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    40A MOSFET DRIVER Search Results

    40A MOSFET DRIVER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    40A MOSFET DRIVER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sil 5102

    Abstract: IRFP150 TB334
    Text: IRFP150 Data Sheet May 2000 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET [ /Title IRFP1 50 /Subject (40A, 100V, 0.055 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (40A, 100V, 0.055 Ohm, NChannel Power MOSFET, Intersil Corporation, TO247) /Creator ()


    Original     		PDF IRFP150 sil 5102 IRFP150 TB334

    irfp150

    Abstract: No abstract text available
    Text: IGNS DES W E N CT FOR PRODU D E D E MEN ITUT COM SUBST 0N E R NOT SSIBLE IRFP15 Data Sheet PO 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET [ /Title IRFP1 50 /Subject (40A, 100V, 0.055 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (40A, 100V, 0.055 Ohm,


    Original     		PDF IRFP15 IRFP150 irfp150

    irf150

    Abstract: MOSFET IRF150 TA17421 TB334 circuits of IRF150 40A100V IRF-150
    Text: IRF150 Data Sheet March 1999 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET • 40A, 100V Formerly Developmental Type TA17421. Ordering Information PACKAGE 1824.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,


    Original     		PDF IRF150 TA17421. irf150 MOSFET IRF150 TA17421 TB334 circuits of IRF150 40A100V IRF-150

    Untitled

    Abstract: No abstract text available
    Text: FDPF085N10A N-Channel PowerTrench MOSFET 100V, 40A, 8.5mW Features General Description • RDS on = 6.5mW ( Typ.)@ VGS = 10V, ID = 40A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		PDF FDPF085N10A

    Untitled

    Abstract: No abstract text available
    Text: FDPF085N10A N-Channel PowerTrench MOSFET 100V, 40A, 8.5mW Features General Description • RDS on = 6.5mW ( Typ.)@ VGS = 10V, ID = 40A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		PDF FDPF085N10A FDPF085N10A

    sil 5102

    Abstract: 150N IRFP150 TB334 PO40A
    Text: [ /Title IRFP1 50 /Subject (40A, 100V, 0.055 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (40A, 100V, 0.055 Ohm, NChannel Power MOSFET, Intersil Corporation, TO247) /Creator () /DOCI S N ESIG W D CT E N FOR ODU TM DED UTE PR N E STIT OMM REC LE SUB 150N


    Original     		PDF IRFP15 sil 5102 150N IRFP150 TB334 PO40A

    Untitled

    Abstract: No abstract text available
    Text: Enpirion Power Datasheet ET4040QI 40A Power Stage High Speed MOSFET with Integrated Current and Temperature Sense Description Features The ET4040QI is a 40A, high speed, high density, monolithic power stage IC with integrated sensing features in a 5.5mm x 7.5mm x 0.95mm, 46 pin QFN


    Original     		PDF ET4040QI

    mosfet SMD 6 PIN IC FOR PWM

    Abstract: 210nH IR3553MTRPBF ir3550 IR3553
    Text: IR3553 40A Integrated PowIRstage FEATURES DESCRIPTION • Peak efficiency up to 93.2% at 1.2V  Integrated driver, control MOSFET, synchronous MOSFET and Schottky diode  Input voltage VIN operating range up to 15V  Output voltage range from 0.25V up to 3.3V


    Original     		PDF IR3550 IR3551 IR3553 IR3553 3553M mosfet SMD 6 PIN IC FOR PWM 210nH IR3553MTRPBF

    Untitled

    Abstract: No abstract text available
    Text: IR3553 40A Integrated PowIRstage FEATURES DESCRIPTION • Peak efficiency up to 93.2% at 1.2V  Integrated driver, control MOSFET, synchronous MOSFET and Schottky diode  Input voltage VIN operating range up to 15V  Output voltage range from 0.25V up to 3.3V


    Original     		PDF IR3553 IR3553 3553M

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF5210 POWER MOSFET -40A, -100V P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UF5210 is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance.


    Original     		PDF UF5210 -100V UF5210 O-220 UF5210L-TA3-T UF5210G-TA3-T QW-R502-845

    Untitled

    Abstract: No abstract text available
    Text: IR3553 40A Integrated PowIRstage FEATURES DESCRIPTION • Peak efficiency up to 93.2% at 1.2V  Integrated driver, control MOSFET, synchronous MOSFET and Schottky diode  Input voltage VIN operating range up to 15V  Output voltage range from 0.25V up to (VCC - 2.5V)


    Original     		PDF IR3550 IR3551 IR3553 IR3553 3553M

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 75N75 Power MOSFET 80A, 75V N-CHANNEL POWER MOSFET 1  FEATURES * RDS ON =11mΩ @VGS=10V, ID=40A * Ultra low gate charge ( typical 117 nC ) * Fast switching capability * Low reverse transfer Capacitance (CRSS= typical 240 pF )


