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    4 CHANNEL CLASS AB 300 WATT Search Results

    4 CHANNEL CLASS AB 300 WATT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    4 CHANNEL CLASS AB 300 WATT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: GHz20060 60 Watts PEP, 26 Volts, Class AB 1800 - 2000 MHz Updated Feb 2001 GENERAL DESCRIPTION CASE OUTLINE The GHz20060 is a COMMON EMITTER transistor capable of providing 60 Watts of Class AB, RF PEP output power over the band 1800-2000 MHz. This transistor is


    Original     		PDF GHz20060 GHz20060

    MIL-STD-462C

    Abstract: connectors m24308 AB1275 DBMME25PF ab35s 4-40 UNC-2B SPECIFICATION AB100 MIL-S-901C
    Text: www.martekpower.com Series AB DC/DC Converters NOTE: THE AB SERIES IS NOT RECOMMENDED FOR NEW DESIGNS DUE TO PARTS OBSOLESCENCE. WE RECOMMEND THE RB SERIES AS A 100% COMPATIBLE DIRECT REPLACEMENT. 200 watt 50 watt 20 watt 35 watt 100 watt A comprehensive line of full military DC-DC converters ideally suited for


    Original     		PDF -55oC MIL-STD-810C MIL-S-901C MIL-STD-462C connectors m24308 AB1275 DBMME25PF ab35s 4-40 UNC-2B SPECIFICATION AB100 MIL-S-901C

    TRANSISTOR MOTOROLA MAC 223

    Abstract: MRF9282 MRF1510 triac MAC 97 AB MSB81T1 solid state 220 volt stabilizer circuit MHW8272 MRF9242 10 amp igbt 1000 volt 100 amp 1200 volt Triac
    Text: NEW PRODUCT CALENDAR and KEY FOCUS PRODUCTS 3Q96 CALCPSTG/D REV 8 This quarterly folder includes information on products by the Communications, Power and Signal Technologies Group CPSTG , which comprises four organizations. These organizations are the RF Semiconductor Division, specializing in low power and high power discrete transistors, hybrid circuits for power amplifiers (modules),


    Original     		PDF

    16 pin 4x4 amplifier gsm

    Abstract: amplifier QFN16 MCH185A3R3CK
    Text: ECP100 PRELIMINARY DATA SHEET 1.0 WATT POWER AMPLIFIER Product Features Applications Basestations and Repeaters CDMA/GSM/TDMA/EDGE PCS/CDMA2000/IMT2000/UMTS Multi-carrier systems 100 - 2300MHz 31 dBm P1dB High Linearity: 47 dBm OIP3 High Efficiency: PAE > 45%


    Original     		PDF ECP100 2300MHz 96GHz PCS/CDMA2000/IMT2000/UMTS QFN-16 ECP100 ECP100G ECP100G-500 ECP100G-1000 ECP100D 16 pin 4x4 amplifier gsm amplifier QFN16 MCH185A3R3CK

    Untitled

    Abstract: No abstract text available
    Text: ECP200 PRELIMINARY DATA SHEET 2.0 WATT POWER AMPLIFIER Product Features Applications 100 - 2300MHz 33 dBm P1dB High Linearity: 49 dBm OIP3 11 dB Linear Gain at 1.96GHz Single 5V Supply High Reliabilty Class A or AB operation Basestations and Repeaters CDMA/GSM/TDMA/EDGE


    Original     		PDF ECP200 2300MHz 96GHz PCS/CDMA2000/IMT2000/UMTS QFN-16 ECP200 ECP200G ECP200G-500 ECP200G-1000 ECP200D

    ALC5622

    Abstract: ALC5622-GRT ALC5622-GR JATR-1076-21 MAX11111 ALC56
    Text: ALC5622-GR ALC5622-GRT I2S AUDIO CODEC + 1.3W CLASS AB/D MONO SPEAKER AMPLIFIER DATASHEET Rev. 1.0 08 April 2008 Track ID: JATR-1076-21 Realtek Semiconductor Corp. No. 2, Innovation Road II, Hsinchu Science Park, Hsinchu 300, Taiwan Tel.: +886-3-578-0211. Fax: +886-3-577-6047


