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Catalog Datasheet	MFG & Type	Document Tags	PDF
7N60 Abstract: No abstract text available Text: 3VD395600YL 3VD395600YL 高压MOSFET芯片描述 Ø 3VD395600YL为采用硅外延工艺制造的N沟道增强型600V高压MOS功率场效应晶体管； Ø 先进的高压分压终止环结构； Ø 较高的雪崩能量； Ø 漏源二极管恢复时间快；	Original	3VD395600YL 3VD395600YL 3VD395600YLN 600VMOS O-220, 4040m 3880m O-220 7N60	PDF
7N60 Abstract: No abstract text available Text: 3VD395600YL 3VD395600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD395600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; Ø Advanced termination scheme to provide enhanced 3 1	Original	3VD395600YL 3VD395600YL O-220 7N60	PDF
Untitled Abstract: No abstract text available Text: 3VD395600YL 3VD395600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD395600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; ¾ Advanced termination scheme to provide enhanced voltage-blocking capability;	Original	3VD395600YL 3VD395600YL O-220	PDF
7N60 Abstract: No abstract text available Text: 3VD395600YL 3VD395600YL 高压MOSFET芯片描述 ¾ 3VD395600YL为采用硅外延工艺制造的N沟道增强型600V高压MOS功率场效应晶体管； ¾ 先进的高压分压终止环结构； ¾ 较高的雪崩能量； ¾ 漏源二极管恢复时间快；	Original	3VD395600YL 3VD395600YL 3VD395600YLN 600VMOS O-220, O-220 600VVGS 10VID 30VVDS 7N60	PDF