MAX17015A
Abstract: MAX17005 AC adapter 19V
Text: 19-4355; Rev 0; 10/08 1.2MHz, Low-Cost, High-Performance Chargers The MAX17005A/MAX17006A/MAX17015A are high-frequency multichemistry battery chargers. These circuits feature a new high-frequency current-mode architecture that significantly reduces component size and cost. The
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MAX17005A/MAX17006A/MAX17015A
T2044-3
MAX17005A/MAX17006A/MAX17015A
MAX17015A
MAX17005
AC adapter 19V
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MAX17015A
Abstract: MAX17005 schematic diagram converter input 24v to 19v 4a MAX17015aetp AC adapter 19V MAX17005A schematic diagram 24V NiMh charge controller 7 stage PWM battery charge controller
Text: 19-4355; Rev 0; 10/08 1.2MHz, Low-Cost, High-Performance Chargers The MAX17005A/MAX17006A/MAX17015A are high-frequency multichemistry battery chargers. These circuits feature a new high-frequency current-mode architecture that significantly reduces component size and cost*.
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MAX17005A/MAX17006A/MAX17015A
T2044-3
MAX17005A/MAX17006A/MAX17015A
MAX17015A
MAX17005
schematic diagram converter input 24v to 19v 4a
MAX17015aetp
AC adapter 19V
MAX17005A
schematic diagram 24V NiMh charge controller
7 stage PWM battery charge controller
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IXAN0011
Abstract: 0011 resonant smps 500W smps 500w half bridge 2kw mosfet smps 500W half bridge converter 2kw 1kw full bridge converter smps smps 1kW DD408
Text: IXAN0011 Driving Your MOSFETs Wild to Obtain Greater Efficiencies, Power Densities, and Lower Overall Costs. Sam S. Ochi Director of Integrated Circuits Research and Development IXYS Corporation 3540 Bassett St., Santa Clara California USA Phone: 408-982-4355, Fax: 408-496-0670
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IXAN0011
100KHz
IXAN0011
0011
resonant smps 500W
smps 500w half bridge
2kw mosfet
smps 500W
half bridge converter 2kw
1kw full bridge converter smps
smps 1kW
DD408
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PN4354
Abstract: PN4355 PN4356
Text: Transys Electronics L I M I T E D PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN4354 PN4355 PN4356 TO-92 Plastic Package E BC General Purpose Amplifiers DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current - Continuous
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PN4354
PN4355
PN4356
PN4354
PN4355
PN4356
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN4354 PN4355 PN4356 TO-92 Plastic Package E BC General Purpose Amplifiers DESCRIPTION Collector Emitter Voltage Collector Base Voltage
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PN4354
PN4355
PN4356
C-120
PN4354
56REV081001
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PN4355
Abstract: PN4356 PN4354
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN4354 PN4355 PN4356 TO-92 Plastic Package E BC General Purpose Amplifiers DESCRIPTION Collector Emitter Voltage Collector Base Voltage
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ISO/TS16949
PN4354
PN4355
PN4356
C-120
PN4354
56REV081001
PN4355
PN4356
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PDF
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4355 data sheet
Abstract: PN4354 PN4355 PN4356
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN4354 PN4355 PN4356 TO-92 Plastic Package General Purpose Amplifiers DESCRIPTION Collector Emitter Voltage
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PN4354
PN4355
PN4356
C-120
PN4354
56REV081001
4355 data sheet
PN4355
PN4356
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PDF
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PN4354
Abstract: PN4355 PN4356
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN4354 PN4355 PN4356 TO-92 Plastic Package E BC General Purpose Amplifiers DESCRIPTION Collector Emitter Voltage Collector Base Voltage
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PN4354
PN4355
PN4356
C-120
PN4354
56REV081001
PN4355
PN4356
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PDF
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LT4352
Abstract: 1000 volt mosfet mosfet irf3710 TRANSZORB 24v DE14 FDB3632 LN1351C MBR10100 IRF3710
