Untitled
Abstract: No abstract text available
Text: HYM7V75A801BTFG 8Mx72, 8Mx8 based, PC100 DESCRIPTION The Hynix HYM7V75A801B F-Series are 8Mx72bits ECC Synchronous DRAM Modules. The modules are composed of nine 8Mx8bit CMOS Synchronous DRAMs in 400mll 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP
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HYM7V75A801BTFG
8Mx72,
PC100
HYM7V75A801B
8Mx72bits
400mll
54pin
168pin
64Mbytes
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PDF
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HYM7V65401
Abstract: No abstract text available
Text: HYM7V65401B L TQG 4Mx64, 4Mx16 based, PC100 DESCRIPTION The Hynix HYM7V65401B Q-Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bit CMOS Synchronous DRAMs In 400mll 54pln TSOP-II package and 2Kbit EEPROM in 8pln TSSOP package
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HYM7V65401B
4Mx64,
4Mx16
PC100
4Mx64bits
4Mx16bit
400mll
54pln
144pin
HYM7V65401
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PDF
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4N500
Abstract: IC 741 cn
Text: b427555 GG42530 Tfc.7 « N E C E / / MOS INTEGRATED CIR CU IT ju P D 4 2 S 1 6 1 9 0 , 4 2 S 1 7 1 9 0 , 4 2 S 1 8 1 9 0 16 M B IT D Y N A M IC RAM FA S T PA G E M O D E & B Y T E W R IT E M O DE - P R E LIM IN A R Y -D E S C R IP T IO N
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b427555
GG42530
uPD42S16190
uPD42S17190
uPD42S18190
475mil)
P32VF-100-475A
P32VF-100-475A
4N500
IC 741 cn
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PDF
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M37705E4BSP
Abstract: M37705M4B M37705E4B
Text: MITSUBISHI MICROCOMPUTERS M 37705E4BXXXSP PROM VERSION of M37705M 4BXXXSP DESCRIPTION The M37705E4BXXXSP is a sin g le -c h ip m icro com p uter d e PIN CONFIGURATION TOP VIEW signe d w ith high -pe rform an ce C M O S silicon gate tech nolo gy. This is housed in a 64-pin shrink plastic m o ld ed DIP.
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37705E4BXXXSP
M37705M
M37705E4BXXXSP
M37705M4BXXXSP
16K-byte
64-pin
25mVrms,
M37705E4BSP
M37705M4B
M37705E4B
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PDF
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Untitled
Abstract: No abstract text available
Text: HM51441OB/BL Series 1,048,576-word x 4-bit Dynamic RAM The Hitachi H M 51441 OB/BL is a CMOS dynamic R A M o rg a n iz e d 1,0 4 8 ,5 7 6 -w o rd x 4 -b it. H M 5 1441 OB/BL h as re a liz e d h ig h e r d en sity , h ig h e r p e rfo rm a n c e and v a rio u s fu n c tio n s by
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HM51441OB/BL
576-word
20pin
20-pin
HM514410BS/BLS-7
HM51441OBS/BLS-8
300-mil
20-pin
CP-20D)
HM514410BHM514410B/BL
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC55BS8125J-10/12 PRELIMINARY 131,072 WORD x 8 BIT SYNCHRONOUS STATIC RAM with Input Registers and Output Registers Description The TC55BS8125J is a 1,048,576 bit synchronous static random access memory fabricated using BiCMOS technology and organized as 131,072 w ords by 8 bits. The TC55BS8125J is similar to the TC55BS8128J but has common data I/O lines and
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TC55BS8125J-10/12
TC55BS8125J
TC55BS8128J
TDT724fi
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PDF
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Untitled
Abstract: No abstract text available
Text: IBM0364404C IBM0364164C IBM0364804C IBM03644B4C 64Mb Synchronous DRAM - Die Revision A r.-swreœsawwmiTO-; Features Programmable Wrap Sequence: Sequential or Interleave • High Performance: Multiple Burst Read with Single Write Option -360, j -365. Ci =3 ; CL=3
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IBM0364404C
