sil 5102
Abstract: IRFP150 TB334
Text: IRFP150 Data Sheet May 2000 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET [ /Title IRFP1 50 /Subject (40A, 100V, 0.055 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (40A, 100V, 0.055 Ohm, NChannel Power MOSFET, Intersil Corporation, TO247) /Creator ()
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IRFP150
sil 5102
IRFP150
TB334
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irfp150
Abstract: No abstract text available
Text: IGNS DES W E N CT FOR PRODU D E D E MEN ITUT COM SUBST 0N E R NOT SSIBLE IRFP15 Data Sheet PO 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET [ /Title IRFP1 50 /Subject (40A, 100V, 0.055 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (40A, 100V, 0.055 Ohm,
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irf150
Abstract: MOSFET IRF150 TA17421 TB334 circuits of IRF150 40A100V IRF-150
Text: IRF150 Data Sheet March 1999 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET • 40A, 100V Formerly Developmental Type TA17421. Ordering Information PACKAGE 1824.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,
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IRF150
TA17421.
irf150
MOSFET IRF150
TA17421
TB334
circuits of IRF150
40A100V
IRF-150
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Untitled
Abstract: No abstract text available
Text: FDPF085N10A N-Channel PowerTrench MOSFET 100V, 40A, 8.5mW Features General Description • RDS on = 6.5mW ( Typ.)@ VGS = 10V, ID = 40A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
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Abstract: No abstract text available
Text: FDPF085N10A N-Channel PowerTrench MOSFET 100V, 40A, 8.5mW Features General Description • RDS on = 6.5mW ( Typ.)@ VGS = 10V, ID = 40A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
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FDPF085N10A
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sil 5102
Abstract: 150N IRFP150 TB334 PO40A
Text: [ /Title IRFP1 50 /Subject (40A, 100V, 0.055 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (40A, 100V, 0.055 Ohm, NChannel Power MOSFET, Intersil Corporation, TO247) /Creator () /DOCI S N ESIG W D CT E N FOR ODU TM DED UTE PR N E STIT OMM REC LE SUB 150N
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IRFP15
sil 5102
150N
IRFP150
TB334
PO40A
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Untitled
Abstract: No abstract text available
Text: Enpirion Power Datasheet ET4040QI 40A Power Stage High Speed MOSFET with Integrated Current and Temperature Sense Description Features The ET4040QI is a 40A, high speed, high density, monolithic power stage IC with integrated sensing features in a 5.5mm x 7.5mm x 0.95mm, 46 pin QFN
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mosfet SMD 6 PIN IC FOR PWM
Abstract: 210nH IR3553MTRPBF ir3550 IR3553
Text: IR3553 40A Integrated PowIRstage FEATURES DESCRIPTION • Peak efficiency up to 93.2% at 1.2V Integrated driver, control MOSFET, synchronous MOSFET and Schottky diode Input voltage VIN operating range up to 15V Output voltage range from 0.25V up to 3.3V
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IR3550
IR3551
IR3553
IR3553
3553M
mosfet SMD 6 PIN IC FOR PWM
210nH
IR3553MTRPBF
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Untitled
Abstract: No abstract text available
Text: IR3553 40A Integrated PowIRstage FEATURES DESCRIPTION • Peak efficiency up to 93.2% at 1.2V Integrated driver, control MOSFET, synchronous MOSFET and Schottky diode Input voltage VIN operating range up to 15V Output voltage range from 0.25V up to 3.3V
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IR3553
IR3553
3553M
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF5210 POWER MOSFET -40A, -100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UF5210 is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance.