Text: LTC4355 Positive High Voltage Ideal Diode-OR with Input Supply and Fuse Monitors DESCRIPTION FEATURES n n n n n n n n Replaces Power Schottky Diodes Controls N-Channel MOSFETs 0.5 s Turn-Off Time Limits Peak Fault Current Wide Operating Voltage Range: 9V to 80V
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LTC4355
14-Lead
16-Lead
LTC4355,
LT4352
LTC4354
LTC4357
LTC4358
4355fd
LT4352
1000 volt mosfet
mosfet irf3710
TRANSZORB 24v
DE14
FDB3632
LN1351C
MBR10100
IRF3710
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LTC4357
Abstract: No abstract text available
Text: LTC4355 Positive High Voltage Ideal Diode-OR with Input Supply and Fuse Monitors DESCRIPTION FEATURES n n n n n n n n Replaces Power Schottky Diodes Controls N-Channel MOSFETs 0.5 s Turn-Off Time Limits Peak Fault Current Wide Operating Voltage Range: 9V to 80V
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LTC4355
LTC4355,
10-Bit
4355fb
LTC4357
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N-CHANNEL MOSFET 30V 2A SOT-23 MON
Abstract: ORing fet 48v 5a 24v in 5v 10A OUT DE14 FDB3632 LN1351C MBR10100 LTC4261 LTC4358 CM4Z669-LTC
Text: LTC4355 Positive High Voltage Ideal Diode-OR with Input Supply and Fuse Monitors DESCRIPTION FEATURES n n n n n n n n Replaces Power Schottky Diodes Controls N-Channel MOSFETs 0.5 s Turn-Off Time Limits Peak Fault Current Wide Operating Voltage Range: 9V to 80V
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LTC4355
14-Lead
16-Lead
LTC4355,
LT4351
LTC4354
LTC4357
LTC4358
4355fc
N-CHANNEL MOSFET 30V 2A SOT-23 MON
ORing fet 48v 5a
24v in 5v 10A OUT
DE14
FDB3632
LN1351C
MBR10100
LTC4261
LTC4358
CM4Z669-LTC
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LTC4352
Abstract: lt 0210 ORing fet 48v 5a DE14 FDB3632 LN1351C MBR10100 ZENER DIODE 1.23V 7A, 100v fast recovery diode IRLR3110
Text: LTC4355 Positive High Voltage Ideal Diode-OR with Input Supply and Fuse Monitors DESCRIPTION FEATURES n n n n n n n n Replaces Power Schottky Diodes Controls N-Channel MOSFETs 0.3 s Turn-Off Time Limits Peak Fault Current Wide Operating Voltage Range: 9V to 80V
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LTC4355
14-Lead
16-Lead
LTC4355,
LTC4352
LTC4354
LTC4357
LTC4358
4355fe
LTC4352
lt 0210
ORing fet 48v 5a
DE14
FDB3632
LN1351C
MBR10100
ZENER DIODE 1.23V
7A, 100v fast recovery diode
IRLR3110
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Untitled
Abstract: No abstract text available
Text: LTC4355 Positive High Voltage Ideal Diode-OR with Input Supply and Fuse Monitors DESCRIPTION FEATURES n n n n n n n n Replaces Power Schottky Diodes Controls N-Channel MOSFETs 0.3µs Turn-Off Time Limits Peak Fault Current Wide Operating Voltage Range: 9V to 80V
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LTC4355
14-Lead
16-Lead
LTC4355,
LTC4352
LTC4354
LTC4357
LTC4358
4355fe
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Untitled
Abstract: No abstract text available
Text: LTC4355 Positive High Voltage Ideal Diode-OR with Input Supply and Fuse Monitors Description Features n n n n n n n n Replaces Power Schottky Diodes Controls N-Channel MOSFETs 0.3µs Turn-Off Time Limits Peak Fault Current Wide Operating Voltage Range: 9V to 80V
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LTC4355
LTC4355,
10-Bit
4355ff
com/LTC4355
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LTC4355CS
Abstract: F115A LTC4355IDE
Text: LTC4355 Positive High Voltage Ideal Diode-OR with Input Supply and Fuse Monitors DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ Replaces Power Schottky Diodes Controls N-Channel MOSFETs 0.5µs Turn-Off Time Limits Peak Fault Current Wide Operating Voltage Range: 9V to 80V
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LTC4355
LTC4355,
10-Bit
4355f
LTC4355CS
F115A
LTC4355IDE
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HSC4242
Abstract: No abstract text available
Text: HI-SINCERITY Spec. No. : HE6739-C Issued Date : 1994.05.18 Revised Date : 1999.08.01 Page No. : 1/3 MICROELECTRONICS CORP. HSC4242 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC4242 is designed for triple diffused planar type and high speed switching applications.
