PE4210
Abstract: No abstract text available
Text: Advance Information PE4210 SPDT Low Insertion Loss MOSFET RF Switch Features • Single 3.0 V Power Supply • Low Insertion loss: . 39dB at 1 GHz, .42dB at 2 GHz • High isolation of 32 dB at 1 GHz, 26 dB at 2 GH • Typical1 dB compression = +10dBm • CMOS logic control
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PE4210
10dBm
PE4210
50MHz
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Untitled
Abstract: No abstract text available
Text: TGF2023-2-10 50 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Frequency Range: DC - 18 GHz 46.7 dBm Nominal PSAT at 3 GHz 60% Maximum PAE 17.5 dB Nominal Power Gain at 3 GHz
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TGF2023-2-10
TQGaN25
TGF2023-2-10
DC-18
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PE4210
Abstract: PE4210-EK
Text: PRELIMINARY SPECIFICATION PE4210 SPDT Low Insertion Loss MOSFET RF Switch Product Description The PE4210 Low Insertion Loss MOSFET RF Switch is designed to cover a broad range of uses in the 10 MHz through 2.5 GHz frequency range. This switch integrates on-board CMOS control logic and eliminates the need for
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PE4210
PE4210
PE4210-EK
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tgf2023-2-05
Abstract: No abstract text available
Text: TGF2023-2-05 25 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 18 GHz 43.9 dBm Nominal PSAT at 3 GHz 62% Maximum PAE
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TGF2023-2-05
TQGaN25
TGF2023-2-05
DC-18
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Untitled
Abstract: No abstract text available
Text: TGF2023-2-02 12 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 18 GHz 41 dBm Nominal PSAT at 3 GHz 64% Maximum PAE
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TGF2023-2-02
TQGaN25
TGF2023-2-02
DC-18
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PE4210-08MSOP-50A
Abstract: marking 8C PE4210 PE4210-08MSOP-2000C PE4210-EK
Text: PRODUCT SPECIFICATION PE4210 SPDT Low Insertion Loss MOSFET RF Switch Product Description The PE4210 SPDT MOSFET RF Switch is designed to cover a broad range of applications from DC to 3.0 GHz. This single-supply switch integrates on-board CMOS control logic driven by a simple, single-pin CMOS or TTL
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PE4210
PE4210
PE4210-08MSOP-50A
marking 8C
PE4210-08MSOP-2000C
PE4210-EK
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Untitled
Abstract: No abstract text available
Text: Product Specification PE4210 SPDT UltraCMOS RF Switch 10 MHz - 3 GHz Product Description The PE4210 UltraCMOS™ RF Switch is designed to cover a broad range of applications from 10 MHz to 3 GHz. This singlesupply switch integrates on-board CMOS control logic driven
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PE4210
PE4210
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PE4210
Abstract: PE4210-08MSOP-2000C PE4210-08MSOP-50A PE4210-EK
Text: PRODUCT SPECIFICATION PE4210 SPDT Low Insertion Loss MOSFET RF Switch Product Description The PE4210 SPDT MOSFET RF Switch is designed to cover a broad range of applications from DC to 3.0 GHz. This single-supply switch integrates on-board CMOS control logic driven by a simple, single-pin CMOS or TTL
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PE4210
PE4210
PE4210-08MSOP-2000C
PE4210-08MSOP-50A
PE4210-EK
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tgf2023-2-20
Abstract: No abstract text available
Text: TGF2023-2-20 90 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 18 GHz 49.6 dBm Nominal PSAT at 3 GHz 58% Maximum PAE
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TGF2023-2-20
TQGaN25
TGF2023-2-20
DC-18
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Untitled
Abstract: No abstract text available
Text: Product Specification PE4210 SPDT UltraCMOS RF Switch 10 MHz - 3 GHz Product Description The PE4210 UltraCMOS™ RF Switch is designed to cover a broad range of applications from 10 MHz to 3 GHz. This singlesupply switch integrates on-board CMOS control logic driven
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PE4210
PE4210
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Untitled
Abstract: No abstract text available
Text: Product Specification PE4210 SPDT UltraCMOS RF Switch 10 MHz - 3 GHz Product Description The PE4210 UltraCMOS™ RF Switch is designed to cover a broad range of applications from 10 MHz to 3 GHz. This singlesupply switch integrates on-board CMOS control logic driven
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PE4210
PE4210
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PE4210G-08MSOP-50A
Abstract: PE4210 PE4210-08MSOP-2000C PE4210-08MSOP-50A PE4210-EK PE4210G-08MSOP-2000C
Text: Product Specification PE4210 SPDT UltraCMOS RF Switch DC - 3000 MHz Product Description The PE4210 UltraCMOS™ RF Switch is designed to cover a broad range of applications from near DC to 3000 MHz. This single-supply switch integrates on-board CMOS control logic
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PE4210
PE4210
PE4210G-08MSOP-50A
PE4210-08MSOP-2000C
PE4210-08MSOP-50A
PE4210-EK
PE4210G-08MSOP-2000C
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Untitled
Abstract: No abstract text available
Text: Product Specification PE4210 SPDT UltraCMOS RF Switch 10 MHz - 3 GHz Features • Single 3-volt power supply Low Insertion loss: 0.30 dB at 1000 MHz, 0.45 dB at 2000 MHz gn The PE4210 UltraCMOS™ RF Switch is designed to cover a broad range of applications from 10 MHz to 3 GHz. This singlesupply switch integrates on-board CMOS control logic driven
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PE4210
PE4210
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Untitled
Abstract: No abstract text available
Text: TGF2023-2-01 6 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 18 GHz 38 dBm Nominal PSAT at 3 GHz 69% Maximum PAE 18 dB Nominal Power Gain at 3 GHz
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TGF2023-2-01
TQGaN25
TGF2023-2-01
DC-18
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NEC 421000
Abstract: PD421000 NEC IC D 553 C
Text: NEC //P D 4 2 1 0 0 0 1 ,0 4 8 ,5 7 6 x 1 -B IT D YN A M IC CMOS RAM NEC Electronics Inc. Description The//PD421000 is a fast-page, 1,048,576-word by 1-bit dynam ic CMOS RAM designed to operate from a single + 5 -vo lt power supply. The device is fabricated with
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uPD421000
576-word
//PD421000
NEC 421000
PD421000
NEC IC D 553 C
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nec 424256
Abstract: 424256 41256 dram 42256 41256 424256 pin out 424256 memory
Text: MC-42512A36, -424512A36 524,288 X 36-Bit Dynamic CMOS RAM Module Lylj W NEC Electronics Inc. Description Pin Configuration The MC-42512A36 and the MC-424512A36 are dynam ic RAM modules organized as 524,288 words by 36 bits and designed to operate from a single + 5 -vo lt power
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MC-42512A36,
-424512A36
36-Bit
MC-42512A36
MC-424512A36
MC-424S12A36WF.
