4623A
Abstract: K311 LE-60 GD34063
Text: blE » • b427525 0D34G75 flìfl «NECE jiPD421x180/L, 42S1x180/L x = 6, 7, 8 NEC Electronics Inc. 1,048,576 x 18-Bit Dynamic CMOS RAM _N E C ELECTRONICS INC 7~~ '¿U-l# W M li W Description The devices listed below are fast-page dynamic RAMs
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uPD421x180/L
uPD42S1x180/L
18-Bit
42S16180
42S17180
42S18180
For75BS
0D3410fl
pPD421x180/L,
42S1x180/L
4623A
K311
LE-60
GD34063
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6623A
Abstract: No abstract text available
Text: 4k / X V * fjPD421x180/L, 42S1x180/L x = 6, 7, 8 1,048,576 x 18-Bit Dynamic CMOS RAM [M IL V NEC Electronics Inc. Description Fo r th e 4 2 1 7/4 2 S 1 7, RAS o n ly refresh cy cles a n d n o rm al re a d or w r ite cy cles on th e 2 0 4 8 a d d re s s c o m b in a tio n s
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uPD421x180/L
uPD42S1x180/L
18-Bit
pPD421x180/L,
42S1X180/L
juPD421x180/L
jjPD421x
180/L,
42S1x
6623A
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LA80P
Abstract: marking 80L
Text: b427525 0042407 Tbb « N E C E MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 1 8 0 L , 4 2 S 1 7 1 8 0 L , 4 2 S 1 8 1 8 0 L 16 M BIT D Y N A M IC RAM 3 .3 V FAST PAGE M O DE & BYTE R E A D /W R IT E M O DE -PRELIMINARY-DESCRIPTION The NEC ^PD42S16180L, u 42S17180L and n PD42S18170L are 1 048 576 words by 18 b its
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b427525
uPD42S16180L
uPD42S17180L
uPD42S18170L
475mil)
P32VF-100-475A
P32VF-100-475A
LA80P
marking 80L
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5M21
Abstract: No abstract text available
Text: 4 k /X V * Í \ £ W NEC Electronics Inc. íiPD421x180/L, 42S1X180/L x = 6, 7, 8 1,048,576 x 18-Bit Dynamic CMOS RAM Description The devices listed below are fast-page dynam ic RAMs organized as 1M words by 18 bits and designed to o perate from a single power supply. O ptional features
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iPD421x180/L,
42S1X180/L
18-Bit
42S16180
42S17180
42S18180
4217/42S17,
pPD421x180/L,
5M21
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