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    41256 RAM Search Results

    41256 RAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NSC810AD/B Rochester Electronics LLC NSC810A - RAM I/O TIMER Visit Rochester Electronics LLC Buy
    CDP1824CD/B Rochester Electronics LLC CDP1824C - 32-Word x 8-Bit Static RAM Visit Rochester Electronics LLC Buy
    29705/BXA Rochester Electronics LLC 29705 - 16-Word by 4-Bit 2-Port RAM Visit Rochester Electronics LLC Buy
    29705APCB Rochester Electronics LLC 29705A - 16-Word by 4-Bit 2-Port RAM Visit Rochester Electronics LLC Buy
    29705ADM/B Rochester Electronics LLC 29705A - 16-Word by 4-Bit 2-Port RAM Visit Rochester Electronics LLC Buy

    41256 RAM Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    41256

    Abstract: BIOS and Kernel Developer’s Guide (BKDG) For AMD Family 11h Processors Socket S1g2 Processor Functional Data Sheet SBI Temperature Sensor Interface (SB-TSI) SBI Temperature Sensor Interface SB-TSI AMD 40821 Socket S1g2 Processor Functional 40821 APIC21 Socket S1g2 Processor
    Text: 41256 Rev 3.00 - July 07, 2008 AMD Family 11h Processor BKDG Cover page BIOS and Kernel Developer’s Guide BKDG For AMD Family 11h Processors Advanced Micro Devices 1 41256 Rev 3.00 - July 07, 2008 AMD Family 11h Processor BKDG 2005–2008 Advanced Micro Devices, Inc. All rights reserved.


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    D41256

    Abstract: 41256 NEC D41256 apd412 41256P PD41256 RX5A NPD412 D412 JJPD41256
    Text: pP D 41256 262,144 X 1-Bit D y n a m ic NMOS RAM F U IC /W NEC E lectron ics Inc. D escription Pin Configurations The jiPD41256 is a 262,144-word by 1-bit dynamic RAM designed to operate from a single + 5-volt power supply and fabricated with a double polylayer, N-channel,


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    uPD41256 144-word D41256 41256 NEC D41256 apd412 41256P PD41256 RX5A NPD412 D412 JJPD41256 PDF

    M41256A

    Abstract: 41256A
    Text: O K I sem iconductor MSM 41256 A_ 262,144-WORD x 1-BIT DYNAMIC RAM <PAGE MODE TYPE> GENERAL DESCRIPTION The Oki MSM41256A is a fully decoded, dynamic NMOS random access memory organized as 262,144-word x 1 bit. The design is optimized for high-speed, high-performance applications


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    144-WORD MSM41256A M41256A 41256A PDF

    41256

    Abstract: 41256 dram 41256 ram Siemens HYB 41256-12 41256-12 dram 41256 MEMORY 41256-15
    Text: SIEM EN S 262,144-Bit Dynamic RAM • • • • • • • • • • • • • HYB 41256-10/-12/-15 262,144 x 1-bit organization Industry standard 16 pins Single + 5 V supply, ± 1 0 % tolerance Low power dissipation: - 358 mW active max. - 28 mW standby (max.)


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    144-Bit Q67100-Q380 Q67100-Q346 Q67100-Q347 41256 41256 dram 41256 ram Siemens HYB 41256-12 41256-12 dram 41256 MEMORY 41256-15 PDF

    41256

    Abstract: 41256-15 41256 ram Siemens HYB 41256-12 41256 dram 41256-12 41256-12 dram 41256-10 41256 MEMORY C511
    Text: S IE M E N S 262,144-Bit Dynamic RAM HYB 41256-10/-12/-15 • 262,144 x 1-bit organization • Industry standard 16 pins • Single + 5 V supply, ± 10 % tolerance • Low power dissipation: - 358 mW active max. - 28 mW standby (max.) • 100 ns access time


