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    400 W TRANSISTOR Search Results

    400 W TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    400 W TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4c6 toroids

    Abstract: Design of H.F. Wideband Power Transformers Philips Application Note ECO6907 4C6 toroid AN98030 2222 632 BLW96 ECO6907 BLW50F blw96 equivalent
    Text: APPLICATION NOTE Two-stage wideband HF linear amplifier for 400 W PEP using BLW96 and BLW50F AN98030 Philips Semiconductors Two-stage wideband HF linear amplifier for 400 W PEP using BLW96 and BLW50F Application note AN98030 CONTENTS 1 PART 1 SINGLE-STAGE WIDEBAND 1.6 − 30 MHz LINEAR AMPLIFIER FOR 400 W PEP USING TWO BLW96


    Original     		PDF BLW96 BLW50F AN98030 BLW96 4c6 toroids Design of H.F. Wideband Power Transformers Philips Application Note ECO6907 4C6 toroid AN98030 2222 632 ECO6907 BLW50F blw96 equivalent

    Untitled

    Abstract: No abstract text available
    Text: STI17771 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)400ã V(BR)CBO (V)400 I(C) Max. (A) Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC) I(CBO) Max. (A)250n» @V(CBO) (V) (Test Condition)400 h(FE) Min. Current gain.100


    Original     		PDF STI17771

    Untitled

    Abstract: No abstract text available
    Text: STI17773 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)400ã V(BR)CBO (V)400 I(C) Max. (A) Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC) I(CBO) Max. (A)250n» @V(CBO) (V) (Test Condition)400 h(FE) Min. Current gain.100


    Original     		PDF STI17773

    Untitled

    Abstract: No abstract text available
    Text: STI17770 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)400ã V(BR)CBO (V)400 I(C) Max. (A) Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC) I(CBO) Max. (A)250n» @V(CBO) (V) (Test Condition)400 h(FE) Min. Current gain.100


    Original     		PDF STI17770

    PT6709

    Abstract: 2L TRANSISTOR NPN planar RF transistor 61dB 2023W
    Text: PT6709 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PT6709 is a planar transistor designed primarily for UHF Class-C, 28 V transmitters. up to 400 MHz. PACKAGE STYLE .380 2L FLG FEATURES: • PG = 4.6 dB min. at 20 W/400 MHz • ηC = 60 % min. at 20W/400 MHz


    Original     		PDF PT6709 PT6709 0W/400 2L TRANSISTOR NPN planar RF transistor 61dB 2023W

    AM81416-020

    Abstract: No abstract text available
    Text: AM81416-020 RF & MICROWAVE TRANSISTORS COMMUNICATIONS APPLICATIONS . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 17.6 W MIN. WITH 6.4 dB GAIN .400 x .400 2LFL S036


    Original     		PDF AM81416-020 AM81416-020

    AM0608-200

    Abstract: S042 30w amplifier
    Text: AM0608-200 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION INTERNAL INPUT MATCHING METAL/CERAMIC HERMETIC PACKAGE POUT = 220 W MIN. WITH 8.7 dB GAIN .400 x .400 2NLFL S042 hermetically sealed ORDER CODE


    Original     		PDF AM0608-200 AM0608-200 S042 30w amplifier

    AM80610-030

    Abstract: S042
    Text: AM80610-030 RF & MICROWAVE TRANSISTORS UHF COMMUNICATIONS APPLICATIONS . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED INPUT/OUTPUT MATCHING METAL/CERAMIC HERMETIC PACKAGE POUT = 30 W MIN. WITH 8.5 dB GAIN .400 x .400 2NLFL S042 hermetically sealed


    Original     		PDF AM80610-030 AM80610-030 S042

    81350M

    Abstract: MSC81350M S042 MSC8
    Text: MSC81350M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . REFRACTORY/GOLD METALLIZATION RUGGEDIZED VSWR 20:1 INTERNAL INPUT/OUTPUT MATCHING LOW THERMAL RESISTANCE METAL/CERAMIC HERMETIC PACKAGE POUT = 350 W MIN. WITH 7.0 dB GAIN .400 x .400 2NLFL S042


