441M Search Results

441M Result Highlights (2)

Part	ECAD Model	Manufacturer	Description	Download	Buy
LTC4441MPMSE#PBF		Analog Devices	N-Ch MOSFET Gate Drvr
LTC4441MPMSE#TRPBF		Analog Devices	N-Ch MOSFET Gate Drvr

441M Price and Stock

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Microchip Technology Inc ATTINY441-MUR IC MCU 8BIT 4KB FLASH 20QFN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ATTINY441-MUR	Reel	18,000		6,000	1 - 10 - 100 - 1000 - 10000 $1.05001	Buy Now
Newark	ATTINY441-MUR	Reel			6,000	1 - 10 - 100 $1.09 1000 $1.09 10000 $1.09	Buy Now
Microchip Technology Inc	ATTINY441-MUR					1 $1.26 10 $1.26 100 $1.05 1000 $0.96 10000 $0.91	Buy Now
NAC	ATTINY441-MUR				6,000	1 $1.37 10 $1.37 100 $1.24 1000 $1.11 10000 $1.11	Buy Now
EBV Elektronik	ATTINY441-MUR			8 Weeks	6,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
TDK Epcos B82403T0441M000 CLT32-R44 440NH
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	B82403T0441M000	Cut Tape	17,632		1	1 $1.65 10 $1.401 100 $0.9615 1000 $0.82416 10000 $0.79669	Buy Now
	B82403T0441M000	Digi-Reel	17,632		1	1 $1.65 10 $1.401 100 $0.9615 1000 $0.82416 10000 $0.79669	Buy Now
Murata Manufacturing Co Ltd DLP31DN441ML4L CMC 70MA 4LN 440 OHM SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	DLP31DN441ML4L	Reel	9,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.80739	Buy Now
Bristol Electronics	DLP31DN441ML4L		3,829			1 - 10 - 100 - 1000 - 10000 -	Get Quote
TTI	DLP31DN441ML4L	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.733	Buy Now
Avnet Abacus	DLP31DN441ML4L			11 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Chip1Stop	DLP31DN441ML4L		1,204			1 - 10 - 100 - 1000 $0.757 10000 $0.757	Buy Now
Microchip Technology Inc ATTINY441-MU IC MCU 8BIT 4KB FLASH 20QFN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ATTINY441-MU	Tray	2,043		1	1 $1.16 10 $1.16 100 $1.16 1000 $1.16 10000 $1.16	Buy Now
Newark	ATTINY441-MU	Bulk			980	1 - 10 - 100 $1.02 1000 $1.02 10000 $1.02	Buy Now
Microchip Technology Inc	ATTINY441-MU		1,344			1 $1.16 10 $1.16 100 $0.96 1000 $0.89 10000 $0.85	Buy Now
NAC	ATTINY441-MU	Tray	980		1	1 $1.26 10 $1.26 100 $1.14 1000 $1.02 10000 $1.02	Buy Now
Avnet Silica	ATTINY441-MU			26 Weeks	490	1 - 10 - 100 - 1000 - 10000 -	Buy Now

EBV Elektronik	ATTINY441-MU			25 Weeks	490	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Coilcraft Inc SLC1480-441MLD FIXED IND 440NH 83A 0.18MOHM SM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SLC1480-441MLD	Reel	1,662		1	1 $2.33 10 $2.33 100 $2.33 1000 $2.33 10000 $2.33	Buy Now
Coilcraft Direct	SLC1480-441MLD		2,078		1	1 $1.86 10 $1.86 100 $1.86 1000 $0.9 10000 $0.74	Buy Now

