AN7254
Abstract: RFM12N35 RFM12N40
Text: [ /Title RFM12 N35, RFM12 N40 /Subject (12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs) /Author () /Keywords (12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs) /Creator () /DOCIN RFM12N35, RFM12N40 Semiconductor 12A, 350V and 400V, 0.500 Ohm,
|
Original
|
RFM12
RFM12N35,
RFM12N40
AN7254
RFM12N35
RFM12N40
|
PDF
|
P11NK40ZFP
Abstract: P11NK40 P11NK40Z transistor p11nk40z P11NK B11NK40 STB11NK40ZT4 STP11NK40Z STP11NK40ZFP JESD97
Text: STB11NK40Z - STP11NK40ZFP STP11NK40Z N-channel 400V - 0.49Ω - 9A TO-220 - TO-220FP - D2PAK Zener-protected SuperMESHTM Power MOSFET General features Type VDSS RDS on ID Pw STB11NK40Z 400V <0.55Ω 10A 110W STP11NK40Z 400V <0.55Ω 10A 110W 3 3 1 STP11NK40ZFP
|
Original
|
STB11NK40Z
STP11NK40ZFP
STP11NK40Z
O-220
O-220FP
STB11NK40Z
O-220FP
O-220
P11NK40ZFP
P11NK40
P11NK40Z
transistor p11nk40z
P11NK
B11NK40
STB11NK40ZT4
STP11NK40Z
STP11NK40ZFP
JESD97
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STB11NK40Z, STP11NK40ZFP STP11NK40Z N-channel 400 V, 0.49 Ω, 9 A, TO-220, TO-220FP, D2PAK Zener-protected SuperMESHTM Power MOSFET Features Type VDSS RDS on ID Pw STB11NK40Z 400V <0.55Ω 10A 110W STP11NK40Z 400V <0.55Ω 10A 110W 1 STP11NK40ZFP 400V <0.55Ω
|
Original
|
STB11NK40Z,
STP11NK40ZFP
STP11NK40Z
O-220,
O-220FP,
STB11NK40Z
O-220FP
O-220
|
PDF
|
P11NK40ZFP
Abstract: p11nk40z transistor p11nk40z 8936 B11NK B2 marking code Zener zener diode 3.0 b2 STB11NK40Z 8936 v 3 STP11NK40Z
Text: STB11NK40Z, STP11NK40ZFP STP11NK40Z N-channel 400 V, 0.49 Ω, 9 A, TO-220, TO-220FP, D2PAK Zener-protected SuperMESHTM Power MOSFET Features Type VDSS RDS on ID Pw STB11NK40Z 400V <0.55Ω 10A 110W STP11NK40Z 400V <0.55Ω 10A 110W 3 3 1 STP11NK40ZFP 400V
|
Original
|
STB11NK40Z,
STP11NK40ZFP
STP11NK40Z
O-220,
O-220FP,
STB11NK40Z
O-220FP
O-220
P11NK40ZFP
p11nk40z
transistor p11nk40z
8936
B11NK
B2 marking code Zener
zener diode 3.0 b2
STB11NK40Z
8936 v 3
STP11NK40Z
|
PDF
|
3n40
Abstract: No abstract text available
Text: TM UniFET FDD3N40 / FDU3N40 400V N-Channel MOSFET Features Description • 2A, 400V, RDS on = 3.4Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
|
Original
|
FDD3N40
FDU3N40
FDU3N40
FDD3N40TF
FDD3N40TM
3n40
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FRFET TM FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
|
Original
|
FQP6N40CF/FQPF6N40CF
|
PDF
|
MOSFET 400V TO-220
Abstract: MOSFET 400V FQP6N40CF FQPF6N40CF FQPF Series
Text: FRFET TM FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
|
Original
|
FQP6N40CF/FQPF6N40CF
FQP6N40CF/FQPF6N40CF
MOSFET 400V TO-220
MOSFET 400V
FQP6N40CF
FQPF6N40CF
FQPF Series
|
PDF
|
FDD3N40TM
Abstract: FDD3N40 FDD3N40TF FDU3N40 FDU3N40TU
Text: TM UniFET FDD3N40 / FDU3N40 400V N-Channel MOSFET Features Description • 2A, 400V, RDS on = 3.4Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
|
Original
|
FDD3N40
FDU3N40
FDD3N40TM
FDD3N40TF
FDU3N40
FDU3N40TU
|
PDF
|
Untitled
Abstract: No abstract text available
Text: QFET FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features Description • 10.5 A, 400V, RDS on = 0.5 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
|
Original
|
FQP11N40C/FQPF11N40C
FQP11N40C/FQPF11N40C
|
PDF
|
FQPF Series
Abstract: MOSFET 400V FQP6N40CF FQPF6N40CF N-Channel mosfet 400v to220
Text: FRFET TM FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
|
Original
|
FQP6N40CF/FQPF6N40CF
FQP6N40CF/FQPF6N40CF
FQPF Series
MOSFET 400V
FQP6N40CF
FQPF6N40CF
N-Channel mosfet 400v to220
|
PDF
|
FQPF4N50C
Abstract: FQP11N40C FQP3N50C FQPF11N40C FQPF3N50C FQP4N50C
Text: QFET FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features Description • 10.5 A, 400V, RDS on = 0.5 : @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
|
Original
|
FQP11N40C/FQPF11N40C
FQPF4N50C
FQP11N40C
FQP3N50C
FQPF11N40C
FQPF3N50C
