Untitled
Abstract: No abstract text available
Text: Barrier Block Accessories Fanning Strips Catalog Numbers and Dimensions for Fanning Strips for 140 Series Terminal Blocks Straight Type Dimensions Catalog No. 6-160B-R Catalog No. 6-160-R Ordering Information No. of Terminals 2 3 4 5 6 7 8 9 10 11 12 13 14
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6-160B-R
6-160-R
2-160-R
3-160-R
4-160-R
5-160-R
7-160-R
8-160-R
9-160-R
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DC-37PTI
Abstract: ms24266r bacc63bn LGA 478 SOCKET PIN LAYOUT 94v-0 lcd display BACC45 BACC63CB bacc10gh BACC63BV MIL-C-27500
Text: Catalog No. C-865 CIN:APSE High Speed Interconnect Technology CIN:APSE ® FEATURES High-Speed Interconnect Technology • High signal speed capability enabling frequencies greater than 20 GHz. ■ Z-Axis, solderless, compression mount interconnect system.
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Original
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PDF
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C-865
UT-304
FCT-551
FCT-552
DC-37PTI
ms24266r
bacc63bn
LGA 478 SOCKET PIN LAYOUT
94v-0 lcd display
BACC45
BACC63CB
bacc10gh
BACC63BV
MIL-C-27500
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5-176-3 terminal block
Abstract: mini circuits 15542 MS14141 DIN 18541 8-32X3 s31512 mini 15542 P-306-CCE 5-140-Y E61245
Text: COMMERCIAL Barrier Blocks Circular Mini DIN BNC Jones Plugs Edge Connectors Commercial [.050” 1.27mm Density Solder Introduction Cup/Wire D-Microminiature] Cinch Commercial Products, consisting of Jones Plugs and Sockets, Barrier Blocks, Edge Cards, Two-Piece Commercial Dins,
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DIN 41529
Abstract: bacc10 MIL-C-83513 connector BACC45FT BACC10GH BACC45FN S2402D PTI 30 040 ga BACC45FM cd 1191 acb
Text: Catalog No. C-865 CIN:APSE High Speed Interconnect Technology CIN:APSE ® FEATURES High-Speed Interconnect Technology • High signal speed capability enabling frequencies greater than 20 GHz. ■ Z-Axis, solderless, compression mount interconnect system.
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Original
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PDF
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C-865
UT-304
FCT-551
FCT-552
DIN 41529
bacc10
MIL-C-83513 connector
BACC45FT
BACC10GH
BACC45FN
S2402D
PTI 30 040 ga
BACC45FM
cd 1191 acb
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BACC63CB
Abstract: bacc63bv m32029 BACC45 BACC45FT M22759/33-26-9 BACC45FN BACC63BP MIL-C-39029/31 Cinch Connectors bacc45ft
Text: Catalog No. C-865 CIN:APSE High Speed Interconnect Technology CIN:APSE ® FEATURES High-Speed Interconnect Technology • High signal speed capability enabling frequencies greater than 20 GHz. ■ Z-Axis, solderless, compression mount interconnect system.
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Original
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PDF
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C-865
UT-304
FCT-551
FCT-552
BACC63CB
bacc63bv
m32029
BACC45
BACC45FT
M22759/33-26-9
BACC45FN
BACC63BP
MIL-C-39029/31
Cinch Connectors bacc45ft
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Untitled
Abstract: No abstract text available
Text: DURA-CON Barrier Blocks High Reliability Accessories All-Plastic Solder Terminals 3/4W, Y, and W Optional Terminals for use with Cinch terminal blocks. See chart for type and dimensions. Below 2 Ordering Information "3/4 W" Terminals - Dimensions Catalog
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Original
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3/4W-140
3/4W-141
3/4W-142
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D42S18160
Abstract: d42s181 D42S1816 UPD42S18160LG5A-60
Text: D A T A SHEET / MOS INTEGRATED CIRCUIT /¿ P D 4 2 S 1 6 1 6 0 L , 4 2 1 6 1 6 0 L. 4 2 S 1 8 1 6 0 L , 4 2 1 8 1 6 0 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /¿PD42S16160L, 4216160L, 4 2S 18160L, 4 2 18160L are 1,048, 576 w ords by 16 bits CMOS dynam ic RAMs.
