NTC Thermistor 3d 214
Abstract: NTC 122K 270k ntc Thermistor 682 AT NTC 22K 0805 9707K NTC thermistor 2.2k ohm NTC thermistor 12k ohm 226 20K 752 751k
Text: Surface Mount NTC Thermistors NTHC Series FEATURES CHARACTERISTICS S erie s NTHC04 NTHC06 E IA S ize 0 40 2 0 60 3 0 80 5 R e sista n ce R a ng e + 2 5 o C * 1 00 0 O h m ~ 2 M e gO h m 3 0 O hm ~ 1 50 KO hm 4 0 O hm ~ 2 M eg O h m R e sista n ce To le ran ce (+ 2 5 o C )*
|
Original
|
NTHC04
NTC Thermistor 3d 214
NTC 122K
270k ntc
Thermistor 682 AT
NTC 22K 0805
9707K
NTC thermistor 2.2k ohm
NTC thermistor 12k ohm
226 20K 752
751k
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Surface Mount NTC Thermistors NTHC Series FEATURES CHARACTERISTICS S erie s NTHC04 NTHC06 E IA S ize 0 40 2 0 60 3 0 80 5 R e sista n ce R a ng e + 2 5 o C * 1 00 0 O h m ~ 2 M e gO h m 3 0 O hm ~ 1 50 KO hm 4 0 O hm ~ 2 M eg O h m R e sista n ce To le ran ce (+ 2 5 o C )*
|
Original
|
NTHC04
NTHC04
NTHC06
|
PDF
|
GSH10305040040
Abstract: No abstract text available
Text: Tel. +41 24 445 66 88 Fax +41 24 445 66 89 capinfo@Lcap.ch www.Lcap.ch LeclanchÄ Capacitors 48, av. de Grandson 1400 Yverdon, Switzerland Drawing No. : 100011044 created from : hm 21/03/2013 14:05:00 Part Number : GSH10305040040 D -0 +1 €D : 40 mm L : 40 mm
|
Original
|
GSH10305040040
GSH10305040040
|
PDF
|
AG47004010020
Abstract: No abstract text available
Text: Tel. +41 24 445 66 88 Fax +41 24 445 66 89 capinfo@Lcap.ch www.Lcap.ch LeclanchÄ Capacitors 48, av. de Grandson 1400 Yverdon, Switzerland Drawing No. : 11207 created from : hm 10/06/2013 14:13:00 Part Number : AG47004010020 l Å5 Äd 10 mm L : 20 mm l : 40 mm
|
Original
|
AG47004010020
AG47004010020
|
PDF
|
256Mbyte DDR SDRAM with 64bit data bus
Abstract: PC133 133Mhz cl3 ELPIDA ECT-TS-0198 hitachi part numbering DDR266B DDR200 DDR266A hitachi part "numbering" RDRAM
Text: Hitachi & NEC DRAM Part Numbering System Elpida Memory, Inc. 2000, 2001 ECT-TS-0198 December 13, 2001 1. Hitachi DRAM Component Parts Numbering System e.g. 256Mbit SDRAM HM 52 25 40 5 B L TT 1) (2) (3) (4) (5) (6)(7) (8) (1)Hitachi IC Memory A6 (9) (2)Product Family
|
Original
|
ECT-TS-0198
256Mbit
64Mbit,
128Mbit,
256Mbit,
512Mbit
64MByte
96MByte
128MByte
192MByte
256Mbyte DDR SDRAM with 64bit data bus
PC133 133Mhz cl3
ELPIDA
hitachi part numbering
DDR266B
DDR200
DDR266A
hitachi part "numbering"
RDRAM
|
PDF
|
Radial Leaded
Abstract: 504K
Text: API_newlayouts_single:APIcatalog_newlayouts 10/29/10 9:40 AM Page 149 er w Po NG TI RA z T MH EN N. RR MI CU DC) (A M NT MU NA z) XI SO H MA RE . (M LF MIN SE CY N UE EQ CE FR AN ) ST S SI HM RE M (O DC MU XI MA CE AN z) CT kH DU 0 IN 1.0 @ H (µ SH NU
|
Original
|
5393R
-504K
-204K
-603K
-154K
-393K
-923K
-503K
-243K
Radial Leaded
504K
|
PDF
|
MS214
Abstract: MS21422 2020R
Text: API_newlayouts_single:APIcatalog_newlayouts 8/24/10 3:40 PM Page 56 R F NG TI RA A T m EN UM RR IM CE CU AX AN ) M ST S SI HM RE (O M DC U M ) XI Hz (M MA M MU NI ) MI F Hz SR (M Y NC M UE EQ MU NI FR MI ST Q E TE NC RA LE TO H) (µ CE AN CT # DU IN SH
|
Original
|
MS21422
MS214
2020-00K
MS21422-01)
MS214
2020R-00J
2020R
MS21422
2020R
|
PDF
|
0841A
Abstract: LT10K marking code 82J