FQP4N50C
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FRFET TM FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
|
Original
|
FQP6N40CF/FQPF6N40CF
FQP6N40CF/FQPF6N40CF
|
PDF
|
MOSFET 400V TO-220
Abstract: FQP11N40C fqpf11n40c N-Channel mosfet driver 400v to220 MOSFET 400V FQP3N50C FQPF3N50C N-Channel mosfet 400v to220
Text: FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features Description • 10.5 A, 400V, RDS on = 0.5 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
|
Original
|
FQP11N40C/FQPF11N40C
FQP11N40C/FQPF11N40C
MOSFET 400V TO-220
FQP11N40C
fqpf11n40c
N-Channel mosfet driver 400v to220
MOSFET 400V
FQP3N50C
FQPF3N50C
N-Channel mosfet 400v to220
|
PDF
|
MOSFET 400V
Abstract: MOSFET 400V TO-220 p channel mosfet 100v n-Channel mosfet 400v FQP11N40C FQP3N50C FQPF11N40C FQPF3N50C
Text: FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features Description • 10.5 A, 400V, RDS on = 0.5 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
|
Original
|
FQP11N40C/FQPF11N40C
FQP11N40C/FQPF11N40C
MOSFET 400V
MOSFET 400V TO-220
p channel mosfet 100v
n-Channel mosfet 400v
FQP11N40C
FQP3N50C
FQPF11N40C
FQPF3N50C
|
PDF
|
|
|
TOT - 4301
Abstract: LA 4303 IRFD320 TA17404 TB334
Text: IRFD320 Data Sheet July 1999 0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET • 0.5A, 400V • rDS ON = 1.800Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics
|
Original
|
IRFD320
TB334
TA17404.
TOT - 4301
LA 4303
IRFD320
TA17404
TB334
|
PDF
|
IRF340
Abstract: TA17424 to204ae TB334
Text: IRF340 Data Sheet March 1999 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET • 10A, 400V • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance
|
Original
|
IRF340
TB334
O-204AE
TA17424.
IRF340
TA17424
to204ae
TB334
|
PDF
|
Untitled
Abstract: No abstract text available
Text: QFET FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features Description • 10.5 A, 400V, RDS on = 0.5 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
|
Original
|
FQP11N40C/FQPF11N40C
O-220
O-220F
FQP11N40C/FQPF11N40C
|
PDF
|
IRFF310
Abstract: TB334
Text: IRFF310 Data Sheet March 1999 1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET • 1.35A, 400V • rDS ON = 3.600Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics
|
Original
|
IRFF310
TB334
TA17444.
IRFF310
TB334
|
PDF
|
IRFF320
Abstract: TA17404 TB334
Text: IRFF320 Data Sheet January 2002 2.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET Features • 2.5A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
|
Original
|
IRFF320
TA17404.
IRFF320
TA17404
TB334
|
PDF
|
IRFP350
Abstract: TB334
Text: IRFP350 Data Sheet January 2002 16A, 400V, 0.300 Ohm, N-Channel Power MOSFET Features • 16A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
|
Original
|
IRFP350
TA17434.
IRFP350
TB334
|
PDF
|
FQP6N40CF
Abstract: No abstract text available
Text: FQP6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 16nC)
|
Original
|
FQP6N40CF
FQP6N40CF
|
PDF
|
IRFP350
Abstract: TB334
Text: IRFP350 Data Sheet July 1999 16A, 400V, 0.300 Ohm, N-Channel Power MOSFET Ordering Information PART NUMBER IRFP350 PACKAGE TO-247 2319.4 Features • 16A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,
|
Original
|
IRFP350
O-247
IRFP350
TB334
|
PDF
|
Untitled
Abstract: No abstract text available
Text: tyvvys S RFM12N35, RFM12N40 Semiconductor y 12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 12A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such
|
OCR Scan
|
RFM12N35,
RFM12N40
RFM12N35
-204AA
TA17434.
AN7254
|
PDF
|
1RFS730
Abstract: irfs730a
Text: IRFS730A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ b v dss Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gale Charge Extended Safe Operating Area Lower Leakage Current : 10 pA{M ax. @ V^. =400V - 400V
|
OCR Scan
|
IRFS730A
1RFS730A
1RFS730
irfs730a
|
PDF
|
