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    NEC Electronics Group UPD42S18160-60

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    42S18160 Datasheets Context Search

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    IC-3217

    Abstract: PD42S18160 NEC 4216160 UPD4218160G5-50
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD42S16160, 4216160, 42S18160, 4218160 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The µPD42S16160, 4216160, 42S18160, 4218160 are 1,048, 576 words by 16 bits CMOS dynamic RAMs. The


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    PDF PD42S16160, 42S18160, 16-BIT, 42S18160 50-pin 42-pin 495robots IC-3217 PD42S18160 NEC 4216160 UPD4218160G5-50

    uPD4216160L

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD42S16160L, 4216160L, 42S18160L, 4218160L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The µPD42S16160L, 4216160L, 42S18160L, 4218160L are 1,048, 576 words by 16 bits CMOS dynamic RAMs.


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    PDF PD42S16160L, 4216160L, 42S18160L, 4218160L 16-BIT, 4218160L uPD4216160L

    UPD42S18160G5-70-7-JF

    Abstract: UPD42S18160G5707JF uPD42S18160-50 UPD4216160G uPD42S18160G5-50-7JF UPD4216160G5-50 PD42S18160-60 UPD42S18160G5-60-7JF NEC 4216160 UPD4218160G5-80-7JF
    Text: DATA SHEET / MOS INTEGRATED CIRCUIT / PD42S16160,4216160,42S18160,4218160 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE D e s c rip tio n The /xPD42S16160, 4216160, 42S18160, 4218160 are 1,048, 576 words by 16 bits CMOS dynamic RAMs. The


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    PDF uPD42S16160 uPD4216160 uPD42S18160 uPD4218160 16-BIT, /xPD42S16160, 42S18160, PD42S16160, 42S18160 50-pin UPD42S18160G5-70-7-JF UPD42S18160G5707JF uPD42S18160-50 UPD4216160G uPD42S18160G5-50-7JF UPD4216160G5-50 PD42S18160-60 UPD42S18160G5-60-7JF NEC 4216160 UPD4218160G5-80-7JF

    NEC 4216160

    Abstract: No abstract text available
    Text: MOS INTEGRATED CIRCUIT f iPD42S16160,4216160,42S18160,4218160 16 M -BIT DYNAM IC RAM 1 M -W ORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The mPD42S16160, 4216160, 42S18160, 4218160 are 1 048 576 words by 16 bits dynamic CMOS RAMs. These differ in refresh cycle and the /iPD42S16160, 42S18160 can execute CAS before RAS self refresh (see


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    PDF uPD42S16160 uPD4216160 uPD42S18160 uPD4218160 16-BIT, 42S16160, 42S18160, /iPD42S16160, 42S18160 50-pin NEC 4216160

    Untitled

    Abstract: No abstract text available
    Text: N EC MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ _ HPD42S16160L, 4216160L, 42S18160L, 4218160L 3.3 V OPERATION 16M-BIT DYNAMIC RAM 1M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The fiPD42S16160L, 4216160L, 42S18160L, 4218160L are 1 048 576 w o rd s by 16 bits d yn a m ic CMOS RAMs.


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    PDF uPD42S16160L uPD4216160L uPD42S18160L uPD4218160L 16M-BIT 16-BIT, fiPD42S16160L, 4216160L, 42S18160L, 4218160L

    EZ 929

    Abstract: S1616
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ _ //¿PD42S16160L, 4216160L, 42S18160L, 4218160L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-W ORD B Y 16-BIT, FA ST P A G E M ODE, B Y T E READ/WRITE M O D E D escrip tion T h e ¿ iP D 4 2 S 1 6 1 6 0 L , 4 2 1 6 1 6 0 L , 4 2 S 1 6 1 6 0 L , 4 2 1 8 1 6 0 L a re 1,048, 576 w ord s by 16 b its C M O S d y n a m ic R A M s .


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    PDF uPD42S16160L uPD4216160L uPD42S18160L uPD4218160L 16-BIT, S16160L, IR35-207-3 P15-207-3 EZ 929 S1616

    IC-321B

    Abstract: p421e P421E-400A
    Text: DATA SHEET / MOS INTEGRATED CIRCUIT jUPD42S16160L, 4216160L, 42S18160L, 4218160L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description T h e ^ P D 4 2 S 1 6 1 6 0 L , 4216160L, 42S 18 1 6 0 L , 4 2 1 8 1 6 0 L are 1,048, 576 w ords by 16 bits C M O S dyna m ic RAMs.


