Untitled
Abstract: No abstract text available
Text: Frequently Asked Questions Rev F Conflict Minerals 1. Does Ecliptek have a Conflict Minerals Policy Statement? Ecliptek Corporation’s Conflict Minerals Policy Statement can be found on our website. 2. What minerals are considered conflict minerals? Conflict minerals, regardless of their origin, include columbite-tantalite tantalum , cassiterite (tin), wolframite
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TEN10-300-001
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VHE708
Abstract: MCE101 VHE706 VHE707
Text: MICROSEMI CORP/ HICRO 5bE ]> • bllS'iO? Ü0Q1371 3TG 'T-O'drl0! MICRtii OUALITY / S E M IC O N D U C T O R , IN C 25 Amp Epitaxial High Efficiency Rectifiers IMÜL do -4 300V, 400V, 500V, 600V High Surge Capability Ultra-Fast Switching Speeds Low Thermal Resistance
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0G1371
VHE70S
VHE706
VHE707
VHE708
MCE101
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SE236
Abstract: No abstract text available
Text: MICRO N S E M I C O N D U C T O R INC b7E ]> • b l l l S M T ODD'îSGD 3TG H M R N ADVANCE U IIC R Q M MT5LC512K8D4 REVOLUTIONARY PINOUT 512K x 8 SRAM SRAM 512Kx 8 SRAM 3.3V OPERATION WITH OUTPUT ENABLE, REVOLUTIONARY PINOUT • All I / O pins are 5V tolerant
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MT5LC512K8D4
512Kx
36-Pin
1154c
SE236
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2SJ120
Abstract: 2SK416 2SJ120S 2SK416L C3S30
Text: 2S K 416 L ,2S K 416 s y U =1> N 9 V * JUMOS FET_ SILICON N-CHANNEL MOS FET *»*• «* y f >9 ñ 2SJ120 L ,2SJ120 § t =1> HIGH SPEED POW ER SWITCHING Complementary pair with 2SJ120 , 2SJ120S * > £ V T=P (DType 1. 2. Y — h ! G ate Y V -{ y \ D rain
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2SK416L,
2SJ120CL
2SJ120
2SJ120Â
2SJ120S
2SK416Â
Ta-25Â
2SK416
2SJ120S
2SK416L
C3S30
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Untitled
Abstract: No abstract text available
Text: MICRO QUALITY / S E M IC O N D U C T O R . INC. 2 Amp Epitaxial High Efficiency Rectifiers 300 To 600 Volt VRRM Low Leakage High Surge Capability Ultra Fast Switching Speeds Glass Passivated LTR. IN C H E S M IL L IM E T E R S A B C D E -030-.034 Dia. 1 0 -1 0 7 Dia.
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transistor k 4212 fet
Abstract: gd 361 transistor
Text: PRELIMINARY DATA SHEET_ \|F f / HETERO JUNCTION FIELD EFFECT TRANSISTOR / NE23383B L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE23383B is a Herero Junction FET that utilizes the Unit : mm
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NE23383B
NE23383B
transistor k 4212 fet
gd 361 transistor
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Untitled
Abstract: No abstract text available
Text: ö 2 3 S d GS SIEMEN! O O aC H ll SIEMENS 1 S IE ö AKTIENGESELLSCHAF M7E T V 3 9 -/5 SIMOPAC® MOSFET Modules v03 = 800 v l0 = 36 A 0.24 Q BSM 181 (C BSM 181 R ^ D S (o n ) = • • • • • • Power module Single switch N channel Enhancement mode
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C67076-A1001-A2
C67076-A1016-A2
123SbQS.