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HE6739-C
HSC4242
HSC4242
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HSCF4242
Abstract: No abstract text available
Text: HI-SINCERITY Spec. No. : HE9208-A Issued Date : 1998.07.01 Revised Date : 1999.08.01 Page No. : 1/3 MICROELECTRONICS CORP. HSCF4242 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSCF4242 is designed for triple diffused planar type and high speed switching applications.
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HE9208-A
HSCF4242
HSCF4242
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Untitled
Abstract: No abstract text available
Text: HI-SINCERITY Spec. No. : HE6739 Issued Date : 1994.05.18 Revised Date : 2004.11.19 Page No. : 1/4 MICROELECTRONICS CORP. HSC4242 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC4242 is designed for triple diffused planar type and high speed switching applications.
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HE6739
HSC4242
HSC4242
O-220
183oC
217oC
260oC
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435X
Abstract: 5082-4355 E55361 photodiode hp 1976
Text: DUAL HIGH SPEED OPTICALLY COUPLED ISOLATORS H E W L E T T ^ PACKARD C O M PO N EN T S 5082-4354 5082-4355 T E C H N IC A L D A T A A P R IL 1976 9 401.370} . O U T L IN E D R A W IN G if 90 0 5 » hp S C H E M A T IC T 435X X X X IR as * s a ; 8® l i P IN
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000V/MS
3000Vdc:
E55361)
000V//i
100ms
435X
5082-4355
E55361
photodiode hp 1976
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MPS 4355 transistor
Abstract: MPS4355 TO92-EBC
Text: IVI PNP SILICON TRANSISTOR DESCRIPTION MPS4355 is PNP silicon planar epitaxial transistor designed for AF medium power amplifiers. TO-92 EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation
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MPS4355
625mW
500nA
100mA
100nA
Oct-96
150mA
500mA
MPS 4355 transistor
TO92-EBC
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MPS 4355 transistor
Abstract: mps 1132 MPS 3019 K 3053 TRANSISTOR TO-237 MICRO 3020 transistor
Text: 6091788 MICRO ELECTRONICS CORP ~~ä5 _ * 82D 00661 DE |bGT17fifl GGGDbbl 2 | Medium Power Am plifiers and Switches X P O L A R IT Y M AXIM UM R A T IN G S CASE PN PN PN PN PN 3568 3569 3638 3638A 3641 N N P P N TO-92A TO-92A TO-92A TO-92A TO-92A 625 625 625
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OCR Scan
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bGT17fifl
O-92A
MPS 4355 transistor
mps 1132
MPS 3019
K 3053 TRANSISTOR
TO-237 MICRO
3020 transistor
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2N5108
Abstract: RF NPN POWER TRANSISTOR 2 WATT 2 GHZ TRANSISTOR C-111 M MOTOROLA 2N5108
Text: MOTOROLA SEM IC O N D U CTO R TECHNICAL DATA The RF Line 1.0 W - 1 GHz HIGH FREQUENCY TRANSISTOR NPN SILIC O N NPN SILICON HIGH-FREQUENCY TRANSISTOR . . designed fo r am plifier, frequency m u ltip lie r, or oscillator applica tions in m ilita ry and industrial equipm ent. Suitable fo r use as outp ut,
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OCR Scan
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2N5108
2N5108
RF NPN POWER TRANSISTOR 2 WATT 2 GHZ
TRANSISTOR C-111 M
MOTOROLA 2N5108
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B1335A
Abstract: D2033A D1855A D2037 B1186A 2SC457 2sb1335a d2038 B 1186a B1085A
Text: 1 rarisiston, ¡ m m • Power Transistors • TQ-220, TO-22QFP, HRT Types Vctc C O LLE CTOR TO EMITTER VOLTAGE V 60 50 T 100 120 200 160 300 0 1 400 2SC4505 PSD 1562 15 ■ 2S D 1562A 2SB 1085 2S B 1085A 2S D 1763 | 2SD 1763A 2SB 1186 | 2SB 1186A 2SD 2033
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OCR Scan
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TQ-220,
O-22QFP,
2SC4505
SDp901'
2SC4354
2SD2061
2SB1496
2SB1334"
2SC457
2SA1634
B1335A
D2033A
D1855A
D2037
B1186A
2sb1335a
d2038
B 1186a
B1085A
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Untitled
Abstract: No abstract text available
Text: PD- 9.1470E International I R Rectifier IRG4PC50U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
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OCR Scan
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1470E
IRG4PC50U
O-247AC
5545E
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