Untitled
Abstract: No abstract text available
Text: H M 5 1 4 1 O O C /C L S e r i e s Preliminary 4,194,304-word x 1-bit Dynamic Random Access Memory HITACHI T he H ita c h i H M 514100C is a CM OS dynam ic R A M o rg a n iz e d 4 ,1 9 4 ,3 0 4 w o rds x 1 b its . HM 514100C has realized higher density, higher
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304-word
514100C
300-m
20-pin
44TbEG3
HM514100C/CL
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Untitled
Abstract: No abstract text available
Text: 5QE D 44^503 G01341Q 5 HITACHI/ L0GIC/ARRAYS/MÉÎ1 0 H IT A C H I S e p t e m b e r , 1985 CMOS GATE ARRAYS i HD61 SERIES DESIGNER'S MANUAL AND PRODUCT SPECIFICATION HITACHI/ LOGIC/ARR'A YS/MEM SQE D • 4 4TLS03 0G13411 4 T -42-11-09 CMOS GATE ARRAYS HD61 SERIES
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G01341Q
4TLS03
0G13411
HD14070B
1407IB
HD14556B
HD14558B
HD14560B
HD14562B
HD14072B
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PDF
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HM514280AJ7
Abstract: HM514280AJ-7 hm514280
Text: blE I • m lb 203 0023114 535 ■ H IT S HM514280A/AL Series -HM51S4280A/AL Series 262,144-word x 18-bit Dynamic Random Access Memory HITACHI/ The Hitachi HM514280A/AL are CMOS dynamic RA M o rg an ized as 2 6 2 ,1 4 4 -w o rd x 18-bit. HM 514280A/AL have realized higher density,
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HM514280A/AL
--------------HM51S4280A/AL
144-word
18-bit
18-bit.
14280A/AL
400mil
HM514280AJ7
HM514280AJ-7
hm514280
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PDF
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Untitled
Abstract: No abstract text available
Text: i4inba03 HB56D25632 Series- IHITS T44 T-4& -Z3-17 262,144-Word x 32-Bit High Density Dynamic RAM Module • DESCRIPTION DOIIDIR ■ PIN OUT The HB56D25632B is a 256k x 32 dynamic RAM module, mounted 8 pieces of 1 Mbit DRAM HM514256JP sealed in SOJ package. An outline of the HB56D25632B is 72-pin sin
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i4inba03
HB56D25632
-Z3-17
144-Word
32-Bit
HB56D25632B
HM514256JP)
72-pin
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PDF
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HM6264ALF
Abstract: 6264AFP-15 tnuu
Text: HM6264A Series 5.0 V Supply 8192-word x 8-bit High Speed CMOS Static RAM Features • Low -power standby — — 0.1 m W typ 10 (iW (typ) L-/LL-version Type No. Access time HM6264ASP-10 100 ns HM6264ASP-12 120 ns HM6264ASP-15 150 ns HM6264ALSP-10 100 ns
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HM6264A
8192-word
HM6264ASP-10
HM6264ASP-12
HM6264ASP-15
HM6264ALSP-10
HM6264ALSP-12
300-mil,
28-pin
DP-28N)
HM6264ALF
6264AFP-15
tnuu
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PDF
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Untitled
Abstract: No abstract text available
Text: HM5216808C Series HM5216408C Series 1,048,576-word x 8-bit x 2-bank Synchronous Dynamic RAM SSTL-3 2,097,152-word x 4-bit x 2-bank Synchronous Dynamic RAM (SSTL-3) HITACHI ADE-203-617 (Z) Preliminary Rev. 0.0 Jul. 10, 1996 Description A ll inputs and outputs are referred to the rising edge of the clock input. The HM5216808C Series,
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HM5216808C
HM5216408C
576-word
152-word
ADE-203-617
Hz/100
Hz/83
7777K\
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PDF
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Untitled
Abstract: No abstract text available
Text: HB56A272E-5/6/7 2,097,152-wordx72-bit High Density Dynamic RAM Module HITACHI A D E -2 0 3 -7 4 3 A Z R ev. 1.0 F e b .2 0 ,1 9 9 7 Description The HB56A272E belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The HB56A272E is a 2M
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HB56A272E-5/6/7
152-wordx72-bit
HB56A272E
16-Mbit
HM5117800)
16-bit
74ABT16244)
168-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: HM5164800A Series HM5165800A Series 8388608-word x 8-bit Dynamic Random Access Memory HITACHI ADE-203-595 Z Preliminary Rev. 0.0 Jun. 3, 1996 Description The Hitachi HM5164800A Series, HM5165800A Series are CMOS dynamic RAMs organized as 8,388,608-word x 8-bit. They employ the most advanced CMOS technology for high performance and
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HM5164800A
HM5165800A
8388608-word
ADE-203-595
608-word
400-mil
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PDF
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HM628128LP-10
Abstract: HM628128LP-8 HM628128LFP-7 ah41 hm628128-10 HM628128T-7 M628128 DP-32 HM628128 HM628128FP-10
