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    3SK165 Search Results

    3SK165 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    3SK165 Sony GaAs N-channel Dual Gate MES FET Original PDF
    3SK165 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    3SK165 Unknown FET Data Book Scan PDF
    3SK165A Sony GaAs N-channel Dual Gate MES FET Original PDF
    3SK165A Sony GaAs N-channel Dual Gate MES FET Original PDF
    3SK165A Sony GaAs N-channel Dual Gate MES FET Original PDF
    3SK165A Sony GaAs N-channel Dual Gate MES FET Original PDF
    3SK165A-0 Sony GaAs N-channel Dual Gate MES FET Original PDF
    3SK165A-0 Sony GaAs N-channel Dual Gate MES FET Original PDF
    3SK165A-1 Sony GaAs N-channel Dual Gate MES FET Original PDF
    3SK165A-1 Sony GaAs N-channel Dual Gate MES FET Original PDF

    3SK165 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 3SK165-2 Transistors N-Channel Dual-Gate UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V)6 I(D) Max. (A)80m P(D) Max. (W)150m Maximum Operating Temp (øC)150õ I(DSS) Min. (A)30m I(DSS) Max. (A)55m @V(DS) (V) (Test Condition)5 @Temp (øC) (Test Condition)25


    Original     		PDF 3SK165-2

    3SK165A

    Abstract: 3SK165A-0 3SK165A-1
    Text: 3SK165A GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office. Description The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications


    Original     		PDF 3SK165A 3SK165A 800MHz M-254 3SK165A-0 3SK165A-1

    3SK165A

    Abstract: 3SK165A-0 3SK165A-1 nf 820
    Text: 3SK165A GaAs N-channel Dual Gate MES FET Description The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including cellular, cordless phone. Features • Low voltage operation


    Original     		PDF 3SK165A 3SK165A 800MHz M-254 3SK165A-0 3SK165A-1 nf 820

    Untitled

    Abstract: No abstract text available
    Text: 3SK165-0 Transistors N-Channel Dual-Gate UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V)6 I(D) Max. (A)80m P(D) Max. (W)150m Maximum Operating Temp (øC)150õ I(DSS) Min. (A)20m I(DSS) Max. (A)55m @V(DS) (V) (Test Condition)5 @Temp (øC) (Test Condition)25


    Original     		PDF 3SK165-0

    3SK165A

    Abstract: 3SK165A-1 3SK165A-0
    Text: 3SK165A GaAs N-channel Dual Gate MES FET Preliminary Description The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including cellular, cordless phone. Features • Low voltage operation


    Original     		PDF 3SK165A 3SK165A 800MHz M-254 3SK165A-1 3SK165A-0

    ILX511B

    Abstract: CXA1691 ILX511 optical pickup unit philips cdr 870 sony car stereo CXA2549M ILX511 applications deck sound filter CIRCUIT picture CXA1733M CXD3300R
    Text: CCD Under development CCD AREA IMAGE SENSOR COLOR VIDEO CAMERA CCD IMAGE SENSOR Product name Optical format inch TV system Effective pixels (H x V) Sensitivity Typ. (mV) Package Pins Recommended timing pulse generator ICX038BNA ICX038DNA ICX039BNA ICX039DNA


    Original     		PDF ICX038BNA ICX038DNA ICX039BNA ICX039DNA ICX038BNB ICX038DNB ICX039BNB ICX039DNB ICX054AK ICX055AK ILX511B CXA1691 ILX511 optical pickup unit philips cdr 870 sony car stereo CXA2549M ILX511 applications deck sound filter CIRCUIT picture CXA1733M CXD3300R

    "Toggle Switch" mts-1

    Abstract: MATSUA compressor R12 Transistor mcr 22-8 412 nec c277 icl7621 equivalent km 1667 M37700 Siemens LCD Display C75 Marconi ODU NEC C923
    Text: TCS320IS54B Chip Set User’s Guide PRELIMINARY IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest


    Original     		PDF TCS320IS54B "Toggle Switch" mts-1 MATSUA compressor R12 Transistor mcr 22-8 412 nec c277 icl7621 equivalent km 1667 M37700 Siemens LCD Display C75 Marconi ODU NEC C923

    cx20185

    Abstract: UHF FM Transceiver motorola 5118 motorola 5118 uhf CXA1446S Sony Semiconductor ILX511 CXA1691 CXA1733M CXA1619S SONY ICX
    Text: Sony Semiconductor 96.10 Sony Semiconductor Product List ’96 – 10 TABLE OF CONTENTS MEMORY CMOS/Bi-CMOS SRAM . 1 • LINEUP . 1


