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    Untitled

    Abstract: No abstract text available
    Text: 3VD298500YL 3VD298500YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD298500YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Advanced termination scheme to provide enhanced voltageblocking capability.


    Original     		PDF 3VD298500YL 3VD298500YL O-220 3200m 2880m

    Untitled

    Abstract: No abstract text available
    Text: 3VD298500YL 3VD298500YL 高压MOSFET芯片 描述 Ø 3VD298500YL为采用硅外延工艺制造的N沟道增强型 500V高压MOS功率场效应晶体管； Ø 先进的高压分压终止环结构； Ø 较高的雪崩能量； Ø 漏源二极管恢复时间快；


    Original     		PDF 3VD298500YL 3VD298500YL 3VD298500YLN 500VMOS O-220 3200m 2880m