Text: HM628128 Series - 13 10 72 -w o rd x 8 -b it H ig h S p eed C M O S S ta tic RAM The Hitachi HM 628128 is a CMOS static RAM organized 128-kword x 8-bit. It realizes higher d en sity, h igh er perform ance and low pow er consum ption by em ploying 0.8 Jim Hi-CMOS
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HM628128
131072-word
128-kword
525-mil
460-mil
600-mil
4MTb203
HM628128LP-10
HM628128LP-8
HM628128LFP-7
ah41
hm628128-10
HM628128T-7
M628128
DP-32
HM628128FP-10
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PDF
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TAE 1102
Abstract: HN28F101 HN28F101P-12 HN28F101P-15
Text: HN28F101 Series Preliminary 1M 128K x 8-bit Flash Memory • DESCRIPTION The Hitachi HN28F101 is a 1-Megabit CMOS Flash Memory organized as 131,072 x 8-bit. The HN28F101 is capable of in-system e lectrica l chip erasure and reprogramming. The HN28F101 programs and erases data with a 12 V
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HN28F101
HN28F101:
GD2S113
TAE 1102
HN28F101P-12
HN28F101P-15
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PDF
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B203 A2
Abstract: HN28F101 HN29C4001FP-15 HN29C4001FP-17 HN29C4001R-15 HN29C4001T-15 HN29C4001T-17 Hitachi Scans-001
Text: HN29C4001 Series Preliminary 4M 512K x 8-bit Flash Memory • DESCRIPTION The Hitachi HN29C4001 is a 4-Megabit CMOS Flash Memory organized as 524,288 x 8-bit. The HN29C4001 is capable of in-system e le ctrica l chip erasure and reprogramming. The HN29C4001 programs and erases data with a 12 V
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HN29C4001
32-lead
HN28F101,
HN28F4001)
B203 A2
HN28F101
HN29C4001FP-15
HN29C4001FP-17
HN29C4001R-15
HN29C4001T-15
HN29C4001T-17
Hitachi Scans-001
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PDF
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HM628128LP-10SL
Abstract: HM628128LP-10 HM628128LFP-8 HM628128LFP-8SL
Text: HM628128 Series - 131072-word x 8-bit High Speed CMOS Static RAM The Hitachi HM628128 is a CMOS static RAM organized 128-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 Jim Hi-CMOS process technology.
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HM628128
131072-word
128-kword
525-mil
460-mil
600-mil
4M1b203
HM628128LP-10SL
HM628128LP-10
HM628128LFP-8
HM628128LFP-8SL
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PDF
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HM514402
Abstract: M514402 HM514402bs HM514402BZ
Text: HM514402B/BL Series 1,048,576-word x 4-bit Dynamic RAM The Hitachi HM 514402B/BL is a CMOS dynamic R A M o rg a n iz e d 1 ,0 4 8 ,5 7 6 -w o rd x 4 -b it. H M 5 1 4 4 0 2 B /B L has re a liz e d h ig h e r d en sity , h ig h er p e rfo rm a n c e and v ario u s fu n c tio n s by
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HM514402B/BL
576-word
20-pin
HM514402BS/BLS-7
HM514402
M514402
HM514402bs
HM514402BZ
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PDF
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Untitled
Abstract: No abstract text available
Text: HB56UW472EJNB Series, HB56UW464EJNB Series 4.194.304-word x 72-bit High Density Dynamic RAM Module 4.194.304-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-723A Z Rev.1.0 Feb. 20, 1997 Description The HB56UW472EJNB, HB56UW464EJNB belong to 8 Byte DIMM (Dual In-line Memory Module)
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HB56UW472EJNB
HB56UW464EJNB
304-word
72-bit
64-bit
ADE-203-723A
HB56UW472EJNB,
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PDF
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Untitled
Abstract: No abstract text available
Text: HN62335B Series Preliminary 4M 512K x 8-bit Mask ROM • DESCRIPTION The Hitachi HN62335B Series is a 4-Megabit CMOS Mask Programmable Read Only Memory organized as 524,288 x 8-bit. The low power consumption of this device makes it ideal for battery powered, portable systems. In addition, the high density and
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OCR Scan
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HN62335B
32-pin
32-lead
ns/150
441b203
0025f
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PDF
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Untitled
Abstract: No abstract text available
Text: HN27C4096A Series 4M 256K x 16-bit UV and OTP EPROM • DESCRIPTION The Hitachi HN27C4096A is a 4-Megabit Ultraviolet Erasable and One-Time Programmable Electrically Programmable Read Only Memory organized as 262,144 x 16-bits. The HN27C4096A features fast address access times of 100,
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HN27C4096A
16-bit)
16-bits.