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16-BIT,
uPD42S16160L
uPD4216160L
uPD42S18160L
uPD4218160L
PD42S16160L,
18160L
50-pin
42-pin
D42S18160
d42s181
D42S1816
UPD42S18160LG5A-60
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NEC 4216160
Abstract: No abstract text available
Text: MOS INTEGRATED CIRCUIT f iPD42S16160,4216160,42S18160,4218160 16 M -BIT DYNAM IC RAM 1 M -W ORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The mPD42S16160, 4216160, 42S18160, 4218160 are 1 048 576 words by 16 bits dynamic CMOS RAMs. These differ in refresh cycle and the /iPD42S16160, 42S18160 can execute CAS before RAS self refresh (see
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uPD42S16160
uPD4216160
uPD42S18160
uPD4218160
16-BIT,
42S16160,
42S18160,
/iPD42S16160,
42S18160
50-pin
NEC 4216160
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD4 2 S 1 8 1 6 0 L , 4 2 1 8 1 6 0 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE The ,18160L, 18160L are 1,048, 576 words by 16 bits CMOS dynamic RAMs. The fast page mode and
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OCR Scan
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PDF
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16-BIT,
uPD42S18160L
4218160L
PD42S18160L
50-pin
42-pin
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Untitled
Abstract: No abstract text available
Text: N EC MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ _ HPD42S16160L, 4216160L, 18160L, 18160L 3.3 V OPERATION 16M-BIT DYNAMIC RAM 1M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The fiPD42S16160L, 4216160L, 18160L, 18160L are 1 048 576 w o rd s by 16 bits d yn a m ic CMOS RAMs.
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uPD42S16160L
uPD4216160L
uPD42S18160L
uPD4218160L
16M-BIT
16-BIT,
fiPD42S16160L,
4216160L,
42S18160L,
4218160L
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EZ 929
Abstract: S1616
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ _ //¿PD42S16160L, 4216160L, 18160L, 18160L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-W ORD B Y 16-BIT, FA ST P A G E M ODE, B Y T E READ/WRITE M O D E D escrip tion T h e ¿ iP D 4 2 S 1 6 1 6 0 L , 4 2 1 6 1 6 0 L , 4 2 S 1 6 1 6 0 L , 4 2 1 8 1 6 0 L a re 1,048, 576 w ord s by 16 b its C M O S d y n a m ic R A M s .
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uPD42S16160L
uPD4216160L
uPD42S18160L
uPD4218160L
16-BIT,
S16160L,
IR35-207-3
P15-207-3
EZ 929
S1616
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IC-321B
Abstract: p421e P421E-400A
Text: DATA SHEET / MOS INTEGRATED CIRCUIT jUPD42S16160L, 4216160L, 18160L, 18160L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description T h e ^ P D 4 2 S 1 6 1 6 0 L , 4216160L, 42S 18 1 6 0 L , 4 2 1 8 1 6 0 L are 1,048, 576 w ords by 16 bits C M O S dyna m ic RAMs.
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uPD42S16160L
uPD4216160L
uPD42S18160L
uPD4218160L
16-BIT,
4216160L,
50-pin
42-pin
VP15-207-2
IC-321B
p421e
P421E-400A
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Untitled
Abstract: No abstract text available
Text: DATA SHEET / MOS INTEGRATED CIRCUIT //PD42S16160L, 4216160L, 18160L, 18160L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The ¿¡PD42S16160L, 4216160L, 18160L, 18160Lare 1,048, 576 words by 16 bits CMOS dynamic RAMs.
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OCR Scan
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PDF
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uPD42S16160L
uPD4216160L
uPD42S18160L
uPD4218160L
16-BIT,
PD42S16160L,
4216160L,
42S18160L,
4218160Lare
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TPS 436 IRA
Abstract: IC-3218B
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT fiPD42S16160L, 4216160L, 18160L, 18160L 3.3 V OPERATION 16M-BIT DYNAMIC RAM 1M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The iiPD42S16160Lr 4216160L, 18160L, 18160L are 1 048 576 words by 16 bits dynamic CMOS RAMs.
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PDF
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uPD42S16160L
uPD4216160L
uPD42S18160L
uPD4218160L
16M-BIT
16-BIT,
iiPD42S16160Lr
4216160L,
42S18160L,
4218160L
TPS 436 IRA
IC-3218B
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Untitled
Abstract: No abstract text available
Text: b427525 0042323 TbS » N E C E f MOS INTEGRATED C IR CU IT H / P D 4 2 S 1 6 1 6 L , 4 2 S 1 7 1 6 L , 4 2 S 1 8 1 6 L 16 M BIT D Y N A M IC RAM 3 .3 V FAST PAGE M O D E & BYTE R E A D /W R IT E M O DE -P R E L IM IN A R Y -D ESCRIPTIO N
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b427525
PD42S16160L,
PD42S17160L
/zPD42S18160L
P32VF-100-475A
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42S18160
Abstract: NEC 4216160
Text: M O S INTEGRATED CIRCU IT juPD42S16160,4216160,42S18160,4218160 16 M BIT DYNAM IC RAM 1 M-WORD BY 16-BIT, FA ST PAGE M ODE, B YTE REA D /W RITE M ODE DESCRIPTION T h e /IPD 42S16160, 4216160, 42S1816 0, 4218160 are 1 048 576 w o rd s b y 16 bits d yn a m ic C M O S R A M s.
