Untitled
Abstract: No abstract text available
Text: 3SK285 High Frequency FETs 3SK304 Tentative , 3SK308(Tentative) Silicon N-Channel MOS 3SK304 For UHF amplification 1.5 –0.3 0.65±0.15 1 3 2 +0.1 0.4 –0.05 1.9±0.2 4 0.95 2.9±0.2 Though low voltage operation, performance is equivalent to the con- 0.95
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3SK285
3SK304
3SK308
3SK304
800MHz
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Untitled
Abstract: No abstract text available
Text: High Frequency FETs 3SK304 Tentative , 3SK308 (Tentative) Silicon N-Channel MOS FET For UHF amplification 3SK304 • Features ● Achieving the equivalent performance to the conventional products under enhancement mode operation. ● Mini-type/S-mini type package, allowing downsizing of the sets
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3SK304
3SK308
800MHz
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3SK304
Abstract: No abstract text available
Text: High Frequency FETs 3SK304 Tentative , 3SK308 (Tentative) Silicon N-Channel MOS FET For UHF amplification 3SK304 • Features ● Achieving the equivalent performance to the conventional products under enhancement mode operation. ● Mini-type/S-mini type package, allowing downsizing of the sets
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3SK304
3SK308
3SK304
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MN1873287
Abstract: an6512n 2sk3190 MN171202 mn158413 mn15142 mn187164 mn6740 AN7210 MN15283
Text: Maintenance and Discontinued Types <Maintenance Types> Maintenance and Discontinued Types This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Discontinued Types>
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MN101C01C
MN15224
MN101C01D
MN15226
MN101C027
MN15261
MN101C03A
MN101C38A
MN15263
MN101C06D
MN1873287
an6512n
2sk3190
MN171202
mn158413
mn15142
mn187164
mn6740
AN7210
MN15283
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3sk304
Abstract: 3SK308 k308
Text: Panasonic H igh F req u en cy FETs 3SK304 Tentative , 3SK308(Tentative) Silicon N-Channel MOS 3SK304 For UHF amplification Unit : mm • Features • Though low voltage operation, performance is equivalent to the con ventional product. Be -EE 3 • Downsizing of sets by mini or S-mini type package, and automatic
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3SK304
3SK308
3SK304
100hA
VDS-10V
800MHz
k308
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3SK304
Abstract: 3SK308
Text: Panasonic H ig h F r e q u e n c y FE T s 3SK304 Tentative , 3SK308(Tentative) Silicon N -Channel MOS 3SK304 For UHF amplification U n it : m m • Features • Though low voltage operation, performance is equivalent to the con ventional product. EE -e h
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3SK304
3SK308
3SK304
800MHz
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Untitled
Abstract: No abstract text available
Text: Panasonic High Frequency FETs 3SK304 Tentative , 3SK308 (Tentative) Silicon N-Channel MOS FET For UHF a m p lific a tio n 3SK304 • Features 0 Achieving the equivalent performance to the conventional prod ucts under enhancement mode operation. • Mini-type/S-mini type package, allowing downsizing of the sets
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OCR Scan
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3SK304
3SK308
100nA
800MHz
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