    Original     		PDF ALC5622-GR ALC5622-GRT JATR-1076-21 ALC5622 includin8000 QFN-32 ALC5622 ALC5622-GRT ALC5622-GR JATR-1076-21 MAX11111 ALC56

    ALC5621

    Abstract: ALC5621-GRT ALC56 REG26 JATR-1076-21 bluetooth headphone
    Text: ALC5621 I2S AUDIO CODEC + 1.3W CLASS AB/D MONO SPEAKER AMPLIFIER DATASHEET Rev. 1.0 27 December 2007 Track ID: JATR-1076-21 Realtek Semiconductor Corp. No. 2, Innovation Road II, Hsinchu Science Park, Hsinchu 300, Taiwan Tel.: +886-3-578-0211. Fax: +886-3-577-6047


    Original     		PDF ALC5621 JATR-1076-21 ALC5621-GR QFN-32 ALC5621-GRT ALC5621 ALC5621-GRT ALC56 REG26 JATR-1076-21 bluetooth headphone

    ALC5622

    Abstract: ALC5622-GR ALC5622-GRT ALC56 5v 3W AUDIO AMPLIFIER CIRCUIT DIAGRAM audio mixer JATR-1076-21 36ah
    Text: ALC5622-GR ALC5622-GRT I2S AUDIO CODEC + 1.3W CLASS AB/D MONO SPEAKER AMPLIFIER DATASHEET Rev. 1.1 13 November 2008 Track ID: JATR-1076-21 Realtek Semiconductor Corp. No. 2, Innovation Road II, Hsinchu Science Park, Hsinchu 300, Taiwan Tel.: +886-3-578-0211. Fax: +886-3-577-6047


    Original     		PDF ALC5622-GR ALC5622-GRT JATR-1076-21 ALC5622 QFN-32 ALC5622 ALC5622-GR ALC5622-GRT ALC56 5v 3W AUDIO AMPLIFIER CIRCUIT DIAGRAM audio mixer JATR-1076-21 36ah

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003AN Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35003AN MRFG35003ANT1

    CPE 2-129

    Abstract: N 341 AB PANASONIC MA 645 911 ZO 607 MA A113 A114 A115 AN1955 C101 JESD22
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003AN Rev. 1, 12/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35003AN MRFG35003ANT1 CPE 2-129 N 341 AB PANASONIC MA 645 911 ZO 607 MA A113 A114 A115 AN1955 C101 JESD22

    ATC 1084

    Abstract: A113 A114 A115 AN1955 C101 JESD22 MRFG35003ANT1 transistor c 413 ATC 1084 -33
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003AN Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35003AN MRFG35003ANT1 ATC 1084 A113 A114 A115 AN1955 C101 JESD22 MRFG35003ANT1 transistor c 413 ATC 1084 -33

    MRFG35003ANT1

    Abstract: ATC 1084 ic atc 1084 PANASONIC MA 645 911 A113 A114 A115 AN1955 C101 JESD22
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003AN Rev. 0, 4/2007 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35003AN MRFG35003ANT1 MRFG35003ANT1 ATC 1084 ic atc 1084 PANASONIC MA 645 911 A113 A114 A115 AN1955 C101 JESD22

    MHW707-2

    Abstract: MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861
    Text: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar


    Original     		PDF 714U/1 MHLW8000 MHW707-2 MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861

    Untitled

    Abstract: No abstract text available
    Text: www.martekpower.com Series AM AC-DC / DC-DC Converters 50 watt triple output 50 watt single output 100 watt The AM series AC-DC/DC-DC power supplies can accept a wide range of input powers making them true multiple input power supplies. The AM models are uniquely qualified for a variety of military applications