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    PDF uPD42S16160L uPD4216160L uPD42S18160L uPD4218160L 16-BIT, 4216160L, 50-pin 42-pin VP15-207-2 IC-321B p421e P421E-400A

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET / MOS INTEGRATED CIRCUIT //PD42S16160L, 4216160L, 42S18160L, 4218160L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The ¿¡PD42S16160L, 4216160L, 42S18160L, 4218160Lare 1,048, 576 words by 16 bits CMOS dynamic RAMs.


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    PDF uPD42S16160L uPD4216160L uPD42S18160L uPD4218160L 16-BIT, PD42S16160L, 4216160L, 42S18160L, 4218160Lare

    3217b

    Abstract: NEC 4216160 4216160 IC-3217B 4218160
    Text: DATA SHEET MOS INTEGRATED CIRCUIT /¿PD42S16160,4216160,42S18160,4218160 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE D escription The /iPD42S16160, 4216160, 42S18160, 4218160 are 1 048 576 words by 16 bits dynamic CMOS RAMs.


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    PDF uPD42S16160 uPD4216160 uPD42S18160 uPD4218160 16-BIT, /iPD42S16160, 42S18160, PD42S16160, 42S18160 50-pin 3217b NEC 4216160 4216160 IC-3217B 4218160

    TPS 436 IRA

    Abstract: IC-3218B
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT fiPD42S16160L, 4216160L, 42S18160L, 4218160L 3.3 V OPERATION 16M-BIT DYNAMIC RAM 1M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The iiPD42S16160Lr 4216160L, 42S18160L, 4218160L are 1 048 576 words by 16 bits dynamic CMOS RAMs.


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    PDF uPD42S16160L uPD4216160L uPD42S18160L uPD4218160L 16M-BIT 16-BIT, iiPD42S16160Lr 4216160L, 42S18160L, 4218160L TPS 436 IRA IC-3218B

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-42S2000LAD32S SERIES 2M -WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-42S2000LAD32S series is a 2 097 152 words by 32 bits dynamic RAM module Small Outline DIMM on which 4 pieces of 16M DRAM ( uPD 42S18160L) are assembled.


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    PDF MC-42S2000LAD32S 32-BIT 42S18160L) 11111111ITTTTT

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MC-42S1000LAD32S SERIES 1M -WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-42S1000LAD32S series is a 1 048 576 wor/js by 32 bits dynamic RAM module Small Outline DIMM on which 2 pieces of 16M DRAM ( uPD 42S18160L) are assembled.


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    PDF MC-42S1000LAD32S 32-BIT 42S18160L) 0Q557bl b427S25

    NEC 4216160

    Abstract: No abstract text available
    Text: M O S INTEGRATED CIRCUIT ju P D 4 2 S 16 1 6 0 ,4 2 1 6 1 6 0 ,4 2 S 1 8 1 6 0 ,4 2 18 16 0 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The fiPD42S16160, 4216160, 42S18160, 4218160 are 1 048 576 w ords by 16 bits dynam ic CM O S RAMs.


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    PDF 16-BIT, uPD42S16160 uPD4216160 uPD42S18160 uPD4218160 42S18160 50-pin 42-pin /tPD42S16160, NEC 4216160

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS iv iv w iINTEGRATED m I •i n I u l / CIRCUIT v ii tv w I I r HPD42S16160L, 4216160L, 42S18160L, 4218160L 3.3 V OPERATION 16M-BIT DYNAMIC RAM 1M -W 0R D BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The fiPD42S16160L, 4216160L, 42S18160L, 4218160L are 1 048 576 w o rd s by 16 bits d ynam ic C M O S RAM s.


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    PDF HPD42S16160L, 4216160L, 42S18160L, 4218160L 16M-BIT 16-BIT, fiPD42S16160L, 4218160L

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS 11 INTEGRATED n I Li I i n I b. vCIRCUIT i i i v v i I iv iv w r iiPD42S16160L, 4216160L. 42S18160L, 4218160L 3.3 V OPERATION 16M-BIT DYNAMIC RAM 1M -W 0R D BY 16-BIT, FAST PAGE MODE, BYTE RE AD/W RITE MODE DESCRIPTION The /1PD42S16160L, 4216160L, 42S18160L, 4218160L are 1 048 576 words by 16 bits dynamic CMOS RAMs.