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441M Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: DDR SDRAM 512Mb B-die x8 DDR SDRAM 512Mb B-die DDR400 SDRAM Specification sTSOP(II) (400mil x 441mil) Revision 1.1 Rev. 1.1 November 2004 DDR SDRAM 512Mb B-die (x8) DDR SDRAM 512Mb B-die Revision History Revision 1.0 (October, 2003) - First release Revision 1.1 (November, 2004)	Original	PDF	512Mb DDR400 400mil 441mil) 200MHz 400Mbps
Untitled Abstract: No abstract text available Text: DDR SDRAM 512Mb B-die x4, x8 DDR SDRAM 512Mb B-die DDR SDRAM Specification sTSOP(II) (400mil x 441mil) Revision 1.2 October, 2004 Rev. 1.2 October, 2004 DDR SDRAM 512Mb B-die (x4, x8) DDR SDRAM 512Mb B-die Revision History Revision 0.0 (February, 2003) - First version for internal review	Original	PDF	512Mb 400mil 441mil)
Untitled Abstract: No abstract text available Text: Preliminary DDR SDRAM DDR SDRAM 512Mb D-die x8 512Mb D-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (400mil x 441mil) (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.	Original	PDF	512Mb 400mil 441mil)
Untitled Abstract: No abstract text available Text: THE EDGE LED Round Area Light – Type V Short ARE-EDR-5S-R3 BetaLED Catalog #: ARE - EDR - 5S - R3 - -D- - - - Rev. Date: 9/15/11 ø 23" [ 584mm ] 4.0" [ 102mm ] 21.4" [ 543mm ] 13.5" [ 344mm ] 17.4" [ 441mm ] 3.9" [ 98mm ] Notes: Product Family ARE Optic	Original	PDF	584mm 102mm 543mm 344mm 441mm 118mm 350mA 525mA 700mA ITL68092
Untitled Abstract: No abstract text available Text: DDR SDRAM 512Mb B-die x4, x8 Pb-Free DDR SDRAM 512Mb B-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant) (400mil x 441mil) Revision 1.1 October, 2004 Rev. 1.1 October, 2004 DDR SDRAM 512Mb B-die (x4, x8) Pb-Free DDR SDRAM 512Mb B-die Revision History	Original	PDF	512Mb 400mil 441mil)
DDR333 512MB CL2.5 Abstract: DDR266 DDR333 DDR400 Text: DDR SDRAM 512Mb B-die x8 DDR SDRAM 512Mb B-die DDR SDRAM Specification 54 sTSOP-II (400mil x 441mil) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,	Original	PDF	512Mb 400mil 441mil) DDR333 512MB CL2.5 DDR266 DDR333 DDR400
Untitled Abstract: No abstract text available Text: DDR SDRAM 512Mb B-die x8 DDR SDRAM 512Mb B-die DDR400 SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant) (400mil x 441mil) Revision 1.0 Rev. 1.0 October 2003 DDR SDRAM 512Mb B-die (x8) DDR SDRAM 512Mb B-die Revision History Revision 1.0 (October, 2003)	Original	PDF	512Mb DDR400 400mil 441mil) 200MHz 400Mbps
