41256
Abstract: BIOS and Kernel Developer’s Guide (BKDG) For AMD Family 11h Processors Socket S1g2 Processor Functional Data Sheet SBI Temperature Sensor Interface (SB-TSI) SBI Temperature Sensor Interface SB-TSI AMD 40821 Socket S1g2 Processor Functional 40821 APIC21 Socket S1g2 Processor
Text: 41256 Rev 3.00 - July 07, 2008 AMD Family 11h Processor BKDG Cover page BIOS and Kernel Developer’s Guide BKDG For AMD Family 11h Processors Advanced Micro Devices 1 41256 Rev 3.00 - July 07, 2008 AMD Family 11h Processor BKDG 2005–2008 Advanced Micro Devices, Inc. All rights reserved.
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D41256
Abstract: 41256 NEC D41256 apd412 41256P PD41256 RX5A NPD412 D412 JJPD41256
Text: pP D 41256 262,144 X 1-Bit D y n a m ic NMOS RAM F U IC /W NEC E lectron ics Inc. D escription Pin Configurations The jiPD41256 is a 262,144-word by 1-bit dynamic RAM designed to operate from a single + 5-volt power supply and fabricated with a double polylayer, N-channel,
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uPD41256
144-word
D41256
41256
NEC D41256
apd412
41256P
PD41256
RX5A
NPD412
D412
JJPD41256
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M41256A
Abstract: 41256A
Text: O K I sem iconductor MSM 41256 A_ 262,144-WORD x 1-BIT DYNAMIC RAM <PAGE MODE TYPE> GENERAL DESCRIPTION The Oki MSM41256A is a fully decoded, dynamic NMOS random access memory organized as 262,144-word x 1 bit. The design is optimized for high-speed, high-performance applications
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144-WORD
MSM41256A
M41256A
41256A
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41256
Abstract: 41256 dram 41256 ram Siemens HYB 41256-12 41256-12 dram 41256 MEMORY 41256-15
Text: SIEM EN S 262,144-Bit Dynamic RAM • • • • • • • • • • • • • HYB 41256-10/-12/-15 262,144 x 1-bit organization Industry standard 16 pins Single + 5 V supply, ± 1 0 % tolerance Low power dissipation: - 358 mW active max. - 28 mW standby (max.)
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144-Bit
Q67100-Q380
Q67100-Q346
Q67100-Q347
41256
41256 dram
41256 ram
Siemens HYB 41256-12
41256-12 dram
41256 MEMORY
41256-15
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41256
Abstract: 41256-15 41256 ram Siemens HYB 41256-12 41256 dram 41256-12 41256-12 dram 41256-10 41256 MEMORY C511
Text: S IE M E N S 262,144-Bit Dynamic RAM HYB 41256-10/-12/-15 • 262,144 x 1-bit organization • Industry standard 16 pins • Single + 5 V supply, ± 10 % tolerance • Low power dissipation: - 358 mW active max. - 28 mW standby (max.) • 100 ns access time
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144-Bit
Q67100-Q380
Q67100-Q346
Q67100-Q347
41256
41256-15
41256 ram
Siemens HYB 41256-12
41256 dram
41256-12
41256-12 dram
41256-10
41256 MEMORY
C511
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41256
Abstract: Siemens HYB 41256-12 41256 dram 41256-12 41256-15 41256-12 dram 41256 ram
Text: SIEMENS 262,144-Bit Dynamic RAM • • • • • • • • • • • • • HYB 41256-10/-12/-15 262,144 x 1-bit organization Industry standard 16 pins Single + 5 V supply, ± 10 % tolerance Low power dissipation: - 358 mW active max. - 28 mW standby (max.)
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144-Bit
Q67100-Q380
Q67100-Q346
Q67100-Q347
41256
Siemens HYB 41256-12
41256 dram
41256-12
41256-15
41256-12 dram
41256 ram
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41256 dram
Abstract: MX8012 41256 41256 ram 41256 MEMORY Continuously Variable Slope Delta Modulator mx8003
Text: M A C R O NIX INC 34E D • 5bûûôô5 0QQQ177 b • 'T : 7 7 - I3 MX8012 PRELIMINARY m FEATURES GENERAL DESCRIPTIONS • Adaptive Delta Modulation is used. • Variable speech length con trolled by STOP input. • Direct drive of 41256 or 411024. • Internal power up reset.
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0QQQ177
MX8012
000sq.
41256 dram
41256
41256 ram
41256 MEMORY
Continuously Variable Slope Delta Modulator
mx8003
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TC55B8128
Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6
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TC511001
TC514101
514170B
514280B
TC5316200P
KM2X16100
KM23C16000G
KM23C16100G
KM23C16000FP
KM23C16100FP
TC55B8128
KM23C4000AG
TC534000AF
HN62308BP
TC551632
hitachi cross
mb83
68512U
HITACHI 64k DRAM
TC55B4256
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Paradigm 41256
Abstract: 41256 ram PDM41256 PDM41256SA
Text: PARADIGM 256K Static RAM 32K x 8-Bit PDM41256SA PDM41256LA Features Description □ High speed access times Com'l: 1 0 ,1 2 ,1 5 , 20 and 25ns M il: 1 2 ,1 5 , 20, 25, 35, 45, and 55ns □ Low pow er operation - PDM 41256SA Active: 400m W typ. Standby: 150 m W (typ.)