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    PDF uPD42S16160L uPD4216160L uPD42S18160L uPD4218160L 16M-BIT 16-BIT, /1PD42S16160L, 4216160L, 42S18160L, 4218160L

    4218160LE-60

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD 42S18160, 4 2 1 8 1 6 0 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The ,42S18160, 4218160 are 1,048, 576 words by 16 bits CMOS dynamic RAMs. The fast page mode and


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    PDF 42S18160, 16-BIT, uPD42S18160 PD42S18160 50-pin 42-pin 4218160LE-60

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET f MOS INTEGRATED CIRCUIT fiP D 4 2 S1 S1 6 0 ,4 21 6 16 0 ,4 2 S1 8 1 6 0 ,4218160 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The juPD42S16160, 4216160, 42S18160, 4218160 are 1 048 576 words by 16 bits dynam ic CM OS RAMs.


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    PDF 16-BIT, juPD42S16160 42S18160, 42S18160 50-pin 42-pin iPD42S16160, /1PD42S16160

    42S16160

    Abstract: 16160G NEC 4216160
    Text: _ DATA SHEET_ _ / MOS INTEGRATED CIRCUIT ^PD42S16160,4216160,42S18160,4218160 16 M-BIT DYNAMIC BAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE D escription The f/PD42S16160, 4216160, 42S18160, 4218160 are 1 048 576 words by 16 bits dynamic CMOS RAM s.


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    PDF uPD42S16160 uPD4216160 uPD42S18160 uPD4218160 16-BIT, f/PD42S16160, 42S18160, PD42S16160 42S18160 50-pin 42S16160 16160G NEC 4216160

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MC-42S2000LAD32S SERIES 2M -WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-42S2000LAD32S series Is a 2 097152 words by 32 bits dynamic RAM module Small Outline DIMM on which 4 pieces of 16M DRAM ( uPD 42S18160L) are assembled.


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    PDF MC-42S2000LAD32S 32-BIT 42S18160L) 42S2000LAD32S-60

    d4218160

    Abstract: H1311 4218160LG 5-A70
    Text: NEC MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ mPD42S16160L, 4216160L, 42S18160L, 421816QL 3.3 V OPERATION 16M-BIT DYNAMIC RAM 1M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The MPD42S16160L, 4216160L, 42S18160L, 4218160L are 1 048 576 w o rd s by 16 bits d yn a m ic CMOS RAMs.


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    PDF uPD42S16160L uPD4216160L uPD42S18160L uPD4218160L 16M-BIT 16-BIT, MPD42S16160L, 4216160L, 42S18160L, 4218160L d4218160 H1311 4218160LG 5-A70

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-42S1000LAD32S SERIES 1M -WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-42S1000LAD32S series is a 1 048 576 worjds by 32 bits dynamic RAM module Small Outline DIMM on which 2 pieces of 16M DRAM ( uPD 42S18160L) are assembled.


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    PDF MC-42S1000LAD32S 32-BIT 42S18160L) 42S1000LAD32S-\\\\\\\\\

    D42S18160

    Abstract: d42s181 D42S1816 UPD42S18160LG5A-60
    Text: D A T A SHEET / MOS INTEGRATED CIRCUIT /¿ P D 4 2 S 1 6 1 6 0 L , 4 2 1 6 1 6 0 L. 4 2 S 1 8 1 6 0 L , 4 2 1 8 1 6 0 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /¿PD42S16160L, 4216160L, 4 2S 18160L, 4 2 18160L are 1,048, 576 w ords by 16 bits CMOS dynam ic RAMs.


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    PDF 16-BIT, uPD42S16160L uPD4216160L uPD42S18160L uPD4218160L PD42S16160L, 18160L 50-pin 42-pin D42S18160 d42s181 D42S1816 UPD42S18160LG5A-60

    Untitled

    Abstract: No abstract text available
    Text: fjPD421x160/L, 42S1x160/L x = 6, 7, 8 1,048,576 x 16-Bit Dynamic CMOS RAM ¿ Y fiW NEC Electronics Inc. Description T he devices listed below are fast-page dynam ic RAMs organized as 1M words by 16 bits and designed to o p e ra te from a single power supply. O ptional features


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    PDF fjPD421x160/L, 42S1x160/L 16-Bit 4218/42S18, 4217/42S17, l/09-l/01e fiPD421X160/L, 83RO-74748 St-37

    Untitled

    Abstract: No abstract text available
    Text: blE D bM2752S 0034G34 I TflM « N E C E NEC Electronics Inc. N E C E L E C T R O N I C S INC Description T he devices listed below are fast-page dynam ic RAMs organized as 1M words by 16 bits and designed to o p e ra te from a single pow er supply. O ptional features


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    PDF bM2752S 0034G34 42S16160 42S17160 42S18160 4217/42S17, WD-747W jjPD421 160/L, 160/L