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uPD42S16160
uPD4216160
uPD42S18160
uPD4218160
16-BIT,
42S16160,
42S1816
PD42S16160,
42S18160
50-pin
NEC 4216160
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NEC 4216160
Abstract: No abstract text available
Text: M O S INTEGRATED CIRCUIT ju P D 4 2 S 16 1 6 0 ,4 2 1 6 1 6 0 ,4 2 S 1 8 1 6 0 ,4 2 18 16 0 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The fiPD42S16160, 4216160, 42S18160, 4218160 are 1 048 576 w ords by 16 bits dynam ic CM O S RAMs.
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OCR Scan
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PDF
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16-BIT,
uPD42S16160
uPD4216160
uPD42S18160
uPD4218160
42S18160
50-pin
42-pin
/tPD42S16160,
NEC 4216160
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51w18160
Abstract: No abstract text available
Text: HM51W16160 Series HM51W18160 Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-635A Z Rev. 1.0 Sep. 30, 1996 Description The Hitachi HM51W16160 Series, HM51W18160 Series are CMOS dynamic RAMs organized as 1,048,576-word X 16-bit. They employ the most advanced CMOS technology for high performance and
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HM51W16160
HM51W18160
1048576-word
16-bit
ADE-203-635A
576-word
16-bit.
51w18160
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS iv iv w iINTEGRATED m I •i n I u l / CIRCUIT v ii tv w I I r HPD42S16160L, 4216160L, 18160L, 18160L 3.3 V OPERATION 16M-BIT DYNAMIC RAM 1M -W 0R D BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The fiPD42S16160L, 4216160L, 18160L, 18160L are 1 048 576 w o rd s by 16 bits d ynam ic C M O S RAM s.
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HPD42S16160L,
4216160L,
42S18160L,
4218160L
16M-BIT
16-BIT,
fiPD42S16160L,
4218160L
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿18160L, 18160L 3.3 V OPERATION 16 M BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The ^18160L, 18160L are 1,048,576 words by 16 bits CMOS dynamic RAMs. The fast page mode
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PDF
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uPD42S18160L
uPD4218160L
16-BIT,
PD42S18160L,
4218160L
iPD42S18160L
50-pin
42-pin
JJPD42S18160L-A70,
4218160L-A
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ic 321
Abstract: No abstract text available
Text: NEC / DATA SHEET MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ / „PD42S16160L, 4216160L, 18160L, 18160L 3.3 V OPERATION 16M-BIT DYNAM IC RAM 1M-W ORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /¿PD42S16160L, 4216160L, 18160L, 18160L are 1 048 576 w o rd s by 16 bits d yn a m ic CMOS RAMs.
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OCR Scan
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PDF
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uPD42S16160L
uPD4216160L
uPD42S18160L
uPD4218160L
16M-BIT
16-BIT,
PD42S16160L,
4216160L,
42S18160L,
4218160L
ic 321
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NEC uPD 833
Abstract: NEC 4216160
Text: NEC / DATA SHEET MOS INTEGRATED CIRCUIT _ ^uPD42S16160,4216160,42S18160,4218160 1 6 M - B IT D Y N A M IC R A M 1 M -W O R D B Y 1 6 -B IT , F A S T P A G E M O D E , B Y T E R E A D / W R IT E M O D E Description T h e ^ P D 4 2 S 1 6 1 6 0 , 4 2 1 6 1 6 0 , 4 2 S 1 8 1 6 0 , 4 2 1 8 1 6 0 a re 1 ,0 4 8 , 5 7 6 w o rd s b y 16 b its C M O S d yn a m ic R A M s. T h e
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uPD42S16160
uPD4216160
uPD42S18160
uPD4218160
50-pin
42-pin
VP15-207-2
NEC uPD 833
NEC 4216160
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS 11 INTEGRATED n I Li I i n I b. vCIRCUIT i i i v v i I iv iv w r iiPD42S16160L, 4216160L. 18160L, 18160L 3.3 V OPERATION 16M-BIT DYNAMIC RAM 1M -W 0R D BY 16-BIT, FAST PAGE MODE, BYTE RE AD/W RITE MODE DESCRIPTION The /1PD42S16160L, 4216160L, 18160L, 18160L are 1 048 576 words by 16 bits dynamic CMOS RAMs.
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OCR Scan
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PDF
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uPD42S16160L
uPD4216160L
uPD42S18160L
uPD4218160L
16M-BIT
16-BIT,
/1PD42S16160L,
4216160L,
42S18160L,
4218160L
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M1314
Abstract: PD42S18160 4218160LE-60
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT //PD42S18160, 4218160 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /¿PD42S18160, 4218160 are 1,048,576 words by 16 bits CMOS dynamic RAMs. The fast page mode and byte read/write mode capability realize high speed access and low power consumption.
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OCR Scan
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PDF
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16-BIT,
uPD42S18160
uPD4218160
PD42S18160
50-pin
42-pin
PD42S18160-60,
PD42S18160-70,
M1314
4218160LE-60
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