400PW Search Results

400PW Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
BQ24400PW		Texas Instruments	Switch-mode NiCd/NiMH Battery Charger with Peak Voltage Detection Termination 8-TSSOP -20 to 70
BQ7790400PWR		Texas Instruments	3-4S Low-Power Protector 20-TSSOP -40 to 85
BQ7790400PW		Texas Instruments	3-4S Low-Power Protector 20-TSSOP -40 to 85
BQ28400PWR		Texas Instruments	Netbook and Tablet Lithium Ion Gas Gauge and Protector 20-TSSOP -40 to 85
TPS26400PWPR		Texas Instruments	42-V, 2-A industrial eFuse with integrated reverse input polarity protection 16-HTSSOP -40 to 125

400PW Price and Stock

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Rochester Electronics LLC BQ28400PWR IC BATT MFUNC LI-ION 2CL 20TSSOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BQ28400PWR	Bulk	263,880		30	1 - 10 - 100 $10.32 1000 $10.32 10000 $10.32	Buy Now
Rochester Electronics LLC BQ29400PWR IC BATT PROT LI-ION 2-4CL 8TSSOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BQ29400PWR	Bulk	40,000		544	1 - 10 - 100 - 1000 $0.55 10000 $0.55	Buy Now
Rochester Electronics LLC BQ24400PWR IC BATT CHG PWR SUP SUPPORT CIRC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BQ24400PWR	Bulk	36,000		58	1 - 10 - 100 $5.24 1000 $5.24 10000 $5.24	Buy Now
Rochester Electronics LLC BQ24400PW IC BATT CHG MULTI-CHEM 8TSSOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BQ24400PW	Bulk	17,664		49	1 - 10 - 100 $6.16 1000 $6.16 10000 $6.16	Buy Now
Rochester Electronics LLC BQ28400PW IC BATT MFUNC LI-ION 2CL 20TSSOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BQ28400PW	Bulk	11,690		25	1 - 10 - 100 $12.03 1000 $12.03 10000 $12.03	Buy Now

