HP506
Abstract: HFA-0002 HFA7-0002-5
Text: HARRIS SEPIICOND SECTOR fH blE D 430B571 D04b777 5 ^ HFA-0002 H A R R IS S E M I C O N D U C T O R Low Noise Wideband Operational Amplifier March 1993 Features Description • Wide Gain Bandwidth Product. . . . . . 1GHz • High Slew Rate .250V /H S .
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430B571
D04b777
HFA-0002
05V/mV
HFA-0002
100ns.
HFA-0002,
HP506
HFA7-0002-5
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HA-OP27
Abstract: No abstract text available
Text: HARRIS SEMICOND SECTOR 11 '4302271 HARRIS SEMICOND SECTOR 77C 03676 F 3 3 H A R R d E 4302271 □OOflt.Tb 3 |~~ D ' T-79-06-10 HA-OP I S PRELIMINARY Ultra-Low Noise, Precision Operational Amplifier Features Applications • H ig h S le w R a t e . 10 V/jUS
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T-79-06-10
4305E71
HA-OP27
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Untitled
Abstract: No abstract text available
Text: HA RR IS S E M I C O N D SE CT OR 3Q H SfiE D A R R IS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL234 D, R, H • M 3 Q E 27 1 D O M S b T H ÖTT H H A S ZN/Z7ÖU, 2N7278H 2N7278H Radiation Hardened N-Channel Power MOSFETs December 1992
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FRL234
2N7278H
2N7278H
100KRAD
300KRAD
1000KRAD
3000KRAD
430B571
2N7278D,
2N7278R,
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Untitled
Abstract: No abstract text available
Text: • 4302271 0054003 33 H A R R IS 2 77 ■ HAS IRF610/611/612/613 IRF61 OR/611R/612R/613R N-Channel Power MQSFETs Avalanche Energy Rated* August 1991 Features Package T0 -22 0A B TOP VIEW • 2.6A and 3.3A, 150V - 200V • ros on = 1-5 i i and 2 -4 ii • Single Pulse Avalanche Energy Rated*
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IRF610/611/612/613
IRF61
OR/611R/612R/613R
IRF610,
IRF611,
IRF612,
IRF610R,
IRF611R,
IRF612R
F613R
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Untitled
Abstract: No abstract text available
Text: HARRIS SEIUCOND SECTOR ÊS « a SÔE D • 43G2271 QÜ44375 STT « H A S HCTS374MS « Radiation Hardened Octal D-Type Flip-Flop, Tri-State, Positive Edge Triggered December 1992 20 PIN CERAMIC DUAL-IN-LINE MIL-STD-1835 DESIGNATOR CDIP2-T20, LEAD FINISH C
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43G2271
HCTS374MS
MIL-STD-1835
CDIP2-T20,
HCTS374MS
10sA/cm2
100nm
100nm
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