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PDM41256SA
PDM41256LA
400mW
PDM41256LA
350mW
MIL-STD-883,
PDM41256
designer41256SA
Paradigm 41256
41256 ram
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Paradigm 41256
Abstract: 41256 PDM41256 PPM41256LA paradigm pdm41256sa 41256l
Text: PDM41256SA PDM41256LA Paradigm 256K Static RAM 32K x 8-Bit Features Description U High speed access times Com'l: 8,10,12,15, 20 and 25 ns Ind'l: 10,12,15, 20, and 25 ns The PDM41256 is a high-performance CMOS static RAM organized as 32,768 x 8 bits. This product is
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PDM41256SA
PDM41256LA
400mW
PDM41256LA
350mW
PDM41256
00G0b3a
PDM41256SA,
Paradigm 41256
41256
PPM41256LA
paradigm pdm41256sa
41256l
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Untitled
Abstract: No abstract text available
Text: PARADIGM 256K Static RAM 32K x 8-Bit PDM 41256SA PDM 41256LA Features Description □ High speed access times Com'l: 1 0 ,1 2 ,1 5 ,2 0 and 25ns M il: 12,15, 20, 25, 35,45, and 55ns □ Low power operation - PDM41256SA Active: 400mW typ. Standby: 150 mW (typ.)
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41256SA
41256LA
PDM41256SA
400mW
PDM41256LA
350mW
MIL-STD883,
PDM41256
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41464 dram
Abstract: 41464 64k DRAM 514256 41256 ram M 41464
Text: Pu t H n u System T ech n o lo gy Nu m b er in g MSA: Linear IC m m MSI.: Bipolar 1C : Mtiliiplc k ; MSM: m o s k ; D RAM M o d ule B y t e w id e D R A M B a s e d R e v is io n Lo w Po w er MSC Device Type | 23 B 109 B L - Device Identifier Speed 11 Package Type
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dram 4164
Abstract: 74670 register 41256
Text: UNITED MICROELECTRONICS 30E D • q3a5fl5a 00001 51 T ■ T ~ 5 ^ - 3 3 -òS UM82C088 PC/X T Integration Chip Features ■ Fully IBM-PC/XT compatible ■ 82C84 Clock generator with 2 clock-inputs to generate the CPU clock. These are 14.318 MHz and 30 MHz which will support 4.77 MHz and 10 MHz CPU clocks
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UM82C088
82C84
82C88
82C37
82C59
82C53
82C55
dram 4164
74670 register
41256
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N341256
Abstract: N341256P15 N341256SJ N341256SJ-15 41256 n341256p20 n341256s N341256SJ12 41256 ram N341256SJ15
Text: CMOS SRAM Jw NKK N341256 256K-BIT 32KX8 • Features • CMOS SRAM organized as 32,768 x Sbits • Single +5.0V(+10% ) Power Supply • High Speed A ccess time : 12/15/20/25ns • Low power operation Active : 180mA(max.) 28pin Plastic DIP(300m il) Standby : 60m A(m ax.)
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256K-BIT
32KX8)
N341256
12/15/20/25ns
180mA
-28pin
300mil)
N341256
N341256P15
N341256SJ
N341256SJ-15
41256
n341256p20
n341256s
N341256SJ12
41256 ram
N341256SJ15
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Untitled
Abstract: No abstract text available
Text: MC-41256A9 262,144 X 9-Bit Dynamic NMOS RAM Module NEC Electronics Inc. Description Pin Configuration The MC-41256A9 is a 262,144-word by 9-bit DRAM mod ule designed to operate from a single + 5-volt power supply. Advanced dynamic NMOS circuitry, Including a
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MC-41256A9
144-word
pPD41256
MC-41256A9
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NEC IC D 553 C
Abstract: D41256 41256
Text: MC-41256A9 262,144 X 9-Bit Dynamic NMOS RAM Module W NEC Electronics Inc. Description Pin Configuration T h e M C -4 1 2 5 6 A 9 is a 262,144-w ord by 9-bit DRAM m o d ule desig ned to o p e ra te from a single + 5-volt po w er 30-Pin SIMM supply. A d v an c ed d y n am ic N M O S circuitry, including a
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MC-41256A9
144-w
cycles1256A9
NEC IC D 553 C
D41256
41256
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Untitled
Abstract: No abstract text available
Text: Paradigm' b^lDID PDM41256SA PDM41256LA OOGQBb? TE4 S P A T 256K Static RAM 32K x 8-Bit Features Description □ High speed access times Com'l: 10,12,15,20 and 25ns Ind'l: 10,12,15,20, and 25ns M il: 12,15,20,25, and 35ns The PDM41256 is a high performance CMOS static
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PDM41256SA
PDM41256LA
PDM41256
400mW
PDM41256SA,
PDM41256
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nec 424256
Abstract: 424256 41256 dram 42256 41256 424256 pin out 424256 memory
Text: MC-42512A36, -424512A36 524,288 X 36-Bit Dynamic CMOS RAM Module Lylj W NEC Electronics Inc. Description Pin Configuration The MC-42512A36 and the MC-424512A36 are dynam ic RAM modules organized as 524,288 words by 36 bits and designed to operate from a single + 5 -vo lt power
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MC-42512A36,
-424512A36
36-Bit
MC-42512A36
MC-424512A36
MC-424S12A36WF.