Text: API_newlayouts_single:APIcatalog_newlayouts 8/24/10 11:33 AM Page 40 R F NG TI RA A T m EN UM RR IM CE CU AX AN ) M ST S SI HM RE (O M DC U M ) XI Hz (M MA M MU NI ) MI F Hz SR (M Y NC M UE EQ MU NI FR MI ST Q E TE NC RA LE TO H) (µ CE AN CT # DU IN L I TA R Y
|
Original
|
MS14046
LT10K)
MS18130
MS90538
0841A
LT10K
marking code 82J
|
PDF
|
RB100A
Abstract: RB110
Text: Schottky barrier diodes Schottky barrier diodes summary Peak reverse voltage V HM V Reverse voltage RB160L-40 RB110C Part num ber Peak forward surge current 1 cycle @ 60 Hz V r (V) Mean rectifying current lo (A) 40 40 1.0 40 25 1.0 Forward voltage Package
|
OCR Scan
|
RB160L-40
RB110C
RB401D
RB435C
RB400D
RB411D
RB420D
RB421D
RB425D
RB450F
RB100A
RB110
|
PDF
|
220-10 diode
Abstract: DIODE B2
Text: Rectifier diode bridges Type V rrm V hm s I fsm If a v m t « 10 ms ^v| max Last, Load Charge: R /C A A °c t»j= V V ^vj max Outline 100 190 300 600 900 40 80 125 250 380 50 0,9/0,8 125 Si : 102 D : 103 SD: 104 Si Si Si Si Si 100 190 300 600 900 40 80 125
|
OCR Scan
|
hlb/2200
220-10 diode
DIODE B2
|
PDF
|
HM3-65261
Abstract: 65261 HM16S HM1-6S261 5540a
Text: lllNlll /l/IATRA-HARRIS SEMICONDUCTOR HM 65261 16K x 1 CMOS STATIC RAM EBJH JULY 1985 Pinout Features • • • • • • • • • • • HIGH SPEED, FAST ACCESS TIME : 60/70/85/100 ns ASYNCHRONOUS STAND BY CURRENT : 50 jiA max OPERATING SUPPLY CURRENT : 40 mA max
|
OCR Scan
|
|
PDF
|
L-934MWC
Abstract: L-934PWC
Text: www.i-t.su info@i-t.su Ten: 495 739-09-95, 644-41-29 Eenbie CBeTOflMOflbi □ 3 MM flnawieTp : 3 mm npon3BC>AHTenb : Kingbright Curia CBeTa yKa3aHa npH 20 mA. Kofl: L-934MWC L-934PWC X [hm] - Curia CBeTa [mKa] 50-180 200-600 yron o63opa n 40 35 T u n nHH3bl
|
OCR Scan
|
L-934MWC
L-934PWC
o63opa
L-934PWC
|
PDF
|
HM3-65261
Abstract: No abstract text available
Text: MHS HIM AW RA-HARRIS HM 65261 SEMICONDUCTOR 16K x 1 CMOS STATIC RAM ILIMDI Pinout Features • • • • • • • • • • • HIGH SPEED, FAST ACCESS TIME : 60/70/85/100 ns ASYNCHRONOUS STAND BY CURRENT : SO j<A max OPERATING SUPPLY CURRENT : 40 mA max
|
OCR Scan
|
|
PDF
|
HM65664A
Abstract: SOJ28
Text: Temic Semiconductors Part Number Format Temperature Range °G H M 65664A -9 8Kx8 -40 to +85 4.5 to 5.5 35 to 55 5/100 2 to 30 75 to 100 HM 65664A -A 8Kx8 -40 t o +125 4.5 to 5.5 35 to 55 50/500 20 to 200 75 to 100 H M 65664A -2 CL65664 8Kx8 8Kx8 -55 to +125
|
OCR Scan
|
5664A
CL65664
IL65664
L65664
PDIL28(
PDIL28Î
S028I
SOJ28
HM65664A
|
PDF
|
|
|
L-53MBDL
Abstract: MKFL L-53MBC L-53PBC L-53MBTL
Text: www.i-t.su info@i-t.su Ten: 095 785-48-05, 739-09-95 l"ony6b ie CBeTOflMOflbi 0 5 mm flwaMeTp : 5 mm np0M3B0flMTenb : Kingbright Cwna CBeTa yKa3aHa npw 20 m A. Ko a : k [hm ] L-53MBC L-53MBDL L-53MBTL L-53PBC 455 455 455 465 Cwna CBeTa [m Ka ] 50-150 40-60
|
OCR Scan
|
o63opa
L-53MBC
L-53MBDL
L-53MBTL
L-53PBC
MKFL
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LARGE ALUMINUM ELECTROLYTIC CAPACITORS HC Sn ap-in Term inal T yp e, S m a ller-size d S e rie s Smaller case sizes than HM series Voltage range of 6.3~450V & & Miniaturized Solvent Proof W VS200V Item Operating temperature range WV i 350 : -40 ~ +85°C. WV
|
OCR Scan
|
VS200V
120Hz,
1000//F
|
PDF
|
2SJ239