DDR333 Abstract: DDR400 Text: DDR SDRAM 512Mb B-die x8 DDR SDRAM 512Mb B-die DDR400 SDRAM Specification sTSOP(II) (400mil x 441mil) Revision 1.0 Rev. 1.0 October 2003 DDR SDRAM 512Mb B-die (x8) DDR SDRAM 512Mb B-die Revision History Revision 1.0 (October, 2003) - First release Rev. 1.0 October 2003	Original	PDF	512Mb DDR400 400mil 441mil) 200MHz 400Mbps DDR333
DDR266 Abstract: DDR333 Text: DDR SDRAM 512Mb B-die x4, x8 Preliminary DDR SDRAM 512Mb B-die DDR SDRAM Specification sTSOP(II) (400mil x 441mil) Revision 0.1 Rev. 0.1 Agust. 2003 DDR SDRAM 512Mb B-die (x4, x8) Preliminary DDR SDRAM 512Mb B-die Revision History Revision 0.0 (February, 2003)	Original	PDF	512Mb 400mil 441mil) DDR266 DDR333
DDR266 Abstract: DDR333 DDR400 Text: Preliminary DDR SDRAM DDR SDRAM 512Mb D-die x8 512Mb D-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (400mil x 441mil) (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.	Original	PDF	512Mb 400mil 441mil) DDR266 DDR333 DDR400
Untitled Abstract: No abstract text available Text: DDR SDRAM 512Mb B-die x4, x8 Preliminary DDR SDRAM 512Mb B-die DDR SDRAM Specification sTSOP(II) (400mil x 441mil) Revision 0.0 Rev. 0.0 Feb. 2003 DDR SDRAM 512Mb B-die (x4, x8) Preliminary DDR SDRAM 512Mb B-die Revision History Revision 0.0 (February, 2003)	Original	PDF	512Mb 400mil 441mil)
Untitled Abstract: No abstract text available Text: SCT2450KE N-channel SiC power MOSFET Datasheet lOutline VDSS 1200V RDS on (Typ.) 450mW ID 10A PD 85W TO-247 (1) (2) (3) lInner circuit lFeatures (1) Gate (2) Drain (3) Source 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 Body Diode	Original	PDF	SCT2450KE 450mW O-247 R1102B
SLIM-MOX20403 Abstract: EX035D-16.000M SLIM-MOX10603 SLIM-MOX10102 EX035D20.000M SLIM-MOX10003 SM10203 EX031E-12.000M SLIM-MOX104RD SLIM-MOX20802 Text: Ohmite’s Slim-Mox provides stable performance for a wide range of resistance values, with voltage ratings up to 25K. Low temperature coefficients are available for high stability circuit applications. The spacesaving planar package offers and alternative to traditional	Original	PDF	SM102031006FE SM102 SM100 1-866-9-OHMITE SLIM-MOX20403 EX035D-16.000M SLIM-MOX10603 SLIM-MOX10102 EX035D20.000M SLIM-MOX10003 SM10203 EX031E-12.000M SLIM-MOX104RD SLIM-MOX20802
Untitled Abstract: No abstract text available Text: Slim-Mox Ohmite’s Slim-Mox provides stable performance for a wide range of resistance values, with voltage ratings up to 25K. Low temperature coefficients are available for high stability circuit applications. The spacesaving planar package offers and alternative to traditional	Original	PDF	SLIM-MOX100 SLIM-MOX101 SLIM-MOX102 SLIM-MOX103 SLIM-MOX104 SLIM-MOX106 SLIM-MOX108 SLIM-MOX202 SLIM-MOX204 SLIM-MOX206