-424512A36
-424512A
nec 424256
424256
41256 dram
42256
41256
424256 pin out
424256 memory
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nec 424256
Abstract: 424256 memory 424256 424256 pin out 424256 nec
Text: M C- 42512 A 3 6 , - 424512 A 36 524,288 X 36 -Bit Dynam ic CM OS RAM Module 1L T M 7 /* * F U Æ2 d W N E C E le ctro n ics Inc. Pin Configuration Description The MC-42512A36 and the MC-424512A36 are dynamic RAM modules organized as 524,288 words by 36 bits
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MC-42512A36
MC-424512A36
MC-42512A36,
-424512A36
MC-424S12A
36BH/FH)
nec 424256
424256 memory
424256
424256 pin out
424256 nec
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FZH115B
Abstract: fzh261 FZK105 FZH131 FZJ111 FZH115 FZH205 Multiplexer IC 74151 FZH265B 74LS104
Text: Digital I.C.s, 74INTEGRATED CIRCUITS DIGITAL TTL, 74LS & 74HC Series Quad 2-input NAND gate Quad 2-input NAND gate, open collector Quad 2-input NOR gate Quad 2-input NOR gate, open collector Hex inverter Hex inverter, O/C collector Hex inverter, Buffer 30V O/P
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74INTEGRATED
Line-to-10
150ns
16-DIL
150ns
18-pin
250ns
300ns
FZH115B
fzh261
FZK105
FZH131
FZJ111
FZH115
FZH205
Multiplexer IC 74151
FZH265B
74LS104
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80387SX
Abstract: 41256 41256 dram 88C215 ibm at motherboard 80286 80386SX 511000 dram 88C212 88c211 80286 pin configuration
Text: SYSL06IC TECHNOLOGY CORP 24E D M &Ö14540 ODOOOOl 4 • ~ 7 ^ 5 ä '3 3 Solutions - o / glfiUKìll TdOWMilY ©©BP, Chip Set \V 88C286 SUPER ENHANCED CHIP SET The 88C286 is an enhanced PC/AT compatible chip set which is a highly integrated VLSI implementation of the control logic used in the
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SYSL06IC
145M0
88C286
80386SX
88C211
88C212
88C215
80387SX
41256
41256 dram
88C215
ibm at motherboard 80286
511000 dram
88C212
88c211
80286 pin configuration
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Untitled
Abstract: No abstract text available
Text: PA R A D I G M TECHNOLOGY PARADËM" INC SGE b*JmO*lG 0000123 1 D 256K Static RAM 32K x 8-Bit IPAT PDM41256SA PDM41256LA Features Description □ High speed access times Com'l: 1 0 ,1 2 ,1 5 ,2 0 and 25ns M il: 1 2 ,1 5 ,2 0 , 25, 35,4 5 , and 55ns □ Low power operation
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PDM41256SA
PDM41256LA
400mW
350mW
MIL-STD883,
PDM41256
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Untitled
Abstract: No abstract text available
Text: Paradigm 256K Static RAM 32K x 8-Bit PDM41256SA PDM41256LA Features Description □ High speed access times Com'l: 1 0 ,1 2 ,1 5,2 0 and 25ns M il: 1 2 ,1 5 ,2 0 ,2 5 ,3 5 ,4 5 , and 55ns □ Low power operation - PDM41256SA Active: 400mW typ. Standby: 150 mW (typ.)
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PDM41256SA
PDM41256LA
400mW
350mW
MIL-STD883,
PDM41256
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Untitled
Abstract: No abstract text available
Text: PARADIGM TECHNOLOGY INC PARADIGM H'lE D feTMlO^O 0000Q33 0 256K Static RAM 32K x 8-Bit PDM 41256S PDM 41256L Features Description □ High speed access times Com'l: 1 5 ,1 7 ,2 0 ,2 5 ,3 5 and 45ns M il: 2 0 ,2 5 ,3 5 ,4 5 , and 55ns □ Low power operation
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0000Q33
41256S
41256L
PDM41256S
400mW
PDM41256L
350mW
MIL-STD883,
PDM41256
412S6S/L
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