fi235bOS
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21000sw
Abstract: 2044B 2SB1215
Text: Ordering num ber:EN2539B 2SB1215/2SD1815 No.2539B PNP/NPN Epitaxial Planar Silicon Transistors SAXYO i High-Current Switching Applications A p p lic a tio n s • Relay drivers, applications. high-speed inverters, converters, and other general high-current
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2539B
2SB1215/2SD1815
2SB1215/2SD1815-applied
2SB1215
21000sw
2044B
2SB1215
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Untitled
Abstract: No abstract text available
Text: 1S2 THRU SEMICONDUCTOR TECHNICAL DATA FORWARD INTERNATIONAL ELECTRONICS LTD, 1S 10 T E C H N IC A L S P E C IF IC A T IO N S O F S C H O T T K Y B A R R IE R R E C T IF IE R VOLTAGE RANGE - 20 to 100 Volts C U R R EN T- 1.0 Ampere FEATURES * Low power loss, high efficiency
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Untitled
Abstract: No abstract text available
Text: AN6886 AN6886 5-Dot LED Driver Circuit • Description T he A N 6886 is a m onolithic in teg rated c ircu it driv in g 5L E D and is capable o f logarithm ic dB b a r graph display for input signal. It incorporates 2 rectification amp. w hich is capable o f gain
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AN6886
137Q7
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westcode n 600 ch 14
Abstract: No abstract text available
Text: WESTCODE SEMICONDUCTORS Capsule Phase Control Thyristor C o n s is ts o f a d iffu s e d s ilic o n e le m e n t m o u n te d in an h e rm e tic c e ra m ic c o ld w e ld e d c a p s u le , a n d fe a tu re s an a m p lify in g g a te . A v a ila b le in in d u s try s ta n d a rd h o u s in g a n d th in h o u s in g s .
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300mm
000270c!
westcode n 600 ch 14
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Untitled
Abstract: No abstract text available
Text: Panasonic Other MOS LSIs MN65703T Low Power 8-Bit, 3-Channel CMOS D/A Converter for Image Processing • Overview Pin Assignment The MN65703T is a high-speed 8-bit, 3-channel CMOS digital-to-analog converter. Two channels use serial in put. It uses both a matrix cell and weighted current technol
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MN65703T
MN65703T
18MHz
100kHz
TQFP048-P-0707
bT32flS2
001SflL
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Untitled
Abstract: No abstract text available
Text: ~T~- 1 4 C C t-0 JonU E H R 9/89 1 N 2225-K Martin Avenue, Santa Clara, CA 95050 (408 492-1400 FAX (408)492-1500 C O M P O N E N T S 5 to 500 MHz TO-8 Cascadable Amplifier High Output Level . High Efflcency . High Third Order I.P. .
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2225-K
AC572
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PCR 046 j
Abstract: 9721 elat
Text: 14 MC68HC705BD3 The MC68HC705BD3 is functionally equivalent to MC68HC05BD3, but with increased R A M size to 256 bytes and the user ROM is replaced by an 7.75K-bytes user EP R O M located from $2000 to $3EFF . The entire MC68HC05BD3 data sheet applies to the MC68HC705BD3, with
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MC68HC705BD3
MC68HC705BD3
MC68HC05BD3,
75K-bytes
MC68HC05BD3
MC68HC705BD3,
MC68HC705BD3.
PCR 046 j
9721
elat
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semikron skkt 90
Abstract: semikron skkt 41 SKKT41/12E skkt 103 T25-17 SKKT 330 16E SKKT 56/12 E semikron skkt skkt41/04 semikron skkt 55
Text: S E M I K R O N INC 3tE » « 1 3 b b 71 Q D G 22 70 7 • SEKG ■ t */rsm V rrm d v / V drm dt cr 75 A V /(is 48 A Itrm s (m aximum values for continuous operation) | 95 A | 75 A | 95A Itav (sin. 180; Tease = 74 °C) V V 60 A S EM IK R D N -z s n 48 A 60 A
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i3bb71
DG2270
SKKH41/06D
5001SKKT
/12Ej
fll3bb71
QQ0S27S
T-25-17
semikron skkt 90
semikron skkt 41
SKKT41/12E
skkt 103
T25-17
SKKT 330 16E
SKKT 56/12 E
semikron skkt
skkt41/04
semikron skkt 55
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F1S45N06
Abstract: MOSFET S1A M n10 ece
Text: ÎS 3 H A R U Ü S i “ ' " R " RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM I S " T" 45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs D ece m b e r 1995 Features Packages JEDEC STYLE TO-247 • 45A , 60V SOURCE • rDS ON = 0 -02 8 U • Temperature Compensating PSPICE Model
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RFG45N06,
RFP45N06,
RF1S45N06,
RF1S45N06SM
O-247
2E-13
86E-3
26E-3
90E-6
07E-9
F1S45N06
MOSFET S1A
M n10 ece
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Cdb450c24
Abstract: 5PNR-2876Z Cdb450 CFWM450G BA4116FV g015b K4-18 SSOP-B16 CFWM450 BM116FV
Text: Communication ICs FM IF detector for cordless telephones I BA4116FV The BM 116FV is an IC with an internal mixing circuit, IF circuit, wave detection circuit, RSSI circuit, and noise detec tion circuit. Because it can operate at low voltages, it is ideal for use in cordless telephones.
