    • 10000 $0.86
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    TME ATTINY441-MMH 1
    • 1 $1.16
    • 10 $1.12
    • 100 $1.05
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    NAC ATTINY441-MMH Tray 2,450 1
    • 1 $1.28
    • 10 $1.28
    • 100 $1.15
    • 1000 $1.04
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    Avnet Silica ATTINY441-MMH 26 Weeks 490
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    Chip1Stop ATTINY441-MMH Tray 980
    • 1 $0.851
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    EBV Elektronik ATTINY441-MMH 25 Weeks 490
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    Master Electronics ATTINY441-MMH 1,930
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    • 100 $1.138
    • 1000 $0.985
    • 10000 $0.893
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    Microchip Technology Inc ATTINY441-MMHR

    IC MCU 8BIT 4KB FLASH 20VQFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ATTINY441-MMHR Reel 6,000
    • 1 -
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    • 10000 $1.43
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    ATTINY441-MMHR Digi-Reel 1
    • 1 $1.74
    • 10 $1.74
    • 100 $1.74
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    ATTINY441-MMHR Cut Tape 1
    • 1 $1.74
    • 10 $1.74
    • 100 $1.74
    • 1000 $1.74
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    ATTINY441-MMHR Cut Tape 1
    • 1 $0.52
    • 10 $0.52
    • 100 $0.52
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    Avnet Americas ATTINY441-MMHR Reel 7 Weeks 6,000
    • 1 $1.74
    • 10 $1.74
    • 100 $1.43
    • 1000 $1.43
    • 10000 $1.43
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    Mouser Electronics ATTINY441-MMHR
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    Newark ATTINY441-MMHR Reel 6,000
    • 1 -
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    • 100 $1.48
    • 1000 $1.48
    • 10000 $1.48
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    Microchip Technology Inc ATTINY441-MMHR 90
    • 1 $1.74
    • 10 $1.74
    • 100 $1.43
    • 1000 $1.32
    • 10000 $1.26
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    NAC ATTINY441-MMHR 6,000
    • 1 $1.88
    • 10 $1.88
    • 100 $1.69
    • 1000 $1.52
    • 10000 $1.52
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    EBV Elektronik ATTINY441-MMHR 25 Weeks 6,000
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    Master Electronics ATTINY441-MMHR
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    • 10000 $1.4
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    Microchip Technology Inc ATTINY441-MMHRA0

    IC MCU 8BIT 4KB FLASH 20QFN
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    DigiKey ATTINY441-MMHRA0 Reel
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    Atmel Corporation ATTINY441-MMH

    ATTINY441 - RISC Microcontroller, 8-Bit, FLASH, AVR RISC CPU
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics ATTINY441-MMH 42 1
    • 1 $1.21
    • 10 $1.21
    • 100 $1.14
    • 1000 $1.03
    • 10000 $1.03
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    441MM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: THE EDGE LED Round Area Light – Type V Short ARE-EDR-5S-R3 BetaLED Catalog #: ARE - EDR - 5S - R3 - -D- - - - Rev. Date: 9/15/11 ø 23" [ 584mm ] 4.0" [ 102mm ] 21.4" [ 543mm ] 13.5" [ 344mm ] 17.4" [ 441mm ] 3.9" [ 98mm ] Notes: Product Family ARE Optic


    Original     		PDF 584mm 102mm 543mm 344mm 441mm 118mm 350mA 525mA 700mA ITL68092

    WEDPN4M64V-XBX

    Abstract: No abstract text available
    Text: WEDPN4M64V-XBX 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION ! High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quadbank DRAM with a synchronous interface. Each of the chip’s


    Original     		PDF WEDPN4M64V-XBX 4Mx64 125MHz 32MByte 256Mb) 216-bit 100MHz WEDPN4M64V-XBX

    Untitled

    Abstract: No abstract text available
    Text: WEDPN4M64V-XBX HI-RELIABILITY PRODUCT 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a


    Original     		PDF WEDPN4M64V-XBX 4Mx64 125MHz WEDPN4M64V-XBX 32MByte 256Mb) 100MHz

    Untitled

    Abstract: No abstract text available
    Text: WEDPN4M64V-XBX 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION  High Frequency = 100, 125, 133MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a


