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    40N60CD1 Search Results

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    40N60CD1 Price and Stock

    IXYS Corporation IXSR40N60CD1

    IGBT 600V 62A 210W ISOPLUS247
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    IXYS Corporation IXSK40N60CD1

    IGBT 600V 75A 280W TO264
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    IXYS Corporation IXGN40N60CD1

    IGBT MODULE 600V SOT227B
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    IXYS Corporation IXGR40N60CD1

    IGBT 600V 75A 200W ISOPLUS247
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    New Advantage Corporation IXGR40N60CD1 133 1
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    IXYS Corporation IXSX40N60CD1

    IGBT 600V 75A 280W PLUS247
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    40N60CD1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXGR40N60

    Abstract: 40n60 40N60c 40N60CD1 IXGR40N60CD1
    Text: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 40N60C IXGR 40N60CD1 IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 75 A = 2.5 V = 75 ns Preliminary Data Sheet (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


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    PDF ISOPLUS247TM 40N60C 40N60CD1 IC110 E153432 728B1 IXGR40N60 40n60 40N60c IXGR40N60CD1

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    Abstract: No abstract text available
    Text: IXSR 40N60CD1 IGBT with Diode ISOPLUS247TM VCES IC25 = 600 = 62 = 2.5 = 70 VCE SAT tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability V A V ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR


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    PDF ISOPLUS247TM 40N60CD1

    40N60CD1

    Abstract: PLUS247 IXSR40N60CD1 RG70 40N60C
    Text: IXSR 40N60CD1 IGBT with Diode ISOPLUS247TM VCES IC25 = 600 = 62 = 2.5 = 70 VCE SAT tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability V A V ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR


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    PDF 40N60CD1 ISOPLUS247TM 40N60CD1 PLUS247 IXSR40N60CD1 RG70 40N60C

    ixgh40n60cd1

    Abstract: 40N60c 40n60 40N60CD1 C110
    Text: Advanced Technical Information HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 40N60C IXGR 40N60CD1 IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 75 A = 2.5 V = 75 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR


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    PDF ISOPLUS247TM 40N60C 40N60CD1 H40N60CD1 ixgh40n60cd1 40N60c 40n60 C110

    Untitled

    Abstract: No abstract text available
    Text: IGBT with Diode PLUS247 TM package IXSK 40N60CD1 IXSX 40N60CD1 VCES IC25 VCE sat tfi(typ) Maximum Ratings PLUS 247TM (IXSX) Short Circuit SOA Capability = = = = 600 V 75 A 2.5 V 70 ns Preliminary data Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V


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    PDF PLUS247 40N60CD1 40N60CD1 247TM O-264

    TO 521 MH

    Abstract: 40N60CD1 PLUS247
    Text: IGBT with Diode TM PLUS247 package IXSK 40N60CD1 IXSX 40N60CD1 VCES IC25 VCE sat tfi(typ) Maximum Ratings PLUS 247TM (IXSX) Short Circuit SOA Capability = = = = 600 V 75 A 2.5 V 70 ns Preliminary data Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V


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    PDF 40N60CD1 PLUS247 247TM TO 521 MH 40N60CD1 PLUS247

    40N60CD1

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 40N60C IXGR 40N60CD1 IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 75 A = 2.7 V = 75 ns Preliminary Data Sheet (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


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    PDF ISOPLUS247TM 40N60C 40N60CD1 IC110 065B1 728B1 123B1 728B1

    IXGR40N60C

    Abstract: 40N60c IXGR40N60CD1 40n60 40N60CD1 IXGR40N60
    Text: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 40N60C IXGR 40N60CD1 IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 75 A = 2.7 V = 75 ns Preliminary Data Sheet (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


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    PDF ISOPLUS247TM 40N60C 40N60CD1 IC110 065B1 728B1 123B1 728B1 IXGR40N60C 40N60c IXGR40N60CD1 40n60 IXGR40N60

    transistor 12n60c

    Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
    Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design


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    PDF ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET

    b1113

    Abstract: diode b18 35N120AU1 40N60CD1 diode b129 50N60BD1 30N60BD1 40N60BD1 IXSH 35N120AU1 diode b14
    Text: SCSOA IGBT S-Series Contents IGBT with Fast Diode VCES max IC Low VCE sat TC = 25 °C VCE(sat) max PLUS247 ISOPLUS (IXSX) 247TM (IXSR) TC = 25 °C TO-247 (IXSH) TO-264 (IXSK) TO-268 (IXST) miniBLOC (IXSN) Page V A V 600 32 1.8 ➤IXSH 16N60U1 B1-4 48 2.2


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    PDF PLUS247 247TM O-247 O-264 O-268 16N60U1 24N60U1 30N60U1 62N60U1 24N60AU1 b1113 diode b18 35N120AU1 40N60CD1 diode b129 50N60BD1 30N60BD1 40N60BD1 IXSH 35N120AU1 diode b14

    Untitled

    Abstract: No abstract text available
    Text: □ IX Y S Advanced Technical Information IXSK 40N60CD1 IXSX 40N60CD1 IGBT with Diode PLUS247 package ^fi typ V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C, limited by leads


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    PDF 40N60CD1 PLUS247â

    12N60c equivalent

    Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q
    Text: ISOPLUS Family ISOPLUS220 ISOPL US247™ ISOPLUS ¡4-PAC™ IS O P LU S 22rM Isolated Discrete Packages IS O P LU S 247™ is th e D C B is o la te d version o f th e P L U S 247™ -package TO 2 4 7 w ith o u t a m o u n tin g h o le . T h e d e s ig n o f th is n e w p a c k a g e (p a te n t


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    PDF ISOPLUS220TM US247TM 247TM ISOPLUS22rM ISOPLUS227TM IXFE180N10 IXFE73N30Q IXFE48N50Q IXFE48N50QD2 12N60c equivalent 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q