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BA4116FV
BM116FV
10MHz
150MHz
G015bbb
SSOP-B16
Cdb450c24
5PNR-2876Z
Cdb450
CFWM450G
BA4116FV
g015b
K4-18
SSOP-B16
CFWM450
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Untitled
Abstract: No abstract text available
Text: KM62256C Ll/C LI - L CMOS SRAM 32,768 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range i -40 to 85°C • Fast Access Time : 70,100ns Max. • Low Power Dissipation Standby (CMOS) : 275,«W(Max.) Operating : 110mW(Max.)
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KM62256C
100ns
110mW
KM62256CLGI/CLGI-L
28-SOP-450
KM62256CLTGI/CLTGI-L
28-TSOP1-CI813
KM62256CLRGI/CLRGI-L
28-TSOP1-Q813
KM62256CLI/CLI-L
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Philips NME
Abstract: 74LVT2952 74LVT2952D 74LVT2952DB 74LVT2952PW LVT2952
Text: NAPC/PHILIPS SEMICOND b3E » • bbSBTSM 0084173 flOT « S I C 3 Philip* Semiconductors Low Voltage Product* Objective »pacification 3.3V ABT Octal registered transceiver 3-State FEATURES • • • • • 8-bit registered transceiver Independent registers for A and B buses
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74LVT2952
64mA/-32mA
500mA
Philips NME
74LVT2952
74LVT2952D
74LVT2952DB
74LVT2952PW
LVT2952
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Untitled
Abstract: No abstract text available
Text: EUPEC T178N 52E D • 3HD3BT7 000D713 S S 1! ■ U P E C 7 - 2 6 - /9 TVpenrelhe/Type range T 178 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VDrm>VRRM Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Effektiver Durchlaßstrom
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T178N
000D713
5x315
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in5347b
Abstract: in5352b IN5378B in5388b IN5365B in5349b in5359b IN5383B IN5362B in5346b
Text: FAGOBt _ S7E » • 345^355 ÜQD0770 TT1 « F G R S 1N5345B.1N5388B FAGOR ELECTRONICS 5 WZener Diodes Dimensions in mm. ■ N DO-201AE Plastic N H n~-U-lS q H Voltage 8.7 to 200 V Power 5.0 W Standard Voltage Tolerance is ± 5% Mounting instructions
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qd077Ã
1N5345B.
1N5388B
DO-201AE
C2-17
DO-201AD
DO-27A
DO-201AE
in5347b
in5352b
IN5378B
in5388b
IN5365B
in5349b
in5359b
IN5383B
IN5362B
in5346b
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HN27C1024HG-85
Abstract: HN27C1024H HN27C1024HG-10
Text: HN27C1024H Series 1M 64K x 16-bit UV and OTP EPROM • DESCRIPTION The Hitachi HN27C1024H is a 1-Megabit Ultraviolet Erasable and One-Time Programmable Electrically Programmable Read Only Memory organized as 65,536 x 16-bits. The HN27C1024H features fast address access times of 85,
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HN27C1024H
16-bit)
16-bits.
32-bit
40-pin
HN27C1024HG-85
HN27C1024HG-10
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PCF84C81A
Abstract: MAB8048 PCF84C21 PCF84C21A PCF84C21AP PCF84C41A PCF84C81 pcf84c81ap PCF85XX PCF84C81AP/144/F2
Text: Philips Sem iconductors Preliminary specification PCF84C21 A, PCF84C41A, PCF84C81A Telecom Microcontroller FEATURES GENERAL DESCRIPTION • 8-bit CPU, ROM, RAM, I/O in a single 28-lead package This data sheet details the specific properties of the PCF84C21A, PCF84C41A and PCF84C81 A. The shared
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28-lead
PCF84C21
PCF84C41A)
PCF84C81A)
MAB8048)
PCF84C21A,
PCF84C41A,
PCF84C81A
711062b
PCF84C81A
MAB8048
PCF84C21A
PCF84C21AP
PCF84C41A
PCF84C81
pcf84c81ap
PCF85XX
PCF84C81AP/144/F2
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Untitled
Abstract: No abstract text available
Text: S P SPT7 7 1 0 T 8-BIT, 150 MSPS FLASH A/D CONVERTER SIGNAL PROCESSING TECHNOLOGIES FEATURES APPLICATIONS • • • • • • • • • • Metastable Errors Reduced to 1 LSB Low Input Capacitance: 10 pF Wide Input Bandwidth: 210 MHz 150 MSPS Conversion Rate
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SPT7710
SPT7710
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