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O-220
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UF5210G-TA3-T
QW-R502-845
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Untitled
Abstract: No abstract text available
Text: IR3553 40A Integrated PowIRstage FEATURES DESCRIPTION • Peak efficiency up to 93.2% at 1.2V Integrated driver, control MOSFET, synchronous MOSFET and Schottky diode Input voltage VIN operating range up to 15V Output voltage range from 0.25V up to (VCC - 2.5V)
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IR3550
IR3551
IR3553
IR3553
3553M
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 75N75 Power MOSFET 80A, 75V N-CHANNEL POWER MOSFET 1 FEATURES * RDS ON =11mΩ @VGS=10V, ID=40A * Ultra low gate charge ( typical 117 nC ) * Fast switching capability * Low reverse transfer Capacitance (CRSS= typical 240 pF )
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75N75
O-220F1
O-220F2
O-263
O-220F
O-220
75N75
QW-R502-097
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IRFPS37N50A
Abstract: IRFPS40N60K IR 224A
Text: PD - 94384A SMPS MOSFET IRFPS40N60K Applications l Hard Switching Primary or PFC Switch l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive HEXFET Power MOSFET VDSS RDS(on) typ. ID 0.110 Ω 40A 600V
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4384A
IRFPS40N60K
O-247AC
12-Mar-07
IRFPS37N50A
IRFPS40N60K
IR 224A
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irfps40n60k
Abstract: IRFPS
Text: PD - 94384 SMPS MOSFET Applications l Hard Switching Primary or PFC Switch l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive IRFPS40N60K HEXFET Power MOSFET VDSS RDS(on) typ. ID 0.110 Ω 40A 600V
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O-247AC
5M-1994.
O-274AA
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Abstract: No abstract text available
Text: PD - 94384A SMPS MOSFET IRFPS40N60K Applications l Hard Switching Primary or PFC Switch l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive HEXFET Power MOSFET VDSS RDS(on) typ. ID 0.110 Ω 40A 600V
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4384A
IRFPS40N60K
O-247AC
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: Series S60DC40 Output to 40A, 600 Vdc DC Solid-State Relay FEATURES/BENEFITS • Latest generation MOSFET technology • Ultra low on-state resistance • Innovative isolated driver ensures fast power transistor turn on and of and thus low power transient
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S60DC40
Abstract: varistor ve 17 NFEN55011 varistor wiring diagram IEC60947-1
Text: Series S60DC40 Output to 40A, 600 Vdc DC Solid-State Relay FEATURES/BENEFITS • Latest generation MOSFET technology • Ultra low on-state resistance • Innovative isolated driver ensures fast power transistor turn on and off and thus low power transient
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S60DC40
100Hz
700Hz
S60DC40
S60DC40\022009\Q1
varistor ve 17
NFEN55011
varistor wiring diagram
IEC60947-1
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STB40NF03L
Abstract: No abstract text available
Text: STB40NF03L N-CHANNEL 30V - 0.020Ω - 40A D2PAK STripFET POWER MOSFET TYPE STB40NF03L • ■ VDSS RDS on ID 30 V <0.022 Ω 40 A TYPICAL RDS(on) = 0.020 Ω LOW THRESHOLD DRIVE 3 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature
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4311 mosfet transistor
Abstract: tl 4311 transistor tl 4311 IRFP150 TB334 T2T-2
Text: IRFP150 Data Sheet July 1999 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of
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TA17431.
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4311 mosfet transistor
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transistor tl 4311
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TB334
T2T-2
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STB40NF03L
Abstract: No abstract text available
Text: STB40NF03L N-CHANNEL 30V - 0.020Ω - 40A D2PAK STripFET POWER MOSFET TYPE STB40NF03L • ■ VDSS RDS on ID 30 V <0.022 Ω 40 A TYPICAL RDS(on) = 0.020 Ω LOW THRESHOLD DRIVE 3 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature
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Untitled
Abstract: No abstract text available
Text: NEW Series S60DC40 Output to 40A, 600 Vdc DC Solid-State Relay FEATURES/BENEFITS • Latest generation MOSFET technology • Ultra low on-state resistance • Innovative isolated driver ensures fast power transistor turn on and off and thus low power transient
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S60DC40
100Hz
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S60DC40\102006\Q1
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STP40NF03L
Abstract: No abstract text available
Text: STP40NF03L N - CHANNEL 30V - 0.020 Ω - 40A TO-220 STripFET POWER MOSFET TYPE VDSS R DS on ID STP40NF03L 30 V < 0.022 Ω 40 A • ■ TYPICAL RDS(on) = 0.020 Ω LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature
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O-220
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STP3020L
Abstract: No abstract text available
Text: STP3020L N - CHANNEL 30V - 0.019Ω - 40A - TO-220 STripFET POWER MOSFET TYPE V DSS R DS on ID STP3020L 30 V < 0.022 Ω 40 A • ■ ■ TYPICAL RDS(on) = 0.019 Ω LOW GATE CHARGE A 100oC APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This Power Mosfet is the latest development of
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Untitled
Abstract: No abstract text available
Text: IRFP150 Semiconductor Data Sheet July 1999 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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