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400PW Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: BLF8G09LS-400PW; BLF8G09LS-400PGW Power LDMOS transistor Rev. 3 — 24 March 2014 Product data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor for base station applications at frequencies from 716 MHz to 960 MHz. Table 1. Typical performance	Original	PDF	BLF8G09LS-400PW; BLF8G09LS-400PGW BLF8G09LS-400PW 8G09LS-400PGW
Untitled Abstract: No abstract text available Text: BLF8G09LS-400PW; BLF8G09LS-400PGW Power LDMOS transistor Rev. 2 — 20 December 2013 Preliminary data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor for base station applications at frequencies from 716 MHz to 960 MHz. Table 1.	Original	PDF	BLF8G09LS-400PW; BLF8G09LS-400PGW BLF8G09LS-400PW 8G09LS-400PGW
Untitled Abstract: No abstract text available Text: BLF8G09LS-400PW; BLF8G09LS-400PGW Power LDMOS transistor Rev. 1 — 27 September 2013 Objective data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor for base station applications at frequencies from 716 MHz to 960 MHz. Table 1.	Original	PDF	BLF8G09LS-400PW; BLF8G09LS-400PGW BLF8G09LS-400PW 8G09LS-400PGW
Untitled Abstract: No abstract text available Text: CM OS STATIC RAMS 256K 64K x 4-BIT ' , S ep a ra te Data Inputs an d O u tp u ts pr e lim in a r y IDT71281S/L IDT71282S L FEATURES: DESCRIPTION: • • • • The IDT71281/IDT71282 are 262,144-bit high-speed static RAMs organized as 64K x 4. They are fabricated using IDT’s highperformance, high-reliability technology—CEMOS. This state-ofthe-art technology, combined with innovative circuit design	OCR Scan	PDF	IDT71281S/L IDT71282S IDT71281/IDT71282 144-bit 350mW. IDT71281 IDT71282 IL-STD-883,
Untitled Abstract: No abstract text available Text: L7C185 : v ;:i s r.r:;H pnH A m l FEATURES □ 8K x 8 Static RAM with Chip Select Pow erdow n, O utput Enable □ A uto-Pow erdow n Design □ A dvanced CMOS Technology □ High Speed — to 12 ns m axim um □ Low Pow er Operation Active: 425 m W typical at 25 ns	OCR Scan	PDF	L7C185 L7C185 185-L L7C185TC L7C185TC15* L7C185TC12* L7C185KC20* L7C185KC15* L7C185KC12* L7C185KM25*
Untitled Abstract: No abstract text available Text: L7C185 8K x 8 Static RAM Low Power DEVICES INCORPORATED DESCRIPTION FEATURES □ 8K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation	OCR Scan	PDF	L7C185 400pW L7C185) L7C185-L) MIL-STD-883, IDT7164, CY7C185/186 28-pin
S4120 Abstract: DSC-100W S4119 Text: INTECRATED DE VIC E IME D • 4Ö55771 00033ÖG E ■ CMOS STATIC RAM 256K 64K X 4-BIT PRELIMINARY IDT 61298S : IDT 61298L 'T''^6 3 "!O FEATURES: DESCRIPTION: • The IDT61298 is a 262,144-bit high-speed static RAM organized as 64K x 4. It Is fabricated using IDT's high-performance, high-reilablllty technology—CEMOS. This state-of-the-art technology,	OCR Scan	PDF	25/35/45/55/70ns 20/25/35/45/55ns IDT61298S 400mW 400pw IDT61298L 350mW 100pw 28-pln 61298S S4120 DSC-100W S4119
Dense-Pac Microsystems Abstract: making A10 Text: DENSE-PAC MICROSYSTEMS C Û P M 2ÖE » • 275^15 0000352 O » » P C DPS512X16AA3 Dense-Pac Microsystems, Inc. ^ HIGH SPEED CERAMIC 512K X 16 CMOS SRAM MODULE ADVANCED INFORMATION 7 ^ 6 -2 3 -7 4 DESCRIPTION: The DPS512X16AA3 "DENSE-STACK" module is a revolutionary new	OCR Scan	PDF	00Q0SS2 DPS512X16AA3 DPS512X16AA3 30A045-11 27S14Ã DQ0Q553 T-46-23-14 Dense-Pac Microsystems making A10
Untitled Abstract: No abstract text available Text: n D M w DPS256X32AV3 Dense-Pac Microsystems, Inc. 0 HIGH SPEED 256K X 32 CMOS SRAM VERSA-STACK ADVANCED INFORMATION DESCRIPTION: The DPS256X32AV3 "VERSA-STACK" module is a revolutionary new high speed memory subsystem using Dense-Pac Microsystems' ceramic Stackable	OCR Scan	PDF	DPS256X32AV3 I/031 A0-A16 J/018 30A04401
HFE4080 Abstract: HFE4080-32X Text: HFE4080-32X/XB A High Speed Fiber Optic VC SEL FEATURES • Industry standard ST*-LP fiber connector • Designed for drive currents between 5 and 15 mA • Optimized for low dependence of electrical properties over temperature • High speed > 1 Ghz 0PH0_229.doc	OCR Scan	PDF	HFE4080-32X/XB HFE4080-32X/XBA O-462/XBA FIBER302 HFE4080 HFE4080-32X
Untitled Abstract: No abstract text available Text: CMOS STATIC RAM 256K 256K x 1-BIT PRELIMINARY IS !” FEATURES: DESCRIPTION: • The ID T71257 Is a 2 6 2 ,144-bit high-speed static RAM organized as 256K x 1. It is fabricated using ID T’s high-performance, high-rellability C E M O S technology. This state-of-the-art technology,	OCR Scan	PDF	T71257 144-bit 200mV IDT71257S/IDT71257L 256Kx MIL-STD-883,
IDT71258S-35 Abstract: IDT71258S35 Text: CMOS STATIC RAM 256K 64Kx 4-BIT p r e l im in a r y IDT71258S IDT71258S IDT71258L FEATURES: DESCRIPTION: • The ID T 7 1258 is a 262,144-bit hig h -sp ee d sta tic RAM organized as 64K x 4. It is fa b rica te d u sin g ID T’s h ig h -p erform a n ce, high-rella b ility C E M O S te ch n o lo g y. T h is state-of-the-art te ch n olo gy, c o m	OCR Scan	PDF	IDT71258S IDT71258L 144-bit T71258 200mV IDT71258S/IDT71258L MIL-STD-883, IDT71258S-35 IDT71258S35
Intel mcs-40 Abstract: intel 1101 2116 ram 5101 RAM transistor equivalenti Bipolar PROM programming Creative IC CT 1975 intel 3601 1702a eprom MCS-40 Text: PRIC E 15 00 memory design handbook m in ia i O k p a r » lio n 1 0 7 7 INTRODUCTION The Intel Memory Design Handbook contains information on the use of Intel’s memory components and support circuits in system application. It is intended to aid the system designer to gain a thorough	OCR Scan	PDF	S-10380 CH-8021 /C-160/0577/50K Intel mcs-40 intel 1101 2116 ram 5101 RAM transistor equivalenti Bipolar PROM programming Creative IC CT 1975 intel 3601 1702a eprom MCS-40
AH 503 hall sensor Abstract: 48v, 20 amp battery charger circuit diagram transistor prc 606 j of AH 503 hall sensor sot-23 P-Channel MOSFET cpci backplane schematic RLF5018T-2R7M1R8 GN16 loua sot 23 LT6011 Text: u e r n e m m SEPTEMBER 2003 IN TH IS IS S U E . COVER ARTICLE Multiphase Power Conversion fo r Portable and Point-of-Load Boost Applications.1 David Salerno Issue H igh ligh ts. 2 LTC in the N ew s. 2	OCR Scan	PDF	D-59387 D-70567 I-20156 S-191 AH 503 hall sensor 48v, 20 amp battery charger circuit diagram transistor prc 606 j of AH 503 hall sensor sot-23 P-Channel MOSFET cpci backplane schematic RLF5018T-2R7M1R8 GN16 loua sot 23 LT6011

LSP280 Abstract: No abstract text available Text: S S •MMN LSP280 Sm Sm m SS <«HPWi MM -«wr 8K x 8 Static RAM DEVICES INCORPORATED FEATURES □ 8K x 8 Static RAM w ith Chip Select Powerdown, O utput Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation	OCR Scan	PDF	LSP280 28-pin LSP280PI20 LSP280PI15 LSP280PI12 LSP280WI20 LSP280WI15 LSP280WI12
LSP280PI12 Abstract: No abstract text available Text: LSP2BD —— — i-vi.;bs r go -!h;ma L S P 2S0 8K x S Static RAM - m m m m m □ 8K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation	OCR Scan	PDF	400pW 28-pin LSP280 LSP280PC20 LSP280PC15 LSP280PC12 LSP280WC20 LSP280WC15 LSP280WC12 LSP280PI12
HFE4085-322 Abstract: HFE4085-321 Text: HFE4085-32X/XB A High Speed Fiber Optic VCSEL FEATURES • Industry standard ST -LP fiber connector • Designed for drive currents between 5 and 15 mA • • Optimized for low dependence of electrical properties over temperature High speed > 1 Ghz OPHO_229.doc	OCR Scan	PDF	HFE4085-32X/XB HFE4085-32X/XBA FIBER301 FIBER303-GRA 45S1430 0021S57 HFE4085-322 HFE4085-321