    Original     		PDF MSC81350M 81350M MSC81350M 81350M S042 MSC8

    MSC81250M

    Abstract: S042
    Text: MSC81250M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . REFRACTORY\GOLD METALLIZATION RUGGEDIZED VSWR 20:1 INTERNAL INPUT/OUTPUT MATCHING LOW THERMAL RESISTANCE METAL/CERAMIC HERMETIC PACKAGE POUT = 250 W MIN. WITH 6.2 dB GAIN .400 x .400 2NLFL S042


    Original     		PDF MSC81250M 81250M MSC81250M S042

    Untitled

    Abstract: No abstract text available
    Text: « /\°7 — T / W ^ / Power Devices B /\7 — î -i i ' K' H? iS à ìÌ^ - f High speed switching transistors m * Vceo Volts 80 Ic Com. Aflips. 7 200 200 200 200 300 400 5 6 10 15 15 3 400 400 400 400 400 400 400 400 400 400 400 500 5 5 5 7 7 10 V ceo


    OCR Scan     		PDF O-220AB

    IRFP 740

    Abstract: SGSP364 sgsp369 TSD4M250V IRF 810 IRFP150 SGS100MA010D1 TSD4M350V TSD4M351V 220 to 110 power
    Text: L^mg SGS-THOMSON A/f consumer MMiLKgWMtSS TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION 'c v CBO v CEO ptot A (V) (V) <W) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400 330 330 6 6 6 6 7 7


    OCR Scan     		PDF IRF742FI IRF740 IRF740FI SGSP475 SGSP575 IRF350 IRFP350FI TSD4M350V IRF823 IRF823FI IRFP 740 SGSP364 sgsp369 TSD4M250V IRF 810 IRFP150 SGS100MA010D1 TSD4M351V 220 to 110 power

    irfp 950

    Abstract: tsd4m450v SGSP479 transistor BUZ45 SGSP369 BUZ74 STHV82 IRFP 740 IRF 950 SGSP239
    Text: L^mg SGS-THOMSON A/f consumer M M iL K gW M tSS TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION 'c v CBO v CEO ptot A (V) (V) <W) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400 330 330 6 6 6


    OCR Scan     		PDF SGS35MA050D1 TSD4M450V MTP3N60 MTP3N60FI MTH6N60FI MTP6N60 STHV82 STHV102 TSD5MG40V STHI07N50FI irfp 950 SGSP479 transistor BUZ45 SGSP369 BUZ74 IRFP 740 IRF 950 SGSP239

    IRFP 740

    Abstract: IRF 810 IRF 426 irf transistors irfp 730 BUZ 82 Diodes BUZ C 840 irf 840 Diodes BUZ 840 BU 102
    Text: L^mg SGS-THOMSON consumer A / f M M iL K gW M tSS TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION 'c v CBO v CEO ptot A (V) (V) <W) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400 330 330 6 6


    OCR Scan     		PDF MTP3N60 MTH6N60 MTP6N60 IRFP 740 IRF 810 IRF 426 irf transistors irfp 730 BUZ 82 Diodes BUZ C 840 irf 840 Diodes BUZ 840 BU 102

    6DI15S-050

    Abstract: 1DI300ZP-120 m114 1di200 6DI20MS-050 M615
    Text: /\°7 —t / W X / Power Devices • v ,:i~ J t' PowerTransistor Modules Power transistor modules with zener diode for snubber circuit Vcso V ceo tc Votts sus Votts Com Amps 300 400 400 300 300 400 400 1DI300MN-050 1DI400MN-050 1DI400MP-050 1DI300MN-120


    OCR Scan     		PDF 1DI300MN-050 1DI400MN-050 1DI400MP-050 1DI300MN-120 1DI300MP-120 1DI400MN-120 1DI400MP-120 1DI200ZN-120 1DI200ZP-120 1DI300ZN-120 6DI15S-050 1DI300ZP-120 m114 1di200 6DI20MS-050 M615

    Untitled

    Abstract: No abstract text available
    Text: FZ 400 R 12 KL Transistor Thermische Eigenschaften Transistor RthJC Elektrische Eigenschaften Thermal properties DC, pro Baustein / per module 0,052 °C/W pro Baustein / per module 0,03 Electrical properties °C/W Maximum rated values V cES 1200 V 400 A Ic