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    144-Bit Q67100-Q380 Q67100-Q346 Q67100-Q347 41256 41256-15 41256 ram Siemens HYB 41256-12 41256 dram 41256-12 41256-12 dram 41256-10 41256 MEMORY C511 PDF

    41256

    Abstract: Siemens HYB 41256-12 41256 dram 41256-12 41256-15 41256-12 dram 41256 ram
    Text: SIEMENS 262,144-Bit Dynamic RAM • • • • • • • • • • • • • HYB 41256-10/-12/-15 262,144 x 1-bit organization Industry standard 16 pins Single + 5 V supply, ± 10 % tolerance Low power dissipation: - 358 mW active max. - 28 mW standby (max.)


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    144-Bit Q67100-Q380 Q67100-Q346 Q67100-Q347 41256 Siemens HYB 41256-12 41256 dram 41256-12 41256-15 41256-12 dram 41256 ram PDF

    41256 dram

    Abstract: MX8012 41256 41256 ram 41256 MEMORY Continuously Variable Slope Delta Modulator mx8003
    Text: M A C R O NIX INC 34E D • 5bûûôô5 0QQQ177 b • 'T : 7 7 - I3 MX8012 PRELIMINARY m FEATURES GENERAL DESCRIPTIONS • Adaptive Delta Modulation is used. • Variable speech length con­ trolled by STOP input. • Direct drive of 41256 or 411024. • Internal power up reset.


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    0QQQ177 MX8012 000sq. 41256 dram 41256 41256 ram 41256 MEMORY Continuously Variable Slope Delta Modulator mx8003 PDF

    TC55B8128

    Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6


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    TC511001 TC514101 514170B 514280B TC5316200P KM2X16100 KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP TC55B8128 KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256 PDF

    Paradigm 41256

    Abstract: 41256 ram PDM41256 PDM41256SA
    Text: PARADIGM 256K Static RAM 32K x 8-Bit PDM41256SA PDM41256LA Features Description □ High speed access times Com'l: 1 0 ,1 2 ,1 5 , 20 and 25ns M il: 1 2 ,1 5 , 20, 25, 35, 45, and 55ns □ Low pow er operation - PDM 41256SA Active: 400m W typ. Standby: 150 m W (typ.)


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    PDM41256SA PDM41256LA 400mW PDM41256LA 350mW MIL-STD-883, PDM41256 designer41256SA Paradigm 41256 41256 ram PDF

    Paradigm 41256

    Abstract: 41256 PDM41256 PPM41256LA paradigm pdm41256sa 41256l
    Text: PDM41256SA PDM41256LA Paradigm 256K Static RAM 32K x 8-Bit Features Description U High speed access times Com'l: 8,10,12,15, 20 and 25 ns Ind'l: 10,12,15, 20, and 25 ns The PDM41256 is a high-performance CMOS static RAM organized as 32,768 x 8 bits. This product is


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    PDM41256SA PDM41256LA 400mW PDM41256LA 350mW PDM41256 00G0b3a PDM41256SA, Paradigm 41256 41256 PPM41256LA paradigm pdm41256sa 41256l PDF

    Untitled

    Abstract: No abstract text available
    Text: PARADIGM 256K Static RAM 32K x 8-Bit PDM 41256SA PDM 41256LA Features Description □ High speed access times Com'l: 1 0 ,1 2 ,1 5 ,2 0 and 25ns M il: 12,15, 20, 25, 35,45, and 55ns □ Low power operation - PDM41256SA Active: 400mW typ. Standby: 150 mW (typ.)