32-bit
40-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: HM5164165A Series HM5165165A Series 4194304-word x 16-bit Dynamic RAM HITACHI ADE-203-453 Z Preliminary - Rev. 0.4 Apr. 28, 1997 Description The Hitachi HM5164165A Series, HM5165165A Series are CMOS dynamic RAMs organized as 4,194,304-word x 16-bit. They employ the most advanced CMOS technology for high performance and
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HM5164165A
HM5165165A
4194304-word
16-bit
ADE-203-453
304-word
16-bit.
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PDF
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Untitled
Abstract: No abstract text available
Text: H N 2 7 V 1 0 1 A Preliminary S e r ie s 1M 128K x 8-bit OTP EPROM • DESCRIPTION The Hitachi HN27V101A is a 1-Megabit One-Time Programmable Electrically Programmable Read Only Memory organized as 131,072 x 8-bits. The HN27V101A features a low power supply voltage and low
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HN27V101A
32-lead
HN27C101A
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PDF
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HM514900AJ
Abstract: HM514900ATT7
Text: HM514900A/AL Series Preliminary 524,288-word x 9-bit Dynamic Random Access Memory T h e H ita c h i H M 5 1 4 9 0 0 A a re C M O S d y n a m ic R A M o r g a n iz e d a s 5 2 4 ,2 8 8 - w o r d x 9 - b i t. H M 514900A have realized h ig h er density, h igher
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OCR Scan
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HM514900A/AL
288-word
14900A
400-m
28-pin
HM514900AJ
HM514900ATT7
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PDF
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Untitled
Abstract: No abstract text available
Text: HN58V1001 Series Preliminary 1M 128K x 8-bit EEPROM • DESCRIPTION The Hitachi HN58V1001 is a 1-Megabit CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) organized as 131,072 x 8-bits. The HN58V1001 is capable of in-system electrical Byte and Page reprogrammability.
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HN58V1001
128-Byte
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PDF
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Untitled
Abstract: No abstract text available
Text: HM514265DI Series 262144-word x 16-bit Dynamic RAM HITACHI ADE-203-709A Z Rev. 1.0 Feb. 13,1997 Description The Hitachi HM514265DI Series is a CMOS dynamic RAM organized 262,144-word x 16-bit. HM514265DI Series has realized higher density, higher performance and various functions by employing
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HM514265DI
262144-word
16-bit
ADE-203-709A
144-word
16-bit.
400-mil
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PDF
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Edd 44
Abstract: HM514405C HM514405CS-6 HM514405CS-7 HM514405CS-8 2B4D Hitachi Scans-001
Text: H M 5 1 4 4 0 5 C Preliminary S e r ie s 1,048,576-w ord x 4-bit Dynam ic Random Access M em ory HITACHI The H itachi H M 514405C is a CMOS dynam ic RAM o rg a n iz e d 1 ,0 4 8 ,5 7 6 w ords x 4 b its. HM 514405C has realized higher density, higher performance and various functions by employing
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OCR Scan
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HM514405C
576-word
300-mil
26-pin
Edd 44
HM514405CS-6
HM514405CS-7
HM514405CS-8
2B4D
Hitachi Scans-001
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PDF
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Untitled
Abstract: No abstract text available
Text: HM5216326 Serie 16M LVTTL interface SGRAM 2-Mword x 32-bit 125 MHz/100 MHz/83 MHz HITACHI ADE-203-678B (Z) Preliminary, Rev. 0.3 Jan. 14,1998 Description All inputs and outputs signals refers to the rising edge of the clock input. The HM5216326 provides 2
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OCR Scan
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HM5216326
32-bit)
Hz/100
Hz/83
ADE-203-678B
FP-100H
TFP-100H
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PDF
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hitachi sr 302
Abstract: No abstract text available
Text: HI TA C H I / L O G I C / A R R A Y S / M E M S1E D I 44^203 HM514100JP/ZP-7- OGi abl B fibl • H I T E "T- 4 4 ,-2 3 -IS" 4,194,304-Word x 1-Bit Dynamic Random Access Memory ■ DESCRIPTION HM51440QJP Series The Hitachi HM514100 is a CMOS dynamic RAM organized 4,194,304 word x
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HM514100JP/ZP-7--------------------
304-Word
HM51440QJP
HM514100
20-pin
CP-20DA)
hitachi sr 302
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PDF
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