    OCR Scan     		PDF

    F400

    Abstract: No abstract text available
    Text: FZ 400 R 12 KF 2 Therm ische Eigenschaften Thermal properties Rthjc DC, pro Baustein /p e r module 0,052 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties pro Baustein / per module 0,03 °C/W Maximum rated values VcES 1200 V 400 A


    OCR Scan     		PDF 0002G13 F400

    Untitled

    Abstract: No abstract text available
    Text: SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ISSUE 2 - DECEMBER 1995 FEATURES * 400 Volt VCE0 * 200m A continuous current * Pt0,= 2 W a tt PARTMARKING DETAIL - c FZT558 B ABSOLUTE MAXIMUM RATINGS. VALUE UNIT VcBO -400 V VcEO -400 V PARAMETER


    OCR Scan     		PDF OT223 FZT558 -20mA, -50mA, -10mA, 20MHz -100V -10mA

    T1P122

    Abstract: T1P41C MJE30SST t1p41 T1P31 T1P41A BD211 2SD880Y 2SD88D 2N529B
    Text: POWER PACKAGE TRANSISTORS NPN M a x im u m R a t in g s Type No. 2SC3039 MJE13005 T1PS0 vEB0 PD •CBO • vC8 (V) (V) (V) (W) (V) Min Min Min e Tc=25°C 500 400 700 400 500 400 7 50 9 Max 10 hFE 400 40 e 'c (A) Min 75 5 450 350 5 300 300 3 21 T1P48 400


    OCR Scan     		PDF 2SC3039 MJE13005 T1P49 MJE30SST TIP31A T1P41A TIP120 CIL4006 BD211 BD243 T1P122 T1P41C t1p41 T1P31 2SD880Y 2SD88D 2N529B

    Untitled

    Abstract: No abstract text available
    Text: FZ 400 R 12 KF 2 Therm ische Eigenschaften Thermal properties Rthjc DC, pro Baustein /p e r module 0,052 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties VcES Maximum rated values 1200 V 400 A pro Baustein / per module Ic 0,03 °C/W


    OCR Scan     		PDF 34032T7 0002G13

    Untitled

    Abstract: No abstract text available
    Text: FZ 400 R 06 KF 3 Transistor Transistor Therm ische Eigenschaften Thermal properties 0,074 °C/W DC, pro Baustein / per module R th J C Elektrische Eigenschaften Electrical properties VcES Maximum rated values 600 V 400 A pro Baustein / per module °C/W 150 °C


    OCR Scan     		PDF

    MJDI22

    Abstract: No abstract text available
    Text: DPAK DEVICES continued Bipolar Power Transistors Device NPN PNP MJD340 MJD47 MJD350 MJD31 MJD31C MJD148 MJD6O39 W MJD243 MJD200 MJD41C MJD44H11 MJDI22 W MJD30S5 MJD44E3 (1) VCEO(sus) Volts Min Min/Max Am ps 0.5 300 250 350 400 400 100 40 100 45 80 100 25


    OCR Scan     		PDF MJD340 MJD47 MJD50 MJD13003 MJD350 MJD5731 1k/12k MJD31 MJD31C MJDI22

    SELF vk200

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF P o w er F ield -E ffect Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. 5.0 W, to 400 MHz N-CHANNEL MOS BROADBAND RF POWER


    OCR Scan     		PDF MRF134 68-ohm AN215A SELF vk200

    T1P122

    Abstract: T1P41C BD211 T1P41A BU40S t1p41 T1P121 T1P49 2SC3039 BU806
    Text: POWER PACKAGE TRANSISTORS NPN M a x im u m R a t in g s No. 2SC3039 MJE13005 TIPSO v CB0 (V) Min 500 700 500 VCEO (V) Min 400 400 400 v EB0 (V) Min 7 9 5 Electrical C h ara cte ristics PD (W) 8 Tc=25°C 50 _ | f l Typs 10 e vC8 e "FE (V) Min 400 75 40 ic


    OCR Scan     		PDF 2SC3039 MJE13005 T1P49 MJE340T T1P48 bd243a MJE3055T tip31a t1p41a tip120 T1P122 T1P41C BD211 BU40S t1p41 T1P121 BU806