IBM0364164C
IBM0364804C
IBM03644B4C
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PDF
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SEM t11
Abstract: 39S16800 39S16800AT-8 Q1323 q1333
Text: HYB39S1640x/80x/16xAT-8/-10 16MBit Synchronous DRAM SIEMENS 16 MBit Synchronous DRAM second generation Advanced Information • High Performance: Multiple Burst Operation CAS latency = 3 -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 7 8 ns Automatic Command
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HYB39S1640x/80x/16xAT-8/-10
16MBit
P-TSOPI-44
400mil
SEM t11
39S16800
39S16800AT-8
Q1323
q1333
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PDF
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Untitled
Abstract: No abstract text available
Text: IBM0316409C IBM0316809C IBM0316169C 16M b S yn c h ro n o u s D RAM Features • High Performance: I • Multiple Burst Read with Single Write Option • Automatic and Controlled Precharge Command I cl% j C L ^ S i Units j 100 83 ! MHz ; • Data Mask for Read/W rite control x4,x8
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IBM0316409C
IBM0316809C
IBM0316169C
cycles/64ms
07H3997
0003Sb0
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PDF
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658512
Abstract: No abstract text available
Text: ADVANCE INFORMATION KM658512/L/L-L Pseudo SRAM 5 1 2 K X 8 Bit CMOS Pseudo Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: — CE Access Time: 80,100,120ns Max. — Cycle Time: Random Read/Write Cycle Time 160, 180, 210ns (Max.) • Low Power Dissipation: 200mW typ. (Active)
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KM658512/L/L-L
120ns
210ns
200mW
Cycles/32ms
itiA/200
KM658512L-L
32-Pin
600mil)
525mll)
658512
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PDF
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED BiCMOS ECL STATIC RAM 64K 16Kx 4-BIT PRELIMINARY IDT 100494 FEATURES: DESCRIPTION: • 16,384-w ords x 4 -b it o rg a n iza tio n • A ddress a ccess tim e : 8 /1 0 /1 5n s (max.) • Low p o w e r d issip a tio n : 500m W (typ.) T h e ID T100494 is a 65,536-bit h ig h -sp ee d BiC E M O S ECL
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384-w
T100494
536-bit
400mll)
350mll)
S12-30
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PDF
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Untitled
Abstract: No abstract text available
Text: N E C ELECTRONICS INC blE D • L427S2S D0344[]fl Sib ■ NECE MC-424000A36 4,194,304 X 36-Bit Dynamic CMOS RAM Module NEC Electronics Inc. Description Pin Configuration The M C-424000A36 is a fast-page dynam ic RAM mod ule organized as 4,194,304 words by 36 bits and de
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L427S2S
D0344[
MC-424000A36
36-Bit
C-424000A36
72-Pin
HPD4217400LE
400-mll
HPD424100LA
300-mil
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PDF
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Circuit integrated 8002
Abstract: S1216 static ram 64K pt dsc sec
Text: HIGH-SPEED BiCMOS ECL STATIC RAM 64K 16Kx 4-BIT PRELIMINARY IDT 10494 FEATURES: DESCRIPTION: • 16,384-words x 4-bit organization • Address access time: 8/10 /1 5 ns (max.) • Low power dissipation: 600m W (typ.) • Fully compatible with ECL logic levels
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384-words
T10494
536-bit
ECL-10K
S12-19
IDT104
C28-2
400mll)
S12-20
Circuit integrated 8002
S1216
static ram 64K
pt dsc sec
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY BiCMOS SRAM KM68B4002 524,288 WORD x 8 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 10ns, 12ns, 15ns • Low Power Dissipation Standby TTL : 60mA (CMOS) : 30mA Operating KM68B4002J-10 : 200mA(Max.) KM68B4002J-12 : 195mA(Max.)