    Original     		PDF WEDPN4M64V-XBX 4Mx64 133MHz 32MByte 256Mb) 216-bit

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WEDPN4M72V-XB2X 4Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125MHz Package: The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a


    Original     		PDF 4Mx72 125MHz WEDPN4M72V-XB2X WEDPN4M72V-XB2X 32MByte 256Mb)

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WEDPN4M72V-XB2X PRELIMINARY 4Mx72 Synchronous DRAM GENERAL DESCRIPTION FEATURES  High Frequency = 100, 125MHz  Package:  The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing


    Original     		PDF 4Mx72 125MHz WEDPN16M64V-XB2X WEDPN4M72V-XB2X 32MByte 256Mb) 100MHz WEDPN4M72V

    Untitled

    Abstract: No abstract text available
    Text: WEDPN16M64V-XB2X 16Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION  High Frequency = 100, 125, 133MHz The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM with


    Original     		PDF WEDPN16M64V-XB2X 16Mx64 133MHz 128MByte 864-bit

    3121

    Abstract: 441M 9601 WEDPN4M64V-XBX 54TSOP
    Text: 4M x 64 SDRAM Multi-Chip Package Optimum Density and Performance in One Package WEDPN4M64V-XBX* Ideal for high performance processors and memory controllers see other side for typical application block diagrams • 58% space savings Compared to equivalvent TSOP solution


    Original     		PDF WEDPN4M64V-XBX* 441mm2 125MHz) 100MHz) 75MHz) 265mm2 1060mm2 WEDPN8M65V/WEDPN8M65VR 3121 441M 9601 WEDPN4M64V-XBX 54TSOP

    Untitled

    Abstract: No abstract text available
    Text: WEDPN4M64V-XBX HI-RELIABILITY PRODUCT 4Mx64 Synchronous DRAM ADVANCED* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a


    Original     		PDF WEDPN4M64V-XBX 4Mx64 125MHz 32MByte 256Mb) 216-bit 100MHz

    W332M64V-XBX

    Abstract: WEDPN16M64V-XB2X
    Text: White Electronic Designs WEDPN16M64V-XB2X 16Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing 268,435,456 bits. Each chip is internally configured as a


    Original     		PDF WEDPN16M64V-XB2X 16Mx64 133MHz 128MByte 864-bit W332M64V-XBX WEDPN16M64V-XB2X

    WEDPN4M72V-XB2X

    Abstract: WEDPN8M72V-XB2X
    Text: White Electronic Designs WEDPN4M72V-XB2X 4Mx72 Synchronous DRAM FEATURES „ „ GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a


    Original     		PDF WEDPN4M72V-XB2X 4Mx72 133MHz 32MByte 256Mb) 216-bit 133MHz WEDPN4M72V-XB2X WEDPN8M72V-XB2X

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WEDPN4M64V-XBX 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION n High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quadbank DRAM with a synchronous interface. Each of the chip’s


    Original     		PDF 4Mx64 125MHz WEDPN4M64V-XBX WEDPN4M64V-XBX 32MByte 256Mb) 100MHz 125MHz

    W332M64V-XBX

    Abstract: WEDPN16M64V-XB2X
    Text: White Electronic Designs WEDPN16M64V-XB2X 16Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing 268,435,456 bits. Each chip is internally configured as a


    Original     		PDF WEDPN16M64V-XB2X 16Mx64 133MHz 128MByte 864-bit W332M64V-XBX WEDPN16M64V-XB2X

    Untitled

    Abstract: No abstract text available
    Text: WEDPN4M64V-XBX 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION  High Frequency = 100, 125, 133MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a


    Original     		PDF WEDPN4M64V-XBX 4Mx64 133MHz 32MByte 256Mb) 216-bit

    WEDPN4M72V-XB2X

    Abstract: WEDPN8M72V-XB2X
    Text: White Electronic Designs WEDPN4M72V-XB2X 4Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a


    Original     		PDF WEDPN4M72V-XB2X 4Mx72 133MHz 32MByte 256Mb) 216-bit 133MHz WEDPN4M72V-XB2X WEDPN8M72V-XB2X

