Untitled
Abstract: No abstract text available
Text: SPECIFICATIONS PARAMETERS RATED VOLTAGE OPERATING VOLTAGE RANGE RATED CURRENT MAX INGRESS PROTECTION TYPICAL SPL @ 10 cm FREQUENCY RANGE SWEEP RATE VALUES UNITS 12 9 ~ 28 15 IP65 106 2,700 ~ 3,100 Vdc Vdc mA - 4 RED (+) & BLUE (-)/ CONTINUOUS TONE/PULSING TONE
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2002/95/EC
AW-10PR-NSVC
AW-10PR-NSVC
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Rt0100
Abstract: Siren Sound Generator 5 sound Siren Sound Generator Siren Sound Generator 7 sound alarm sound generator SOUND GENERATOR Siren cmos sound generator Siren Sound Generator 4 sound 128-KHz
Text: CT-HOLLON COMPANY SINGLE TONE SIREN/ALARM SOUND GENERATOR eV0100 http://www.ct-hollon.com Tel:0755-8290 8963 Fax:0755-8294 1332 The eV0100 is a CMOS design for single tone alarm sound application. FEATURES: 1. 2. 3. 4. 5. 6. 7. Auto Power down function. Low Operating Voltage:2V-5V.
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eV0100
eV0100
RT0100.
Rt0100
Siren Sound Generator 5 sound
Siren Sound Generator
Siren Sound Generator 7 sound
alarm sound generator
SOUND GENERATOR
Siren
cmos sound generator
Siren Sound Generator 4 sound
128-KHz
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piezo siren
Abstract: KPE-1700
Text: Tolerance:±1.0mm at 30 cm S.P.L dB 110 T4 (VDC) Operating Voltage (VDC) 6 -1 4 Rated Voltage (VDC) 12 Operating Frequency (KHz) 2.0—3.5 Current Consumption at 12VDC (mA,maximun) Sound Pressure Level at 12VDC/30cm (dB.minimun) 130 105 Tone Siren Operating Temperature (*C)
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OCR Scan
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12VDC
12VDC/30cm
KPE--1700
UL--94
KS--E--R--026--1
piezo siren
KPE-1700
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ALLIED 8546576
Abstract: 854-6502 C959 854-6565 854-6574 854-6525 transistor 5724 scr 4059 SC250E SC416 TRANSISTOR
Text: Mallory Sonalert and Minilert Audible Warning Devices Visit MalloryÕs Website at www.nacc-mallory.com PC Board Mounted Sonalert Signal Compact Sonalert II Audible Signal c 4-28 VDC c Continuous Tone 64-78 dB Sound Level c 3-16 mA Typical Operating Current
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c4-28
c3-16
SBM428.
SC250E
SC250F
LSC616N
SC628D
SC628H;
ALLIED 8546576
854-6502
C959
854-6565
854-6574
854-6525
transistor 5724
scr 4059
SC416 TRANSISTOR
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KPE-650S
Abstract: KPE-650SA KPE-650SAN KPE-657S KPE-653SA KPE-651S KPE-651SA KPE-620SAN KPE-657SA KPE-648S
Text: Model No. with tin-plated uipfXKj screw Minimum Operating Current Sound Pressure Voltage Range Consumption Level at 'AGCC Non-pel* (mA) 30 cm All ctfters DCon!)' Case Style Rated Frequency ♦500(Hz) Tone KPE-650S 2800 Continuous 84 98 4 28 2 22 A 1 40 KPE-651S
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OCR Scan
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C18V/)
KPE-650S
KPE-651S
KPE-653S
KPE-655S
KPE-657S
KPE-650SA
KPE-651SA
KPE-660S
KPE-680S
KPE-650SAN
KPE-653SA
KPE-620SAN
KPE-657SA
KPE-648S
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RT0104
Abstract: No abstract text available
Text: Rato RT0104 The RT0104 is a CMOS Design for single tone alarm sound application Features Pin Diagram Low Operating Voltage 3V ~ 5V CMOS process On-Chip RC oscillator Low stand by current OSC2 OSC1 T1 GND 1 2 3 4 8 7 6 NC VCC BZ2 BZ1 5 RT0104 Pin Description
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RT0104
RT0104
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SN76477N
Abstract: SN76477 SN76477NF voltage controlled steam train sound chip SN76477N application SN76477N train voltage controlled steam train sound Steam Sound Generator circuit diagram SN76477N SOUND GENERATOR sn76*n sound generator
Text: 1 c irc u its #”» u v r~m « w «• fe# i a u A lb ^ COMPLEX SOUND 00 4 0 9 6 . D li- S 1 2 6 * 2 . J f J L > / 1 9 7 8 'S 2 V ? • N O R N F D U A L - IN - L IN E P A C K A G E T O P V IE W Generates Noise, Tone, or Low-Frequency-Based Sounds,
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SGA-0163
Abstract: No abstract text available
Text: Preliminary Preliminary SGA-0163 Product Description DC-4500 MHz, Silicon Germanium Cascadeable Gain Block Sirenza Microdevices SGA-0163 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 2.1V. This RFIC uses the latest Silicon
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SGA-0163
DC-4500
SGA-0163
50-ohm
EDS-101494
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SGA-3563
Abstract: No abstract text available
Text: Preliminary Preliminary SGA-3563 Product Description DC-5000 MHz, Silicon Germanium Cascadeable Gain Block Sirenza Microdevices SGA-3563 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.2V. This RFIC uses the latest Silicon
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SGA-3563
DC-5000
SGA-3563
50-ohm
EDS-101496
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SGA-0363
Abstract: transistor CD 910
Text: Preliminary Preliminary SGA-0363 Product Description DC-5000 MHz, Silicon Germanium Cascadeable Gain Block Sirenza Microdevices SGA-0363 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 2.5V. This RFIC uses the latest Silicon
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SGA-0363
DC-5000
SGA-0363
50-ohm
EDS-101495
transistor CD 910
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Xa3 TRANSISTOR
Abstract: matsuo
Text: Preliminary Product Description SXA-389 Sirenza Microdevices’ SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable
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SXA-389
SXA-389
016REF
118REF
041REF
EDS-102231