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    41256SA 41256LA PDM41256SA 400mW PDM41256LA 350mW MIL-STD883, PDM41256 PDF

    41464 dram

    Abstract: 41464 64k DRAM 514256 41256 ram M 41464
    Text: Pu t H n u System T ech n o lo gy Nu m b er in g MSA: Linear IC m m MSI.: Bipolar 1C : Mtiliiplc k ; MSM: m o s k ; D RAM M o d ule B y t e w id e D R A M B a s e d R e v is io n Lo w Po w er MSC Device Type | 23 B 109 B L - Device Identifier Speed 11 Package Type


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    dram 4164

    Abstract: 74670 register 41256
    Text: UNITED MICROELECTRONICS 30E D • q3a5fl5a 00001 51 T ■ T ~ 5 ^ - 3 3 -òS UM82C088 PC/X T Integration Chip Features ■ Fully IBM-PC/XT compatible ■ 82C84 Clock generator with 2 clock-inputs to generate the CPU clock. These are 14.318 MHz and 30 MHz which will support 4.77 MHz and 10 MHz CPU clocks


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    UM82C088 82C84 82C88 82C37 82C59 82C53 82C55 dram 4164 74670 register 41256 PDF

    N341256

    Abstract: N341256P15 N341256SJ N341256SJ-15 41256 n341256p20 n341256s N341256SJ12 41256 ram N341256SJ15
    Text: CMOS SRAM Jw NKK N341256 256K-BIT 32KX8 • Features • CMOS SRAM organized as 32,768 x Sbits • Single +5.0V(+10% ) Power Supply • High Speed A ccess time : 12/15/20/25ns • Low power operation Active : 180mA(max.) 28pin Plastic DIP(300m il) Standby : 60m A(m ax.)


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    256K-BIT 32KX8) N341256 12/15/20/25ns 180mA -28pin 300mil) N341256 N341256P15 N341256SJ N341256SJ-15 41256 n341256p20 n341256s N341256SJ12 41256 ram N341256SJ15 PDF

    Untitled

    Abstract: No abstract text available
    Text: MC-41256A9 262,144 X 9-Bit Dynamic NMOS RAM Module NEC Electronics Inc. Description Pin Configuration The MC-41256A9 is a 262,144-word by 9-bit DRAM mod­ ule designed to operate from a single + 5-volt power supply. Advanced dynamic NMOS circuitry, Including a


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    MC-41256A9 144-word pPD41256 MC-41256A9 PDF

    NEC IC D 553 C

    Abstract: D41256 41256
    Text: MC-41256A9 262,144 X 9-Bit Dynamic NMOS RAM Module W NEC Electronics Inc. Description Pin Configuration T h e M C -4 1 2 5 6 A 9 is a 262,144-w ord by 9-bit DRAM m o d ­ ule desig ned to o p e ra te from a single + 5-volt po w er 30-Pin SIMM supply. A d v an c ed d y n am ic N M O S circuitry, including a


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    MC-41256A9 144-w cycles1256A9 NEC IC D 553 C D41256 41256 PDF

    Untitled

    Abstract: No abstract text available
    Text: Paradigm' b^lDID PDM41256SA PDM41256LA OOGQBb? TE4 S P A T 256K Static RAM 32K x 8-Bit Features Description □ High speed access times Com'l: 10,12,15,20 and 25ns Ind'l: 10,12,15,20, and 25ns M il: 12,15,20,25, and 35ns The PDM41256 is a high performance CMOS static


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    PDM41256SA PDM41256LA PDM41256 400mW PDM41256SA, PDM41256 PDF

    nec 424256

    Abstract: 424256 41256 dram 42256 41256 424256 pin out 424256 memory
    Text: MC-42512A36, -424512A36 524,288 X 36-Bit Dynamic CMOS RAM Module Lylj W NEC Electronics Inc. Description Pin Configuration The MC-42512A36 and the MC-424512A36 are dynam ic RAM modules organized as 524,288 words by 36 bits and designed to operate from a single + 5 -vo lt power


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    MC-42512A36, -424512A36 36-Bit MC-42512A36 MC-424512A36 MC-424S12A36WF. -424512A36 -424512A nec 424256 424256 41256 dram 42256 41256 424256 pin out 424256 memory PDF

    nec 424256

    Abstract: 424256 memory 424256 424256 pin out 424256 nec
    Text: M C- 42512 A 3 6 , - 424512 A 36 524,288 X 36 -Bit Dynam ic CM OS RAM Module 1L T M 7 /* * F U Æ2 d W N E C E le ctro n ics Inc. Pin Configuration Description The MC-42512A36 and the MC-424512A36 are dynamic RAM modules organized as 524,288 words by 36 bits


