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    4355 TRANSISTOR Search Results

    4355 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    4355 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MAX17015A

    Abstract: MAX17005 AC adapter 19V
    Text: 19-4355; Rev 0; 10/08 1.2MHz, Low-Cost, High-Performance Chargers The MAX17005A/MAX17006A/MAX17015A are high-frequency multichemistry battery chargers. These circuits feature a new high-frequency current-mode architecture that significantly reduces component size and cost. The


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    PDF MAX17005A/MAX17006A/MAX17015A T2044-3 MAX17005A/MAX17006A/MAX17015A MAX17015A MAX17005 AC adapter 19V

    MAX17015A

    Abstract: MAX17005 schematic diagram converter input 24v to 19v 4a MAX17015aetp AC adapter 19V MAX17005A schematic diagram 24V NiMh charge controller 7 stage PWM battery charge controller
    Text: 19-4355; Rev 0; 10/08 1.2MHz, Low-Cost, High-Performance Chargers The MAX17005A/MAX17006A/MAX17015A are high-frequency multichemistry battery chargers. These circuits feature a new high-frequency current-mode architecture that significantly reduces component size and cost*.


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    PDF MAX17005A/MAX17006A/MAX17015A T2044-3 MAX17005A/MAX17006A/MAX17015A MAX17015A MAX17005 schematic diagram converter input 24v to 19v 4a MAX17015aetp AC adapter 19V MAX17005A schematic diagram 24V NiMh charge controller 7 stage PWM battery charge controller

    IXAN0011

    Abstract: 0011 resonant smps 500W smps 500w half bridge 2kw mosfet smps 500W half bridge converter 2kw 1kw full bridge converter smps smps 1kW DD408
    Text: IXAN0011 Driving Your MOSFETs Wild to Obtain Greater Efficiencies, Power Densities, and Lower Overall Costs. Sam S. Ochi Director of Integrated Circuits Research and Development IXYS Corporation 3540 Bassett St., Santa Clara California USA Phone: 408-982-4355, Fax: 408-496-0670


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    PDF IXAN0011 100KHz IXAN0011 0011 resonant smps 500W smps 500w half bridge 2kw mosfet smps 500W half bridge converter 2kw 1kw full bridge converter smps smps 1kW DD408

    PN4354

    Abstract: PN4355 PN4356
    Text: Transys Electronics L I M I T E D PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN4354 PN4355 PN4356 TO-92 Plastic Package E BC General Purpose Amplifiers DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current - Continuous


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    PDF PN4354 PN4355 PN4356 PN4354 PN4355 PN4356

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN4354 PN4355 PN4356 TO-92 Plastic Package E BC General Purpose Amplifiers DESCRIPTION Collector Emitter Voltage Collector Base Voltage


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    PDF PN4354 PN4355 PN4356 C-120 PN4354 56REV081001

    PN4355

    Abstract: PN4356 PN4354
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN4354 PN4355 PN4356 TO-92 Plastic Package E BC General Purpose Amplifiers DESCRIPTION Collector Emitter Voltage Collector Base Voltage


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    PDF ISO/TS16949 PN4354 PN4355 PN4356 C-120 PN4354 56REV081001 PN4355 PN4356

    4355 data sheet

    Abstract: PN4354 PN4355 PN4356
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN4354 PN4355 PN4356 TO-92 Plastic Package General Purpose Amplifiers DESCRIPTION Collector Emitter Voltage


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    PDF PN4354 PN4355 PN4356 C-120 PN4354 56REV081001 4355 data sheet PN4355 PN4356

    PN4354

    Abstract: PN4355 PN4356
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN4354 PN4355 PN4356 TO-92 Plastic Package E BC General Purpose Amplifiers DESCRIPTION Collector Emitter Voltage Collector Base Voltage


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    PDF PN4354 PN4355 PN4356 C-120 PN4354 56REV081001 PN4355 PN4356

    LT4352

    Abstract: 1000 volt mosfet mosfet irf3710 TRANSZORB 24v DE14 FDB3632 LN1351C MBR10100 IRF3710
    Text: LTC4355 Positive High Voltage Ideal Diode-OR with Input Supply and Fuse Monitors DESCRIPTION FEATURES n n n n n n n n Replaces Power Schottky Diodes Controls N-Channel MOSFETs 0.5 s Turn-Off Time Limits Peak Fault Current Wide Operating Voltage Range: 9V to 80V