    Original     		PDF MIL-STD-810C MIL-S-901C 50Vdc

    IS95A

    Abstract: IS-95A AP501 AP501-PCB JESD22-A114
    Text: AP501 The Communications Edge TM PCS-band 4W HBT Amplifier Module Product Features Product Information Product Description • 1930 – 1990 MHz Functional Diagram The AP501 is a high dynamic range power amplifier in a RoHS-compliant flange-mount package. The multi-stage


    Original     		PDF AP501 AP501 IS-95A JESD22-A114 JESD22-C101 1-800-WJ1-4401 IS95A AP501-PCB JESD22-A114

    6 FMR 40

    Abstract: No abstract text available
    Text: AM011037WM-BM-R AM011037WM-FM-R February 2010 Rev 2 DESCRIPTION AMCOM’s AM011037WM-BM-R and AM011037WM-FM-R are part of the GaAs pHEMT MMIC power amplifier series. These high efficiency MMICs are 2-stage GaAs pHEMT power amplifiers biased at +8V. The input and


    Original     		PDF AM011037WM-BM-R AM011037WM-FM-R AM011037WM-BM-R AM011037WM-FM-R 38dBm) AM011037WM-BM/FM-R 6 FMR 40

    AM011037WM-BM/FM-R

    Abstract: amcomusa mmics
    Text: AM011037WM-BM-R AM011037WM-FM-R July 2010 Rev 3 GaAs MMIC Power Amplifier DESCRIPTION AMCOM’s AM011037WM-BM/FM-R is part of the GaAs pHEMT MMIC power amplifier series. This high efficiency MMIC is a 2-stage GaAs pHEMT power amplifier biased at +8V. The input and inter-stage matching networks cover


    Original     		PDF AM011037WM-BM-R AM011037WM-FM-R AM011037WM-BM/FM-R 38dBm) AM011037WM-BM/FM-R 10mils 1000pF, 50ohms, 10ohms, amcomusa mmics

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 11, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF19030LR3 MRF19030LSR3 Designed for class AB PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and


    Original     		PDF MRF19030LR3 MRF19030LSR3

    MRF19030

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF19030R3 MRF19030SR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and


    Original     		PDF MRF19030R3 MRF19030SR3 MRF19030

    MRF19030

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF19030 MRF19030S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF19030 MRF19030S

    j721

    Abstract: j435 MRF19030
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF19030 MRF19030R3 MRF19030S MRF19030SR3 The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications with f r equenc ies f ro m 1 .8 to 2 .0 GH z . Su i ta b l e for FM, TD MA , C D MA and


    Original     		PDF Gain990 MRF19030 MRF19030R3 MRF19030S MRF19030SR3 j721 j435

    40watt amplifier

    Abstract: SA1106 40-watt IS-136
    Text: W a t k i n s - J o h n s o n : T h e C e l l E x t e n d e r s Power Amplifiers SA1106 TDMA 40-Watt 1.93 GHz to 1.99 GHz Linear Power Amplifier Module • ■ ■ ■ 40 Watts TDMA IS-136 +48 dBm P1dB 45 dB Gain -30°C to +85°C W OUTLINE DRAWING 4 PIN, 4.48


    Original     		PDF SA1106 40-Watt IS-136 40watt amplifier SA1106 40-watt IS-136

    W050

    Abstract: No abstract text available
    Text: PACIFIC PM2105 MONOLITHICS DATASHEET 1 Watt RFIC Power Amplifier - 800 to 2000 MHz Operation . Features • • • • >1 Watt Output Power @ 5 V 55% Efficiency Multiple Biasing Modes 3 to 6 Volt Operation o nn cm ¡S m □ r PM2105 mu □r Applications •


    OCR Scan     		PDF PM2105 PM2105 W050

    W050

    Abstract: No abstract text available
    Text: PM2105 PACIFIC MONOUTHICS DATASHEET 1 Watt RFIC Power Amplifier - 800 to 2000 MHz Operation . Features • • • • >1 W att Output Power @ 5 V 55% Efficiency Multiple Biasing Modes 3 to 6 Volt Operation □r o r PS m mu □ r PM2105 m or Applications •


    OCR Scan     		PDF PM2105 PM2105 2105FNL W050