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KM68B4002
KM68B4002J-10
200mA
KM68B4002J-12
195mA
KM68B4002J-15
190mA
KM68B4002J
36-SOJ-4QO
KM68B4002
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PDF
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trw 1014
Abstract: No abstract text available
Text: IBM0118160 IBM0118160M IBM0118160B IBM0118160P 1 M x 16 10/10 DRAM Features • Low Power Dissipation - Active max - 1 8 5 mA /1 6 0 mA /1 4 0 mA - Standby: TTL Inputs (max) - 2.0 mA - Standby: C M O S Inputs (max) - 1.0 mA (SP version) - 0.2 mA (LP version)
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IBM0118160
IBM0118160M
IBM0118160B
IBM0118160P
200nA
110ns
trw 1014
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PDF
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Untitled
Abstract: No abstract text available
Text: IBM0117800 IBM0117800M IBM0117800B IBM0117800P 2M x 8 11/10 DRAM Features • 2,097,152 word by 8 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0 .5V power supply • Standard Power SP and Low Power (LP) • 2048 Refresh Cycles - 32 ms Refresh Rate (SP version)
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IBM0117800
IBM0117800M
IBM0117800B
IBM0117800P
300nA
110ns
130ns
256ms
128ms,
43G9629
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PDF
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Untitled
Abstract: No abstract text available
Text: IBM0116400 IBM0116400M IBM0116400B IBM0116400P 4M x 4 12/10 DRAM Features • 4,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles - 64 ms Refresh Rate (SP version)
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IBM0116400
IBM0116400M
IBM0116400B
IBM0116400P
110ns
200nA
300nA
SA14-4203-04
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PDF
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374S203BTN
Abstract: No abstract text available
Text: KMM374S203BTN NEW JEDEC SDRAM MODULE KMM374S203BTN SDRAM DIMM 2Mx72 SDRAM DIMM with ECC based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S203BTN is a 2M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung
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OCR Scan
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KMM374S203BTN
KMM374S203BTN
2Mx72
400mll
168-pin
374S203BTN
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PDF
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fr9z
Abstract: VG264260
Text: VG264260CJ 262.144x16—Bit CMOS Dynamic RAM Preliminary Description The device is CMOS Dynamic RAM organized as 262, 144-word x 16 bits. It is fabricated with an advanced submicron CMOS technology and advanced CMOS circuit design technologies. It is packaged in
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OCR Scan
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VG264260CJ
144x16--
144-word
40-pin
25/28/30/35/40ns
0s035
fr9z
VG264260
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PDF
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IT2205
Abstract: IBM0316809CT3-10 g618ac
Text: IBM0316409CIBM0316809C IBM0316169C 16Mbit S yn ch ro n o u s DRAM Features • High Performance: • Multiple Burst Read with Single Write Option CAS latency = 3 -10 -11 -12 -13 Units • Automatic and Controlled Precharge Command fcK Clock Frequency 100 91
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IBM0316409CIBM0316809C
IBM0316169C
16Mbit
cycles/64ms
IBM0316809C
IBM0316409C
400mil;
IT2205
IBM0316809CT3-10
g618ac
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PDF
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sa3c
Abstract: No abstract text available
Text: HIGH-SPEED BiCMOS ECL STATIC RAM 256K 64K x 4-BIT WITH CONDITIONAL WRITE ADVANCE INFORMATION IDT 10508 IDT 100508 FEATURES: DESCRIPTION: • 65,535-words x 4-bit organization The IDT10508 and IDT100508 are 262,144-bit high-speed B iC E M O S E C L static random acce ss memories organized as
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535-words
12/15ns
800mW
IDT10508
IDT100508
144-bit
ECL-100K,
T100498
400mll)
sa3c
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PDF
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hy57v168010b
Abstract: ddr sdram 128Mbit 8Mx16 54-PIN
Text: SDRAM ORDERING INFORMATION 4Mbit SDRAM Cttöanfeattws 256Kx16 Bank 2 1K Bank 2 2 2 Ref. 4K 4K 4K PWtNO» HY57V16401ÛBTC HY57V168010BTC HY57V161610BTC Bänk 2 2 2 Ref. PW Ho. 4K HY57V16401ÛCTC 4K HY57V168010CTC 4K HY57V161610CTC ii/ k - Pm N o. M ax.im x
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OCR Scan
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256Kx16
HY57V41610TC
400mil
16Mbit
1Mx16
HY57V16401
HY57V168010BTC
HY57V161610BTC
44pin)
hy57v168010b
ddr sdram 128Mbit 8Mx16
54-PIN
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PDF
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Untitled
Abstract: No abstract text available
Text: -H Y U N D A I - • H Y 57V 054O1OA 2 Banks x 8 M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai H Y 57V654010A is a 67,108,864-bit C M O S Synchronous D RA M , ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V654010A is organized a s 2banks of
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57V654010A
864-bit
HY57V654010A
608x4.
HY57V65401
400mil
54pin
2J27I8J7K
150fg
1SE34-
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS 512 K x 8-Bit Dynamic RAM Low Power 512 K x 8-Bit Dynamic RAM HYB 514800BJ-60/-70/-80 HYB 514800BJL-60/-70/-80 Advanced Information • 512 288 words by 8-bit organization • 0 to 70 ‘C operating temperature • Fast access and cycle time RAS access time:
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514800BJ-60/-70/-80
514800BJL-60/-70/-80
514800BJ/BJL-60/-70/-80
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PDF
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