-424512A36
-424512A
nec 424256
424256
41256 dram
42256
41256
424256 pin out
424256 memory
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nec 424256
Abstract: 424256 memory 424256 424256 pin out 424256 nec
Text: M C- 42512 A 3 6 , - 424512 A 36 524,288 X 36 -Bit Dynam ic CM OS RAM Module 1L T M 7 /* * F U Æ2 d W N E C E le ctro n ics Inc. Pin Configuration Description The MC-42512A36 and the MC-424512A36 are dynamic RAM modules organized as 524,288 words by 36 bits
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MC-42512A36
MC-424512A36
MC-42512A36,
-424512A36
MC-424S12A
36BH/FH)
nec 424256
424256 memory
424256
424256 pin out
424256 nec
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424256 pin out
Abstract: TIO 872-M 424256 pd42256 nec 424256 DG342
Text: blE ]> • bM27525 D O a m 1!? DMT MC-42512A36, -424512A36 524,288 X 36-Bit Dynamic CMOS RAM Module NEC Electronics Inc. N E C 0. 3 - ELECTRONICS INC Description Pin Configuration T h e M C -4 2 5 1 2 A 3 6 a n d th e M C -4 2 4 5 1 2 A 3 6 a re d y n a m ic
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bM27525
MC-42512A36
MC-424512A36
Q03M210
MC-42512A36,
-424512A36
72-Pin
MC-424512A
36BH/FH)
b4E75E5
424256 pin out
TIO 872-M
424256
pd42256
nec 424256
DG342
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BH-80
Abstract: NEC 421000 MC-421000A36
Text: NEC ELECTRONICS INC me 3ÖE D B bM27525 QQ3175t> 1 BINECE t - ï w NEC Electronics Inc. j - p MC-421000A36 1,048,576 X 36-Bit Dynamic CMOS RAM Module Description Pin Configuration The M C -421000A 36is a fast-page dynam ic RAM module organized as 1,048,576 words by 36 bits and designed
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bM27525
QQ3175t>
MC-421000A36
36-Bit
72-Pin
b427S25
QG31737
MC-421000A36
BH-80
NEC 421000
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424256 memory
Abstract: 424256
Text: SEC MC-42512A36, -424512A36 524,288 X 36-Bit Dynamic CMOS RAM Module NEC Electronics Inc. Prelim inary Information April 1992 Description Pin Configuration The MC-42512A36 and the MC-424512A36 are dynamic RAM modules organized as 524,288 words by 36 bits and designed to operate from a single +5-volt power
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MC-42512A36,
-424512A36
36-Bit
MC-42512A36
MC-424512A36
72-Pin
424256 memory
424256
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-421000A32BA, 421000A32FA 1 M-WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE D e s c r ip t io n Th e M C -4 2 1 0 0 0 A 3 2 B A , 4 2 1 0 0 0 A 3 2 F A are 1,048,576 w o rd s by 32 bits d yn a m ic R A M m o d u le on w h ich 2 p ie ce s
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MC-421000A32BA,
421000A32FA
32-BIT
M72B-50A46
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41256 dram
Abstract: No abstract text available
Text: NEC MC-42256A36, -424256A36 262,144 X 36-Bit Dynamic CMOS RAM Module NEC Electronics Inc. Pin Configuration Description The MC-42256A36 and the MC-424256A36 are dynamic RAM modules organized as 264,144 words by 36 bits and designed to operate from a single + 5-volt power
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MC-42256A36,
-424256A36
36-Bit
MC-42256A36
MC-424256A36
72-Pin
-424256A
41256 dram
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UD42256
Abstract: 42256
Text: NEC MC-42256A36, -424256A36 262,144 X 36-Bit Dynamic CMOS RAM Module NEC Electronics Inc. Pin Configuration Description The MC-42256A36 and the MC-424256A36 are dynamic RAM modules organized as 264,144 words by 36 bits and designed to operate from a single +5-volt power
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MC-42256A36,
-424256A36
36-Bit
MC-42256A36
MC-424256A36
MC-424256A
-424256A36
UD42256
42256
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Untitled
Abstract: No abstract text available
Text: JUL »1 1902 NEC NEC Electronics Inc. MC-42256A36, -424256A36 262,144 X 36-Bit Dynamic CMOS RAM Module Preliminary Information June 1992 Description Pin Configuration The MC-42256A36 and the MC-424256A36 are dynamic RAM modules organized as 264,144 words by 36 bits
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MC-42256A36,
-424256A36
36-Bit
MC-42256A36
MC-424256A36
72-Pin
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