Xa3 TRANSISTOR
matsuo
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Untitled
Abstract: No abstract text available
Text: Preliminary Product Description SXA-389 Sirenza Microdevices’ SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable
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SXA-389
SXA-389
016REF
118REF
041REF
EDS-102231
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Xa3 TRANSISTOR
Abstract: MCH18 SXA-389 SXA-389B SXA-389Z 267M3502104 sxa389z marking SXA389Z XA3Z
Text: SXA-389 SXA-389Z Product Description Sirenza Microdevices’ SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology
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SXA-389
SXA-389Z
SXA-389
AN-075
SXA-389B
EDS-102231
Xa3 TRANSISTOR
MCH18
SXA-389B
SXA-389Z
267M3502104
sxa389z marking
SXA389Z
XA3Z
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NGA-286
Abstract: Sirenza Microdevices, Inc
Text: Preliminary NGA-286 Product Description Sirenza Microdevices NGA-286 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance up
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NGA-286
NGA-286
AN-059
1950Mhz
EDS-101102
Sirenza Microdevices, Inc
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xa3b
Abstract: No abstract text available
Text: SXA-389B SXA-389BZ Product Description Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surfacemountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent
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SXA-389B
SXA-389BZ
MPO-100136
016REF
118REF
041REF
015TYP
SXA-389B
EDS-102915
xa3b
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MCH18
Abstract: SXA-389B xa3b EL115
Text: Preliminary Product Description SXA-389B Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular
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SXA-389B
SXA-389B
MPO-100136
016REF
118REF
041REF
015TYP
EDS-102915
MCH18
xa3b
EL115
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SGA-7489
Abstract: 7489 a74 sot-89 DC-3000 MCH185A101JK mrc18 ECB-100607
Text: Preliminary SGA-7489 Product Description Sirenza Microdevices SGA-7489 is a high performance cascadeable 50-ohm amplifier designed for operation at 5 Volts DC. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters
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SGA-7489
SGA-7489
50-ohm
DC-3000
7489
a74 sot-89
MCH185A101JK
mrc18
ECB-100607
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a3bz
Abstract: marking A3BZ 267M3502104 a3bz MARKING AN-075 MCH18 SXA-389B SXA-389BZ Sirenza amplifier SOT-89 MMIC SXA 389Bz marking
Text: SXA-389B SXA-389BZ Product Description Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surfacemountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent
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SXA-389B
SXA-389BZ
SXA-389B
AN-075
EDS-102915
a3bz
marking A3BZ
267M3502104
a3bz MARKING
AN-075
MCH18
SXA-389BZ
Sirenza amplifier SOT-89
MMIC SXA 389Bz marking
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Untitled
Abstract: No abstract text available
Text: Preliminary NGA-686 Product Description Sirenza Microdevices NGA-686 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance
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NGA-686
NGA-686
DC-6000
AN-059
EDS-101106
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NGA-186
Abstract: Sirenza Microdevices, Inc mmic n1 SIRENZA MARKING
Text: Preliminary Preliminary NGA-186 Product Description Sirenza Microdevices NGA-186 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance up
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NGA-186
NGA-186
DC-6000
EDS-101101
Sirenza Microdevices, Inc
mmic n1
SIRENZA MARKING
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Siren Sound Generator 7 sound
Abstract: cmos sound generator 8 pin sound chip ic alarm sound generator Siren Sound Generator 5 sound utc sound generator siren 6 tone Siren Sound Generator 4 sound Siren alarm sound
Text: UNISONIC TECHNOLOGIES CO., LTD 1617 CMOS IC 6 TONES SIREN/ALARM SOUND GENERATOR DESCRIPTION The UTC 1617 is a CMOS design for 6 different alarm sounds application. The sound of UTC 1617 will be generated in cycling sequence. By the way, UTC 1617 is also partitioned to 6 types for single
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1617B:
1617C:
1617D:
1617E:
1617F:
QW-R502-016
Siren Sound Generator 7 sound
cmos sound generator
8 pin sound chip ic
alarm sound generator
Siren Sound Generator 5 sound
utc sound generator
siren 6 tone
Siren Sound Generator 4 sound
Siren
alarm sound
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1617 CMOS IC 6 TONES SIREN/ALARM SOUND GENERATOR DESCRIPTION The UTC 1617 is a CMOS design for 6 different alarm sounds application. The sound of UTC 1617 will be generated in cycling sequence. By the way, UTC 1617 is also partitioned to 6 types for single
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1617B:
1617C:
1617D:
1617E:
1617Fat
QW-R502-016
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Untitled
Abstract: No abstract text available
Text: Preliminary NGA-386 Product Description Sirenza Microdevices NGA-386 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance
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NGA-386
NGA-386
DC-5000
AN-059
1950Mhz
EDS-101103
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1485C
Abstract: SE 194 Sirenza amplifier SOT-89
Text: Product Description Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable
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SXA-389B
SXA-389B
MPO-100136
016REF
118REF
041REF
015TYP
EDS-102915
1485C
SE 194
Sirenza amplifier SOT-89
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