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    40EPS12 DIODE DATASHEET Search Results

    40EPS12 DIODE DATASHEET Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    40EPS12 DIODE DATASHEET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    40EPS

    Abstract: 40EPS08 40EPS12 40EPS16
    Text: Previous Datasheet Index Next Data Sheet Bulletin I2104A 40EPS. SERIES INPUT RECTIFIER DIODE VF < 1V @ 20A IFSM = 475A VRRM 800 to 1600V Description/Features The 40EPS rectifier series has been optimized for very low forward voltage drop with moderate leakage. The glass passivation technology used


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    PDF I2104A 40EPS. 40EPS 40EPS08 40EPS12 40EPS16

    40EPS

    Abstract: 40EPS08 40EPS12
    Text: 40EPS.PbF High Voltage Series Vishay High Power Products Input Rectifier Diode, 40 A DESCRIPTION/FEATURES Base cathode The 40EPS.PbF rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation


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    PDF 40EPS. O-247AC 11-Mar-11 40EPS 40EPS08 40EPS12

    Untitled

    Abstract: No abstract text available
    Text: 40EPS.PbF High Voltage Series Vishay High Power Products Input Rectifier Diode, 40 A DESCRIPTION/FEATURES Base cathode The 40EPS.PbF rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation


    Original
    PDF 40EPS. O-247AC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: 40EPS.PbF High Voltage Series Vishay High Power Products Input Rectifier Diode, 40 A DESCRIPTION/FEATURES Base cathode The 40EPS.PbF rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation


    Original
    PDF 40EPS. O-247AC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: VS-40EPS.PbF Series, VS-40EPS.-M3 Series www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 40 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and JEDEC-JESD47


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    PDF VS-40EPS. JEDEC-JESD47 2002/95/EC O-247AC 11-Mar-11

    VS-40EPS12-M3

    Abstract: VS-40EPS08-M3 VS-40EPS12
    Text: VS-40EPS.PbF Series, VS-40EPS.-M3 Series www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 40 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and JEDEC-JESD47


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    PDF VS-40EPS. JEDEC-JESD47 2002/95/EC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. VS-40EPS12-M3 VS-40EPS08-M3 VS-40EPS12

    Untitled

    Abstract: No abstract text available
    Text: VS-40EPS.PbF Series, VS-40EPS.-M3 Series www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 40 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and qualified JEDEC -JESD47


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    PDF VS-40EPS. -JESD47 O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: VS-40EPS.PbF Series, VS-40EPS.-M3 Series www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 40 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and JEDEC-JESD47


    Original
    PDF VS-40EPS. JEDEC-JESD47 O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: VS-40EPS.PbF Series, VS-40EPS.-M3 Series www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 40 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and qualified JEDEC -JESD47


    Original
    PDF VS-40EPS. -JESD47 O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    40EPS12PBF

    Abstract: No abstract text available
    Text: VS-40EPS.PbF Series, VS-40EPS.-M3 Series www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 40 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and qualified JEDEC -JESD47


    Original
    PDF VS-40EPS. -JESD47 O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 40EPS12PBF

    Untitled

    Abstract: No abstract text available
    Text: VS-40EPS.PbF Series, VS-40EPS.-M3 Series www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 40 A FEATURES Base cathode • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Designed and qualified JEDEC -JESD47


    Original
    PDF VS-40EPS. -JESD47 O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A