    Original     		PDF 75N75 O-220F1 O-220F2 O-263 O-220F O-220 75N75 QW-R502-097

    IRFPS37N50A

    Abstract: IRFPS40N60K IR 224A
    Text: PD - 94384A SMPS MOSFET IRFPS40N60K Applications l Hard Switching Primary or PFC Switch l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive HEXFET Power MOSFET VDSS RDS(on) typ. ID 0.110 Ω 40A 600V


    Original     		PDF 4384A IRFPS40N60K O-247AC 12-Mar-07 IRFPS37N50A IRFPS40N60K IR 224A

    irfps40n60k

    Abstract: IRFPS
    Text: PD - 94384 SMPS MOSFET Applications l Hard Switching Primary or PFC Switch l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive IRFPS40N60K HEXFET Power MOSFET VDSS RDS(on) typ. ID 0.110 Ω 40A 600V


    Original     		PDF IRFPS40N60K O-247AC 5M-1994. O-274AA irfps40n60k IRFPS

    Untitled

    Abstract: No abstract text available
    Text: PD - 94384A SMPS MOSFET IRFPS40N60K Applications l Hard Switching Primary or PFC Switch l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive HEXFET Power MOSFET VDSS RDS(on) typ. ID 0.110 Ω 40A 600V


    Original     		PDF 4384A IRFPS40N60K O-247AC 08-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: Series S60DC40 Output to 40A, 600 Vdc DC Solid-State Relay FEATURES/BENEFITS • Latest generation MOSFET technology • Ultra low on-state resistance • Innovative isolated driver ensures fast power transistor turn on and of and thus low power transient


    Original     		PDF S60DC40 100Hz 700Hz S60DC40 S60DC40\022009\Q1

    S60DC40

    Abstract: varistor ve 17 NFEN55011 varistor wiring diagram IEC60947-1
    Text: Series S60DC40 Output to 40A, 600 Vdc DC Solid-State Relay FEATURES/BENEFITS • Latest generation MOSFET technology • Ultra low on-state resistance • Innovative isolated driver ensures fast power transistor turn on and off and thus low power transient


    Original     		PDF S60DC40 100Hz 700Hz S60DC40 S60DC40\022009\Q1 varistor ve 17 NFEN55011 varistor wiring diagram IEC60947-1

    STB40NF03L

    Abstract: No abstract text available
    Text: STB40NF03L N-CHANNEL 30V - 0.020Ω - 40A D2PAK STripFET POWER MOSFET TYPE STB40NF03L • ■ VDSS RDS on ID 30 V <0.022 Ω 40 A TYPICAL RDS(on) = 0.020 Ω LOW THRESHOLD DRIVE 3 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature


    Original     		PDF STB40NF03L O-263 STB40NF03L

    4311 mosfet transistor

    Abstract: tl 4311 transistor tl 4311 IRFP150 TB334 T2T-2
    Text: IRFP150 Data Sheet July 1999 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of


    Original     		PDF IRFP150 TA17431. O-247 4311 mosfet transistor tl 4311 transistor tl 4311 IRFP150 TB334 T2T-2

    STB40NF03L

    Abstract: No abstract text available
    Text: STB40NF03L N-CHANNEL 30V - 0.020Ω - 40A D2PAK STripFET POWER MOSFET TYPE STB40NF03L • ■ VDSS RDS on ID 30 V <0.022 Ω 40 A TYPICAL RDS(on) = 0.020 Ω LOW THRESHOLD DRIVE 3 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature


    Original     		PDF STB40NF03L O-263 STB40NF03L

    Untitled

    Abstract: No abstract text available
    Text: NEW Series S60DC40 Output to 40A, 600 Vdc DC Solid-State Relay FEATURES/BENEFITS • Latest generation MOSFET technology • Ultra low on-state resistance • Innovative isolated driver ensures fast power transistor turn on and off and thus low power transient


    Original     		PDF S60DC40 100Hz 700Hz S60DC40 S60DC40\102006\Q1

    STP40NF03L

    Abstract: No abstract text available
    Text: STP40NF03L N - CHANNEL 30V - 0.020 Ω - 40A TO-220 STripFET POWER MOSFET TYPE VDSS R DS on ID STP40NF03L 30 V < 0.022 Ω 40 A • ■ TYPICAL RDS(on) = 0.020 Ω LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature


    Original     		PDF STP40NF03L O-220 STP40NF03L

    STP3020L

    Abstract: No abstract text available
    Text: STP3020L N - CHANNEL 30V - 0.019Ω - 40A - TO-220 STripFET POWER MOSFET TYPE V DSS R DS on ID STP3020L 30 V < 0.022 Ω 40 A • ■ ■ TYPICAL RDS(on) = 0.019 Ω LOW GATE CHARGE A 100oC APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This Power Mosfet is the latest development of


    Original     		PDF STP3020L O-220 100oC STP3020L

    Untitled

    Abstract: No abstract text available
    Text: IRFP150 Semiconductor Data Sheet July 1999 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    OCR Scan     		PDF IRFP150 O-247