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    IXYS Corporation IXGX40N120BD1

    IGBT Transistors 75 Amps 1200V 3.3 Rds
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    IXGX40N120BD1

    Abstract: max3037 2040q
    Text: Advanced Technical Information High Voltage IGBT with Diode IXGX 40N120BD1 VCES IC25 VCE sat = 1200 = 75 = 3.3 = 250 tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous


    Original     		40N120BD1 IC110 IF110 PLUS247 405B2 IXGX40N120BD1 max3037 2040q PDF