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    Untitled

    Abstract: No abstract text available
    Text: 3VD250600YL 3VD250600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD250600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. 11 ¾ Advanced termination scheme to provide enhanced 3


    Original     		PDF 3VD250600YL 3VD250600YL O-251

    2n60 MOSFEt

    Abstract: 2N60 2008.07.28 2n60 equivalent mosfet Vds 30 Vgs 25
    Text: 3VD250600YL 3VD250600YL 高压MOSFET芯片 描述 ¾ 3VD250600YL为采用硅外延工艺制造的N沟道 增强型600V高压MOS功率场效应晶体管； ¾ 先进的高压分压终止环结构； 11 ¾ 较高的雪崩能量； 3 ¾ 漏源二极管恢复时间快；


    Original     		PDF 3VD250600YL 3VD250600YL 3VD250600YLN 600VMOS O-251 600VVGS 10VID 30VVDS 2n60 MOSFEt 2N60 2008.07.28 2n60 equivalent mosfet Vds 30 Vgs 25