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    MC-42512A36 MC-424512A36 MC-42512A36, -424512A36 MC-424S12A 36BH/FH) nec 424256 424256 memory 424256 424256 pin out 424256 nec PDF

    FZH115B

    Abstract: fzh261 FZK105 FZH131 FZJ111 FZH115 FZH205 Multiplexer IC 74151 FZH265B 74LS104
    Text: Digital I.C.s, 74INTEGRATED CIRCUITS DIGITAL TTL, 74LS & 74HC Series Quad 2-input NAND gate Quad 2-input NAND gate, open collector Quad 2-input NOR gate Quad 2-input NOR gate, open collector Hex inverter Hex inverter, O/C collector Hex inverter, Buffer 30V O/P


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    74INTEGRATED Line-to-10 150ns 16-DIL 150ns 18-pin 250ns 300ns FZH115B fzh261 FZK105 FZH131 FZJ111 FZH115 FZH205 Multiplexer IC 74151 FZH265B 74LS104 PDF

    80387SX

    Abstract: 41256 41256 dram 88C215 ibm at motherboard 80286 80386SX 511000 dram 88C212 88c211 80286 pin configuration
    Text: SYSL06IC TECHNOLOGY CORP 24E D M &Ö14540 ODOOOOl 4 • ~ 7 ^ 5 ä '3 3 Solutions - o / glfiUKìll TdOWMilY ©©BP, Chip Set \V 88C286 SUPER ENHANCED CHIP SET The 88C286 is an enhanced PC/AT compatible chip set which is a highly integrated VLSI implementation of the control logic used in the


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    SYSL06IC 145M0 88C286 80386SX 88C211 88C212 88C215 80387SX 41256 41256 dram 88C215 ibm at motherboard 80286 511000 dram 88C212 88c211 80286 pin configuration PDF

    Untitled

    Abstract: No abstract text available
    Text: PA R A D I G M TECHNOLOGY PARADËM" INC SGE b*JmO*lG 0000123 1 D 256K Static RAM 32K x 8-Bit IPAT PDM41256SA PDM41256LA Features Description □ High speed access times Com'l: 1 0 ,1 2 ,1 5 ,2 0 and 25ns M il: 1 2 ,1 5 ,2 0 , 25, 35,4 5 , and 55ns □ Low power operation


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    PDM41256SA PDM41256LA 400mW 350mW MIL-STD883, PDM41256 PDF

    Untitled

    Abstract: No abstract text available
    Text: Paradigm 256K Static RAM 32K x 8-Bit PDM41256SA PDM41256LA Features Description □ High speed access times Com'l: 1 0 ,1 2 ,1 5,2 0 and 25ns M il: 1 2 ,1 5 ,2 0 ,2 5 ,3 5 ,4 5 , and 55ns □ Low power operation - PDM41256SA Active: 400mW typ. Standby: 150 mW (typ.)


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    PDM41256SA PDM41256LA 400mW 350mW MIL-STD883, PDM41256 PDF

    Untitled

    Abstract: No abstract text available
    Text: PARADIGM TECHNOLOGY INC PARADIGM H'lE D feTMlO^O 0000Q33 0 256K Static RAM 32K x 8-Bit PDM 41256S PDM 41256L Features Description □ High speed access times Com'l: 1 5 ,1 7 ,2 0 ,2 5 ,3 5 and 45ns M il: 2 0 ,2 5 ,3 5 ,4 5 , and 55ns □ Low power operation


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    0000Q33 41256S 41256L PDM41256S 400mW PDM41256L 350mW MIL-STD883, PDM41256 412S6S/L PDF