    Original     		PDF LCX009AK/AKB LCX011AM LCX012BL LCX016AL LCX016AM LCX019AM PHD003 PHD010 PHD011 PHD016 cx20185 UHF FM Transceiver motorola 5118 motorola 5118 uhf CXA1446S Sony Semiconductor ILX511 CXA1691 CXA1733M CXA1619S SONY ICX

    lg 7607

    Abstract: NF 948 3SK1651 ik 7817 3SK165 dual-gate 1448S NF 935 NF 936
    Text: 3SK165 SONY. GaAs N-Channel Dual-Gate MES FET Description Package O utline u n it: mm The 3S K 165 is a GaAs N-channel Dual-Gate MES FET for low noise UHF amplifiers and mixers. Low noise and high gain characteristics are accomplished by optimum mask pattern design. Easier high frequency


    OCR Scan     		PDF 3SK165 3SK165 2000MHz lg 7607 NF 948 3SK1651 ik 7817 dual-gate 1448S NF 935 NF 936

    Untitled

    Abstract: No abstract text available
    Text: 3SK165 SONY GaAs N-Channel Dual-Gate MES FET Description The 3SK165 is a GaAs N -Channel D ual-G ate MES FET for low noise UHF amplifiers and mixers. Low noise and high gain characteristics are accomplished by opti­ mum mask pattern design. Easier high frequency circuit


    OCR Scan     		PDF 3SK165 3SK165 800MHz 2000MHz 0G20b32 M-254 2Qb33

    ov 2094

    Abstract: No abstract text available
    Text: SONY 3SK165A GaAs N-channel Dual Gate MES FET Preliminary Description The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-nolse amplification. This FET is suitable for a wide range of applications including cellular, cordless phone. Features


    OCR Scan     		PDF 3SK165A 800MHz 3SK165A M-254 ov 2094

    3SK164

    Abstract: 3SK184 3SK174 3SK183 3SK192 3SK159 3SK179 3SK182 199D 3SK171
    Text: - 180 - Jl f m s 4t € ffl & m A $ K a æ 3SK160 m, P d/Pch ]/ 3SK159 fë £ V) * * £ * (V) & m V / U H F RF MOS N DE 1 3.5 DS ±8 30m D V / U H F RF MOS N DE 13. 5 DS ±8 30nt D ÜHF TV Tuner MOS N DE 12 DS ±8 Ig s s (max) (A) (min) (A) Vg s (V) % ft


    OCR Scan     		PDF 3SK159 3SK160 3SK162 3SK164 3SK165 16dBtyp, 45dBtyp 800MHz 3SK184 19dBtyp 3SK164 3SK184 3SK174 3SK183 3SK192 3SK179 3SK182 199D 3SK171

    2sk125

    Abstract: SLD300 photo magneto electric 1T32 SLD203 ic dm 311 SGM2006M "CD pickup" 1T339
    Text: 2. 1 Index by Usage Variable Capacitance Diodes Type 1T32 1T32A 1T33 1T33A Package 2P Mini mold 1T33C 1T362 1T363 2P Super Mini mold 1T364 1T359 2P Mini mold 1T360 Remark Application Voltage V) Page Smaller package UH F/V H F tuning 31 AC: 3% (1T32A: 2%)


    OCR Scan     		PDF 1T32A 1T33A 1T33C 1T362 1T363 1T364 1T359 1T360 1T32A: 1T33A: 2sk125 SLD300 photo magneto electric 1T32 SLD203 ic dm 311 SGM2006M "CD pickup" 1T339

    2SK566

    Abstract: 2SK676 2SK989 2SK677 2SK587 3SK165 2SK67-6 2SK9 2SK677-2 2SK676-1
    Text: SONY CORP/COMPONENT PRODS 0 3 0 2 3 0 3 0 0 0 2 1 3 4 =1 IfiE D 2SK676 AIGaAs/GaAs Low Noise Microwave HEMT Description Package Outline Unit: mm The 2 SK 6 7 6 is an AIGaAs/GaAs HEMT fabricated by MOCVD Metal Organic Chemical Vapor Deposition . This 0.5 micron gate FET


    OCR Scan     		PDF 2SK676 power12 GD02137 T-31-25 12GHz 2SK566 2SK989 2SK677 2SK587 3SK165 2SK67-6 2SK9 2SK677-2 2SK676-1