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    PDF LTC4355 14-Lead 16-Lead LTC4355, LT4352 LTC4354 LTC4357 LTC4358 4355fd LT4352 1000 volt mosfet mosfet irf3710 TRANSZORB 24v DE14 FDB3632 LN1351C MBR10100 IRF3710

    LTC4357

    Abstract: No abstract text available
    Text: LTC4355 Positive High Voltage Ideal Diode-OR with Input Supply and Fuse Monitors DESCRIPTION FEATURES n n n n n n n n Replaces Power Schottky Diodes Controls N-Channel MOSFETs 0.5 s Turn-Off Time Limits Peak Fault Current Wide Operating Voltage Range: 9V to 80V


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    PDF LTC4355 LTC4355, 10-Bit 4355fb LTC4357

    N-CHANNEL MOSFET 30V 2A SOT-23 MON

    Abstract: ORing fet 48v 5a 24v in 5v 10A OUT DE14 FDB3632 LN1351C MBR10100 LTC4261 LTC4358 CM4Z669-LTC
    Text: LTC4355 Positive High Voltage Ideal Diode-OR with Input Supply and Fuse Monitors DESCRIPTION FEATURES n n n n n n n n Replaces Power Schottky Diodes Controls N-Channel MOSFETs 0.5 s Turn-Off Time Limits Peak Fault Current Wide Operating Voltage Range: 9V to 80V


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    PDF LTC4355 14-Lead 16-Lead LTC4355, LT4351 LTC4354 LTC4357 LTC4358 4355fc N-CHANNEL MOSFET 30V 2A SOT-23 MON ORing fet 48v 5a 24v in 5v 10A OUT DE14 FDB3632 LN1351C MBR10100 LTC4261 LTC4358 CM4Z669-LTC

    LTC4352

    Abstract: lt 0210 ORing fet 48v 5a DE14 FDB3632 LN1351C MBR10100 ZENER DIODE 1.23V 7A, 100v fast recovery diode IRLR3110
    Text: LTC4355 Positive High Voltage Ideal Diode-OR with Input Supply and Fuse Monitors DESCRIPTION FEATURES n n n n n n n n Replaces Power Schottky Diodes Controls N-Channel MOSFETs 0.3 s Turn-Off Time Limits Peak Fault Current Wide Operating Voltage Range: 9V to 80V


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    PDF LTC4355 14-Lead 16-Lead LTC4355, LTC4352 LTC4354 LTC4357 LTC4358 4355fe LTC4352 lt 0210 ORing fet 48v 5a DE14 FDB3632 LN1351C MBR10100 ZENER DIODE 1.23V 7A, 100v fast recovery diode IRLR3110

    Untitled

    Abstract: No abstract text available
    Text: LTC4355 Positive High Voltage Ideal Diode-OR with Input Supply and Fuse Monitors DESCRIPTION FEATURES n n n n n n n n Replaces Power Schottky Diodes Controls N-Channel MOSFETs 0.3µs Turn-Off Time Limits Peak Fault Current Wide Operating Voltage Range: 9V to 80V


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    PDF LTC4355 14-Lead 16-Lead LTC4355, LTC4352 LTC4354 LTC4357 LTC4358 4355fe

    Untitled

    Abstract: No abstract text available
    Text: LTC4355 Positive High Voltage Ideal Diode-OR with Input Supply and Fuse Monitors Description Features n n n n n n n n Replaces Power Schottky Diodes Controls N-Channel MOSFETs 0.3µs Turn-Off Time Limits Peak Fault Current Wide Operating Voltage Range: 9V to 80V


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    PDF LTC4355 LTC4355, 10-Bit 4355ff com/LTC4355

    LTC4355CS

    Abstract: F115A LTC4355IDE
    Text: LTC4355 Positive High Voltage Ideal Diode-OR with Input Supply and Fuse Monitors DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ Replaces Power Schottky Diodes Controls N-Channel MOSFETs 0.5µs Turn-Off Time Limits Peak Fault Current Wide Operating Voltage Range: 9V to 80V


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    PDF LTC4355 LTC4355, 10-Bit 4355f LTC4355CS F115A LTC4355IDE

    HSC4242

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6739-C Issued Date : 1994.05.18 Revised Date : 1999.08.01 Page No. : 1/3 MICROELECTRONICS CORP. HSC4242 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC4242 is designed for triple diffused planar type and high speed switching applications.