    WEDPN16M64V-XB2X

    Abstract: WEDPN8M64V-XB2X
    Text: White Electronic Designs WEDPN8M64V-XB2X 8Mx64 Synchronous DRAM GENERAL DESCRIPTION FEATURES The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory using 4 chips containing 134,217,728 bits. Each chip is internally configured as a quad-bank DRAM with a synchronous interface. Each of


    Original     		PDF WEDPN8M64V-XB2X 8Mx64 64MByte 512Mb) 432-bit 133MHz 133MHz WEDPN16M64V-XB2X WEDPN8M64V-XB2X

    WEDPN4M64V-XBX

    Abstract: No abstract text available
    Text: WEDPN4M64V-XBX HI-RELIABILITY PRODUCT 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a


    Original     		PDF WEDPN4M64V-XBX 4Mx64 125MHz 32MByte 256Mb) 216-bit 100MHz WEDPN4M64V-XBX

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WEDPN4M64V-XBX 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION n High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quadbank DRAM with a synchronous interface. Each of the chip’s


    Original     		PDF 4Mx64 125MHz WEDPN4M64V-XBX WEDPN4M64V-XBX 32MByte 256Mb) 100MHz 125MHz

    WEDPN4M64V-XBX

    Abstract: No abstract text available
    Text: White Electronic Designs WEDPN4M64V-XBX 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a


    Original     		PDF WEDPN4M64V-XBX 4Mx64 133MHz 32MByte 256Mb) 216-bit programme50) 100MHz 125MHz WEDPN4M64V-XBX

    DFE-2624X

    Abstract: DFE-260FX DFE-2624 d-link dfe 2624 DLINK DFE-2624 Circuit dlink DFE-2624i DFE-2624ix dlink rj45 DFE-2616X
    Text: DFE-2600 Series Ethernet/Fast Ethernet Dual-Speed Managed/Unmanaged Stackable Hubs User Guide Rev. 03 December, 1998 6DFE2600M.03 Printed In Taiwan RECYCLABLE Trademarks Copyright 1998 D-Link Corporation. Contents subject to change without prior notice.


    Original     		PDF DFE-2600 6DFE2600M 10BASE-T 100BASE-TX 100BASE-T4 100VGAnyLAN DFE-2624X DFE-260FX DFE-2624 d-link dfe 2624 DLINK DFE-2624 Circuit dlink DFE-2624i DFE-2624ix dlink rj45 DFE-2616X

    Untitled

    Abstract: No abstract text available
    Text: WEDPN4M72V-XB2X 4Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION  High Frequency = 100, 125, 133MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a


    Original     		PDF WEDPN4M72V-XB2X 4Mx72 133MHz 32MByte 256Mb) 216-bit 133MHz

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WEDPN8M64V-XB2X PRELIMINARY* 8Mx64 Synchronous DRAM GENERAL DESCRIPTION FEATURES The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory using 4 chips containing 134,217,728 bits. Each chip is internally configured as a


    Original     		PDF 8Mx64 WEDPN8M64V-XB2X WEDPN8M64V-XB2X 64MByte 512Mb) 100MHz 125MHz 133MHz* 133MHz

    PC133 registered reference design

    Abstract: 128MByt
    Text: White Electronic Designs 16Mx64 Synchronous DRAM WEDPN16M64V-XB2X PRELIMINARY* FEATURES GENERAL DESCRIPTION  High Frequency = 100, 125MHz  Package: The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing


    Original     		PDF 16Mx64 125MHz WEDPN16M64V-XB2X 128MByte 100MHz 125MHz WEDPN16M64V-ESB2 PC133 registered reference design 128MByt

    WEDPN16M64V-XB2X

    Abstract: WEDPN8M64V-XB2X bt 432
    Text: White Electronic Designs WEDPN8M64V-XB2X 8Mx64 Synchronous DRAM GENERAL DESCRIPTION FEATURES „ „ „ „ „ „ „ „ „ „ „ „ The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory using 4 chips containing 134,217,728 bits. Each chip is internally configured as a


    Original     		PDF WEDPN8M64V-XB2X 8Mx64 64MByte 512Mb) 432-bit 133MHz 133MHz WEDPN16M64V-XB2X WEDPN8M64V-XB2X bt 432