K4S280832CNL Abstract: No abstract text available Text: shrink-TSOP K4S280832C-N CMOS SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM in sTSOP FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The K4S280832C-N is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 8	Original	PDF	K4S280832C-N K4S280832C-N 54-sTSOP K4S280832CNL
MacroChip Series Abstract: High Voltage Surface Mount Thick Film Text: Macrochip Series High Voltage/High Resistance Precision Thick Film Surface Mount Ohmite’s MacroChip resistors bring precision high voltage capabilities to surface mount applications. Designed with thick film on alumina substrate technology, the resistors can be provided in precision tolerances, high voltage ratings, and high resistance values.	Original	PDF	MC102827501JE MC102821002JE MC102821252JE MC102821502JE MC102821752JE MC102822002JE MC102822502JE 1-866-9-OHMITE MC102825002JE MC102827502JE MacroChip Series High Voltage Surface Mount Thick Film
ISLA110P50 Abstract: ISLA110P50IRZ ISLA112P50 ISLA118P50 500MSPS 0x60-0x64 Text: ISLA110P50 Features The ISLA110P50 is a low-power, high-performance, 500MSPS analog-to-digital converter designed with Intersil’s proprietary FemtoCharge technology on a standard CMOS process. The ISLA110P50 is part of a pin-compatible portfolio of 8, 10 and 12-bit A/Ds. This	Original	PDF	ISLA110P50 ISLA110P50 500MSPS 12-bit KAD551XP-50 250MSPS 500MSPS. 500MHz JESD-MO220. ISLA110P50IRZ ISLA112P50 ISLA118P50 0x60-0x64
WEDPN4M64V-XBX Abstract: No abstract text available Text: WEDPN4M64V-XBX 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION ! High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quadbank DRAM with a synchronous interface. Each of the chip’s	Original	PDF	WEDPN4M64V-XBX 4Mx64 125MHz 32MByte 256Mb) 216-bit 100MHz WEDPN4M64V-XBX
Untitled Abstract: No abstract text available Text: WEDPN4M64V-XBX HI-RELIABILITY PRODUCT 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a	Original	PDF	WEDPN4M64V-XBX 4Mx64 125MHz WEDPN4M64V-XBX 32MByte 256Mb) 100MHz
Untitled Abstract: No abstract text available Text: shrink-TSOP KM48S16030BN Preliminary CMOS SDRAM 128Mb SDRAM Shrink TSOP 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 July 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 July 1999 shrink-TSOP	Original	PDF	KM48S16030BN 128Mb A10/AP
MAX643 Abstract: MAX630/MAX4193 MAX8212 equivalent max630 inverter /S69 2LF Text: 19-0915; Rev 1; 12/03 CMOS Micropower Step-Up Switching Regulator Maxim’s MAX630 and MAX4193 CMOS DC-DC regulators are designed for simple, efficient, minimum-size DC-DC converter circuits in the 5mW to 5W range. The MAX630 and MAX4193 provide all control and power	Original	PDF	MAX630 MAX4193 375mA MAX643 MAX630/MAX4193 MAX8212 equivalent inverter /S69 2LF
l55b Abstract: 2200 microfarad electrolytic capacitor J501M 148X E1600c mil-c-3965 22000 microfarad capacitor 200D607X0040A1 Text: A COMPANY TYPE 2 0 0 D. 202D W et Tantalum C apacitors OF SPRAGUE W et Sintered Anode T a n t a l e x Components T a n t a p a k ® C apacitor Assem blies FEATURES Wet Sintered Anode capacitor assemblies are widely used in filter, coupling, bypass and time-delay circuits in	OCR Scan	PDF
max630 Abstract: No abstract text available Text: y n y j x i y H CMOS M icropow er S tep-U p S w itch in g R egulator Features General Description Maxim’s MAX630 and MAX4193 CMOS DC-DC regulators are designed for simple, efficient, minimum size DC-DC converter circuits in the 5 milliwatt to 5 watt range. The MAX630 and MAX4193 provide all	OCR Scan	PDF	MAX630 MAX4193 375mA currMAX641 AX642 AX643
DHS43 Abstract: 40KV 461Z-30KV Text: HIGH VOLTAGE CERAMIC CAPACITORS CLASS I & CLASS III mtifintn PART NUMBERING SYSTEM CLASS I 1 VOLTAGE Identified by a two-digit number in KVDC. TEMPERATURE CHARACTERISTICS AND T.C. TOLERANCE Per standard EIA specifications. CAPACITANCE TOLERANCE . M=±20% CAPACITANCE VALUE	OCR Scan	PDF	DHS20 N4700561M-10KV DHS30 N4700122M-10KV N4700 182M-10KV DHS38 282M-10KV DHS43 40KV 461Z-30KV

441M Search Results

441M Result Highlights (2)

441M Price and Stock

Microchip Technology Inc ATTINY441-MUR

TDK Epcos B82403T0441M000

Murata Manufacturing Co Ltd DLP31DN441ML4L

Microchip Technology Inc ATTINY441-MU

Coilcraft Inc SLC1480-441MLD

441M Datasheets Context Search

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DDR333 512MB CL2.5

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DDR333

DDR266

DDR266

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SLIM-MOX20403

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K4S280832CNL

MacroChip Series

ISLA110P50

WEDPN4M64V-XBX

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MAX643

l55b

max630

DHS43