Abstract: 2SK2030 2SJ201Y 2sk1 2SK2057 2SK2200TP 2sk1544 2SJ201-Y 2SK1079 2SJ238
Text: MOSFET Characteristic Chart M axim u m R ating Id |Am ps| V oss [Volts] R d s ON Pd [W atts] TYP. [Ohm s| M AX. lO hm sI V qs [Volts] Id [Amps] Vtn (Volts] | ID - 1 mA] A p plicatio n DC/DC converter 2SJ147 T0-220(IS) -12 -60 40 0.17 0.2 -10 -6 -1.5 ~ -3.5
|
OCR Scan
|
2SJ147
2SJ201-Y
2SJ238
TE12L)
2SJ239
2SJ240
2SJ241
2SJ312
2SK1078
2SK2030
2SJ201Y
2sk1
2SK2057
2SK2200TP
2sk1544
2SK1079
|
PDF
|
Dense-Pac Microsystems dpz1MM
Abstract: DPZ1M
Text: DENSE-PAC 8 Megabit FLASH EEPROM VI I C K O S Y ST HM $ D PZ1M M 8N G D E SC R IP T IO N : The DPZ1MM8NG is a 1 Meg x 8 CMOS FLASH Electrically Erasable and Programmable nonvolatile memory devices. The DPZ1MM8NC is a 40 Pin ceramic Leadless Chip Carrier LCC , hermetically
|
OCR Scan
|
150ns
100ns
120ns
30A136-00
Dense-Pac Microsystems dpz1MM
DPZ1M
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Attenuators 7mm Precision Types DC -1 8 GHz Precision Performance Frequency: DC -18.0 GHz A tten u atio n V alues: i- 4 0 d B a s noted A tten u atio n A ccuracy: i - 6 d B ± 0 .3 d B 7 - 20 dB 21 - 40 dB 41 - 60 dB ± 0 .5 d B + 0.7 dB + 1.5 dB Im pedance: 50 O hm s
|
OCR Scan
|
ATT-0431-X
TT-0395-X
TT-0396-XX-7M
|
PDF
|
d191
Abstract: X2D11
Text: 40 E RO HM CO LTD . VTRÆJ IC /IC s for VTR Applications 7 ô 5 ô cl cn » S SRHÏ1 BU2770S — BU27703 ÜQQM6 ? ^ — "7 = 7 7 -2 j VTR Digital Servo • BU2770S (Í, VTFKD-tf-tf v X f A S 1 í 'f J F í ^ ü í S l / ’D im ension s (U n it : m m ) T'ÍSfiST'
|
OCR Scan
|
BU2770S
BU27703
42pin
d191
X2D11
|
PDF
|
XF160
Abstract: No abstract text available
Text: 2 . Sch em atic: 1. M echanical D im ensions: I o o CN E lectrical Sp ecification s: 1.40 TOP VIEW OCL: 10 u H ± 20 % @ 100KHz 0.1V BOTTOM VIEW DCR: 0 .3 0 O hm s Max Isat: 1.78 1Adc B ased on 10% Typ d ro p in OCL Irm s: 0 .9 0 A (B ased on 40"C Typ Tem p Rise)
|
OCR Scan
|
100KHz
60MHz
MIL-STD-202,
UL94V-0
E151556
XF1606T-103M
XF160
|
PDF
|
501LT
Abstract: SG400W22 SG500FXF21 SG400EX22 SG400R22 SG400U22 3-60E3A
Text: - 77 - * S G 4 0 0 R, U, W, 3 + 3 V-, b£ <W < - •§" I rrm I drm ¡CRM ■ e * a $ ¿ti »j SG400R22 SG400U22 SG400W22 1300 | 1600 I tqrm 400 W d = V ¿ Vdrm, h RMS 150 i T /= 7 0 °C ) I tsm SG 40 0 EX2 2 I gfm P cravi /CR(RMS) P g HM Vg r m it V dm
|
OCR Scan
|
SG400
SG400R22
SG400U22
SG400W22
SG400EX22
125-C,
SG400U22
SG400W22
H-101
501LT
SG500FXF21
SG400EX22
3-60E3A
|
PDF
|
222M
Abstract: No abstract text available
Text: 2. Sch em atic: 1. M echanical D im ensions: c 0.100 0 .0 4 3 Max 1.10 2 .5 0 3. E lectrical Specification : in oo C\l CD d<° OCL: 2 .2 0 u H ± 2 0 % 1 0 0 K H z 0.1V DCR: 0 .1 4 0 O hm s Max SRF: 115 MHz Typ Irm s: 2 .4 0 A based on 40% Tem p Rise
|
OCR Scan
|
100KHz
60Adc
MIL-STD-202,
UL94V-0
E151556
XF1704-222M
222M
|
PDF
|
00565
Abstract: No abstract text available
Text: PART NUMBER: 123DFC3R5Z IP R A D IA L L E A D S U P E R C A P A C IT O R S Parts are RoHS compliant ELECTRICAL SPECIFICATIONS C ap acitan c e: 0.012 F T o le ra n c e : -20 % . +80 % T e m p e ra tu re range: -40°C to +70°C W VD C : 3.5 V o lts DC E SR AC :600 m illiO hm s at 120 Hz and 20°C
|
OCR Scan
|
123DFC3R5Z
04E-05
00565
|
PDF
|