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    PDF HE6739-C HSC4242 HSC4242

    HSCF4242

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE9208-A Issued Date : 1998.07.01 Revised Date : 1999.08.01 Page No. : 1/3 MICROELECTRONICS CORP. HSCF4242 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSCF4242 is designed for triple diffused planar type and high speed switching applications.


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    PDF HE9208-A HSCF4242 HSCF4242

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6739 Issued Date : 1994.05.18 Revised Date : 2004.11.19 Page No. : 1/4 MICROELECTRONICS CORP. HSC4242 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC4242 is designed for triple diffused planar type and high speed switching applications.


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    PDF HE6739 HSC4242 HSC4242 O-220 183oC 217oC 260oC

    435X

    Abstract: 5082-4355 E55361 photodiode hp 1976
    Text: DUAL HIGH SPEED OPTICALLY COUPLED ISOLATORS H E W L E T T ^ PACKARD C O M PO N EN T S 5082-4354 5082-4355 T E C H N IC A L D A T A A P R IL 1976 9 401.370} . O U T L IN E D R A W IN G if 90 0 5 » hp S C H E M A T IC T 435X X X X IR as * s a ; 8® l i P IN


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    PDF 000V/MS 3000Vdc: E55361) 000V//i 100ms 435X 5082-4355 E55361 photodiode hp 1976

    MPS 4355 transistor

    Abstract: MPS4355 TO92-EBC
    Text: IVI PNP SILICON TRANSISTOR DESCRIPTION MPS4355 is PNP silicon planar epitaxial transistor designed for AF medium power amplifiers. TO-92 EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation


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    PDF MPS4355 625mW 500nA 100mA 100nA Oct-96 150mA 500mA MPS 4355 transistor TO92-EBC

    MPS 4355 transistor

    Abstract: mps 1132 MPS 3019 K 3053 TRANSISTOR TO-237 MICRO 3020 transistor
    Text: 6091788 MICRO ELECTRONICS CORP ~~ä5 _ * 82D 00661 DE |bGT17fifl GGGDbbl 2 | Medium Power Am plifiers and Switches X P O L A R IT Y M AXIM UM R A T IN G S CASE PN PN PN PN PN 3568 3569 3638 3638A 3641 N N P P N TO-92A TO-92A TO-92A TO-92A TO-92A 625 625 625


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    PDF bGT17fifl O-92A MPS 4355 transistor mps 1132 MPS 3019 K 3053 TRANSISTOR TO-237 MICRO 3020 transistor

    2N5108

    Abstract: RF NPN POWER TRANSISTOR 2 WATT 2 GHZ TRANSISTOR C-111 M MOTOROLA 2N5108
    Text: MOTOROLA SEM IC O N D U CTO R TECHNICAL DATA The RF Line 1.0 W - 1 GHz HIGH FREQUENCY TRANSISTOR NPN SILIC O N NPN SILICON HIGH-FREQUENCY TRANSISTOR . . designed fo r am plifier, frequency m u ltip lie r, or oscillator applica­ tions in m ilita ry and industrial equipm ent. Suitable fo r use as outp ut,


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    PDF 2N5108 2N5108 RF NPN POWER TRANSISTOR 2 WATT 2 GHZ TRANSISTOR C-111 M MOTOROLA 2N5108

    B1335A

    Abstract: D2033A D1855A D2037 B1186A 2SC457 2sb1335a d2038 B 1186a B1085A
    Text: 1 rarisiston, ¡ m m • Power Transistors • TQ-220, TO-22QFP, HRT Types Vctc C O LLE CTOR TO EMITTER VOLTAGE V 60 50 T 100 120 200 160 300 0 1 400 2SC4505 PSD 1562 15 ■ 2S D 1562A 2SB 1085 2S B 1085A 2S D 1763 | 2SD 1763A 2SB 1186 | 2SB 1186A 2SD 2033


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    PDF TQ-220, O-22QFP, 2SC4505 SDp901' 2SC4354 2SD2061 2SB1496 2SB1334" 2SC457 2SA1634 B1335A D2033A D1855A D2037 B1186A 2sb1335a d2038 B 1186a B1085A

    Untitled

    Abstract: No abstract text available
    Text: PD- 9.1470E International I R Rectifier IRG4PC50U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


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    PDF 1470E IRG4PC50U O-247AC 5545E